JPS6250073B2 - - Google Patents
Info
- Publication number
- JPS6250073B2 JPS6250073B2 JP56077219A JP7721981A JPS6250073B2 JP S6250073 B2 JPS6250073 B2 JP S6250073B2 JP 56077219 A JP56077219 A JP 56077219A JP 7721981 A JP7721981 A JP 7721981A JP S6250073 B2 JPS6250073 B2 JP S6250073B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- deposited
- block
- solder
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000007738 vacuum evaporation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000007740 vapor deposition Methods 0.000 description 14
- 239000005357 flat glass Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Die Bonding (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
本発明は金属被膜形成方法に関するものであ
り、特に半導体レーザのダイスボンド用マウント
材料へのハンダ金属の蒸着法およびそのエツチン
グ法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a metal film, and more particularly to a method for vapor depositing a solder metal onto a mounting material for die bonding of a semiconductor laser, and a method for etching the solder metal.
半導体レーザはレーザ光が素子端面から放出さ
れるため、端面がパツケージ外部から見えるよう
にしなければならず、また発光部の電流密度が他
の半導体素子に比べ一桁高いため、マウント材料
は適当なヒートシンクでなければならない。その
ため、ダイスボンドの形態は一般の半導体素子と
全く異なつたものとなる。 Since laser light is emitted from the device end face of a semiconductor laser, the end face must be visible from outside the package, and the current density in the light emitting part is an order of magnitude higher than that of other semiconductor devices, so the mounting material must be appropriately selected. Must be a heat sink. Therefore, the form of the die bond is completely different from that of a general semiconductor element.
第１図に半導体レーザのダイスボンドの一例を
示す。半導体レーザ素子１４は熱放散をよくする
ため発光部である活性領域１３がヒートシンクに
なるべく近いように、アツプサイド＝ダウンの状
態（上下をひつくり返した状態）でボンデイング
される。マウント材料はCuで作られたブロツク
１０であり、このブロツク１０はヒートシンクを
兼ねている。また、レーザ端面が正しく垂直にな
るように、ブロツク１０の角は正確に直角にして
いる。このCuでできたブロツク１０と半導体レ
ーザ１４の接着はハンダ材料のIn薄膜１１に熱を
加え融着することによりおこなう。半導体レーザ
１４は、先ほど述べたようにアツプサイド＝ダウ
ンの状態でブロツク１０にボンデイングされるた
め、ｐ−ｎ接合１２とハンダのIn膜１１との間隔
は２〜３μｍ程度しかなく、また、半導体レーザ
１４との接着をよくするため、In膜は表面が清浄
な膜厚制御された薄膜でなくてはならない。 FIG. 1 shows an example of a die bond for a semiconductor laser. In order to improve heat dissipation, the semiconductor laser element 14 is bonded in an upside-down state (turned upside down) so that the active region 13, which is a light emitting part, is as close to a heat sink as possible. The mounting material is a block 10 made of Cu, and this block 10 also serves as a heat sink. Further, the corners of the block 10 are made exactly at right angles so that the laser end face is properly vertical. The block 10 made of Cu and the semiconductor laser 14 are bonded by applying heat to the In thin film 11, which is a solder material, to fuse them. As mentioned earlier, the semiconductor laser 14 is bonded to the block 10 in an upside-down state, so the distance between the p-n junction 12 and the solder In film 11 is only about 2 to 3 μm, and the semiconductor laser In order to have good adhesion with 14, the In film must be a thin film with a clean surface and a controlled thickness.
従来、このマウント材料へのハンダ金属の蒸着
およびエツチングは、Cuブロツク１０へIn１１
を真空蒸着した後、個別にIn１１をエツチングし
た後、半導体レーザのボンデイングを行つてい
た。しかし、この方法では一度に処理できるマウ
ント材料の数が限られ、大量にレーザを生産する
には多数個を同時処理する技術が必要不可欠なも
のとなつた。 Conventionally, the deposition and etching of solder metal onto this mounting material has been performed by depositing In11 onto Cu block 10.
