JPS62136829A - Die bonding method for optical semiconductor element - Google Patents
Die bonding method for optical semiconductor elementInfo
- Publication number
- JPS62136829A JPS62136829A JP27879885A JP27879885A JPS62136829A JP S62136829 A JPS62136829 A JP S62136829A JP 27879885 A JP27879885 A JP 27879885A JP 27879885 A JP27879885 A JP 27879885A JP S62136829 A JPS62136829 A JP S62136829A
- Authority
- JP
- Japan
- Prior art keywords
- die
- foil
- optical semiconductor
- semiconductor element
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
Abstract
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、光半導体素子のダイボンド方法に関する。[Detailed description of the invention] <Industrial application field> The present invention relates to a die bonding method for optical semiconductor devices.
〈発明の概要〉
本発明は、平板への蒸着により箔状ろう材を形成し、前
記箔状ろう材を平板よシ分離してヒートシンクに貼り付
け、その上に光半導体素子をダイボンドすることにより
、光半導体素子のサイズ及びダイボンド位置の変更が容
易となり、工程を簡略化できる。<Summary of the Invention> The present invention involves forming a foil brazing material by vapor deposition on a flat plate, separating the foil brazing material into a flat plate, pasting it on a heat sink, and die-bonding an optical semiconductor element thereon. , it becomes easy to change the size of the optical semiconductor element and the die bonding position, and the process can be simplified.
〈従来の技術〉
従来は第３図に示すように、表面に熱伝導の良いＩｎや
Ｓｎ等のろう材１を蒸着やめっき等の方法で形成したヒ
ートシンク２上に、光半導体素子３を直接ポンディング
して、光半導体素子から発生する熱を効率良く放散させ
ていた。<Conventional technology> Conventionally, as shown in FIG. 3, an optical semiconductor element 3 is directly mounted on a heat sink 2 on which a brazing material 1 such as In or Sn with good thermal conductivity is formed on the surface by a method such as vapor deposition or plating. This was used to efficiently dissipate heat generated from optical semiconductor devices.
〈発明が解決しようとする問題点〉
しかし、上記方法では、ヒートシンク２の全面にろう材
１を形成しているので、ヒートシンク２に他の素子をつ
けるなどの他の工程の妨げとなり工程を複雑化していた
。<Problems to be Solved by the Invention> However, in the above method, since the brazing material 1 is formed on the entire surface of the heat sink 2, it interferes with other processes such as attaching other elements to the heat sink 2, complicating the process. It had become
また仮に、ヒートシンク２のダイボンド面のみにろう材
１を形成しようとすれば、ダイボンド面以外にろう材１
が形成されないようなホルダにヒートシンク２を１個ず
つセットする必要があり、工程数が非常に多くかかって
いた。Furthermore, if it is attempted to form the brazing material 1 only on the die bonding surface of the heat sink 2, the brazing material 1 will be formed on the die bonding surface only.
It was necessary to set the heat sinks 2 one by one in a holder that would prevent the formation of heat sinks, which required a very large number of steps.
本発明は上記欠点を解消した光半導体素子のダイボンド
方法を提供することを目的とする。An object of the present invention is to provide a die-bonding method for optical semiconductor devices that eliminates the above-mentioned drawbacks.
〈問題点を解決するための手段〉
本発明は、平板への蒸着にょシ箔状ろう材を形成する工
程、前記箔状ろう材を平板から分離してヒートシンクの
ダイボンド面に貼り付ける工程、ヒートシンクのダイボ
ンド面に光半導体素子をダイボンドする工程とからなる
ことを特徴とする。<Means for Solving the Problems> The present invention provides a process of forming a foil-like brazing material by vapor deposition on a flat plate, a process of separating the foil-like brazing material from the flat plate and pasting it on a die-bonding surface of a heat sink, The method is characterized by comprising a step of die-bonding an optical semiconductor element to the die-bonding surface of the method.
〈作 用〉
上記方法により、ヒートシンクのダイボンド部のみにろ
う材を供給することができる。<Function> By the above method, the brazing material can be supplied only to the die-bonding portion of the heat sink.
