JPS6311791B2 - - Google Patents
Info
- Publication number
- JPS6311791B2 JPS6311791B2 JP57231682A JP23168282A JPS6311791B2 JP S6311791 B2 JPS6311791 B2 JP S6311791B2 JP 57231682 A JP57231682 A JP 57231682A JP 23168282 A JP23168282 A JP 23168282A JP S6311791 B2 JPS6311791 B2 JP S6311791B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- receiving surface
- solar cell
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000005476 soldering Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、太陽電池を製造する方法に関し、
特にその電圧・電流特性を向上させた太陽電池の
製造方法に関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for manufacturing a solar cell,
In particular, the present invention relates to a method of manufacturing a solar cell with improved voltage and current characteristics.
従来の太陽電池の製造方法としてシリコン単結
晶太陽電池の場合を例にとつて説明すると、従来
では、半導体基板としてのｐ形単結晶シリコン基
板の表面にｎ形不純物を浅く拡散してｎ形拡散層
を形成して受光面とし、この受光面側にグリツド
電極をAg（銀）ペーストをスクリーン印刷して形
成させる。ついで、前記シリコン基板の底面には
その全面に主電極としてAg―Al（銀・アルミニ
ウム）ペーストを同様にスクリーン印刷した後、
外部端子の半田付けを容易にするため、さらに前
記Ag―Alペースト上にAgペーストを外部端子の
半田付け部にスクリーン印刷する。しかる後、こ
れらペーストを含むシリコン基板を大気中、600
〜700℃の温度で焼成することにより、それぞれ
の電極を形成する方法がとられている。なお、前
記受光面には、一般に電極形成後に光反射防止膜
が形成されている。
Taking the case of a silicon single crystal solar cell as an example of a conventional solar cell manufacturing method, conventional methods involve shallowly diffusing n-type impurities into the surface of a p-type single-crystal silicon substrate as a semiconductor substrate to achieve n-type diffusion. A layer is formed to form a light-receiving surface, and a grid electrode is formed on this light-receiving surface by screen printing Ag (silver) paste. Next, Ag-Al (silver/aluminum) paste was similarly screen printed on the entire bottom surface of the silicon substrate as the main electrode, and then
In order to facilitate soldering of the external terminals, Ag paste is further screen printed on the Ag--Al paste onto the soldered portions of the external terminals. After that, the silicon substrate containing these pastes was exposed to air for 600 min.
A method is used in which each electrode is formed by firing at a temperature of ~700°C. Note that an antireflection film is generally formed on the light-receiving surface after forming the electrodes.
しかしながら、このようにして製造された従来
の太陽電池では、各電極を大気中で焼成して形成
しているために、グリツド電極とｎ形拡散層との
オーミツク性が著しく低下し、その結果、電圧・
電流特性や光変換効率が悪くなるという欠点があ
つた。 However, in conventional solar cells manufactured in this way, each electrode is formed by firing in the atmosphere, so the ohmic properties between the grid electrode and the n-type diffusion layer are significantly reduced, and as a result, Voltage·
The disadvantage was that current characteristics and light conversion efficiency deteriorated.
この発明は以上の点に鑑みてなされたもので、
その目的は、半導体基板上にpn接合を形成する
導電層とグリツド電極とのオーミツク性を良好に
して、電圧・電流特性および光変換効率を大幅に
向上させた太陽電池の製造方法を提供することに
ある。
This invention was made in view of the above points,
The purpose is to provide a method for manufacturing solar cells that improves the ohmic properties between the conductive layer that forms a pn junction on a semiconductor substrate and the grid electrode, and significantly improves voltage/current characteristics and light conversion efficiency. It is in.
