JPS54158187A - Electrode material for semiconductor device - Google Patents

Electrode material for semiconductor device

Info

Publication number
JPS54158187A
JPS54158187A JP6704378A JP6704378A JPS54158187A JP S54158187 A JPS54158187 A JP S54158187A JP 6704378 A JP6704378 A JP 6704378A JP 6704378 A JP6704378 A JP 6704378A JP S54158187 A JPS54158187 A JP S54158187A
Authority
JP
Japan
Prior art keywords
powder
gold
silver
diffusion layer
plus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6704378A
Other languages
Japanese (ja)
Other versions
JPS6159549B2 (en
Inventor
Manabu Yoshida
Jun Fukuchi
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6704378A priority Critical patent/JPS54158187A/en
Priority to AU38236/78A priority patent/AU509758B2/en
Priority to DE19782833214 priority patent/DE2833214C2/en
Publication of JPS54158187A publication Critical patent/JPS54158187A/en
Publication of JPS6159549B2 publication Critical patent/JPS6159549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: To eliminate use of a high temperature of over 800°C for burning as well as to avoid occurrence of penetration through the diffusion layer by forming the solid component of the conducting paste with the metal impalpable powder of silver and gold plus the glass powder containing no lead-group glass.
CONSTITUTION: The solid component of the conductive paste is composed of the metal impalpable powder of silver and gold plus the glass powder containing no lead-group glass powder such as zinc oxide, boron oxide, silica and the like. Furthermore, the organic binding agent such as ethyl cellulose, cellusolve or the like plus the organic solvent are added in a proper amount in order to facilitate the coating to the substrate to which the electrode is formed via the printing or other methods, and thus the viscous conducting paste is obtained after the sufficient mixing and stirring. If the gold powder exists into the silver powder, the gold has the alloy reaction in preference to Si even at a comparatively low burning temperature. Thus, a contact of a low-contact resistance can be obtained to Si even at 800°C or less. Also, the electrode never penetrates through the diffusion layer even in case the diffusion layer is shallow by selecting the proper conditions.
COPYRIGHT: (C)1979,JPO&Japio
JP6704378A 1977-07-29 1978-06-02 Electrode material for semiconductor device Granted JPS54158187A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6704378A JPS54158187A (en) 1978-06-02 1978-06-02 Electrode material for semiconductor device
AU38236/78A AU509758B2 (en) 1977-07-29 1978-07-21 Ohmic electrode to semiconductor device
DE19782833214 DE2833214C2 (en) 1977-07-29 1978-07-28 Process for producing an electrode intended for a solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6704378A JPS54158187A (en) 1978-06-02 1978-06-02 Electrode material for semiconductor device

Publications (2)

Publication Number Publication Date
JPS54158187A true JPS54158187A (en) 1979-12-13
JPS6159549B2 JPS6159549B2 (en) 1986-12-17

Family

ID=13333416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6704378A Granted JPS54158187A (en) 1977-07-29 1978-06-02 Electrode material for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54158187A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117276A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of solar battery

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117276A (en) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp Manufacture of solar battery
JPS6311791B2 (en) * 1982-12-24 1988-03-16 Mitsubishi Electric Corp

Also Published As

Publication number Publication date
JPS6159549B2 (en) 1986-12-17

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