JPS5680125A - Formation of monocrystalline semiconductor film - Google Patents
Formation of monocrystalline semiconductor filmInfo
- Publication number
- JPS5680125A JPS5680125A JP15678879A JP15678879A JPS5680125A JP S5680125 A JPS5680125 A JP S5680125A JP 15678879 A JP15678879 A JP 15678879A JP 15678879 A JP15678879 A JP 15678879A JP S5680125 A JPS5680125 A JP S5680125A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- monocrystalline
- crystal plane
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain a monocrystal matched with a crystal plane orientation by forming a polycrystalline or amorphous semiconductor film on a monocrystalline semiconductor substrate formed a dielectric film to expose a part of the substrate surface wherein the semiconductor film is scanned by energy beams with linear cross section. CONSTITUTION:An SiO2 film 11 is selectively formed on a monocrystalline Si substrate 10 surface presenting a (111) crystal plane to expose a part of the substrate surface. A polycrystalline or amorphous Si film 12 is formed on the film 11 by a CVD method or the like so that the film 12 may contact with the exposed section of the substrate. Next, while heating the Si film 12 by irradiating the film 12 by light beams 13 having a linear cross section, and the film 12 is monocrystallized by scanning the beams in an arrow A direction and by heat treatment. In this way, the substrate surface and the crystal plane orientation are kept the same and monocrystallization is performed without variations. Furthermore, the number of crystal defects included in the monocrystalline film will be minimized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15678879A JPS5680125A (en) | 1979-12-05 | 1979-12-05 | Formation of monocrystalline semiconductor film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15678879A JPS5680125A (en) | 1979-12-05 | 1979-12-05 | Formation of monocrystalline semiconductor film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5680125A true JPS5680125A (en) | 1981-07-01 |
Family
ID=15635314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15678879A Pending JPS5680125A (en) | 1979-12-05 | 1979-12-05 | Formation of monocrystalline semiconductor film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5680125A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127319A (en) * | 1982-01-25 | 1983-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for single-crystal film on insulating layer |
JPS59140367A (en) * | 1983-12-27 | 1984-08-11 | Agency Of Ind Science & Technol | Method and device for producing thin film |
JPS59171114A (en) * | 1983-03-18 | 1984-09-27 | Agency Of Ind Science & Technol | Manufacture of semiconductor single crystal film |
-
1979
- 1979-12-05 JP JP15678879A patent/JPS5680125A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127319A (en) * | 1982-01-25 | 1983-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for single-crystal film on insulating layer |
JPS59171114A (en) * | 1983-03-18 | 1984-09-27 | Agency Of Ind Science & Technol | Manufacture of semiconductor single crystal film |
JPS59140367A (en) * | 1983-12-27 | 1984-08-11 | Agency Of Ind Science & Technol | Method and device for producing thin film |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56115525A (en) | Manufacture of semiconductor device | |
JPS6466929A (en) | Method of forming defect-free single crystal thin layer of semiconductor material | |
DE2960880D1 (en) | Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration | |
JPS5680125A (en) | Formation of monocrystalline semiconductor film | |
JPS57157519A (en) | Manufacture of semiconductor device | |
JPS5633821A (en) | Photoannealing method for semiconductor layer | |
JPS5688317A (en) | Manufacture of semiconductor device | |
JPS566444A (en) | Production of semiconductor device | |
JPS5635434A (en) | Manufacturing of semiconductor device | |
JPS57208124A (en) | Manufacture of semiconductor device | |
JPS56126914A (en) | Manufacture of semiconductor device | |
JPS5645047A (en) | Manufacture of semiconductor monocrystal film | |
JPS575328A (en) | Growing method for semiconductor crystal | |
JPS6459807A (en) | Material for thin-film transistor | |
JPS57145316A (en) | Manufacture of semicondcutor device | |
JPS5683932A (en) | Production of semiconductor device | |
JPS6457615A (en) | Manufacture of thin film type semiconductor device | |
JPS56146231A (en) | Manufacture of semiconductor device | |
JPS56150821A (en) | Boat for heat treatment of semiconductor | |
JPS5646522A (en) | Semiconductor device and manufacture thereof | |
JPS5890723A (en) | Physical property changing method by laser beam irradiation | |
JPS6489511A (en) | Manufacture of single crystal silicon film | |
JPS5943815B2 (en) | epitaxial growth method | |
JPS5662335A (en) | Production of semiconductor | |
JPS5778134A (en) | Semiconductor device and manufacture thereof |