JPH02267261A - Production of target for sputtering - Google Patents
Production of target for sputteringInfo
- Publication number
- JPH02267261A JPH02267261A JP8768489A JP8768489A JPH02267261A JP H02267261 A JPH02267261 A JP H02267261A JP 8768489 A JP8768489 A JP 8768489A JP 8768489 A JP8768489 A JP 8768489A JP H02267261 A JPH02267261 A JP H02267261A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- metal layer
- sputtering
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000004544 sputter deposition Methods 0.000 title abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 9
- 230000008018 melting Effects 0.000 claims abstract description 9
- 238000005477 sputtering target Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 19
- 229910045601 alloy Inorganic materials 0.000 abstract description 7
- 239000000956 alloy Substances 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 5
- 229910052759 nickel Inorganic materials 0.000 abstract description 5
- 229910052804 chromium Inorganic materials 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 4
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 229910052745 lead Inorganic materials 0.000 abstract description 2
- 229910052718 tin Inorganic materials 0.000 abstract description 2
- 229910052725 zinc Inorganic materials 0.000 abstract description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- 238000009736 wetting Methods 0.000 abstract 1
- 238000005266 casting Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
（従来の技術）
スパッタリング法は、真空容器中でＡｒなどのガスを減
圧して放電を起し、ここで生成したＡｒイオンを陰極（
ターゲット）に向って加速衝突させる。ターゲットはＡ
ｒイオンのエネルギーをもらい、その表面はスパッタさ
れ、被スパツタ粒子は対向する電極上の基板−Ｆに堆積
し薄膜を形成する。Detailed Description of the Invention (Industrial Application Field) (Prior Art) In the sputtering method, a gas such as Ar is depressurized in a vacuum container to cause a discharge, and the Ar ions generated here are transferred to the cathode (
accelerate and collide toward the target). Target is A
The surface is sputtered by the energy of r ions, and the sputtered particles are deposited on the substrate -F on the opposing electrode to form a thin film.
一般的に、このスパッタリング法で用いられるターゲッ
トはボンディング材でバッキングプレートと接合して使
用される。Generally, the target used in this sputtering method is bonded to a backing plate using a bonding material.
この場合、バッキングプレートは多くは純銅あるいは銅
系合金、まれにはステンレス等が使用され、ボンディン
グ材はインジウムのような低融点金属、半田のような合
金、樹脂等が使用される。In this case, the backing plate is often made of pure copper or a copper-based alloy, rarely stainless steel, and the bonding material is a low melting point metal such as indium, an alloy such as solder, resin, etc.
しかし、ターゲットが化学記号で３ｉ、３ｎ。However, the targets are chemical symbols 3i and 3n.
Ｉｎ、Ｐｂ、Ｚｎあるいはこれらの金属を含む合金のよ
うに低融点である場合、メタル系ボンディング材を使用
するとターゲットはボンディング材に食われてしまいバ
ッキングプレートへの接合が不可能である。If a metal bonding material is used, such as In, Pb, Zn, or an alloy containing these metals, which has a low melting point, the target will be eaten by the bonding material and cannot be bonded to the backing plate.
このような場合は樹脂系ボンディング材を使用してター
ゲラ１−とバッキングプレートを接合する方法が一般的
であるが、スパッタリングの方式によっては樹脂系ボン
ディング材が使用できない場合がある。In such cases, it is common to use a resin bonding material to bond the target layer 1- and the backing plate, but depending on the sputtering method, the resin bonding material may not be usable.
（解決しようとする問題点）
本発明は、上記のような場合、ボンディング材を使用せ
ずにターゲットとバッキングプレートを接合する新規な
スパッタリングターゲットの￥Ａｊ告方法を提供しよう
とするものである。(Problems to be Solved) The present invention aims to provide a novel method for bonding a sputtering target in which a target and a backing plate are bonded without using a bonding material in the above-mentioned case.
