CN109888029B - Sintering method for improving aluminum cavity of PERC battery - Google Patents
Sintering method for improving aluminum cavity of PERC battery Download PDFInfo
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- CN109888029B CN109888029B CN201910220229.9A CN201910220229A CN109888029B CN 109888029 B CN109888029 B CN 109888029B CN 201910220229 A CN201910220229 A CN 201910220229A CN 109888029 B CN109888029 B CN 109888029B
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Abstract
The invention discloses a sintering method for improving the aluminum cavity of a PERC battery, which comprises the following steps: and (3) feeding the silicon wafer printed with the slurry into sintering equipment for sintering, wherein the sintering temperature of the front side of the silicon wafer is set to be lower than the sintering temperature set on the back side of the silicon wafer. According to the sintering method for improving the aluminum cavity of the PERC battery, the front surface and the back surface of the silicon wafer are subjected to non-isothermal sintering through the thermocouple temperature control, the common aluminum cavity of the PERC is solved, the aluminum-silicon contact is improved, the LBSF thickness is increased, and the passivation effect is improved. The preparation method solves and improves the problems of small aluminum cavity and LBSF thickness and poor quality caused by the traditional PERC sintering, and further improves the battery efficiency of the PERC without the aluminum cavity.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a sintering method for improving an aluminum cavity of a PERC cell.
Background
Solar photovoltaic power generation has become a new industry which is concerned and developed intensively worldwide due to the characteristics of cleanness, safety, convenience, high efficiency and the like. Therefore, in recent years, the production of the crystalline silicon solar cell is rapidly developed, and the demand of the crystalline silicon solar cell in photovoltaic power stations and distributed applications is also very large.
As photovoltaic technology continues to evolve over time, the balanced optimization of passivation and contact results in a continuous increase in photovoltaic cell efficiency. In order to reduce the recombination rate of the back of the silicon wafer and reduce minority carrier recombination, the P-type surface aluminum back surface BSF reduces the recombination rate of the aluminum-silicon surface Srear to be 300-100 cm/s through the passivation film AlOx. LBSF passivation also requires local Al-Si contact in a grooving area through aluminum-silicon diffusion, and aluminum voiding can occur in conventional sintering without temperature difference between the upper surface and the lower surface of the sintered body and under the Kirkendall (Kirkendall) effect. Aluminum voids can cause high resistance increase and poor LBSF layer, resulting in degradation of Al-Si contact performance and passivation effect of LBSF, resulting in degradation of cell efficiency loss.
Disclosure of Invention
In view of the above, in order to overcome the defects of the prior art, the present invention aims to provide a sintering method for improving aluminum voids of a PERC battery, and a silicon wafer obtained by the sintering method can effectively solve the problem of aluminum voids, improve aluminum-silicon contact performance, increase the thickness of LBSF, improve passivation effect, and improve battery efficiency.
In order to achieve the purpose, the invention adopts the following technical scheme:
a sintering method for improving aluminum voiding of a PERC cell, the sintering method comprising the steps of: and (3) feeding the silicon wafer printed with the slurry into sintering equipment for sintering, wherein the sintering temperature of the front side of the silicon wafer is set to be lower than the sintering temperature set on the back side of the silicon wafer.
According to some preferred aspects of the invention, the sintering equipment comprises a low-temperature drying area and a high-temperature sintering area, and the low-temperature drying area and the high-temperature sintering area respectively comprise a plurality of temperature control areas with different set temperatures.
Preferably, the high-temperature sintering area comprises an upper temperature control area corresponding to the front surface of the silicon wafer and a lower temperature control area corresponding to the back surface of the silicon wafer, and the set temperature of the lower temperature control area is 15-40 ℃ higher or lower than the set temperature of the upper temperature control area.
More preferably, the set temperature of the lower temperature control region is 15 to 20 ℃ higher or lower than the set temperature of the upper temperature control region.
Preferably, the upper temperature control region and the lower temperature control region respectively comprise six temperature control regions corresponding to each other, and the temperature control region in each lower temperature control region is 15-40 ℃ higher or lower than the set temperature of the temperature control region in the corresponding upper temperature control region.
Preferably, the temperature of the low-temperature drying zone is 300-450 ℃, and the temperature of the high-temperature sintering zone is 500-960 ℃.
More preferably, the low temperature baking zone has the same set temperature corresponding to the front surface and the back surface of the silicon wafer.
Preferably, the low-temperature drying area comprises four temperature control areas, and the temperature control areas gradually rise along the set temperature of the feeding direction of the silicon wafers.
