JPS6322610B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel manufacturing apparatus for manufacturing highly densely integrated semiconductor devices such as large scale integrated semiconductor circuit (LSI) devices.

Conventionally, when manufacturing highly densely integrated semiconductor devices such as LSI devices, semiconductor substrates (hereinafter referred to as "covered substrates") made of silicon, potassium arsenide, etc., on which semiconductor devices are to be formed, are stored in an air-cleaning room with extremely low dust. A film formation process of forming a desired film on the main surface of the processing substrate (referred to as "processed substrate"); an impurity diffusion process of forming a desired impurity diffusion layer on the main surface of the processing target substrate;
For each manufacturing process, such as an annealing process that removes thermal stress remaining on the processed substrate, the manufacturing equipment used for that process is placed, and the processed substrate processed in each manufacturing process is placed in a case or rack made of plastic such as Teflon. It was then transferred to the next process.
In addition, monitoring tests were performed as necessary to check the film formation state of the substrate to be processed, the sheet resistance of the impurity diffusion layer, the state of occurrence of dust, foreign matter, etc. on the main surface, and the like. In such cases, especially in highly-integrated LSI devices, defects in the processed substrate may occur due to dust caused by jigs and workers during transfer, transportation, and monitoring inspection of the processed substrate. This defect was likely to cause a decrease in product yield.

The present invention has been made in view of the above-mentioned points, and a substrate to be processed is housed and held in a container capable of achieving a desired degree of vacuum, and an electron beam source or an ion beam source provided in the container is An electron beam or an ion beam that is emitted and accelerated and focused and deflected by an electromagnetic field lens and a charged beam deflection means, or a laser beam that is introduced into the container and whose position is controlled by a laser beam position control means, is applied to the substrate to be processed. The main surface of the substrate to be processed is subjected to scanning irradiation so that a film formation process, an impurity diffusion process, and an annealing process can be continuously performed on the main surface of the substrate to be processed, and the state of the main surface of the substrate to be processed is non-monitored and inspected. It is an object of the present invention to provide a novel semiconductor device manufacturing apparatus that suppresses the occurrence of defects in a substrate to be processed due to external dust by making it possible to conduct the process in a contact manner.

FIG. 1 is a block diagram schematically showing the structure of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

In the figure, 1 is the main body container of this embodiment, and this main body container 1 includes a charged beam source chamber 1a in which an electron beam source 2 that emits an electron beam and an ion beam source 3 that emits an ion beam are arranged; An electric field lens 4 accelerates and focuses the electron beam emitted by the beam source 2 or the ion beam emitted by the ion beam source 3, and a magnetic field lens 5 converges the accelerated and focused electron beam or ion beam. It is composed of a charged beam control chamber 1b in which a charged beam deflecting means 6 such as a deflection electrode and a deflection coil for deflecting the electron beam or ion beam is arranged, and a substrate storage chamber 1c in which a substrate 100 to be processed is accommodated and held. . 7 and 8
are provided on the partition wall between the charged beam source chamber 1a and the charged beam control chamber 1b, and on the partition wall between the charged beam control chamber 1b and the substrate storage chamber 1c, respectively. It is a small aperture that can be evacuated to the desired degree of vacuum. The aperture 8 is provided with an air valve (not shown) that can completely separate the charged beam control chamber 1b and the substrate storage chamber 1c. Note that the electron beam source 2 has both apertures 7 and 8.
The ion beam source 3 is fixed at the upper part of the charged beam source chamber 1a on a line passing through the center of It is translated in parallel to a position 3' on the aperture 7 shown by a dashed line. Reference numeral 9 indicated by a dashed line is a charged beam path through which the electron beam or ion beam emitted from the electron beam source 2 or ion beam source 3 passes. 10a, 10b, and 10c are vacuum devices connected to the charged beam source chamber 1a, charged beam control chamber 1b, and substrate storage chamber 1c, respectively, and evacuate the interiors of these chambers 1a, 1b, and 1c to a desired degree of vacuum. Reference numeral 11 denotes a laser oscillator provided outside the substrate storage chamber 1c, and the laser beam outputted by this laser oscillator 11 is introduced into the substrate storage chamber 1c through a transparent window 12 provided on the upper side wall of the substrate storage chamber 1c and is reflected. - The reflection position is controlled by a splitting half mirror 13, and the main surface of the substrate 100 to be processed is scanned and irradiated through a condenser lens 14. Note that the half mirror 13 and the condensing lens 14 are installed at a position away from above the substrate 100 to be processed when the laser output light from the laser oscillator 11 is not irradiated onto the substrate 100 to be processed, and when the laser output light from the laser oscillator 11 is not irradiated to the substrate 100 to be processed, the half mirror 13 and the condensing lens 14 are It is translated in parallel to positions 13' and 14' shown by dashed lines above. 15 is a mirror control mechanism that mechanically controls the half mirror 13 at high speed and with high precision; 16 is provided at the bottom of the substrate storage chamber 1c that intersects a line passing through the centers of both apertures 7 and 8, that is, the charged beam path 9; This is a substrate holding stand that holds the substrate 100 to be processed on its surface by vacuum suction. A vacuum buffer chamber 17 is provided so as to penetrate the bottom side wall of the substrate storage chamber 1c and communicate with the substrate storage chamber 1c on one side, and 18 is provided so as to communicate with the other side of the vacuum buffer chamber 17. 18a is a door that can hermetically close the opening of the substrate introduction chamber 17, and 19 is a substrate storage chamber 1c and a vacuum buffer chamber. an airlock valve provided in the communication section with 17;
Reference numeral 20 denotes an air valve provided in a communication section between the vacuum buffer chamber 17 and the substrate introduction chamber 18. Note that by alternately opening and closing these air valves 19 and 20, the substrate 100 to be processed in the substrate introduction chamber 18 can be passed through the vacuum buffer chamber 17 without reducing the degree of vacuum in the substrate storage chamber 1c. The substrate 100 to be processed in the substrate storage chamber 1c can be inserted into the substrate storage chamber 1c or pulled out into the substrate introduction chamber 18 through the vacuum buffer chamber 17. A gas supply device 21 is connected to the substrate storage chamber 1c and supplies gas such as high-purity oxygen, freon, nitrogen, etc. This is a plasma forming electrode that turns the gas supplied from the supply device 21 into plasma. Reference numeral 23 is movably provided in the substrate storage chamber 1c, and records the film formation state on the main surface of the substrate 100 to be processed, the sheet resistance of the impurity diffusion layer, dust on the main surface,
This inspection device 23 non-contactly monitors and inspects the state of occurrence of foreign matter, etc. When monitoring and inspecting the substrate 100 to be processed,
23' shown by a dashed line above the substrate 100 to be processed
be moved to the position of 24 is an electric field lens 4;
A charged beam control device that is connected to a magnetic field lens 5 and a charged beam deflection means 6 and controls acceleration, convergence and deflection of a charged beam emitted from an electron beam source 2 or an ion beam source 3. 25a, 25b and 25
c are electron beam source 2 and ion beam source 3, respectively.
and a DC high-voltage power supply connected to the laser oscillator 11, and 26 a plasma generation power supply connected to the plasma generation electrode 22. 27 and 28 are a monitor TV picture tube that is connected to the inspection device 23 and displays the inspection results of the inspection device 23, and a data logger that accumulates the inspection results of the inspection device 23; Compare the value with the standard value to determine NO/GO in processing.
This judgment result is sent to the DC high voltage power supply 25.
a, 25b, and 25c as well as the plasma generation power source 26 to optimize the processing conditions.

