JPH02177569A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPH02177569A
JPH02177569A JP63334675A JP33467588A JPH02177569A JP H02177569 A JPH02177569 A JP H02177569A JP 63334675 A JP63334675 A JP 63334675A JP 33467588 A JP33467588 A JP 33467588A JP H02177569 A JPH02177569 A JP H02177569A
Authority
JP
Japan
Prior art keywords
formed
substrate
conductivity type
part
plane electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63334675A
Inventor
Takayuki Minamimori
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63334675A priority Critical patent/JPH02177569A/en
Publication of JPH02177569A publication Critical patent/JPH02177569A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/547Monocrystalline silicon PV cells

Abstract

PURPOSE: To simplify a manufacturing process of a solar cell of this design by a method wherein a paste-like disperser is printed on a part of a substrate where a photodetective plane electrode is formed, and a deep first diffusion layer formed of a second conductivity type impurity is provided.
CONSTITUTION: A paste-like diffusion agent 10 containing impurity of a second conductivity type opposite to that of a semiconductor substrate 1 is printed on a part of the semiconductor substrate 1 where a photodetective plane electrode 5 is formed, the substrate 1 is thermally treated to enable the second conductivity type to diffuse into the surface of the substrate 1, and a first diffusion layer 8 formed of a second conductivity type impurity is formed on the primary face of the substrate 1 located just under a part where the photodetective plane electrode 5 is formed. By this setup, a process can be simplified.
COPYRIGHT: (C)1990,JPO&Japio
JP63334675A 1988-12-28 1988-12-28 Manufacture of solar cell Pending JPH02177569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63334675A JPH02177569A (en) 1988-12-28 1988-12-28 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63334675A JPH02177569A (en) 1988-12-28 1988-12-28 Manufacture of solar cell

Publications (1)

Publication Number Publication Date
JPH02177569A true JPH02177569A (en) 1990-07-10

Family

ID=18279989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63334675A Pending JPH02177569A (en) 1988-12-28 1988-12-28 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPH02177569A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078665A (en) * 2006-09-22 2008-04-03 Commiss Energ Atom Method for producing doped region in substrate, and photovoltaic cell
WO2009037955A1 (en) * 2007-09-19 2009-03-26 Sharp Kabushiki Kaisha Method for manufacturing solar cell
KR100989322B1 (en) * 2009-02-05 2010-10-25 에스에스씨피 주식회사 Manufacturing Method of Solar Cell's Substrate Having Selective Emitter Structure And Solar Cell
JP2010534927A (en) * 2007-07-26 2010-11-11 ウニベルジテーツ コンスタンツ Silicon solar cell having emitter with back-etching and method of forming similar solar cell
JP2011124486A (en) * 2009-12-14 2011-06-23 Sharp Corp Method of manufacturing solar cell, and solar cell
JP2012231013A (en) * 2011-04-26 2012-11-22 Hitachi Chem Co Ltd N-type diffusion layer forming composition, method for manufacturing n-type diffusion layer, and method for manufacturing solar cell element
JP2012231012A (en) * 2011-04-26 2012-11-22 Hitachi Chem Co Ltd P-type diffusion layer forming composition, method for manufacturing p-type diffusion layer, and method for manufacturing solar cell element
JP2012234990A (en) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd P-type diffusion layer formation composition, manufacturing method for the same, and manufacturing method for solar battery element
JP2012234989A (en) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd N-type diffusion layer formation composition, manufacturing method for the same, and manufacturing method for solar battery element
JP2014099660A (en) * 2010-04-23 2014-05-29 Hitachi Chemical Co Ltd Composition for forming p-type diffusion layer, process of manufacturing p-type diffusion layer, and process of manufacturing solar cell element
JP2014146813A (en) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd P-type diffusion layer formation composition, manufacturing method of p-type diffusion layer, and manufacturing method of solar cell element
JP2014146811A (en) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd N-type diffusion layer formation composition, manufacturing method of n-type diffusion layer, and manufacturing method of solar cell element
JP2014146808A (en) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd N-type diffusion layer formation composition, manufacturing method of n-type diffusion layer, and manufacturing method of solar cell element
JP2014150261A (en) * 2010-04-23 2014-08-21 Hitachi Chemical Co Ltd p-TYPE DIFFUSION LAYER FORMATION COMPOSITION, p-TYPE DIFFUSION LAYER MANUFACTURING METHOD AND SOLAR CELL ELEMENT MANUFACTURING METHOD
JP2014170939A (en) * 2010-04-23 2014-09-18 Hitachi Chemical Co Ltd N-type diffusion layer-forming composition, method for manufacturing n-type diffusion layer, and method for manufacturing solar battery element
JP2016006893A (en) * 2015-08-03 2016-01-14 日立化成株式会社 n-TYPE DIFFUSION LAYER FORMATION COMPOSITION, n-TYPE DIFFUSION LAYER MANUFACTURING METHOD AND SOLAR CELL ELEMENT MANUFACTURING METHOD
JP2016021589A (en) * 2015-09-14 2016-02-04 日立化成株式会社 P-type diffusion layer forming composition, method for manufacturing p-type diffusion layer, and method for manufacturing solar cell element

