JPS62143496A - Die bonding method for photosemiconductor element - Google Patents
Die bonding method for photosemiconductor elementInfo
- Publication number
- JPS62143496A JPS62143496A JP28624185A JP28624185A JPS62143496A JP S62143496 A JPS62143496 A JP S62143496A JP 28624185 A JP28624185 A JP 28624185A JP 28624185 A JP28624185 A JP 28624185A JP S62143496 A JPS62143496 A JP S62143496A
- Authority
- JP
- Japan
- Prior art keywords
- foil
- heat sink
- die
- trowel
- brazing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、光半導体素子のダイボンド方法に関する。[Detailed description of the invention] <Industrial application field> The present invention relates to a die bonding method for optical semiconductor devices.
〈発明の概要〉
本発明は、平板への蒸着により箔状ろう材を形成し、前
記箔状ろう材を形成した平板をコテとヒートシンクの間
に挿入し、コテ及びヒートシンクに熱を加え、さらにコ
テに超音波をかけなからコテを加重することにより、平
板から箔状ろう材を分離しヒートシンクに転写し、その
上に光半導体素子をダイボンドすることにより、箔状ろ
う材の転写を容易にし、その表面の酸化を防ぐ。また、
光半導体素子のサイズ及びダイボンド位置の変更が容易
となり、工程を簡略化できる。<Summary of the Invention> The present invention involves forming a foil brazing material by vapor deposition on a flat plate, inserting the flat plate with the foil brazing material formed between a soldering iron and a heat sink, applying heat to the iron and the heat sink, and further By applying weight to the soldering iron without applying ultrasonic waves to the soldering iron, the foil-like soldering material is separated from the flat plate and transferred to the heat sink, and the optical semiconductor element is die-bonded on top of the soldering material, making it easier to transfer the foil-like soldering material. , prevent oxidation of its surface. Also,
It becomes easy to change the size of the optical semiconductor element and the die bonding position, and the process can be simplified.
〈従来の技術〉
従来は第４図に示すように、表面に熱伝導の良いＩｎや
Ｓｎ等のろう材Ｉを蒸着やめっき等の方法で形成したヒ
ートシンク２上に、光半導体装置３を直接ボンディング
して、光半導体素子から発生する熱を効率良く放散させ
ていた。<Prior art> Conventionally, as shown in FIG. 4, an optical semiconductor device 3 is directly mounted on a heat sink 2 on which a brazing material I such as In or Sn with good thermal conductivity is formed by vapor deposition or plating. Bonding was used to efficiently dissipate heat generated from optical semiconductor elements.
〈発明が解決しようとする問題点〉
しかし、上記方法では、ヒートシンク２の全面にろう材
１を形成しているので、ヒートシンク２に他の素子をつ
けるなどの他の工程の妨げとなり工程を複雑化していた
。<Problems to be Solved by the Invention> However, in the above method, since the brazing material 1 is formed on the entire surface of the heat sink 2, it interferes with other processes such as attaching other elements to the heat sink 2, complicating the process. It had become
また仮に、ヒートシンク２のダイボンド面のみにろう材
１を形成しようとすれば、ダイボンド面以外にろう材！
が形成されないようなホルダにヒートシンク２を１個ず
つセットする必要があり、工程数が非常に多くかかって
いた。Also, if you try to form the brazing filler metal 1 only on the die-bonding surface of the heat sink 2, the brazing filler metal 1 will be placed on the die-bonding surface only!
It was necessary to set the heat sinks 2 one by one in a holder that would prevent the formation of heat sinks, which required a very large number of steps.
