JP2575996Y2 - Pad for wire bonding - Google Patents
Pad for wire bondingInfo
- Publication number
- JP2575996Y2 JP2575996Y2 JP1992080515U JP8051592U JP2575996Y2 JP 2575996 Y2 JP2575996 Y2 JP 2575996Y2 JP 1992080515 U JP1992080515 U JP 1992080515U JP 8051592 U JP8051592 U JP 8051592U JP 2575996 Y2 JP2575996 Y2 JP 2575996Y2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- heat
- wire bonding
- aluminum substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本考案はハイブリッドＩＣ等の製
作において使用されるワイヤボンディング用パッドに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding pad used in manufacturing a hybrid IC or the like.
【０００２】[0002]
【従来の技術】ハイブリッドＩＣ等の高密度の表面実装
において、金のリボン線等をボンディングする方式の一
つとして、ボンディング用キャピラリーより熱をパルス
状に印加して熱圧着により接続するボンディング方式が
ある。このような方式を用いて、アルミ基板などの非常
に放熱性（熱伝導性）の良い基板上に設けられたボンデ
ィングパッド部にワイヤボンディングをしようとする
と、図３の概念図に示すように、ボンディング用キャピ
ラリー７より加えられる熱がアルミ基板等１のボンディ
ング部から周囲へ急速に放散してしまい、ボンディング
部分の温度が十分に上昇しないために、ワイヤボンディ
ングが出来なかったり、出来たとしてもボンデイング強
度が弱く実用化が出来なかった。2. Description of the Related Art In a high-density surface mounting of a hybrid IC or the like, as one of methods for bonding a gold ribbon wire or the like, a bonding method in which heat is applied in a pulse form from a bonding capillary and connected by thermocompression bonding. is there. By using such a method, when wire bonding is to be performed on a bonding pad portion provided on a substrate having very good heat dissipation (thermal conductivity) such as an aluminum substrate, as shown in the conceptual diagram of FIG. The heat applied from the bonding capillary 7 is rapidly dissipated from the bonding portion of the aluminum substrate 1 to the surroundings, and the temperature of the bonding portion does not rise sufficiently. The strength was weak and could not be put to practical use.
【０００３】[0003]
【考案が解決しようとする課題】本考案はこのような点
に鑑みなされたもので、ボンディング用キャピラリーよ
り加えられる熱がアルミ基板等のボンディングパッド部
から周囲に放散する速度が遅く、そのためワイヤボンデ
ィングが可能となり、ボンディング強度が十分に実用に
供されるワイヤボンディング用パッドを提供するもので
ある。SUMMARY OF THE INVENTION The present invention has been made in view of such a point, and the speed at which heat applied from a bonding capillary dissipates from a bonding pad portion such as an aluminum substrate to the surroundings is low. The present invention provides a wire bonding pad with sufficient bonding strength and practical use.
【０００４】[0004]
【課題を解決するための手段】本考案は上述の課題を解
決するため、アルミ基板などの放熱性（熱伝導性）の良
い基板上に設けられ、ワイヤーをボンディングキャピラ
リーにより熱をパルス状に印加して熱圧着によりボンデ
ィングするものにおいて、比較的導電性に優れ、アルミ
基板等と比較して熱伝導性の劣る部材からなり、その上
面に金メッキ処理がを施され、上記アルミ基板等の上に
半田付けにより搭載されていることを特徴とする。In order to solve the above-mentioned problems, the present invention is provided on a substrate having good heat dissipation (thermal conductivity) such as an aluminum substrate, and applies heat in a pulsed manner to a wire by using a bonding capillary. In the case of bonding by thermocompression bonding, it is made of a member that is relatively excellent in conductivity and inferior in thermal conductivity as compared to aluminum substrate etc., and its upper surface is plated with gold, It is characterized by being mounted by soldering.
【０００５】[0005]
【作用】以上のように構成したので、本考案によるワイ
ヤボンディング用パッドにおいては、比較的導電性に優
れ、アルミ等と比較して熱伝導性の劣る部材に金メッキ
処理を施したものを、アルミ基板等のボンディングパッ
ト部に半田付けにより搭載されることにより、搭載する
部材そのものの熱伝導性が悪いことと、搭載する部材を
介してアルミ基板等に熱が伝達されるため熱の放散速度
が遅く、ボンディングキャピラリーの接触部の温度を高
く保つことができるため、ワイヤーボンディングが可能
となる。With the above construction, the wire bonding pad according to the present invention is obtained by applying a gold-plated material to a member having relatively excellent conductivity and inferior heat conductivity as compared with aluminum or the like. By being mounted on the bonding pad part of the board by soldering, the heat conductivity of the mounting member itself is poor, and the heat is transferred to the aluminum substrate etc. through the mounting member, so the heat dissipation speed is reduced. Since the temperature of the contact portion of the bonding capillary can be kept high lately, wire bonding can be performed.
