JPS5683932A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5683932A
JPS5683932A JP16177979A JP16177979A JPS5683932A JP S5683932 A JPS5683932 A JP S5683932A JP 16177979 A JP16177979 A JP 16177979A JP 16177979 A JP16177979 A JP 16177979A JP S5683932 A JPS5683932 A JP S5683932A
Authority
JP
Japan
Prior art keywords
layer
substrate
monocrystaline
laser
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16177979A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Takagi
Atsuo Nishikawa
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16177979A priority Critical patent/JPS5683932A/en
Publication of JPS5683932A publication Critical patent/JPS5683932A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a monocrystalline layer of a good quality by converting a polycrystalline semiconductor into a monocrystaline semiconductor with the irradiation of a laser or an electronic beam after formed on crystalline insulating substrate. CONSTITUTION:A sapphire substrate is treated in SiH4 at 650 deg.C to form a polysilicon thin film. Subsequently, a laser or an electronic beam are irradiated to meet and recrystallize polysilicon. A monocrystalline Si layer can be obtained under the influence of a crystal surface of the underlying sapphire. This method eliminates rediffusion of impurities from the substrate to obtain a monocrystaline layer of a good quality.
JP16177979A 1979-12-12 1979-12-12 Production of semiconductor device Pending JPS5683932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16177979A JPS5683932A (en) 1979-12-12 1979-12-12 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16177979A JPS5683932A (en) 1979-12-12 1979-12-12 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5683932A true JPS5683932A (en) 1981-07-08

Family

ID=15741739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16177979A Pending JPS5683932A (en) 1979-12-12 1979-12-12 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683932A (en)

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