〈実施例〉 第１図及び第２図に本発明の一実施例を示す。<Example> An embodiment of the present invention is shown in FIGS. 1 and 2. FIG.
第１図（ａ）において、１１はＩｎ、５ｎ等の箔状ろう
材、２はヒートシンク、３は半導体レーザーなどの光半
導体素子である。箔状ろう材１１は第１図（ｂ）のよう
に、テフロンシート４への蒸着により形成される。この
箔状ろう材１１は、テフロンシート４から分離して第１
図（ａ）のようにヒートシンク２のダイボンド面に貼り
付け、さらにその箔状ろう材１１の上に光半導体素子３
をダイボンドするものである。なお、ダイボンド用ろう
材を圧延等で形成すると、Ｉｎではろう材の厚さは約１
００μｍが限度であシ、光半導体素子３に半導体レーザ
ーを用いた場合、素子厚と等しくなるためダイボンド用
ろう材として適当でない。In FIG. 1(a), 11 is a foil brazing material such as In or 5N, 2 is a heat sink, and 3 is an optical semiconductor element such as a semiconductor laser. The foil brazing material 11 is formed by vapor deposition on the Teflon sheet 4, as shown in FIG. 1(b). This foil brazing material 11 is separated from the Teflon sheet 4 and placed in a first
The optical semiconductor element 3 is pasted on the die-bonding surface of the heat sink 2 as shown in FIG.
It is used for die-bonding. Note that when the brazing material for die bonding is formed by rolling, etc., the thickness of the brazing material is approximately 1
00 μm is the limit, and when a semiconductor laser is used for the optical semiconductor device 3, the thickness becomes equal to the device thickness, so it is not suitable as a brazing material for die bonding.
また、テフロンシート４から箔状ろう材１１を分離する
前に、第２図のように、テフロンシート４を変形させて
おくと、よシ箔状ろう材１１をはかれやすくできる。Further, if the Teflon sheet 4 is deformed as shown in FIG. 2 before separating the foil-like brazing material 11 from the Teflon sheet 4, the foil-like brazing material 11 can be easily peeled off.
上記方法により、箔状ろう材１１を蒸着により形成した
ことにより、酸化の少ない表面状態の良好な、厚さ数μ
ｍの均一な箔状ろう材１１を得ることができ、ダイボン
ド性は良好である。さらにダイボンド部のみにろう箒を
供給できるので、他の素子を取シ付けるなどの他の工程
の妨げとならないと共に、光半導体素子３のサイズ及び
ダイボンド位置の変更が容易である。また、箔状ろう材
１１と蒸着する平板として、実施例のように特にテフロ
ンシート４を用いれば、汚染が少なく、はがれやすい箔
ができるので好都合である。By forming the foil brazing filler metal 11 by vapor deposition according to the above method, it has a thickness of several μm and has a good surface condition with little oxidation.
It is possible to obtain a foil-like brazing filler metal 11 having a uniform thickness of m, and the die-bonding properties are good. Furthermore, since the wax broom can be supplied only to the die bonding part, it does not interfere with other processes such as attaching other elements, and the size of the optical semiconductor element 3 and the die bonding position can be easily changed. Furthermore, it is advantageous to use the Teflon sheet 4 as in the embodiment as the flat plate on which the foil brazing filler metal 11 is vapor-deposited, since the foil can be easily peeled off with less contamination.
〈発明の効果〉
以上のように本発明によれば、品質の良いろう材を提供
でき、光半導体素子のサイズ及びダイボンド位置の変更
が容易であり、またダイボンド面のみにろう材を供給で
きるので、工程を簡略化する有用な光半導体素子のダイ
ボンド方法を提供できる。<Effects of the Invention> As described above, according to the present invention, a high-quality brazing material can be provided, the size of the optical semiconductor element and the die-bonding position can be easily changed, and the brazing material can be supplied only to the die-bonding surface. , it is possible to provide a useful die-bonding method for optical semiconductor devices that simplifies the process.