According to some preferred aspects of the present invention, the silicon wafer on which the paste has been printed is prepared by: according to the battery technology, an original silicon wafer is subjected to primary cleaning and texturing, a passivation and anti-reflection film is plated on the back side, and an anti-reflection film is plated on the front side, then back side grooving is carried out through laser equipment, and back silver back aluminum front silver paste printing is carried out on the grooved silicon wafer in screen printing equipment, so that the silicon wafer printed with the paste is obtained.
The invention relates to a sintering method for improving the aluminum cavity of a PERC battery, which specifically comprises the following steps:
(1) the method comprises the steps of (1) cleaning and texturing an original silicon wafer from one time to plating a passivation and anti-reflection film on the back side and an anti-reflection film on the front side according to a battery process, then grooving on the back side through laser equipment, and selecting corresponding power to perform grooving on different patterns (Dot/Dash/Line and the like) according to the requirements of a PERC process;
(2) carrying out back silver back aluminum front silver paste printing on the slotted silicon wafer in screen printing equipment, feeding the printed silicon wafer into sintering equipment (Despatch), namely a sintering furnace tube, for sintering according to the condition that the blue film surface faces upwards and the aluminum paste surface faces downwards, and carrying out high-temperature sintering in a high-temperature sintering area by setting the temperature difference that the upper temperature is lower than or higher than the lower temperature; the sintering furnace tube in the step has a conventional atmospheric aerobic environment, the sintering speed is 240inch/min, the sintering temperature is set in a drying zone at 450 ℃ and a sintering zone at 500 ℃ according to different drying and sintering zones, and sintering is carried out under the sintering condition that the upper thermocouple and the lower thermocouple are set to be in the range of the upper temperature difference and the lower temperature difference or the upper temperature difference and the lower temperature difference are 15-40 ℃, so that the PERC battery piece without a cavity and with uniform LBSF thickness is obtained.
In a traditional sintering method, aluminum silicon on the back surface can diffuse in a groove opening area during high-temperature sintering, and aluminum silicon solidifies from outside to inside due to a cooling interface under a sintering condition without temperature difference from top to bottom and generates an aluminum cavity (Al void) after a silicon wafer is sintered due to a Kirkendall effect, so that the battery efficiency is reduced. When the sintering is carried out by the temperature difference, the aluminum-silicon cooling interface is cooled from inside to outside from the gradient of aluminum-silicon- > LBSF- > aluminum-silicon alloy aluminum layer, and the liquid aluminum at the outermost layer is cooled and solidified after the aluminum-silicon alloy finishes liquid-solid phase transformation. Thus, enough liquid aluminum is ensured to be supplemented to the aluminum-silicon alloy phase, and the aluminum cavity phenomenon that the aluminum-silicon alloy is sucked out of the outer aluminum layer to be cooled because the outer aluminum is solidified first is avoided.
Compared with the prior art, the invention has the advantages that: according to the sintering method for improving the aluminum cavity of the PERC battery, due to the fact that the thermocouple is used for controlling the temperature and setting the unequal-temperature sintering of the front side and the back side of the silicon wafer, the common aluminum cavity of the PERC is solved, the aluminum-silicon contact performance is improved, the passivation effect of the LBSF is improved, the thickness of the LBSF can be increased, the passivation quality is improved, and the battery efficiency of the PERC without the aluminum cavity is further improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic illustration of the sintering of a silicon wafer in accordance with a preferred embodiment of the present invention 1;
FIG. 2 is a SEM diagram of aluminum voids formed by sintering according to the conventional method in comparative example 1;
FIG. 3 is an SEM diagram of the silicon wafer without aluminum voids prepared in the preferred embodiment 1 of the present invention;
fig. 4 is an aluminum-silicon phase diagram of a silicon wafer prepared in preferred embodiment 1 of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not a whole embodiment. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following examples, the silicon wafers used may be single polycrystalline silicon wafers available from medium to medium ring stocks; the adopted laser grooving equipment is DR-Al-Y100, and is purchased from Wuhan Dier laser technology Co., Ltd; PE deposition equipment model E2000HT 410-4, available from Centrotherm; the instrument for detecting the aluminum holes of the cell slice is a Hitachi electron scanning electron microscope SEM; the cell efficiency test is a hall efficiency test.
Example 1
As shown in fig. 1 and fig. 3-4, a sintering method for improving aluminum voids of a PERC cell according to the present embodiment includes the following steps:
the method comprises the following steps: the method comprises the steps of cleaning and texturing an original silicon wafer from one time to plating a passivation and anti-reflection film on the back side and an anti-reflection film on the front side according to a battery process, then grooving on the back side through laser equipment, and selecting corresponding power to perform grooving on different patterns (Dot/Dash/Line and the like) according to the requirements of a PERC process.