（問題を解決するための手段）
本発明は、バッキングプレート上に金属層をコーティン
グし、その上に低融点のターゲットを接合するスパッタ
リングターゲットの製造方法である。したがって、本発
明によれば、ボンディング材を必要としない。(Means for Solving the Problems) The present invention is a method for manufacturing a sputtering target in which a metal layer is coated on a backing plate and a low melting point target is bonded thereon. Therefore, according to the present invention, no bonding material is required.
ターゲットとバッキングプレートを接合する方法は、コ
ーティングされた金属層の上に所定寸法の鋳込みのため
の枠材を乗せ溶融したターゲツト材を鋳込む方法、コー
ティングされた金属層の上に低融点のターゲットを乗せ
バッキングプレートを加熱してバッキングプレートとの
ターゲットの接触面を溶解して接合する方法等がある。The target and backing plate are joined together by placing a casting frame material of a predetermined size on top of the coated metal layer and casting the molten target material, or by placing a low melting point target on top of the coated metal layer. There is a method of bonding by heating the backing plate and melting the contact surface of the target with the backing plate.
しかし、バッキングプレートが銅あるいは銅合金である
場合、上記の鋳込方法あるいは溶解接合方法で接合する
とバッキングプレート材がターゲット内部に拡散しター
ゲットが汚染される欠点がある。However, when the backing plate is made of copper or a copper alloy, there is a drawback that if the backing plate material is bonded by the above-mentioned casting method or melting method, the backing plate material will diffuse into the target and the target will be contaminated.
また、バッキングプレー１〜がステンレスの場合ターグ
ツ［〜とのぬれ性がよくないため接合が困難である欠点
がある。Further, when the backing plate 1 is made of stainless steel, there is a drawback that bonding is difficult because the wettability with the targstone is poor.
バッキングプレート上に金属層をコーティングし、その
上にターゲットを接合する理由は、バッキングプレート
材からの拡散汚染を防止するためおよびターグツ１〜と
のぬれ性のよい金属層をコーティングすることによって
ターゲットとの接合力を向上せしめるためである。The reason why a metal layer is coated on the backing plate and the target is bonded thereon is to prevent diffusion contamination from the backing plate material and to bond the target with a metal layer that has good wettability with the target. This is to improve the bonding force of.
コーティングする金属層はニッケル、クロムあるいはこ
れらの金属を含む合金が好ましい。The metal layer to be coated is preferably nickel, chromium, or an alloy containing these metals.
コーティングする方法は、メツキ法、蒸着法、スパッタ
リング法等を用いることができるが、コート膜は種類の
異なる金属の多層膜であってもよい。As a coating method, a plating method, a vapor deposition method, a sputtering method, etc. can be used, but the coating film may be a multilayer film of different types of metals.
一般的にバッキングプレートはその上に接合されたター
ゲットを使い終ったのらは、その使い残りのターゲット
をバッキングプレートから剥離し、さらに新しいターゲ
ットを接合して使用するのが普通であるが、本発明にな
る鋳込方法のスパッタリングターゲットはスパッタによ
って減った部分に同質ターゲツト材を鋳込方法で継ぎ足
すだけでよく、使い終ったターゲットを剥離する必要は
ない。このためスパッタリングターゲットの製造工程を
著しく短縮することができると同時に、ターゲツト材の
無駄を省くことができる。Generally, when a backing plate has finished using a target bonded on it, the unused target is peeled off from the backing plate and a new target is bonded for use. With the sputtering target of the casting method according to the invention, it is only necessary to add homogeneous target material to the part reduced by sputtering by the casting method, and there is no need to peel off the used target. Therefore, the manufacturing process of the sputtering target can be significantly shortened, and at the same time, waste of target material can be avoided.
しかし、鋳込方法で用いる枠材もターゲット内部に拡散
されない材料を選択する必要がある。However, the frame material used in the casting method also needs to be selected from a material that does not diffuse into the target.
（実施例１）
寸法１４７ｍｍｘ５２８ｍｍ厚さ２０ｍｍ（７）無酸素
銅のバッキングプレートの表面にメツキ法で厚さ２０μ
のニッケルを着膜した。(Example 1) Dimensions: 147 mm x 528 mm, thickness: 20 mm (7) The surface of the oxygen-free copper backing plate was plated to a thickness of 20 μm.
