JPS6126268A - Heat-resistant amorphous silicon solar cell and manufacture thereof - Google Patents

Heat-resistant amorphous silicon solar cell and manufacture thereof

Info

Publication number
JPS6126268A
JPS6126268A JP14841184A JP14841184A JPS6126268A JP S6126268 A JPS6126268 A JP S6126268A JP 14841184 A JP14841184 A JP 14841184A JP 14841184 A JP14841184 A JP 14841184A JP S6126268 A JPS6126268 A JP S6126268A
Authority
JP
Japan
Prior art keywords
semiconductor
back electrode
thickness
layer
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14841184A
Inventor
Yoshihisa Owada
Jun Takada
Yoshinori Yamaguchi
Original Assignee
Kanegafuchi Chem Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chem Ind Co Ltd filed Critical Kanegafuchi Chem Ind Co Ltd
Priority to JP14841184A priority Critical patent/JPS6126268A/en
Priority claimed from AU43651/85A external-priority patent/AU576594B2/en
Publication of JPS6126268A publication Critical patent/JPS6126268A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/548Amorphous silicon PV cells

Abstract

PURPOSE:To prevent the decrease in characteristic due to the diffusion of the back electrode into the semiconductor by a method wherein a Cr layer of suitable thickness is provided between the semiconductor and the back electrode. CONSTITUTION:A Cr layer having a thickness of 10-1,000Angstrom preferably 30- 300Angstrom is provided between the semiconductor and the back electrode. The thickness of this Cr layer of less than 10Angstrom can not yield layers of uniform and good quality or can not sufficiently prevent the thermal diffusion of the metal forming the back electrode into the semiconductor. Besides, the layer thickness in excess of 1,000Angstrom increases the series electric resistance in the presence of this layer, decreases the light reflectance, and gives a lot of time in formation of Cr layers. The solar cell thus manufactured can be properly used in the case of use at a high temperature of e.g. 50 deg.C or more.
JP14841184A 1984-07-16 1984-07-16 Heat-resistant amorphous silicon solar cell and manufacture thereof Pending JPS6126268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14841184A JPS6126268A (en) 1984-07-16 1984-07-16 Heat-resistant amorphous silicon solar cell and manufacture thereof

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP14841184A JPS6126268A (en) 1984-07-16 1984-07-16 Heat-resistant amorphous silicon solar cell and manufacture thereof
AU43651/85A AU576594B2 (en) 1984-06-15 1985-06-13 Heat-resistant thin film photoelectric converter
CA000483934A CA1270931A (en) 1984-06-15 1985-06-13 Heat-resistant thin film photoelectric converter with diffusion blocking layer
KR8504216A KR910005761B1 (en) 1984-06-15 1985-06-14 Heat-resistant thin film photo electric converter and its manufacturing method
DE19853581561 DE3581561D1 (en) 1984-06-15 1985-06-14 Waermebestaendiger photoelectric thin film converter.
EP19850107371 EP0165570B1 (en) 1984-06-15 1985-06-14 Heat-resistant thin film photoelectric converter
US06/942,644 US4765845A (en) 1984-06-15 1986-12-17 Heat-resistant thin film photoelectric converter

Publications (1)

Publication Number Publication Date
JPS6126268A true JPS6126268A (en) 1986-02-05

Family

ID=15452186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14841184A Pending JPS6126268A (en) 1984-07-16 1984-07-16 Heat-resistant amorphous silicon solar cell and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6126268A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144885A (en) * 1984-12-18 1986-07-02 Kanegafuchi Chem Ind Co Ltd Heatproof, thin film optoelectric transducer and production thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103370A (en) * 1980-12-19 1982-06-26 Agency Of Ind Science & Technol Amorphous semiconductor solar cell
JPS5858777A (en) * 1981-10-05 1983-04-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor element
JPS6015980A (en) * 1983-07-08 1985-01-26 Agency Of Ind Science & Technol Solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103370A (en) * 1980-12-19 1982-06-26 Agency Of Ind Science & Technol Amorphous semiconductor solar cell
JPS5858777A (en) * 1981-10-05 1983-04-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor element
JPS6015980A (en) * 1983-07-08 1985-01-26 Agency Of Ind Science & Technol Solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144885A (en) * 1984-12-18 1986-07-02 Kanegafuchi Chem Ind Co Ltd Heatproof, thin film optoelectric transducer and production thereof

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