After vacuum-depositing In11, the In11 was individually etched, and then the semiconductor laser was bonded. However, with this method, the number of mount materials that can be processed at one time is limited, and in order to mass-produce lasers, technology that can simultaneously process a large number of mount materials has become essential.
以下、第２図を用いて従来の欠点を具体的に説
明すると次のようになる。第２図は平板ガラス１
５上にレーザマウント材料であるCuブロツク１
４が被蒸着物として置かれており、In蒸着膜１１
が蒸着されていることを示している。 Hereinafter, the drawbacks of the conventional method will be explained in detail with reference to FIG. 2. Figure 2 shows flat glass 1
Cu block 1, which is a laser mount material, is placed on top of 5.
4 is placed as an object to be deposited, and the In deposited film 11
It shows that is vapor-deposited.
このIn蒸着膜１１の蒸着が終了した時点では、
Cuブロツク１４上のIn蒸着膜１１の表面は荒い
ため、そのまま、このCuブロツク１４に半導体
レーザを第１図のごとくボンデイングすると付着
強度は弱くなる。そのため、表面を平滑にし、清
浄化するためにIn蒸着膜１１にエツチングなどの
表面処理を行なわなければならない。通常、この
表面処理は塩酸系の液を用いるエツチングによつ
て行なわれる。 When the vapor deposition of this In vapor deposition film 11 is completed,
Since the surface of the In vapor deposited film 11 on the Cu block 14 is rough, if a semiconductor laser is directly bonded to the Cu block 14 as shown in FIG. 1, the adhesion strength will be weakened. Therefore, the In vapor deposited film 11 must be subjected to surface treatment such as etching in order to smooth and clean the surface. This surface treatment is usually performed by etching using a hydrochloric acid solution.
従来例を示す第２図においては蒸着台座である
平板ガラス１５にCuブロツク１４を載せた状態
のままでエツチングを行つていたが、この場合平
板ガラス１５とIn蒸着膜１１の付着強度が充分で
ないため、エツチング工程中に液が平板ガラス１
５とIn蒸着膜１１の界面にしみ込み、In蒸着膜が
平板ガラスよりはく離してしまう欠点があつた。
Cuブロツク１４は実際の工程では多数個置かれ
ているため、In蒸着膜１１のはく離と同時にCu
ブロツク１４が平板ガラス１５よりはずれた時、
Cuブロツク１４同士がIn蒸着膜１１の粘性によ
りくつつき合い、良好なエツチングおよびエツチ
ング後の使用が不可能となつてしまう。このよう
な理由から、エツチングにおいて多数個同時処理
することは不可能であつた。 In FIG. 2, which shows a conventional example, etching was performed with the Cu block 14 placed on the flat glass 15, which is a vapor deposition base, but in this case, the adhesion strength between the flat glass 15 and the In vapor deposition film 11 was sufficient. Therefore, during the etching process, the liquid is exposed to the flat glass 1.
5 and the In vapor-deposited film 11, which caused the In vapor-deposited film to peel off from the flat glass.
Since a large number of Cu blocks 14 are placed in the actual process, the Cu blocks 14 are removed at the same time as the In vapor deposition film 11 is peeled off.
When the block 14 comes off the flat glass 15,
The Cu blocks 14 stick together due to the viscosity of the In deposited film 11, making it impossible to perform good etching and use after etching. For these reasons, it has been impossible to simultaneously process a large number of substrates during etching.
本発明は上記従来の欠点を除去し、多数個のマ
ウント材料へのハンダ材料蒸着、および表面処理
を同時に行なうことを可能ならしめる金属被膜形
成方法を提供するものである。 The present invention eliminates the above-mentioned conventional drawbacks and provides a method for forming a metal film that enables simultaneous vapor deposition of solder material and surface treatment on a large number of mounting materials.
以下実施例をあげて本発明の金属被膜形成方法
を具体的に説明する。第３図は本発明の一実施例
における金属被膜形成方法を説明するための断面
図を示す。 The method for forming a metal film of the present invention will be specifically explained below with reference to Examples. FIG. 3 shows a cross-sectional view for explaining a method of forming a metal film in an embodiment of the present invention.