本発明は上記欠点を解消した光半導体素子のダイボンド
方法を提供することを目的とする〇く問題点を解決する
ための手段〉
本発明は、平板への蒸着により箔状ろう材を形成する工
程、前記箔状ろう材を形成した平板をコテとヒートシン
クの間に挿入し、コテ及びヒートシンクに熱を加え、さ
らにコテに超音波をかけなからコテを加重することによ
り、平板から箔状ろう材を分離しヒートシンクのダイボ
ンド面に転写する工程、ヒートシンクのダイボンド面に
光半導体素子をダイボンドする工程とからなることを特
徴とする。An object of the present invention is to provide a die-bonding method for optical semiconductor devices that eliminates the above-mentioned drawbacks. , by inserting the flat plate on which the foil-shaped brazing material is formed between the iron and the heat sink, applying heat to the iron and the heat sink, and applying weight to the iron without applying ultrasonic waves to the iron, the foil-shaped brazing material is removed from the flat plate. The method is characterized by comprising the steps of separating and transferring the optical semiconductor element to the die-bonding surface of the heat sink, and die-bonding the optical semiconductor element to the die-bonding surface of the heat sink.
〈作 用〉
上記方法により、箔状ろう材の転写が容易になり、表面
の酸化を防ぐことができると共に、ヒートシンクのダイ
ボンド部のみにろう材を供給することができる。<Function> The above method facilitates the transfer of the foil brazing material, prevents surface oxidation, and allows the brazing material to be supplied only to the die-bonding portion of the heat sink.
〈実施例〉 第１図及び第２図に本発明の一実施例を示す。<Example> An embodiment of the present invention is shown in FIGS. 1 and 2. FIG.
第２図はおいて、１■はＩｎ、Ｓｎ等の箔状ろう材、２
はヒートシンク、３は半導体レーザーなどの光半導体素
子である。箔状ろう材１１は第１図（ｂ）のように、テ
フロンシート４への蒸着により形成される。このろう材
蒸着シートＡは、第１図（ａ）のように、ヒートシンク
２とワイヤーボンダーのキャピラリ一部分のようなコテ
５の間に箔状ろう材１１をヒートシンク２側に向けて挿
入される。In Figure 2, 1■ is a foil brazing material such as In or Sn, 2
3 is a heat sink, and 3 is an optical semiconductor element such as a semiconductor laser. The foil brazing material 11 is formed by vapor deposition on the Teflon sheet 4, as shown in FIG. 1(b). This brazing material vapor-deposited sheet A is inserted between a heat sink 2 and a soldering iron 5, which is a part of a capillary of a wire bonder, with the foil-shaped brazing material 11 facing the heat sink 2 side, as shown in FIG. 1(a).
そして、コテ５及びヒートシンク２（又はステム６）に
熱を加え、さらにコテ５に超音波をかけなからコテ５を
加重することにより、テフロンシート４から箔状ろう材
！ｌを分離して第２図のようにヒートシンク２のダイボ
ンド面に貼り付け、さらにその箔状ろう材１１の上に光
半導体素子３をダイボンドする。なお、ダイボンド用ろ
う材を圧延等で形成すると、Ｉｎではろう材の厚さは約
１００μｍが限度であり、光半導体素子３に半導体レー
ザーを用いた場合、素子厚と等しくなるためダイボンド
用ろう材として適当でない。Then, by applying heat to the iron 5 and the heat sink 2 (or stem 6), and applying weight to the iron 5 without applying ultrasonic waves to the iron 5, a foil-like brazing material is produced from the Teflon sheet 4. 1 is separated and pasted on the die-bonding surface of the heat sink 2 as shown in FIG. Note that when the brazing material for die bonding is formed by rolling or the like, the thickness of the brazing material for In is limited to about 100 μm, and when a semiconductor laser is used for the optical semiconductor element 3, the thickness of the brazing material for die bonding is equal to the element thickness. It is not appropriate as
また、テフロンシート４から箔状ろう材１１を分離する
前に、第３図のように、テフロンシート４を変形させて
おくと、より箔状ろう材１１をはがれやすくできる。Furthermore, if the Teflon sheet 4 is deformed as shown in FIG. 3 before separating the foil-like brazing material 11 from the Teflon sheet 4, the foil-like brazing material 11 can be peeled off more easily.