Step two: the method comprises the steps that back silver back aluminum front silver paste printing is carried out on a slotted silicon wafer in screen printing equipment, the printed silicon wafer is fed into sintering equipment (Despatch), namely a sintering furnace tube, to be sintered downwards according to the condition that a blue film surface faces upwards and an aluminum paste surface faces downwards, the sintering equipment comprises a low-temperature drying area and a high-temperature sintering area, the low-temperature drying area and the high-temperature sintering area respectively comprise a plurality of temperature control areas with different set temperatures, high-temperature sintering is carried out in the high-temperature sintering area through the temperature difference set to be that the upper temperature is lower than the lower temperature, and the sintering temperature of the front surface of the silicon wafer is set to be lower than the set sintering temperature of the back surface of the silicon wafer.
And in the second step, the sintering furnace tube has a conventional atmospheric aerobic environment, the sintering speed is 240inch/min, the sintering temperature is set in a drying zone at 450 ℃ and a sintering zone at 500 ℃ according to different drying and sintering zones, the sintering zones are set in a sintering condition that the upper temperature difference and the lower temperature difference are in a range of 15-40 ℃ through upper and lower thermocouples for sintering, and thus the PERC battery piece without a cavity and with uniform LBSF thickness is obtained.
In the embodiment, the low-temperature baking zone has the same set temperature corresponding to the front surface and the back surface of the silicon wafer, and comprises four temperature control zones (D1, D2, D3 and D4), the set temperature of the temperature control zones along the feeding direction of the silicon wafer gradually rises, namely the set temperature D4 is not less than D3 is not less than D2 is not less than D1, the set temperature of the upper D1 is the same as that of the lower D1, and the set temperature of the upper D2, the set temperature of the lower D3 and the set temperature of the lower D4 are also the same.
The high-temperature sintering area comprises an upper temperature control area corresponding to the front side of the silicon wafer and a lower temperature control area corresponding to the back side of the silicon wafer, the set temperature of the lower temperature control area is 15-40 ℃ higher than that of the upper temperature control area, and preferably the set temperature of the lower temperature control area is 15-20 ℃ higher than that of the upper temperature control area. In this embodiment, the upper temperature control region and the lower temperature control region both include six temperature control regions corresponding to each other, and the temperature control region in each lower temperature control region is 15-40 ℃ higher than the set temperature of the temperature control region in the corresponding upper temperature control region. Six temperature-controlled areas of the upper temperature-controlled area are F1, F2, F3, F4, F5 and F6, six temperature-controlled areas of the lower temperature-controlled area are F1+, F2+, F3+, F4+, F5+ and F6+, for example, F1+ is 20 ℃ higher than F1, and the lower temperature-controlled areas are also 20 ℃ higher than the corresponding upper temperature-controlled areas. In the embodiment, the set temperature ranges of F1, F2 and F3 are similar, the set temperature of F4 is higher than that of F3, the set temperature of F5 is higher than that of F4, and the set temperature of F6 is lower than that of F5.
By the method of the embodiment, when the sintering is performed by the upper low temperature difference and the upper high temperature difference in the second step, the aluminum-silicon cooling interface is cooled from inside to outside from the gradient of aluminum-silicon LBSF → aluminum-silicon alloy → aluminum layer, and after the liquid-solid phase transformation of the aluminum-silicon alloy is completed, the liquid aluminum at the outermost layer is cooled and solidified. Thus, enough liquid aluminum is ensured to be supplemented to the aluminum-silicon alloy phase, and the aluminum cavity phenomenon that the aluminum-silicon alloy is sucked out of the outer aluminum layer to be cooled because the outer aluminum is solidified first is avoided.
Comparative example 1
The comparative example is basically the same as the example 1, and is different in that the set temperatures of the corresponding temperature control areas in the upper temperature control area and the lower temperature control area in the high-temperature sintering area are the same, namely the set temperatures of F1 in the upper temperature control area and F1 in the lower temperature control area are the same, the set temperatures of F2 in the upper temperature control area and F2 in the lower temperature control area are the same, and the other temperature control areas are similarly set.
Example 2 results and discussion
(1) The cell fabricated in example 1 and the cell fabricated in the conventional process of comparative example 1 were examined and analyzed for aluminum voids and lbs f in SEM cross-section, and the results are shown in fig. 2 to 4.
The results of fig. 2 show that the LBSF layer of the cell prepared by the conventional sintering method is thin and uneven, and the Al-Si alloy layer has aluminum voids.
The results of fig. 3 show that LBSF having no aluminum voids and being thick and uniform can be obtained using the sintering method with temperature difference of example 1, further improving the solar cell efficiency.