A film of nickel was deposited.
そのメツキ膜上に寸法１２７ｍｍｘ５０８ｍｍ厚さ５ｍ
ｍのＩ ｎ−３ｎ （９０： １０ｗｔ％）合金のター
ゲットを乗せ、バッキングプレート表面を２００℃に加
熱してターゲットを接合した。On the plating film, the dimensions are 127mm x 508mm and the thickness is 5m.
A target of In-3n (90:10 wt%) alloy of m was placed on the backing plate, and the surface of the backing plate was heated to 200°C to bond the target.
その結果、［ｎ−３ｎ合金ターゲットとバッキングプレ
ートとの接合性は極めて良好であることがわかった。As a result, it was found that the bondability between the n-3n alloy target and the backing plate was extremely good.
また、該ターゲットをＩＣＰ発光分析法を用いて分析し
た結果１、ターゲット内部に銅およびニッケルの拡散は
全く認められないことがわかった。Furthermore, as a result of analyzing the target using ICP emission spectrometry, it was found that no diffusion of copper and nickel was observed inside the target.
（実施例２）
寸法１４７ｍｍｘ５２８ｍｍ厚さ２０ｍｍの無酸素銅の
バッキングプレートの表面に蒸着法で厚さ３μのニッケ
ル、厚さ３μのクロム、厚さ３μのスズの三層を着膜し
た。(Example 2) Three layers of nickel with a thickness of 3μ, chromium with a thickness of 3μ and tin with a thickness of 3μ were deposited on the surface of an oxygen-free copper backing plate with dimensions of 147 mm x 528 mm and thickness of 20 mm by vapor deposition.
その蒸着膜上に寸法１２７ｍｍｘ５０８ｍｍ厚さ５ｍｍ
の鋳込み枠を乗せ、溶融した３ｎを流し込んで鋳込んだ
。そののち鋳込み枠を取り外して鋳込方法によるＳｎの
スパッタリングターゲットを作成した。Dimensions: 127mm x 508mm, thickness: 5mm
A casting frame was placed on the mold, and molten 3N was poured into the mold. Thereafter, the casting flask was removed and a Sn sputtering target was created using the casting method.
その結果、３ｎターゲツトとバッキングプレートとの接
合性は極めて良好であることがわかったまた、該ターゲ
ットをＩＣＰ発光分析法を用いて分析した結果、ターゲ
ット内部に銅、ニツウ゛ルおよびクロムの拡散は全く認
められないことがわかった。As a result, it was found that the bonding properties between the 3n target and the backing plate were extremely good.Also, as a result of analyzing the target using ICP emission spectrometry, no diffusion of copper, nitrogen, and chromium was observed inside the target. I found out that I can't do it.
（発明の効果）
本発明によれば、メタル系ボンディング材を用いてはバ
ッキングプレートに接合困難な低融点ターゲットをボン
ディング材を用いないで極めてよく接合できる特徴があ
る。(Effects of the Invention) According to the present invention, a low melting point target, which is difficult to bond to a backing plate using a metal bonding material, can be bonded extremely well without using a bonding material.
また、金属層をバッキングプレートにコーティングする
ことによって、バッキングプレートからの汚染を防止し
たり、ターゲットとのぬれ性の向上により接合性が極め
てよくなる特徴がある。Furthermore, by coating the backing plate with a metal layer, contamination from the backing plate can be prevented, and bondability can be extremely improved due to improved wettability with the target.
近年、スパッタリング法に用いるスパッタリング装置は
益々大型化し、これにともなってスパッタリングターゲ
ットも大型化が要求されているが、本発明は、どのよう
な大型のターゲットにも適用できるためターゲットの大
型化に対応できる利点がある。In recent years, sputtering equipment used in sputtering methods has become increasingly larger, and along with this, sputtering targets are also required to be larger.The present invention can be applied to any large target, so it can cope with larger targets. There are advantages that can be achieved.