上記方法により、箔状ろう材■１を蒸着により形成した
ことにより、酸化の少ない表面状態の良好な、厚さ数μ
ｍの均ニな箔状ろう材１１を得ることができ、ダイボン
ド性は良好である。また、ろう材蒸着シー）Ａから箔状
ろう材１１を転写する際に、コテ５及びヒートシンク２
に熱を加えることにより、箔状ろう材１１をテフロンシ
ート４からはがれやすくするとともに、ヒートシンク２
への密着性を良くする。また、コテ５に超音波をかける
ことにより、箔状ろう材１１がよりヒートシンク２に付
きやすくなり、低温で箔状ろう材１１の転写を行うこと
ができ、表面の酸化も防げる。By forming the foil brazing material (1) by vapor deposition using the above method, it has a thickness of several μm with a good surface condition with little oxidation.
It is possible to obtain a foil-like brazing filler metal 11 having a uniform thickness of m, and the die-bonding properties are good. In addition, when transferring the foil brazing material 11 from the brazing material vapor deposition sheet) A, the iron 5 and the heat sink 2
By applying heat to the Teflon sheet 4, the foil brazing material 11 is easily peeled off from the Teflon sheet 4, and the heat sink 2
Improves adhesion to. Moreover, by applying ultrasonic waves to the iron 5, the foil-shaped brazing material 11 can more easily adhere to the heat sink 2, the foil-shaped brazing material 11 can be transferred at a low temperature, and oxidation of the surface can be prevented.
この表面の酸化及び高い熱が加わると箔状ろう材！！が
老化し、光半導体素子３のダイボンドの時に熱を加えて
も箔状ろう材１１が溶けにくくなり、光半導体素子３の
ダイボンドに支障をきたすが、本案ではこれを防げる。When this surface oxidizes and high heat is applied, it becomes a foil-like brazing material! ! aging, the foil brazing filler metal 11 becomes difficult to melt even when heat is applied during die bonding of the optical semiconductor element 3, which impedes die bonding of the optical semiconductor element 3, but this problem can be prevented in the present invention.
さらにダイボンド部のみにろう材を供給できるので、他
の素子を取り付けるなどの他の工程の妨げとならないと
共に、光半導体素子３のサイズ及びダイボンド位置の変
更が容易である。また、箔状ろう材ＩＩと蒸着する平板
として、実施例のように特にテフロンシート４を用いれ
ば、汚染が少なく、はがれやすい箔ができるので好都合
である。Furthermore, since the brazing material can be supplied only to the die-bonding portion, it does not interfere with other processes such as attaching other elements, and the size of the optical semiconductor element 3 and the die-bonding position can be easily changed. Furthermore, it is advantageous to use the Teflon sheet 4 as in the embodiment as the flat plate on which the foil brazing filler metal II is vapor-deposited, since the foil can be easily peeled off with less contamination.
〈発明の効果〉
以上のように本発明によれば、品質の良いろう材を提供
でき、比較的低温で容易に箔状ろう材の転写ができ、表
面の酸化を防ぐことができると共に、光半導体素子のサ
イズ及びダイボンド位置の変更が容易であり、またダイ
ボンド面のみにろう材を供給できるので、工程を簡略化
する有用な光半導体素子のダイボンド方法を提供できる
。<Effects of the Invention> As described above, according to the present invention, a high-quality brazing material can be provided, a foil-shaped brazing material can be easily transferred at a relatively low temperature, the surface can be prevented from oxidation, and it can be Since the size of the semiconductor element and the die-bonding position can be easily changed, and the brazing material can be supplied only to the die-bonding surface, it is possible to provide a useful die-bonding method for optical semiconductor elements that simplifies the process.