第１図は本発明の一実施例を示し、同図（ａ）は全体の
断面図、同図（ｂ）は同図（ａ）の要部部品の分離前の
溝成を示す断面図、第２図は同分離中の一工程例を説明
する斜視図、第３図は従来例を示す断面図である。
１１・・・箔状ろう材、 ２・・・ヒートシンク、
３・・・光半導体素子、 ４・・・テフロンシート。
′ＩＪＰ漏１−４＋誦工 帽 １ 謁 立／ ｌ＋Ｌ
＾〃λ（（７） Ｃｂ）第
１図
第２図
第３図FIG. 1 shows an embodiment of the present invention, in which FIG. 1(a) is an overall sectional view, FIG. 1(b) is a sectional view showing the groove structure of the main parts of FIG. 1(a) before separation, FIG. 2 is a perspective view illustrating an example of one step during separation, and FIG. 3 is a sectional view showing a conventional example. 11...Foil brazing filler metal, 2...Heat sink,
3... Optical semiconductor element, 4... Teflon sheet. 'IJP leak 1-4+Edited hat 1 Audience standing/l+L
＾〃λ((7) Cb)Figure 1Figure 2Figure 3
Claims (1)
導体素子のダイボンド方法において、平板への蒸着によ
り箔状ろう材を形成する工程、 前記箔状ろう材を平板から分離してヒートシンクのダイ
ボンド面に貼り付ける工程、 ヒートシンクのダイボンド面に光半導体素子をダイボン
ドする工程、 を有することを特徴とする光半導体素子のダイボンド方
法。 ２、前記平板として、テフロンシートを用いたことを特
徴とする特許請求の範囲第１項記載の光半導体素子のダ
イボンド方法。[Claims] 1. In a die-bonding method for optical semiconductor devices in which an optical semiconductor device is die-bonded to a heat sink, the step of forming a foil-like brazing material by vapor deposition on a flat plate; separating the foil-like brazing material from the flat plate and attaching the heat sink to the heat sink; A method for die-bonding an optical semiconductor element, comprising the steps of: attaching the optical semiconductor element to the die-bonding surface of a heat sink; and die-bonding the optical semiconductor element to the die-bonding surface of a heat sink. 2. The die-bonding method for optical semiconductor devices according to claim 1, wherein a Teflon sheet is used as the flat plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27879885A JPS62136829A (en) | 1985-12-10 | 1985-12-10 | Die bonding method for optical semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27879885A JPS62136829A (en) | 1985-12-10 | 1985-12-10 | Die bonding method for optical semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62136829A true JPS62136829A (en) | 1987-06-19 |
Family
ID=17602319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27879885A Pending JPS62136829A (en) | 1985-12-10 | 1985-12-10 | Die bonding method for optical semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62136829A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352264A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Soldering method |
| JPS53144695A (en) * | 1977-05-23 | 1978-12-16 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS54138371A (en) * | 1978-04-19 | 1979-10-26 | Nec Home Electronics Ltd | Solder supplying method |
| JPS5671518A (en) * | 1979-11-15 | 1981-06-15 | Seiko Epson Corp | Production of thin film |
| JPS56158434A (en) * | 1980-05-10 | 1981-12-07 | Toshiba Corp | Manufacture of semiconductor device |
| JPS57192097A (en) * | 1981-05-20 | 1982-11-26 | Matsushita Electric Ind Co Ltd | Formation of metal film |
-
1985
- 1985-12-10 JP JP27879885A patent/JPS62136829A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5352264A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Soldering method |
| JPS53144695A (en) * | 1977-05-23 | 1978-12-16 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS54138371A (en) * | 1978-04-19 | 1979-10-26 | Nec Home Electronics Ltd | Solder supplying method |
| JPS5671518A (en) * | 1979-11-15 | 1981-06-15 | Seiko Epson Corp | Production of thin film |
| JPS56158434A (en) * | 1980-05-10 | 1981-12-07 | Toshiba Corp | Manufacture of semiconductor device |
| JPS57192097A (en) * | 1981-05-20 | 1982-11-26 | Matsushita Electric Ind Co Ltd | Formation of metal film |
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