In the device of this embodiment configured in this way,
When forming a nitride film or an oxide film on the main surface of the substrate to be processed 100 held in the substrate storage chamber 1, nitrogen or oxygen is injected from the gas supply device 21 into the substrate storage chamber 1c, and the nitrogen or oxygen is injected into the substrate storage chamber 1c. Alternatively, in an oxygen atmosphere, the main surface of the substrate 100 to be processed is scanned and irradiated with an electron beam emitted from the electron beam source 2 and accelerated, focused and deflected by the electric field lens 4, the magnetic field lens 5, and the charged beam deflection means 6. Alternatively, the aperture 8 is closed with an air valve (not shown), and the nitrogen or oxygen injected from the gas supply device 21 into the substrate storage chamber 1c is converted into active radicals of nitrogen or oxygen by the plasma forming electrode 22. A plasma film is formed on the main surface of the substrate 100 to be processed in a plasma state in which a large amount of
This can be carried out by scanning and irradiating the main surface of the substrate 100 to be processed with a laser beam whose position is controlled by 3. Similarly, the main surface of the substrate 100 to be processed can be plasma-etched by making the interior of the substrate storage chamber 1c into a plasma state in which many active radicals of oxygen or fluorine exist. It is also possible to directly etch unnecessary portions of the nitride film by scanning and irradiating the nitride film formed on the main surface of the substrate 100 with controlled laser light. In addition, when forming an impurity diffusion layer on the main surface of the substrate 100 to be processed, impurity ions emitted from the ion beam source 3 are accelerated, focused and deflected by the electric field lens 4, the magnetic field lens 5, and the charged beam deflection means 6. This can be performed by scanning and irradiating the main surface of the substrate 100 with a beam and implanting impurity ions. In addition, in the case of annealing to remove thermal stress remaining on the main surface of the substrate 100 to be processed, the main surface of the substrate 100 to be processed is
An electron beam emitted from an electron beam source 2 and accelerated and focused and deflected by an electric field lens 4, a magnetic field lens 5, and a charged beam deflection means 6, or an electron beam output from a laser oscillator 11 and driven by a mirror control mechanism 15 into a half mirror 13. Therefore, scanning irradiation can be performed with position-controlled laser light. Furthermore, using the inspection device 23, the film formation state on the main surface of the substrate 100 to be processed, the sheet resistance of the impurity diffusion layer,
It is possible to non-contactly monitor and inspect the state of occurrence of dust, foreign matter, etc. on the main surface, display the inspection results on the monitor TV picture tube 27 and accumulate them in the data logger 28, and collect the accumulated data. can be compared with the reference value to optimize the processing conditions.

