JPS5633816A - Method and device for ion implantation - Google Patents

Method and device for ion implantation

Info

Publication number
JPS5633816A
JPS5633816A JP10916279A JP10916279A JPS5633816A JP S5633816 A JPS5633816 A JP S5633816A JP 10916279 A JP10916279 A JP 10916279A JP 10916279 A JP10916279 A JP 10916279A JP S5633816 A JPS5633816 A JP S5633816A
Authority
JP
Japan
Prior art keywords
ion
contaminants
ion beams
deflecting part
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10916279A
Other languages
Japanese (ja)
Other versions
JPH0125187B2 (en
Inventor
Takashi Tsuchimoto
Katsuhiko Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10916279A priority Critical patent/JPS5633816A/en
Publication of JPS5633816A publication Critical patent/JPS5633816A/en
Publication of JPH0125187B2 publication Critical patent/JPH0125187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To implant ion beams without contamination by preparing a process to obstruct and remove contaminants which are generated in an ion beam analyzing part and come flying to an ion implanting part owing to diffusion in vacuum at the time of ion implantation. CONSTITUTION:Implanting ion beams 16 and contaminants 15 that come flying are both introduced to a deflecting part 18 with a wide entrance, and the ion beams 16 are deflected so that they may go out of the deflecting part. At the exit of the deflecting part, a slit 17 is installed to throttle the exit so that the contaminants 15 may be reflected inside, may stick to the wall and the slit of the deflecting part and may not go to the direction of the ion beams 16. By so doing, detrimental contaminants are removed and required ion beams alone can be used for implantation.
JP10916279A 1979-08-29 1979-08-29 Method and device for ion implantation Granted JPS5633816A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10916279A JPS5633816A (en) 1979-08-29 1979-08-29 Method and device for ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10916279A JPS5633816A (en) 1979-08-29 1979-08-29 Method and device for ion implantation

Publications (2)

Publication Number Publication Date
JPS5633816A true JPS5633816A (en) 1981-04-04
JPH0125187B2 JPH0125187B2 (en) 1989-05-16

Family

ID=14503210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10916279A Granted JPS5633816A (en) 1979-08-29 1979-08-29 Method and device for ion implantation

Country Status (1)

Country Link
JP (1) JPS5633816A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981003239A1 (en) * 1980-05-02 1981-11-12 Hitachi Ltd Ion implantation apparatus for semiconductor manufacture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509898A (en) * 1973-06-04 1975-01-31
JPS5014079A (en) * 1973-06-07 1975-02-14

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509898A (en) * 1973-06-04 1975-01-31
JPS5014079A (en) * 1973-06-07 1975-02-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981003239A1 (en) * 1980-05-02 1981-11-12 Hitachi Ltd Ion implantation apparatus for semiconductor manufacture

Also Published As

Publication number Publication date
JPH0125187B2 (en) 1989-05-16

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