JPS57141942A - Formation of bump electrode - Google Patents

Formation of bump electrode

Info

Publication number
JPS57141942A
JPS57141942A JP56027765A JP2776581A JPS57141942A JP S57141942 A JPS57141942 A JP S57141942A JP 56027765 A JP56027765 A JP 56027765A JP 2776581 A JP2776581 A JP 2776581A JP S57141942 A JPS57141942 A JP S57141942A
Authority
JP
Japan
Prior art keywords
layer
bump electrode
metal
alloy
solidly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56027765A
Other languages
Japanese (ja)
Inventor
Misao Saga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Co Ltd
Original Assignee
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUJI DENKI SOUGOU KENKYUSHO KK, Fuji Electric Corporate Research and Development Ltd filed Critical FUJI DENKI SOUGOU KENKYUSHO KK
Priority to JP56027765A priority Critical patent/JPS57141942A/en
Publication of JPS57141942A publication Critical patent/JPS57141942A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Abstract

PURPOSE:To increase the adhesive strength between metal layers and to obtain a solidly fabricated bump electrode by a method wherein a multilayered base metal layer of the bump electrode is formed through the intermediary of the evaporated alloy layer of both composition metal which is located close to each metal layer. CONSTITUTION:In the process wherein an Sn-Pb solder bump electrode 8, for example, is formed on the Al layer 3 provided on a substrate 1 through the intermediary of an oxide film 2, a Ti layer 5, a Cu layer 6, and an Ni layer 7 are ordinarily formed by lamination as base metals. In order to form these multilayered base metal layer, Ti, Ti-Cu alloy, Cu, Cu-Ni alloy and Ni are successively evaporated in the above order using a two-gun type electron beam evaporating device, for example, and a thin alloy layer (approximately 1,000Angstrom or below) is interposed between each metal. Accordingly, each constituent metal is strongly adhered each other, and the exfoliation of interface and the like can be prevented, thereby enabling to form the solidly fabricated bump electrode 8.
JP56027765A 1981-02-27 1981-02-27 Formation of bump electrode Pending JPS57141942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56027765A JPS57141942A (en) 1981-02-27 1981-02-27 Formation of bump electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56027765A JPS57141942A (en) 1981-02-27 1981-02-27 Formation of bump electrode

Publications (1)

Publication Number Publication Date
JPS57141942A true JPS57141942A (en) 1982-09-02

Family

ID=12230085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56027765A Pending JPS57141942A (en) 1981-02-27 1981-02-27 Formation of bump electrode

Country Status (1)

Country Link
JP (1) JPS57141942A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068082A (en) * 1973-10-12 1975-06-07
JPS52155972A (en) * 1976-06-21 1977-12-24 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068082A (en) * 1973-10-12 1975-06-07
JPS52155972A (en) * 1976-06-21 1977-12-24 Matsushita Electric Ind Co Ltd Production of semiconductor device

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