レーザマウント材料であるCuブロツク１９
は、被蒸着物として、蒸着台座である平板ガラス
１５上に多数個同時に置かれる（図では１個のみ
示す）。本実施例では平板ガラス１５上にTi層１
６を介してPt層１７を形成して、蒸着台座として
いる。Ti層１６は平板ガラス１５とPt層１７の
付着を強化するために設けられている。通常これ
ら各層はAr雰囲気中での高周波スパツタリング
によつて形成し、この実施例では、Ti層１６は
300W出力で５分間、Pt層１７は200W出力で10分
間スパツタ蒸着し、Ti層１６は1000Å、Pt層１
７は2500Åの膜厚とした。 Cu block 19 is a laser mount material
A large number of these are simultaneously placed as objects to be deposited on the flat glass 15 which is a deposition pedestal (only one is shown in the figure). In this embodiment, a Ti layer 1 is placed on the flat glass 15.
A Pt layer 17 is formed through the layer 6 to serve as a vapor deposition base. The Ti layer 16 is provided to strengthen the adhesion between the flat glass 15 and the Pt layer 17. Normally, each of these layers is formed by high frequency sputtering in an Ar atmosphere, and in this embodiment, the Ti layer 16 is
Pt layer 17 was sputter-deposited at 300W power for 5 minutes, Pt layer 17 was sputter-deposited at 200W power for 10 minutes, Ti layer 16 was sputter-deposited at 1000Å, Pt layer 1
7 had a film thickness of 2500 Å.
このように蒸着台座上に置かれたCuブロツク
１９にハンダ材料Inを蒸着する。蒸着は図上ｙ軸
上方から行ない、結果としてInハンダ膜１８が
Cuブロツク１９、および平板ガラス１５、Ti層
１６、Pt層１７よりなる蒸着台座上に形成され
る。この時の真空度は２〜６×10-6torrで、0.6ｇ
のIn球を12〜14Aの電流を印加したタングステン
ヒーターで加熱することにより真空蒸着され、10
分の蒸着で1.8μｍの膜厚のInハンダ層１８が得
られる。 The solder material In is vapor-deposited on the Cu block 19 placed on the vapor deposition pedestal in this manner. Vapor deposition is performed from above the y-axis in the figure, and as a result, the In solder film 18 is
It is formed on a vapor deposition base consisting of a Cu block 19, a flat glass 15, a Ti layer 16, and a Pt layer 17. The degree of vacuum at this time is 2 to 6 x 10 -6 torr and 0.6g
vacuum evaporated by heating an In bulb with a tungsten heater applying a current of 12 to 14 A, and
An In solder layer 18 having a thickness of 1.8 μm is obtained by vapor deposition for 1 minute.
先ほど述べたように蒸着が終了した時点では、
Cuブロツク１９上のInハンダ膜１８の表面状態
は荒いため、そのまま半導体レーザをボンデイン
グしても付着強度は弱く、Inハンダ膜の表面の平
滑化、清浄化のため、エツチングによる表面処理
を行なう。 As mentioned earlier, when the deposition is finished,
Since the surface condition of the In solder film 18 on the Cu block 19 is rough, the adhesion strength is weak even if a semiconductor laser is bonded as is, so a surface treatment by etching is performed to smooth and clean the surface of the In solder film.
本実施例では、従来例を示す第２図と異なり、
蒸着台座の表面には白金１７を露出させている。
白金１７とInハンダ膜１８との相互の付着強度は
十分強いため、Cuブロツク１９を載置した状態
でInハンダ膜１８のエツチングを行なつてもInハ
ンダ膜１８は蒸着台座から剥離する事態が生じな
い。また、このInハンダ膜１８の蒸着によりInは
Cuブロツク１９と蒸着台座とのコーナー部２０
も充分にカバーするため、エツチング時およびエ
ツチング後の流水洗滌においてもCuブロツク１
９は蒸着台座よりはずれることはない。 In this embodiment, unlike FIG. 2 showing the conventional example,
Platinum 17 is exposed on the surface of the vapor deposition pedestal.