In this way, the substrate to be processed 100 is placed in the substrate storage chamber 1.
The substrate to be processed 100 remains held in the
In addition to being able to sequentially perform film formation, impurity diffusion, and annealing on the main surface of the substrate 100, it is also possible to monitor and inspect the state of the main surface of the substrate 100. The occurrence of defects on the substrate 100 to be processed can be suppressed.

As described above, in the semiconductor device manufacturing apparatus according to the present invention, a semiconductor substrate on which a semiconductor device is to be formed is housed and held in a container that can be made into a desired gas atmosphere or a desired gas plasma atmosphere. , an electron beam or an ion beam emitted from an electron beam source or an ion beam source provided in the container and accelerated, focused and deflected by an electromagnetic field lens and a charged beam deflection means; or a laser beam position control means introduced into the container; By scanning and irradiating the main surface of the semiconductor substrate with a laser beam deflected by the semiconductor substrate, film formation processing, etching processing, impurity diffusion processing, and annealing processing can be performed on the main surface of the semiconductor substrate. Plasma processing can be performed using a plasma atmosphere, and furthermore, plasma processing can be accelerated or partial processing can be performed using a laser beam in the plasma atmosphere. Moreover, since these processes can be carried out in one container without exposing the product to outside air during the process, it is possible to improve quality and speed up the process. Furthermore, since the state of the main surface of the semiconductor substrate can be monitored and inspected in a non-contact manner, it is possible to prevent defects from occurring in the semiconductor substrate due to external dust. Further, by using the substrate insertion means consisting of two air valves and two chambers, it is possible to insert a semiconductor substrate into the chamber without substantially changing the atmosphere inside the substrate storage chamber.

[Brief explanation of the drawing]

FIG. 1 is a block diagram schematically showing the structure of a semiconductor device manufacturing apparatus according to an embodiment of the present invention. In the figure, 1 is a main body container, 1a is a charged beam source chamber, 1b is a charged beam control chamber, 1c is a substrate storage chamber, 2 is an electron beam source, 3 is an ion beam source, and 4
is an electric field lens, 5 is a magnetic field lens, 6 is a charged beam deflection means, 7 and 8 are apertures, 10a,
10b and 10c are vacuum devices, 13 is a half mirror (laser beam position control means), 15 is a mirror control mechanism (laser beam position control means), 17 and 1
8 is a vacuum buffer chamber and a substrate introduction chamber (substrate insertion means), 19 and 20 are air valves (substrate insertion means), 21 is a gas supply device, 22 is a plasma forming electrode, 23 is an inspection device, and 100 is a processed object. It is a substrate (semiconductor substrate).

Claims (1)

[Scope of Claims] 1. A charged beam source chamber in which an electron beam source that emits an electron beam and an ion beam source that emits an ion beam are arranged and that emits a selected one of the beams to a beam path; a charged beam control room in which an electromagnetic field lens that accelerates and focuses an emitted electron beam or an ion beam emitted by the ion beam source and a charged beam deflection means that deflects the accelerated and focused electron beam or ion beam; and a semiconductor element. A substrate storage chamber in which a semiconductor substrate to be formed is accommodated and held on the beam path is provided in sequence adjacent to each other, and each of the chambers communicates with each other via an aperture through which the electron beam or the ion beam can pass, and the charged beam is controlled. a main container configured to close an aperture between the chamber and the substrate storage chamber; a vacuum device connected to each of the chambers to evacuate each chamber to a desired degree of vacuum; installed in the substrate storage chamber; A laser beam position control means for controlling the movement of a half mirror in and out of the beam path to reflect the laser beam introduced into the chamber and align it with the beam path; and a laser beam position control means connected to the substrate storage chamber to supply a desired gas into the chamber. a gas supply device provided in the substrate storage chamber, a plasma forming electrode that converts the desired gas supplied from the gas supply device into the chamber into plasma; It has a vacuum buffer chamber provided so that its side surfaces communicate with each other, and an opening provided on the other side surface of the vacuum buffer chamber such that its side surfaces communicate with each other via a second air valve, into which the semiconductor substrate is introduced. A substrate insertion means comprising a substrate introduction chamber provided with a door that can airtightly close the opening, and a substrate insertion means movably provided in the substrate storage chamber to non-contactly inspect the condition of the main surface of the semiconductor substrate. an electron beam or an ion beam emitted from the electron beam source or the ion beam source and accelerated and focused and deflected by the electromagnetic field lens and the charged beam deflection means; A laser beam whose position is controlled by a laser beam position control means is scanned and irradiated onto the main surface of the semiconductor substrate to form a film on the main surface of the semiconductor substrate, an impurity diffusion process, an annealing process,
and plasma processing can be performed continuously, and the state of the main surface of the semiconductor substrate can be monitored and inspected in a non-contact manner using the inspection device, and the atmosphere inside the substrate storage chamber can be controlled. A semiconductor device manufacturing apparatus characterized in that the semiconductor substrate can be inserted into a room without being substantially changed.