JPS57123639A - Method for monitoring ion current for ion implantation apparatus - Google Patents

Method for monitoring ion current for ion implantation apparatus

Info

Publication number
JPS57123639A
JPS57123639A JP802781A JP802781A JPS57123639A JP S57123639 A JPS57123639 A JP S57123639A JP 802781 A JP802781 A JP 802781A JP 802781 A JP802781 A JP 802781A JP S57123639 A JPS57123639 A JP S57123639A
Authority
JP
Japan
Prior art keywords
ion
ion implantation
shielding plate
ion beam
passageway
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP802781A
Other languages
Japanese (ja)
Other versions
JPS6329786B2 (en
Inventor
Mitsunori Ketsusako
Norio Kanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP802781A priority Critical patent/JPS57123639A/en
Publication of JPS57123639A publication Critical patent/JPS57123639A/en
Publication of JPS6329786B2 publication Critical patent/JPS6329786B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To make possible uniform correct ion implantation by a method wherein a slit-Faraday cup longer than the length of the longitudinal width of an ion beam is provided on both sides of an area for ion implantation to monitor ion beams. CONSTITUTION:An ion beam 51 accelerated and processed through mass separation after its emission from an ion implantation source is scanned in both right and left directions on a shielding plate 53 by an a.c. magnetic field. A limiting slit 50 is provided on the shielding plate and the ion beam that has passed through the shielding plate is emitted to a target plate 54 on the rear side. An object (semiconductor water) 55 into which ions are to be implanted moves upward and downward on the target plate so that ions are implanted into the object. A pair of Farady cups are provided on both sides of the passageway of the object and in close vicinity to the passageway. The opening of the object is rectangular and slightly longer than the longitudinal width of the limiting slit provided on the shielding plate. For this reason, uniform and correct ion implantation is made possible and, at the same time, the reliability of ion implanting operation can be improved.
JP802781A 1981-01-23 1981-01-23 Method for monitoring ion current for ion implantation apparatus Granted JPS57123639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP802781A JPS57123639A (en) 1981-01-23 1981-01-23 Method for monitoring ion current for ion implantation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP802781A JPS57123639A (en) 1981-01-23 1981-01-23 Method for monitoring ion current for ion implantation apparatus

Publications (2)

Publication Number Publication Date
JPS57123639A true JPS57123639A (en) 1982-08-02
JPS6329786B2 JPS6329786B2 (en) 1988-06-15

Family

ID=11681849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP802781A Granted JPS57123639A (en) 1981-01-23 1981-01-23 Method for monitoring ion current for ion implantation apparatus

Country Status (1)

Country Link
JP (1) JPS57123639A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068542A (en) * 1983-09-22 1985-04-19 Tokyo Erekutoron Kk Ion implantation device
JPS6386340A (en) * 1986-09-30 1988-04-16 Fujitsu Ltd Primary particle beam radiation device
EP0276229A1 (en) * 1986-05-16 1988-08-03 Varian Associates Dose measurement and uniformity monitoring system for ion implantation.
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
EP0431757A2 (en) * 1989-11-07 1991-06-12 Varian Associates, Inc. Ion implanter scanning mechanism
JP2001185072A (en) * 1999-10-12 2001-07-06 Applied Materials Inc Ion implanter and beam stop using the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233384U (en) * 1988-08-26 1990-03-02
JPH0344684U (en) * 1989-09-06 1991-04-25

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934190A (en) * 1972-08-01 1974-03-29
JPS4999158A (en) * 1972-12-14 1974-09-19
JPS531185A (en) * 1976-06-24 1978-01-07 Daicel Chem Ind Ltd Adsorbent for oily substances
JPS553643U (en) * 1978-06-21 1980-01-11
JPS5549417A (en) * 1978-10-06 1980-04-09 Nippon Kokan Kk <Nkk> Ice crusher for structure in freeze-up waters

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934190A (en) * 1972-08-01 1974-03-29
JPS4999158A (en) * 1972-12-14 1974-09-19
JPS531185A (en) * 1976-06-24 1978-01-07 Daicel Chem Ind Ltd Adsorbent for oily substances
JPS553643U (en) * 1978-06-21 1980-01-11
JPS5549417A (en) * 1978-10-06 1980-04-09 Nippon Kokan Kk <Nkk> Ice crusher for structure in freeze-up waters

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068542A (en) * 1983-09-22 1985-04-19 Tokyo Erekutoron Kk Ion implantation device
EP0276229A1 (en) * 1986-05-16 1988-08-03 Varian Associates Dose measurement and uniformity monitoring system for ion implantation.
JPH0628141B2 (en) * 1986-05-16 1994-04-13 バリアン・アソシエイツ・インコーポレイテッド Implant dose measurement and uniformity monitoring device for ion implantation
JPS6386340A (en) * 1986-09-30 1988-04-16 Fujitsu Ltd Primary particle beam radiation device
JPH0526294B2 (en) * 1986-09-30 1993-04-15 Fujitsu Kk
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
EP0431757A2 (en) * 1989-11-07 1991-06-12 Varian Associates, Inc. Ion implanter scanning mechanism
JP2001185072A (en) * 1999-10-12 2001-07-06 Applied Materials Inc Ion implanter and beam stop using the same

Also Published As

Publication number Publication date
JPS6329786B2 (en) 1988-06-15

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