JPS5633820A - Device for ion implantation - Google Patents

Device for ion implantation

Info

Publication number
JPS5633820A
JPS5633820A JP11005479A JP11005479A JPS5633820A JP S5633820 A JPS5633820 A JP S5633820A JP 11005479 A JP11005479 A JP 11005479A JP 11005479 A JP11005479 A JP 11005479A JP S5633820 A JPS5633820 A JP S5633820A
Authority
JP
Japan
Prior art keywords
mask
ion
ion implantation
deflecting plate
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11005479A
Other languages
Japanese (ja)
Inventor
Ryozo Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11005479A priority Critical patent/JPS5633820A/en
Publication of JPS5633820A publication Critical patent/JPS5633820A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To make possible selective ion implantation to optional positions by inserting a mask into a target chamber between a deflecting plate and an object whereto ions are to be implanted so that the covering position of the mask can be changed. CONSTITUTION:Ion beams generated in an ion source 1 are accelerated by an accelerator 2, separated by a separator 3 and then implanted to an ion implantation object 7 such as a semiconductor wafer in a target chamber 4 via a deflecting plate 6. Between the deflecting plate 6 and the wafer 7 in this chamber 4, a mask 9 is inserted movably in the vertical direction so that its covering position can be change. In the mask 9, an ion passage 10a and an ion stopper 10b are provided. By so doing, ion implantation can be applied to the optional positions of the wafer moving the position of the mask 9 vertically.
JP11005479A 1979-08-29 1979-08-29 Device for ion implantation Pending JPS5633820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11005479A JPS5633820A (en) 1979-08-29 1979-08-29 Device for ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11005479A JPS5633820A (en) 1979-08-29 1979-08-29 Device for ion implantation

Publications (1)

Publication Number Publication Date
JPS5633820A true JPS5633820A (en) 1981-04-04

Family

ID=14525915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11005479A Pending JPS5633820A (en) 1979-08-29 1979-08-29 Device for ion implantation

Country Status (1)

Country Link
JP (1) JPS5633820A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112537A (en) * 1982-12-17 1984-06-29 Matsushita Electric Ind Co Ltd Phosphor screen forming method
JPS60165718A (en) * 1984-02-08 1985-08-28 Agency Of Ind Science & Technol Constitution of ion optical system in maskless ion implantation
US5635006A (en) * 1989-06-19 1997-06-03 Matsushita Electric Industrial Co., Ltd. Pattern forming method and ink compostion
US5668018A (en) * 1995-06-07 1997-09-16 International Business Machines Corporation Method for defining a region on a wall of a semiconductor structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112537A (en) * 1982-12-17 1984-06-29 Matsushita Electric Ind Co Ltd Phosphor screen forming method
JPH0234408B2 (en) * 1982-12-17 1990-08-03 Matsushita Electric Ind Co Ltd
JPS60165718A (en) * 1984-02-08 1985-08-28 Agency Of Ind Science & Technol Constitution of ion optical system in maskless ion implantation
US5635006A (en) * 1989-06-19 1997-06-03 Matsushita Electric Industrial Co., Ltd. Pattern forming method and ink compostion
US5668018A (en) * 1995-06-07 1997-09-16 International Business Machines Corporation Method for defining a region on a wall of a semiconductor structure

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