このような目的を達成するために、この発明は
半導体基板上に該基板とは異なる導電層を浅く形
成して受光面の近くにpn接合を形成し、前記導
電層の受光面側にビスマス（Bi）を含有する銀
ペーストを、前記半導体基板の受光面と反対側の
面に導体ペーストを用いて大気中で焼成してそれ
ぞれグリツド電極および主電極を形成した後、こ
れら電極を水素雰囲気もしくは窒素と水素の混合
ガス雰囲気中で加熱して還元することを特徴とす
るものである。 In order to achieve such an object, the present invention shallowly forms a conductive layer different from the substrate on a semiconductor substrate to form a pn junction near the light-receiving surface, and bismuth ( A conductive paste containing Bi) is baked in the atmosphere on the surface opposite to the light-receiving surface of the semiconductor substrate to form a grid electrode and a main electrode, respectively. It is characterized by heating and reducing in a mixed gas atmosphere of hydrogen and hydrogen.
以下、この発明の実施例を図に基いて詳細に説
明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図はこの発明に係る製造方法の一実施例を
説明するための太陽電池の構造を示す要部断面図
であり、シリコン単結晶太陽電池に適用した場合
を示す。第１図において、１はｐ形単結晶シリコ
ン基板、２はこの基板１の一方の主面上にｎ形不
純物を浅く拡散して形成されたｎ形拡散層であつ
て、受光面を形成している。また３はこの受光面
よりマイナス電位を取り出すグリツド電極、４は
前記シリコン基板１の他方の主面上に設けられて
プラス電位を取り出す主電極としての裏面電極、
５は同じくプラス電位を取り出すための外部端子
半田付け用電極である。なお、６は受光面側に施
された光反射防止膜である。 FIG. 1 is a sectional view of a main part showing the structure of a solar cell for explaining one embodiment of the manufacturing method according to the present invention, and shows a case where the method is applied to a silicon single crystal solar cell. In FIG. 1, 1 is a p-type single crystal silicon substrate, and 2 is an n-type diffusion layer formed by shallowly diffusing n-type impurities on one main surface of this substrate 1, which forms a light-receiving surface. ing. Further, 3 is a grid electrode for extracting a negative potential from this light-receiving surface; 4 is a back electrode as a main electrode provided on the other main surface of the silicon substrate 1 for extracting a positive potential;
Reference numeral 5 designates an external terminal soldering electrode for extracting a positive potential. Note that 6 is an anti-reflection film provided on the light-receiving surface side.
ここで、かかる構成の太陽電池を製造する場合
について具体的に説明する。まず、500μm程度の
厚さのｐ形単結晶シリコン基板１の表面に0.3〜
0.5μm程度のｎ形拡散層２を形成して受光面と
し、この受光面側に300μm程度の幅のグリツド電
極３を３〜５mm間隔のもとに、Agペースト（エ
ンゲルハート製、A4162）をスクリーン印刷して
形成させる。ついで前記シリコン基板１の裏面の
全面に裏面電極４としてAg―Alペーストを同様
にスクリーン印刷する。しかる後、外部端子の半
田付けを容易にするため、さらにAg―Alペース
ト上にAgペーストを外部端子半田付け用電極５
としてスクリーン印刷する。次いで、このように
印刷されたAg，Ag―Alペーストを含む基板を大
気中、600〜700℃の温度で５〜15分程度焼成し、
これによつてグリツド電極３、裏面電極４および
電極５を形成して太陽電池素子を形成する。しか
る後、各電極が形成された太陽電池素子を、水素
雰囲気もしくは窒素と水素の混合ガス雰囲気中に
て350〜500℃の温度で５分程度加熱（シンター）
し、この熱処理後、受光面にTiO2，Ta2O5など
を被着して光反射防止膜６を形成することによ
り、図示する構造のシリコン単結晶太陽電池を作
成した。 Here, a case in which a solar cell having such a configuration is manufactured will be specifically described. First, 0.3~
An n-type diffusion layer 2 of about 0.5 μm is formed as a light-receiving surface, and on this light-receiving surface side, grid electrodes 3 of about 300 μm wide are placed at intervals of 3 to 5 mm, and Ag paste (manufactured by Engelhardt, A4162) is applied. Form by screen printing. Then, Ag--Al paste is similarly screen printed on the entire back surface of the silicon substrate 1 as a back electrode 4. After that, in order to facilitate soldering of external terminals, Ag paste was further applied on the Ag-Al paste to form external terminal soldering electrodes 5.