【０００６】[0006]
【実施例】以下、図面に基づいて本考案による実施例を
詳細に説明する。図１は本考案によるワイヤボンディン
グ用パッドの一実施例の要部断面図であり、図２は本考
案によるワイヤボンディング用パッドにおけるボンディ
ング時の熱の伝達状況を現す概念図である。図におい
て、１はアルミ基板等で、このアルミ基板等１上のボン
ディングパッド部８に、比較的導電性に優れ、アルミ等
と比較して熱導電性の劣る薄板の部材３（例えば４２ア
ロイ合金或いはコバール合金等）に下地処理としてニッ
ケルメッキ層５を形成し、その上にワイヤーボンディン
グ用ソフト金メッキ層５を形成した薄板の部材３が半田
付け２されており、このワイヤーボンディング用パッド
に金リボン線などのワイヤー４がボンディンされてい
る。ワイヤボンディング用パッドを作製するには、まず
部材３（例えば４２アロイの薄板等）に下地処理として
ニッケルメッキを施し、その上にワイヤボンディング用
ソフト金メッキ処理を施した後、このメッキ処理を行っ
た薄い部材３をボンディングパット部８の形状（例え
ば、３ｍｍ×３ｍｍ）に切断する。一方アルミ基板１の
ボンディングパッド部８のアルミ箔の層をエッチングに
より取り除いて銅箔部分を露出させてから、半田印刷処
理を行った後、このボンディングパッド部８に前記の切
断した薄い部材３を搭載し、また、他の実装部品７も所
要の場所に搭載して、リフローにより半田付け２を行っ
て、洗浄・乾燥する。ワイヤボンディングを行うには、
前記メッキ処理を行った薄い部材３にボンディングキャ
ピラリー９より熱をパルス状に印加して、熱圧着により
金リボン線などワイヤー４のボンディングを行う。な
お、本考案により、比較的導電性に優れ、アルミ等と比
較して熱伝導性の劣る部材に金メッキ処理を施したもの
を、ボンディングパット部８に半田付けにより搭載され
るため、搭載する部材３そのものの熱伝導性が悪いこと
と、搭載する部材３を介してアルミ基板等１に熱が伝達
されるため熱の放散速度が遅く、ボンディングキャピラ
リー９の接触部の温度を高く保ことができ、ワイヤーボ
ンディングが可能となる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described below in detail with reference to the drawings. FIG. 1 is a cross-sectional view of a main part of an embodiment of a wire bonding pad according to the present invention, and FIG. 2 is a conceptual diagram showing a state of heat transfer during bonding in the wire bonding pad according to the present invention. In the figure, reference numeral 1 denotes an aluminum substrate or the like, and a thin plate member 3 (for example, a 42 alloy alloy) having relatively excellent conductivity and inferior thermal conductivity as compared to aluminum or the like is provided on a bonding pad portion 8 on the aluminum substrate 1 or the like. Alternatively, a thin plate member 3 having a nickel plating layer 5 formed thereon as a base treatment and a soft gold plating layer 5 for wire bonding formed thereon is soldered 2, and a gold ribbon is attached to the wire bonding pad. A wire 4 such as a wire is bonded. In order to produce a wire bonding pad, first, the member 3 (for example, a 42-alloy thin plate) was plated with nickel as a base treatment, and then soft gold plating for wire bonding was performed thereon, followed by plating. The thin member 3 is cut into the shape of the bonding pad portion 8 (for example, 3 mm × 3 mm). On the other hand, after the aluminum foil layer of the bonding pad portion 8 of the aluminum substrate 1 is removed by etching to expose the copper foil portion, a solder printing process is performed, and the cut thin member 3 is placed on the bonding pad portion 8. It is mounted, and the other mounting parts 7 are also mounted at required places, soldering 2 is performed by reflow, and washing and drying are performed. To perform wire bonding,
Heat is applied in a pulse form from the bonding capillary 9 to the thin member 3 that has been subjected to the plating process, and the wire 4 such as a gold ribbon wire is bonded by thermocompression bonding. In addition, according to the present invention, a member having relatively excellent conductivity and inferior thermal conductivity as compared with aluminum or the like, which is subjected to gold plating, is mounted on the bonding pad portion 8 by soldering. Since the heat conductivity of the bonding capillary 3 itself is low and the heat is transmitted to the aluminum substrate 1 via the mounting member 3, the heat dissipation speed is low, and the temperature of the contact portion of the bonding capillary 9 can be kept high. And wire bonding becomes possible.
