JPS54158188A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54158188A JPS54158188A JP6704478A JP6704478A JPS54158188A JP S54158188 A JPS54158188 A JP S54158188A JP 6704478 A JP6704478 A JP 6704478A JP 6704478 A JP6704478 A JP 6704478A JP S54158188 A JPS54158188 A JP S54158188A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- burning
- conducting paste
- substrate side
- layer side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To enable formation of the ohmic electrode by coating the Ni film to the substrate side of the semiconductor device of the solar battery or the like and thus burning simultaneously both the diffusion layer side and the substrate side at a low temperature, and thus to simplify the manufacturing process.
CONSTITUTION: Ni film 3 is coated to the substrate side of the semiconductor device of the solar battery or the like comprising n-type Si substrate 1 and p+-diffusion layer 2, and then the conducting paste mainly composed of Ag and Au is printed to the diffusion layer side. Then the paste featuring the same burning temperature as the conducting paste of the diffusion layer side, such as the conducting paste mainly composed of Ag and featuring the burning temperatures of 550∼ 650°C, is applied to film 3. And then the conducting paste for both the diffusion layer side and the substrate side are burnt simultaneously to form electrode 4 and 5. Thus, the burning becomes possible near 600°C which is lower than the conducting paste composed mainly of Ag, which needs hitherto the burning temperature of more than 800°C to Si. As a result, the electrode featuring a low-contact resistance can be obtained with no penetration to the diffusion layer. Furthermore, the manufacturing process can be simplified since both the substrate side and the diffusion layer side can be burnt at one time.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6704478A JPS54158188A (en) | 1978-06-02 | 1978-06-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6704478A JPS54158188A (en) | 1978-06-02 | 1978-06-02 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54158188A true JPS54158188A (en) | 1979-12-13 |
Family
ID=13333445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6704478A Pending JPS54158188A (en) | 1978-06-02 | 1978-06-02 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54158188A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01307277A (en) * | 1988-06-04 | 1989-12-12 | Nippon Mining Co Ltd | Manufacture of solar cell |
-
1978
- 1978-06-02 JP JP6704478A patent/JPS54158188A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01307277A (en) * | 1988-06-04 | 1989-12-12 | Nippon Mining Co Ltd | Manufacture of solar cell |
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