Screen print as . Next, the substrate containing the Ag, Ag-Al paste printed in this way is fired in the air at a temperature of 600 to 700°C for about 5 to 15 minutes.
As a result, grid electrode 3, back surface electrode 4, and electrode 5 are formed to form a solar cell element. After that, the solar cell element with each electrode formed thereon is heated (sintered) at a temperature of 350 to 500°C for about 5 minutes in a hydrogen atmosphere or a mixed gas atmosphere of nitrogen and hydrogen.
After this heat treatment, TiO 2 , Ta 2 O 5 or the like was deposited on the light-receiving surface to form an anti-reflection film 6, thereby producing a silicon single crystal solar cell having the structure shown in the figure.
第２図はこのようにして製造された本発明の太
陽電池と従来例との電圧・電流特性を示し、受光
面にAMI相当の光照射時および光照射しない暗
時の電圧・電流特性をそれぞれ示している。ここ
で、横軸は電圧（Ｖ）が、縦軸は電流（Ｉ）がそ
れぞれとつてあり、（Voc）は開放電圧を、（Ioc）
は短絡電流を示している。すなわち、曲線１０
ａ，１０ｂは従来例における暗時、光照射時での
電圧・電流特性、曲線１１ａ，１１ｂは本発明の
一実施例における暗時、光照射時での電圧・電流
特性である。 Figure 2 shows the voltage and current characteristics of the solar cell of the present invention manufactured in this way and the conventional example, and shows the voltage and current characteristics when the light receiving surface is irradiated with light equivalent to AMI and in the dark when no light is irradiated. It shows. Here, the horizontal axis is the voltage (V), the vertical axis is the current (I), (Voc) is the open circuit voltage, and (Ioc)
indicates the short circuit current. That is, curve 10
Curves a and 10b are voltage and current characteristics in the dark and during light irradiation in the conventional example, and curves 11a and 11b are voltage and current characteristics in the dark and during light irradiation in an embodiment of the present invention.
この第２図から明らかなように、グリツド電
極、主電極にそれぞれAg，Ag―Alペーストを用
い大気中で焼成して各電極を形成した従来の太陽
電池ではその電圧・電流特性１０ａ，１０ｂがな
だらかな曲線を有していた。これに対して、上記
実施例の如く、同様のAg，Ag―Alペーストを用
いて大気中で焼成して各グリツド電極、主電極を
形成した後、これら電極をさらに水素雰囲気もし
くは窒素と水素の混合ガス雰囲気中で350〜500℃
の温度で焼成することによつて、上記ｎ形拡散層
２とグリツド電極３との界面が還元されそのオー
ミツク性が著しく良好となり、シヤープな電圧・
電流特性１１ａおよび１１ｂが得られた。その結
果、従来のものに比べて電圧・電流特性および光
変換効率を大幅に改善することができた。 As is clear from Fig. 2, the voltage and current characteristics 10a and 10b of the conventional solar cell, in which the grid electrode and the main electrode are made of Ag and Ag-Al pastes, respectively, and each electrode is formed by firing in the atmosphere, are It had a gentle curve. On the other hand, as in the above example, after each grid electrode and the main electrode are formed by firing in the air using the same Ag, Ag-Al paste, these electrodes are further heated in a hydrogen atmosphere or in a nitrogen and hydrogen atmosphere. 350~500℃ in mixed gas atmosphere
By firing at a temperature of
Current characteristics 11a and 11b were obtained. As a result, we were able to significantly improve voltage/current characteristics and light conversion efficiency compared to conventional products.