The aluminum-silicon phase diagram of fig. 4 shows that the aluminum-silicon phase undergoes a liquid-solid transformation along the solidus line with F (960 ℃) → E (577 ℃), and using the method of sintering with temperature difference of example 1, it is possible to obtain a gradual cooling of the aluminum-silicon LBSF → aluminum-silicon alloy → aluminum layer, thereby achieving an aluminum-void free and thick and uniform LBSF.
(2) The battery plate manufactured in example 1 and the battery plate manufactured in the conventional process of comparative example 1 were used to test the battery IV effect, and the results are shown in the following table:
TABLE 1 test results
The Uoc is open-circuit voltage, the Isc is short-circuit current, the larger the Uoc is, the better the Isc is, the larger the Isc is, the better the Eta is conversion efficiency, the FF is a filling factor, the Rs is series resistance, and the Rsh is parallel resistance.
From the electrical property test results of table 1, it can be derived: the battery performance obtained by the sintering method in example 1 is improved by 0.09% compared with the battery piece prepared by the traditional method in comparative example 1, the improvement of open-circuit Uoc, short-current Isc and filling factor FF comes from the improvement of open-circuit Uoc, short-current Isc and filling factor FF, the better FF filling of aluminum-silicon contact is realized due to no aluminum cavity, the current loss is also less, the lbs f is thicker and more uniform, the battery passivation effect is improved, and the open-circuit Uoc and the short-current I are improvedsc。
According to the sintering method for improving the aluminum cavity of the PERC battery, the front surface and the back surface of the silicon wafer are subjected to non-isothermal sintering through the thermocouple temperature control, the common aluminum cavity of the PERC is solved, the aluminum-silicon contact is improved, the LBSF thickness is increased, and the passivation effect is improved. The preparation method solves and improves the problems of small aluminum cavity and LBSF thickness and poor quality caused by the traditional PERC sintering, and further improves the battery efficiency of the PERC without the aluminum cavity.
The above embodiments are merely illustrative of the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and implement the invention, and not to limit the scope of the invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered by the scope of the present invention.
Claims (1)
1. A sintering method for improving aluminum voiding of a PERC cell, the sintering method comprising the steps of: feeding the silicon wafer printed with the slurry into sintering equipment for sintering, wherein the sintering temperature of the front side of the silicon wafer is set to be lower than the sintering temperature set on the back side of the silicon wafer;
the sintering equipment comprises a low-temperature drying area and a high-temperature sintering area, wherein the low-temperature drying area and the high-temperature sintering area both comprise a plurality of temperature control areas with the same or different set temperatures; the temperature control area in the low-temperature drying area gradually rises along the set temperature of the feeding direction of the silicon wafer;
the high-temperature sintering area comprises an upper temperature control area corresponding to the front side of the silicon wafer and a lower temperature control area corresponding to the back side of the silicon wafer, and the set temperature of the lower temperature control area is 15-40 ℃ higher than that of the upper temperature control area; the set temperature of the lower temperature control area is 15-20 ℃ higher than the set temperature of the upper temperature control area;
the upper temperature control area and the lower temperature control area respectively comprise six temperature control areas which correspond to each other, and the temperature control area in each lower temperature control area is 15-40 ℃ higher than the set temperature of the temperature control area in the corresponding upper temperature control area; the front section temperature control areas in the multiple temperature control areas in the high-temperature sintering area are the same, the temperature of the middle section temperature control area gradually rises, and the temperature of the rear section temperature control area decreases;
the temperature of the low-temperature drying area is 300-450 ℃, and the temperature of the high-temperature sintering area is 500-960 ℃;
the low-temperature drying area corresponds to the same set temperature of the front surface and the back surface of the silicon wafer;
the low-temperature drying area comprises four temperature control areas;
the silicon wafer printed with the paste is prepared by the following steps: according to the battery technology, an original silicon wafer is subjected to primary cleaning and texturing, a passivation and anti-reflection film is plated on the back side, and an anti-reflection film is plated on the front side, then back side grooving is carried out through laser equipment, and back silver back aluminum front silver paste printing is carried out on the grooved silicon wafer in screen printing equipment, so that the silicon wafer printed with the paste is obtained.
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| CN114639754B (en) * | 2020-12-15 | 2024-03-15 | 一道新能源科技股份有限公司 | N-TOPCON battery and sintering method thereof |
| CN112670370A (en) * | 2020-12-24 | 2021-04-16 | 横店集团东磁股份有限公司 | Sintering method and application of solar cell |
| CN113013291A (en) * | 2021-02-19 | 2021-06-22 | 横店集团东磁股份有限公司 | PERC double-sided battery and sintering method thereof |
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