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078665A (en) * 2006-09-22 2008-04-03 Commiss Energ Atom Method for producing doped region in substrate, and photovoltaic cell
US8586396B2 (en) 2007-07-26 2013-11-19 Universität Konstanz Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell
JP2010534927A (en) * 2007-07-26 2010-11-11 ウニベルジテーツ コンスタンツ Silicon solar cell having emitter with back-etching and method of forming similar solar cell
EP2171762B1 (en) * 2007-07-26 2014-06-25 Universität Konstanz Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell
JP2013080954A (en) * 2007-07-26 2013-05-02 Universitat Konstanz Method for forming silicon solar cell having emitter subject to back etching and similar solar cell
WO2009037955A1 (en) * 2007-09-19 2009-03-26 Sharp Kabushiki Kaisha Method for manufacturing solar cell
KR100989322B1 (en) * 2009-02-05 2010-10-25 에스에스씨피 주식회사 Manufacturing Method of Solar Cell's Substrate Having Selective Emitter Structure And Solar Cell
JP2011124486A (en) * 2009-12-14 2011-06-23 Sharp Corp Method of manufacturing solar cell, and solar cell
JP2014146808A (en) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd N-type diffusion layer formation composition, manufacturing method of n-type diffusion layer, and manufacturing method of solar cell element
JP2014150261A (en) * 2010-04-23 2014-08-21 Hitachi Chemical Co Ltd p-TYPE DIFFUSION LAYER FORMATION COMPOSITION, p-TYPE DIFFUSION LAYER MANUFACTURING METHOD AND SOLAR CELL ELEMENT MANUFACTURING METHOD
JP2014170939A (en) * 2010-04-23 2014-09-18 Hitachi Chemical Co Ltd N-type diffusion layer-forming composition, method for manufacturing n-type diffusion layer, and method for manufacturing solar battery element
CN104916531A (en) * 2010-04-23 2015-09-16 日立化成工业株式会社 Composition that forms n-type diffusion layer, method for producing n-type diffusion layer, and method for producing solar cell element
US9520529B2 (en) 2010-04-23 2016-12-13 Hitachi Chemical Co., Ltd. Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of producing photovoltaic cell
JP2014146813A (en) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd P-type diffusion layer formation composition, manufacturing method of p-type diffusion layer, and manufacturing method of solar cell element
JP2014146811A (en) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd N-type diffusion layer formation composition, manufacturing method of n-type diffusion layer, and manufacturing method of solar cell element
JP2014099660A (en) * 2010-04-23 2014-05-29 Hitachi Chemical Co Ltd Composition for forming p-type diffusion layer, process of manufacturing p-type diffusion layer, and process of manufacturing solar cell element
US9608143B2 (en) 2010-04-23 2017-03-28 Hitachi Chemical Co., Ltd. Composition for forming N-type diffusion layer, method of forming N-type diffusion layer, and method of producing photovoltaic cell
JP2012231012A (en) * 2011-04-26 2012-11-22 Hitachi Chem Co Ltd P-type diffusion layer forming composition, method for manufacturing p-type diffusion layer, and method for manufacturing solar cell element
JP2012231013A (en) * 2011-04-26 2012-11-22 Hitachi Chem Co Ltd N-type diffusion layer forming composition, method for manufacturing n-type diffusion layer, and method for manufacturing solar cell element
JP2012234990A (en) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd P-type diffusion layer formation composition, manufacturing method for the same, and manufacturing method for solar battery element
JP2012234989A (en) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd N-type diffusion layer formation composition, manufacturing method for the same, and manufacturing method for solar battery element
JP2016006893A (en) * 2015-08-03 2016-01-14 日立化成株式会社 n-TYPE DIFFUSION LAYER FORMATION COMPOSITION, n-TYPE DIFFUSION LAYER MANUFACTURING METHOD AND SOLAR CELL ELEMENT MANUFACTURING METHOD
JP2016021589A (en) * 2015-09-14 2016-02-04 日立化成株式会社 P-type diffusion layer forming composition, method for manufacturing p-type diffusion layer, and method for manufacturing solar cell element

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