Since the adhesion strength between the platinum 17 and the In solder film 18 is sufficiently strong, even if the In solder film 18 is etched with the Cu block 19 mounted, the In solder film 18 will not peel off from the evaporation base. Does not occur. In addition, due to the vapor deposition of this In solder film 18, In
Corner part 20 between Cu block 19 and vapor deposition pedestal
In order to sufficiently cover the Cu block 1 during etching and when washing with running water after etching,
9 will not be removed from the evaporation pedestal.
この実施例ではH2O：HCl＝１：２、液温25℃
のエツチング液を用い、蒸着台座にCuブロツク
の載つたままエツチングを１分間続け、30分間の
流水洗滌をすることにより、８×８cmの蒸着台座
上で600個のレーザマウント材料の同時表面処理
ができるようになつた。 In this example, H2O :HCl=1:2, liquid temperature 25℃
Using an etching solution of Now I can do it.
以上のようにして、蒸着台座の表面に白金を設
けることにより、レーザマウント材料へのIn蒸着
およびエツチングによる表面処理の多数個同時処
理が可能となつた。 By providing platinum on the surface of the evaporation pedestal in the manner described above, it became possible to simultaneously perform surface treatment on a large number of laser mount materials by indium evaporation and etching.
本発明に関し一実施例をあげて詳しく述べたが
被蒸着物としては半導体レーザのマウント材料に
限るものではない。また蒸着金属もInに限らず、
Sn、Sn−Pb合金など他の材料でも可能である。 Although the present invention has been described in detail with reference to one embodiment, the material to be deposited is not limited to a mounting material for a semiconductor laser. In addition, vapor-deposited metals are not limited to In.
Other materials such as Sn and Sn-Pb alloys are also possible.
以上のように、本発明の金属被膜形成方法は、
多数個の半導体レーザ等のチツプのマウントに有
利なものであり、その工程的価値は大きい。 As described above, the metal film forming method of the present invention includes:
It is advantageous for mounting a large number of chips such as semiconductor lasers, and its process value is great.
第１図は半導体レーザのダイスボンドの状態を
示す図、第２図は従来の金属被膜形成方法を説明
するための断面図、第３図は本発明の一実施例に
おける金属被膜形成方法を説明するための断面図
である。
１５……平板ガラス、１６……Ti層、１７…
…Pt層、１８……蒸着されたInハンダ膜、１９…
…Cuブロツク。
FIG. 1 is a diagram showing the state of die bonding of a semiconductor laser, FIG. 2 is a cross-sectional view for explaining a conventional method for forming a metal film, and FIG. 3 is for explaining a method for forming a metal film in an embodiment of the present invention. FIG. 15...Flat glass, 16...Ti layer, 17...
...Pt layer, 18... Vapor-deposited In solder film, 19...
…Cu block.
Claims (1)
着またはスパツタリングにより附着し、前記被蒸
着物体を台座より取りはずすことなく、前記金属
膜の表面にエツチング処理を施す金属被膜形成方
法において、前記台座の少くとも表面部に白金を
形成することを特徴とする金属被膜形成方法。1. A method for forming a metal film, in which an object to be deposited is placed on a pedestal, a metal film is deposited by vacuum evaporation or sputtering, and the surface of the metal film is subjected to an etching process without removing the object to be deposited from the pedestal. A method for forming a metal film, comprising forming platinum on at least the surface of a pedestal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077219A JPS57192097A (en) | 1981-05-20 | 1981-05-20 | Formation of metal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077219A JPS57192097A (en) | 1981-05-20 | 1981-05-20 | Formation of metal film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57192097A JPS57192097A (en) | 1982-11-26 |
| JPS6250073B2 true JPS6250073B2 (en) | 1987-10-22 |
Family
ID=13627732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56077219A Granted JPS57192097A (en) | 1981-05-20 | 1981-05-20 | Formation of metal film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57192097A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62136829A (en) * | 1985-12-10 | 1987-06-19 | Sharp Corp | Die bonding method for optical semiconductor element |
-
1981
- 1981-05-20 JP JP56077219A patent/JPS57192097A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57192097A (en) | 1982-11-26 |
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