JPS5489475A - Ion implanting method - Google Patents

Ion implanting method

Info

Publication number
JPS5489475A
JPS5489475A JP15832177A JP15832177A JPS5489475A JP S5489475 A JPS5489475 A JP S5489475A JP 15832177 A JP15832177 A JP 15832177A JP 15832177 A JP15832177 A JP 15832177A JP S5489475 A JPS5489475 A JP S5489475A
Authority
JP
Japan
Prior art keywords
film
wafer
ions
ion implantation
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15832177A
Other languages
Japanese (ja)
Other versions
JPS5949685B2 (en
Inventor
Motoo Nakano
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15832177A priority Critical patent/JPS5949685B2/en
Publication of JPS5489475A publication Critical patent/JPS5489475A/en
Publication of JPS5949685B2 publication Critical patent/JPS5949685B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: To obviate the production of insulation breakdown in film despite high dose quantity by performing ion implantation while radiating ultraviolet rays to the wafer at the time of implanting ions to the semiconductor wafer provided with the insulation film on the surface.
CONSTITUTION: At the time of implanting ions 3 to a semiconductor wafer 1 which has been deposited with insulation film 2 on the surface, an ultraviolet ray source is beforehand disposed near the wafer 1 and ions 3 are implanted while radiating ultraviolet rays to the wafer 1. Here, if ulraviolet rays are radiated to the wafer 1, the pairs of electrons (e) and holes (h) are produced like in ion implantation but unlike in the ion implantation they evolve even where the film 2 is deep. Hence, many of the holes (h) having been produced arrive at the wafer 1 and will be released therefrom without being affected by the traps near the surface of the film 2. As a result, the remained electrons (e) migrate to the surface of the film 2 and neutralize the ions 3. Hence, no ion charges are accumulated near the surface of the film 2 and no insulation breakdown occurs.
COPYRIGHT: (C)1979,JPO&Japio
JP15832177A 1977-12-27 1977-12-27 Ion implantation method Expired JPS5949685B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15832177A JPS5949685B2 (en) 1977-12-27 1977-12-27 Ion implantation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15832177A JPS5949685B2 (en) 1977-12-27 1977-12-27 Ion implantation method

Publications (2)

Publication Number Publication Date
JPS5489475A true JPS5489475A (en) 1979-07-16
JPS5949685B2 JPS5949685B2 (en) 1984-12-04

Family

ID=15669073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15832177A Expired JPS5949685B2 (en) 1977-12-27 1977-12-27 Ion implantation method

Country Status (1)

Country Link
JP (1) JPS5949685B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882519A (en) * 1981-11-12 1983-05-18 Toshiba Corp Ion implantation for semiconductor
JPS5985858A (en) * 1982-11-09 1984-05-17 Toshiba Corp Ion implantation device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882519A (en) * 1981-11-12 1983-05-18 Toshiba Corp Ion implantation for semiconductor
JPH0517699B2 (en) * 1981-11-12 1993-03-09 Tokyo Shibaura Electric Co
JPS5985858A (en) * 1982-11-09 1984-05-17 Toshiba Corp Ion implantation device

Also Published As

Publication number Publication date
JPS5949685B2 (en) 1984-12-04

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