なお、上述した実施例では各グリツド電極、外
部端子半田付け用電極の材料を、エンゲルハード
製A4162としたが、昭栄化学製Agペースト
H4155，H516でもよい。本発明者の実験結果で
は、エンゲルハード製A4162を使用した場合、外
部電極端子の半田付け工程で接着強度が余り強く
ない傾向を示し、他方照栄化学製H4155，H5168
の両者とも接着強度は水素還元雰囲気中で加熱し
ても接着強度の低下はほとんどみられなかつた。
そのため、各メーカのAgペーストの分析からBi
（ビスマス）の含有が接着強度に影響を与えてい
ることを見出し、この結果からBiのAgペースト
中への含有量（wt％）を0.5〜10％にすることに
よつて、上記実施例の効果に加えてさらに良好な
接着強度が得られた。また、シリコン基板の受光
面と反対側に形成される主電極の材料は、Ag―
Alペーストに限らずそれ以外の導体ペーストを
用いることもできる。 In the above-mentioned example, the material of each grid electrode and external terminal soldering electrode was Engelhard's A4162, but Shoei Kagaku's Ag paste was used.
H4155 or H516 may also be used. The inventor's experimental results show that when A4162 manufactured by Engelhard is used, the adhesive strength tends to be not very strong in the soldering process of external electrode terminals, while H4155 and H5162 manufactured by Teruei Chemical Co., Ltd.
In both cases, there was almost no decrease in adhesive strength even when heated in a hydrogen reducing atmosphere.
Therefore, from the analysis of each manufacturer's Ag paste, Bi
It was found that the content of (bismuth) affected the adhesive strength, and based on this result, by adjusting the content (wt%) of Bi in the Ag paste to 0.5 to 10%, the above example In addition to this effect, even better adhesive strength was obtained. In addition, the material of the main electrode formed on the side opposite to the light-receiving surface of the silicon substrate is Ag-
Not only Al paste but also other conductor pastes can be used.
さらに、上記実施例ではシリコン単結晶太陽電
池について示したが、シリコン多結晶太陽電池、
アモルフアス太陽電池、GaAs太陽電池などの他
の太陽電池に適用しても同様の効果が得られる。 Furthermore, although silicon single crystal solar cells were shown in the above embodiments, silicon polycrystalline solar cells,
Similar effects can be obtained when applied to other solar cells such as amorphous solar cells and GaAs solar cells.
以上詳述したように、この発明の方法によれ
ば、pn接合を有する半導体基板の受光面にBcを
含有するAgペーストを、その受光面と反対側の
面に導体ペーストをそれぞれ用いて大気中で焼成
してグリツド電極および主電極を形成した後、さ
らにこれら電極を水素雰囲気または窒素と水素の
混合ガス雰囲気中で加熱処理することにより、前
記半導体基板上のpn接合を形成する拡散層とAg
ペーストとの界面が還元されてそのオーミツク性
が良好となり、したがつて、電圧・電流特性、光
変換効率を向上し得るとともに、併せて製造歩留
りの向上ならびに原価低減化をはかるなどの効果
がある。
As detailed above, according to the method of the present invention, an Ag paste containing Bc is applied to the light-receiving surface of a semiconductor substrate having a p-n junction, and a conductive paste is used to the surface opposite to the light-receiving surface. After firing to form a grid electrode and a main electrode, these electrodes are further heat-treated in a hydrogen atmosphere or a mixed gas atmosphere of nitrogen and hydrogen to form a diffusion layer forming a pn junction on the semiconductor substrate and Ag.
The interface with the paste is reduced and its ohmic properties are improved, which improves voltage/current characteristics and light conversion efficiency, and also has the effect of improving manufacturing yield and reducing costs. .
第１図はこの発明に係る製造方法の一実施例を
説明するための太陽電池の構造を示す要部断面
図、第２図は上記実施例により得られた太陽電池
と従来例とを比較して示す電圧・電流特性図であ
る。
１……ｐ形単結晶シリコン基板、２……ｎ形拡
散層、３……グリツド電極、４……裏面電極（主
電極）、５……外部端子半田付け用電極、６……
光反射防止膜。
FIG. 1 is a cross-sectional view of a main part showing the structure of a solar cell for explaining one embodiment of the manufacturing method according to the present invention, and FIG. 2 is a comparison between the solar cell obtained by the above embodiment and a conventional example. It is a voltage/current characteristic diagram shown in FIG. DESCRIPTION OF SYMBOLS 1...P-type single crystal silicon substrate, 2...N-type diffusion layer, 3...Grid electrode, 4...Back surface electrode (main electrode), 5...External terminal soldering electrode, 6...