【０００７】[0007]
【考案の効果】以上に説明したように、本考案によるワ
イヤボンディング用パッドにおいては、比較的導電性に
優れ、アルミ等と比較して熱伝導性の劣る部材に金メッ
キ処理を施したものを、ボンディングパット部に半田付
けにより搭載するため、搭載する部材そのものの熱伝導
性が悪いことと、搭載する部材を介してアルミ基板等に
熱が放散されるため熱の放散速度が遅く、ボンディング
キャピラリーの接触部の温度を高く保っことができ、ワ
イヤーボンディングが可能となるため、従来ワイヤボン
ディングが出来なかった放熱性の良い基板にもボンディ
ングが可能となった。なお、この考案による製作工程に
は新しいプロセスがなく、従来のプロセスの組み合わせ
で製作が可能である。As described above, in the pad for wire bonding according to the present invention, a material obtained by performing a gold plating process on a member having relatively excellent conductivity and inferior in heat conductivity as compared with aluminum or the like, Since it is mounted on the bonding pad part by soldering, the heat conductivity of the mounting member itself is poor, and the heat is dissipated to the aluminum substrate etc. through the mounting member, so the heat dissipation speed is slow, and the bonding capillary Since the temperature of the contact portion can be kept high and wire bonding can be performed, bonding can be performed even on a substrate having good heat dissipation, which has not been able to perform wire bonding conventionally. It should be noted that there is no new process in the manufacturing process according to the present invention, and it is possible to manufacture by combining conventional processes.
【図１】本考案によるワイヤボンディング用パッドの一
実施例の要部断面図である。FIG. 1 is a sectional view of a main part of an embodiment of a wire bonding pad according to the present invention.
【図２】本考案によるワイヤボンディング用パッドにお
けるボンディング時の熱の伝達状況を現す概念図であ
る。FIG. 2 is a conceptual diagram illustrating a state of heat transfer during bonding in a wire bonding pad according to the present invention.
【図３】従来のワイヤボンディング用パッドにおけるボ
ンディング時の熱の伝達状況を現す概念図である。FIG. 3 is a conceptual diagram showing a state of heat transfer during bonding in a conventional wire bonding pad.
１ アルミ基板等 ２ 半田付け ３ 部材（例えば、４２アロイ薄板など） ４ ワイヤー ５ 下地のニッケルメッキ層 ６ 金メッキ層 ７ 他の実装部品 ８ ボンディングパッド部 ９ ボンディングキャピラリー DESCRIPTION OF SYMBOLS 1 Aluminum board etc. 2 Soldering 3 Member (for example, 42 alloy thin plate) 4 Wire 5 Underlying nickel plating layer 6 Gold plating layer 7 Other mounting parts 8 Bonding pad part 9 Bonding capillary
Claims (1)
良い基板上に設けられ、ワイヤーをボンディングキャピ
ラリーにより熱をパルス状に印加して熱圧着によりボン
ディングするものにおいて、比較的導電性に優れ、アル
ミ基板等と比較して熱伝導性の劣る部材からなり、その
上面に金メッキ処理がを施され、上記アルミ基板等の上
に半田付けにより搭載されていることを特徴とするワイ
ヤボンディング用パッド。1. A method in which a wire is provided on a substrate having good heat dissipation (thermal conductivity) such as an aluminum substrate, and heat is applied in a pulsed manner by a bonding capillary to bond wires by thermocompression bonding. It is made of a member that is excellent in heat conductivity and is inferior in heat conductivity to an aluminum substrate, etc., and its upper surface is gold-plated and mounted on the above aluminum substrate etc. by soldering. pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992080515U JP2575996Y2 (en) | 1992-11-20 | 1992-11-20 | Pad for wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992080515U JP2575996Y2 (en) | 1992-11-20 | 1992-11-20 | Pad for wire bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0645340U JPH0645340U (en) | 1994-06-14 |
| JP2575996Y2 true JP2575996Y2 (en) | 1998-07-02 |
Family
ID=13720458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1992080515U Expired - Fee Related JP2575996Y2 (en) | 1992-11-20 | 1992-11-20 | Pad for wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2575996Y2 (en) |
-
1992
- 1992-11-20 JP JP1992080515U patent/JP2575996Y2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0645340U (en) | 1994-06-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |