JPS5679438A - Working device for charged particle beam - Google Patents

Working device for charged particle beam

Info

Publication number
JPS5679438A
JPS5679438A JP15638079A JP15638079A JPS5679438A JP S5679438 A JPS5679438 A JP S5679438A JP 15638079 A JP15638079 A JP 15638079A JP 15638079 A JP15638079 A JP 15638079A JP S5679438 A JPS5679438 A JP S5679438A
Authority
JP
Japan
Prior art keywords
ion
electron
annealed
ion beam
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15638079A
Other languages
Japanese (ja)
Inventor
Shintaro Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15638079A priority Critical patent/JPS5679438A/en
Publication of JPS5679438A publication Critical patent/JPS5679438A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To reduce a processing time and decrease a surface stain by a method wherein the titled working device is constituted by an ion beam generating device and an electron beam generating device, ion implanting layers are formed in one radiated body by ion beams and then annealed by electron beams. CONSTITUTION:Rotary table which is rotatable in a beam incoming direction is arranged in the target chamber 12, the radiated body 11 is placed on the rotary table, ions are implanted from the ion beam 16 from the ion source chamber 13, then annealed with the electron beam 19 from the electron gun 18. That is, the ion beam generated in the ion source chamber 13 is accelerated by the accelerator pipe 14, applied to a magnetic field deflector element 15, and while the selected ion beam 16 is scanned by a beam flux deflection scanner element 17, the ion beam 16 is irradiated upon the body 11 to form an ion implanted layer. Then, an orientation of the radiated body 11 is changed, a high brightness electron beam 19 from the electron gun 18 is irradiated through the beam flux deflector element 110 to anneal the ion implanted layer.
JP15638079A 1979-12-04 1979-12-04 Working device for charged particle beam Pending JPS5679438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15638079A JPS5679438A (en) 1979-12-04 1979-12-04 Working device for charged particle beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15638079A JPS5679438A (en) 1979-12-04 1979-12-04 Working device for charged particle beam

Publications (1)

Publication Number Publication Date
JPS5679438A true JPS5679438A (en) 1981-06-30

Family

ID=15626479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15638079A Pending JPS5679438A (en) 1979-12-04 1979-12-04 Working device for charged particle beam

Country Status (1)

Country Link
JP (1) JPS5679438A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842152A (en) * 1981-09-08 1983-03-11 Akashi Seisakusho Co Ltd Anneal heating method and device of specimen through scan charge particle beam
JPS5850737A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Manufacture apparatus for semiconductor element
JPS5943520A (en) * 1982-09-03 1984-03-10 Agency Of Ind Science & Technol Maskless ion implanting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842152A (en) * 1981-09-08 1983-03-11 Akashi Seisakusho Co Ltd Anneal heating method and device of specimen through scan charge particle beam
JPS6332221B2 (en) * 1981-09-08 1988-06-29 Akashi Seisakusho Kk
JPS5850737A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Manufacture apparatus for semiconductor element
JPS6322610B2 (en) * 1981-09-21 1988-05-12 Mitsubishi Electric Corp
JPS5943520A (en) * 1982-09-03 1984-03-10 Agency Of Ind Science & Technol Maskless ion implanting device

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