JPS5680125A - Formation of monocrystalline semiconductor film - Google Patents

Formation of monocrystalline semiconductor film

Info

Publication number
JPS5680125A
JPS5680125A JP15678879A JP15678879A JPS5680125A JP S5680125 A JPS5680125 A JP S5680125A JP 15678879 A JP15678879 A JP 15678879A JP 15678879 A JP15678879 A JP 15678879A JP S5680125 A JPS5680125 A JP S5680125A
Authority
JP
Japan
Prior art keywords
film
substrate
monocrystalline
crystal plane
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15678879A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15678879A priority Critical patent/JPS5680125A/en
Publication of JPS5680125A publication Critical patent/JPS5680125A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a monocrystal matched with a crystal plane orientation by forming a polycrystalline or amorphous semiconductor film on a monocrystalline semiconductor substrate formed a dielectric film to expose a part of the substrate surface wherein the semiconductor film is scanned by energy beams with linear cross section. CONSTITUTION:An SiO2 film 11 is selectively formed on a monocrystalline Si substrate 10 surface presenting a (111) crystal plane to expose a part of the substrate surface. A polycrystalline or amorphous Si film 12 is formed on the film 11 by a CVD method or the like so that the film 12 may contact with the exposed section of the substrate. Next, while heating the Si film 12 by irradiating the film 12 by light beams 13 having a linear cross section, and the film 12 is monocrystallized by scanning the beams in an arrow A direction and by heat treatment. In this way, the substrate surface and the crystal plane orientation are kept the same and monocrystallization is performed without variations. Furthermore, the number of crystal defects included in the monocrystalline film will be minimized.
JP15678879A 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor film Pending JPS5680125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15678879A JPS5680125A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15678879A JPS5680125A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor film

Publications (1)

Publication Number Publication Date
JPS5680125A true JPS5680125A (en) 1981-07-01

Family

ID=15635314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15678879A Pending JPS5680125A (en) 1979-12-05 1979-12-05 Formation of monocrystalline semiconductor film

Country Status (1)

Country Link
JP (1) JPS5680125A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127319A (en) * 1982-01-25 1983-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for single-crystal film on insulating layer
JPS59140367A (en) * 1983-12-27 1984-08-11 Agency Of Ind Science & Technol Method and device for producing thin film
JPS59171114A (en) * 1983-03-18 1984-09-27 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127319A (en) * 1982-01-25 1983-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for single-crystal film on insulating layer
JPS59171114A (en) * 1983-03-18 1984-09-27 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal film
JPS59140367A (en) * 1983-12-27 1984-08-11 Agency Of Ind Science & Technol Method and device for producing thin film

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