第１図は本発明の一実施例を示し、同図（ａ）ｉｄ同分
離中の一工程例を説明する正面図、第１図（ｂ）は同図
償）の要部部品の分離前の構成を示す断面図、第２図は
同全体の断面図、第３図は同分離中の一工程例を説明す
る斜視図、第４図は従来例を示す断面図である。
■１・・・箔状ろう材、２・・・ヒートシンク、３・・
・光半導体素子、４・・・テフロンシート、５・・・コ
テ、Ａ・・・ろう蒸着シート。
代理人 弁理士 福 士 愛 彦（他２名）茶Ｉ 図（
０）
Ｉ
第１ 図Ｃｂ）
ＪＩ２図Fig. 1 shows an embodiment of the present invention, and Fig. 1(a) is a front view illustrating an example of one step during separation, and Fig. 1(b) is a front view of the main parts before separation. 2 is a sectional view of the entire structure, FIG. 3 is a perspective view illustrating an example of one step during separation, and FIG. 4 is a sectional view showing a conventional example. ■1... foil brazing filler metal, 2... heat sink, 3...
- Optical semiconductor element, 4... Teflon sheet, 5... Soldering iron, A... Wax vapor deposition sheet. Agent: Patent Attorney Aihiko Fuku (and 2 others)
0) I Figure 1 Cb) JI Figure 2
Claims (1)
導体素子のダイボンド方法において、平板への蒸着によ
り箔状ろう材を形成する工程、 前記箔状ろう材を形成した平板をコテとヒートシンクの
間に挿入し、コテ及びヒートシンクに熱を加え、さらに
コテには超音波をかけ、加重することにより、平板から
前記箔状ろう材を分離しヒートシンクのダイボンド面に
転写する工程、 ヒートシンクの前記ダイボンド面に光半導体素子をダイ
ボンドする工程、 を有することを特徴とする光半導体素子のダイボンド方
法。 ２、前記平板として、テフロンシートを用いたことを特
徴とする特許請求の範囲第１項記載の光半導体素子のダ
イボンド方法。[Scope of Claims] 1. In a die-bonding method for optical semiconductor devices in which an optical semiconductor device is die-bonded to a heat sink, a step of forming a foil-like brazing material by vapor deposition on a flat plate; A step of separating the foil brazing material from the flat plate and transferring it to the die-bonding surface of the heat sink by inserting it between the heat sinks, applying heat to the iron and the heat sink, applying ultrasonic waves to the iron, and applying weight. A die-bonding method for an optical semiconductor device, comprising the step of die-bonding an optical semiconductor device to the die-bonding surface. 2. The die-bonding method for optical semiconductor devices according to claim 1, wherein a Teflon sheet is used as the flat plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28624185A JPS62143496A (en) | 1985-12-17 | 1985-12-17 | Die bonding method for photosemiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28624185A JPS62143496A (en) | 1985-12-17 | 1985-12-17 | Die bonding method for photosemiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62143496A true JPS62143496A (en) | 1987-06-26 |
Family
ID=17701806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28624185A Pending JPS62143496A (en) | 1985-12-17 | 1985-12-17 | Die bonding method for photosemiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62143496A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03230552A (en) * | 1990-02-05 | 1991-10-14 | Matsushita Electric Ind Co Ltd | Joint material for packaging semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4980568A (en) * | 1972-12-08 | 1974-08-03 | ||
| JPS53144695A (en) * | 1977-05-23 | 1978-12-16 | Mitsubishi Electric Corp | Semiconductor laser device |
-
1985
- 1985-12-17 JP JP28624185A patent/JPS62143496A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4980568A (en) * | 1972-12-08 | 1974-08-03 | ||
| JPS53144695A (en) * | 1977-05-23 | 1978-12-16 | Mitsubishi Electric Corp | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03230552A (en) * | 1990-02-05 | 1991-10-14 | Matsushita Electric Ind Co Ltd | Joint material for packaging semiconductor device |
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