Claims (1)
ターゲットを接合することを特徴とするスパッタリング
ターゲットの製造方法。A method for manufacturing a sputtering target, comprising providing a metal layer on a backing plate and bonding a low melting point target thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8768489A JPH02267261A (en) | 1989-04-06 | 1989-04-06 | Production of target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8768489A JPH02267261A (en) | 1989-04-06 | 1989-04-06 | Production of target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02267261A true JPH02267261A (en) | 1990-11-01 |
Family
ID=13921757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8768489A Pending JPH02267261A (en) | 1989-04-06 | 1989-04-06 | Production of target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02267261A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6039855A (en) * | 1995-09-27 | 2000-03-21 | Leybold Materials Gmbh | Target for the sputtering cathode of a vacuum coating apparatus and method for its manufacture |
| EP1186682A3 (en) * | 2000-09-05 | 2003-11-26 | W.C. Heraeus GmbH & Co. KG | Cylindrical sputtering target and process for its manufacture |
| WO2012029356A1 (en) * | 2010-08-31 | 2012-03-08 | Jx日鉱日石金属株式会社 | Laminated structure and method for producing same |
| JP2012184469A (en) * | 2011-03-04 | 2012-09-27 | Mitsubishi Materials Corp | METHOD FOR PRODUCING In SPUTTERING TARGET |
| JP5175976B2 (en) * | 2009-11-20 | 2013-04-03 | Ｊｘ日鉱日石金属株式会社 | Sputtering target-backing plate assembly and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687663A (en) * | 1979-12-17 | 1981-07-16 | Nec Kagoshima Ltd | Thin film forming method |
| JPS61227166A (en) * | 1985-03-29 | 1986-10-09 | Mitsubishi Metal Corp | Bismuth or bismuth-containing target for sputtering |
| JPS6340860A (en) * | 1986-08-06 | 1988-02-22 | Toshiba Corp | Analytical result output apparatus |
| JPS6344820A (en) * | 1986-08-11 | 1988-02-25 | 萩原工業株式会社 | Protective sheet for directly protecting plant |
-
1989
- 1989-04-06 JP JP8768489A patent/JPH02267261A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687663A (en) * | 1979-12-17 | 1981-07-16 | Nec Kagoshima Ltd | Thin film forming method |
| JPS61227166A (en) * | 1985-03-29 | 1986-10-09 | Mitsubishi Metal Corp | Bismuth or bismuth-containing target for sputtering |
| JPS6340860A (en) * | 1986-08-06 | 1988-02-22 | Toshiba Corp | Analytical result output apparatus |
| JPS6344820A (en) * | 1986-08-11 | 1988-02-25 | 萩原工業株式会社 | Protective sheet for directly protecting plant |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6039855A (en) * | 1995-09-27 | 2000-03-21 | Leybold Materials Gmbh | Target for the sputtering cathode of a vacuum coating apparatus and method for its manufacture |
| EP1186682A3 (en) * | 2000-09-05 | 2003-11-26 | W.C. Heraeus GmbH & Co. KG | Cylindrical sputtering target and process for its manufacture |
| JP5175976B2 (en) * | 2009-11-20 | 2013-04-03 | Ｊｘ日鉱日石金属株式会社 | Sputtering target-backing plate assembly and manufacturing method thereof |
| US9062371B2 (en) | 2009-11-20 | 2015-06-23 | Jx Nippon Mining & Metals Corporation | Sputtering target-backing plate assembly, and its production method |
| WO2012029356A1 (en) * | 2010-08-31 | 2012-03-08 | Jx日鉱日石金属株式会社 | Laminated structure and method for producing same |
| JP2012052174A (en) * | 2010-08-31 | 2012-03-15 | Jx Nippon Mining & Metals Corp | Laminated structure and method for production thereof |
| CN102510911A (en) * | 2010-08-31 | 2012-06-20 | Jx日矿日石金属株式会社 | Laminated structure and method for producing same |
| JP2012184469A (en) * | 2011-03-04 | 2012-09-27 | Mitsubishi Materials Corp | METHOD FOR PRODUCING In SPUTTERING TARGET |
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