Anti-reflection film.
Claims (1)
く形成して受光面の近くにpn接合を形成する工
程と、前記導電層の受光面側にビスマスを含有す
る銀ペーストを、前記半導体基板の受光面と反対
側の面に導体ペーストを用いて大気中で焼成して
それぞれグリツド電極および主電極を形成する工
程と、この工程後、前記グリツド電極および主電
極を水素雰囲気もしくは窒素と水素の混合ガス雰
囲気中で加熱して還元する工程とを備えたことを
特徴とする太陽電池の製造方法。 ２ グリツド電極として含有量0.5〜10のビスマ
スを含有した銀ペーストを用いることを特徴とす
る特許請求の範囲第１項記載の太陽電池の製造方
法。[Claims] 1. A step of shallowly forming a conductive layer different from the substrate on a semiconductor substrate to form a pn junction near the light-receiving surface, and a silver paste containing bismuth on the light-receiving surface side of the conductive layer. A conductive paste is used on the surface opposite to the light-receiving surface of the semiconductor substrate and baked in the atmosphere to form a grid electrode and a main electrode, respectively. After this step, the grid electrode and main electrode are placed in a hydrogen atmosphere. Alternatively, a method for manufacturing a solar cell characterized by comprising a step of heating and reducing in a mixed gas atmosphere of nitrogen and hydrogen. 2. The method for manufacturing a solar cell according to claim 1, characterized in that a silver paste containing 0.5 to 10 bismuth is used as the grid electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57231682A JPS59117276A (en) | 1982-12-24 | 1982-12-24 | Manufacture of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57231682A JPS59117276A (en) | 1982-12-24 | 1982-12-24 | Manufacture of solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59117276A JPS59117276A (en) | 1984-07-06 |
| JPS6311791B2 true JPS6311791B2 (en) | 1988-03-16 |
Family
ID=16927335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57231682A Granted JPS59117276A (en) | 1982-12-24 | 1982-12-24 | Manufacture of solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59117276A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| JP2008204967A (en) * | 2005-05-31 | 2008-09-04 | Naoetsu Electronics Co Ltd | Solar cell element and method for fabricating the same |
| JP5376752B2 (en) * | 2006-04-21 | 2013-12-25 | 信越半導体株式会社 | Solar cell manufacturing method and solar cell |
| US8940572B2 (en) | 2009-04-21 | 2015-01-27 | Tetrasun, Inc. | Method for forming structures in a solar cell |
| JP2020520114A (en) * | 2017-05-10 | 2020-07-02 | 日立化成株式会社 | Multi-layer metal film stack for roofing silicon solar array |
| CN109888029B (en) * | 2019-03-22 | 2022-04-12 | 韩华新能源（启东）有限公司 | Sintering method for improving aluminum cavity of PERC battery |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52129293A (en) * | 1976-04-23 | 1977-10-29 | Agency Of Ind Science & Technol | Electrode of semiconductror device and its formation |
| JPS54158187A (en) * | 1978-06-02 | 1979-12-13 | Matsushita Electric Ind Co Ltd | Electrode material for semiconductor device |
-
1982
- 1982-12-24 JP JP57231682A patent/JPS59117276A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52129293A (en) * | 1976-04-23 | 1977-10-29 | Agency Of Ind Science & Technol | Electrode of semiconductror device and its formation |
| JPS54158187A (en) * | 1978-06-02 | 1979-12-13 | Matsushita Electric Ind Co Ltd | Electrode material for semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59117276A (en) | 1984-07-06 |
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