JPS5652860A - Ion injection device - Google Patents

Ion injection device

Info

Publication number
JPS5652860A
JPS5652860A JP12753479A JP12753479A JPS5652860A JP S5652860 A JPS5652860 A JP S5652860A JP 12753479 A JP12753479 A JP 12753479A JP 12753479 A JP12753479 A JP 12753479A JP S5652860 A JPS5652860 A JP S5652860A
Authority
JP
Japan
Prior art keywords
base body
electron
ion
generated
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12753479A
Other languages
Japanese (ja)
Inventor
Katsuhiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12753479A priority Critical patent/JPS5652860A/en
Publication of JPS5652860A publication Critical patent/JPS5652860A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To prevent a dielectric breakdown of a treating base body by arranging an electron ray generator between an accelerator and the base body to be treated so as to avoid the accumulation of positive electrons on the surface of the base body due to electron electron beams irradiated thereon. CONSTITUTION:Ions which are generated at an ion generating source 1 is selected by an electromagnet 2 for ion mass analysis, and, after being accelerated by an acceralator 3, a resultant ion beam 4 irradiates the surface of a base body 6 to be treated. An electron ray generator 20 is arranged at the front of the base body 6, and electron rays E which are generated there neutralize positive electrons which have been accumulated on the surface of the base body 6. Thefintensity of the ion beams 4 irradiated is detected by a noncontact type current probe 19, and is measured by a measuring instrument 9. Electron rays E generated by the electron generator 20 may be incorporated in the ion beams 4.
JP12753479A 1979-10-01 1979-10-01 Ion injection device Pending JPS5652860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12753479A JPS5652860A (en) 1979-10-01 1979-10-01 Ion injection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12753479A JPS5652860A (en) 1979-10-01 1979-10-01 Ion injection device

Publications (1)

Publication Number Publication Date
JPS5652860A true JPS5652860A (en) 1981-05-12

Family

ID=14962383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12753479A Pending JPS5652860A (en) 1979-10-01 1979-10-01 Ion injection device

Country Status (1)

Country Link
JP (1) JPS5652860A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943520A (en) * 1982-09-03 1984-03-10 Agency Of Ind Science & Technol Maskless ion implanting device
JPS59210985A (en) * 1983-05-16 1984-11-29 Yoshiro Wakimura Auxiliary for curing acceleration
JPS6091630A (en) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd Impurity difusing process
JPS61248346A (en) * 1985-04-24 1986-11-05 マイクリオン・コーポレイション Converged ion beam processing apparatus and method
JPS6373354U (en) * 1986-11-01 1988-05-16
JPH0348854U (en) * 1989-09-18 1991-05-10
JPH06325710A (en) * 1993-05-14 1994-11-25 Hitachi Ltd Microwave ion source and ion implanting device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943520A (en) * 1982-09-03 1984-03-10 Agency Of Ind Science & Technol Maskless ion implanting device
JPS59210985A (en) * 1983-05-16 1984-11-29 Yoshiro Wakimura Auxiliary for curing acceleration
JPS6091630A (en) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd Impurity difusing process
JPS61248346A (en) * 1985-04-24 1986-11-05 マイクリオン・コーポレイション Converged ion beam processing apparatus and method
JPS6373354U (en) * 1986-11-01 1988-05-16
JPH0348854U (en) * 1989-09-18 1991-05-10
JPH06325710A (en) * 1993-05-14 1994-11-25 Hitachi Ltd Microwave ion source and ion implanting device

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