JPS544066A - Growing method of silicon crystal under low pressure - Google Patents
Growing method of silicon crystal under low pressureInfo
- Publication number
- JPS544066A JPS544066A JP6891877A JP6891877A JPS544066A JP S544066 A JPS544066 A JP S544066A JP 6891877 A JP6891877 A JP 6891877A JP 6891877 A JP6891877 A JP 6891877A JP S544066 A JPS544066 A JP S544066A
- Authority
- JP
- Japan
- Prior art keywords
- low pressure
- under low
- silicon crystal
- growing method
- crystal under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To grow a lot of silicon thin film on the substrate under a low pressure, by placing the major plane of the substrate orthogonally and in parallel with gas flow, and by surrounding the circumference with silicon of which cross section is approximately a square or with a quartz tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6891877A JPS544066A (en) | 1977-06-13 | 1977-06-13 | Growing method of silicon crystal under low pressure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6891877A JPS544066A (en) | 1977-06-13 | 1977-06-13 | Growing method of silicon crystal under low pressure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS544066A true JPS544066A (en) | 1979-01-12 |
Family
ID=13387504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6891877A Pending JPS544066A (en) | 1977-06-13 | 1977-06-13 | Growing method of silicon crystal under low pressure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS544066A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58133932U (en) * | 1982-03-04 | 1983-09-09 | 富士通株式会社 | Compound semiconductor vapor phase growth equipment |
JPS60106766A (en) * | 1983-11-10 | 1985-06-12 | Tsukiyama Tekkosho:Kk | Wire end clamping and drawing-out device in winding machine |
JPS6232073U (en) * | 1985-08-08 | 1987-02-25 | ||
JPH05206034A (en) * | 1991-08-09 | 1993-08-13 | Applied Materials Inc | Method for low-temperature and high- pressure vapor deposition of wafer |
JPH05259146A (en) * | 1992-03-09 | 1993-10-08 | Hitachi Ltd | Semiconductor manufacturing apparatus |
US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
-
1977
- 1977-06-13 JP JP6891877A patent/JPS544066A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58133932U (en) * | 1982-03-04 | 1983-09-09 | 富士通株式会社 | Compound semiconductor vapor phase growth equipment |
JPH0510351Y2 (en) * | 1982-03-04 | 1993-03-15 | ||
JPS60106766A (en) * | 1983-11-10 | 1985-06-12 | Tsukiyama Tekkosho:Kk | Wire end clamping and drawing-out device in winding machine |
JPH022780B2 (en) * | 1983-11-10 | 1990-01-19 | Tsukyama Tetsukosho Kk | |
JPS6232073U (en) * | 1985-08-08 | 1987-02-25 | ||
JPH0240049Y2 (en) * | 1985-08-08 | 1990-10-25 | ||
JPH05206034A (en) * | 1991-08-09 | 1993-08-13 | Applied Materials Inc | Method for low-temperature and high- pressure vapor deposition of wafer |
US5607724A (en) * | 1991-08-09 | 1997-03-04 | Applied Materials, Inc. | Low temperature high pressure silicon deposition method |
US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
US5874129A (en) * | 1991-08-09 | 1999-02-23 | Applied Materials, Inc. | Low temperature, high pressure silicon deposition method |
JPH05259146A (en) * | 1992-03-09 | 1993-10-08 | Hitachi Ltd | Semiconductor manufacturing apparatus |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
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