CN109411341B - Method for improving diffusion sheet resistance uniformity of SE battery - Google Patents
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Abstract
The invention discloses a method for improving the diffusion sheet resistance uniformity of an SE battery, comprising the following steps of A, selecting a single crystal wafer source; b, conventionally texturing a silicon wafer; c, optimally diffusing the silicon wafer through a diffusion furnace tube, wherein the diffusion temperature is 770-790 ℃, the diffusion time is 6-8 min, the small N2 gas flow is 200-250 sccm, the large N2 gas flow is 400-500 sccm, and the O2 gas flow is 350-450 sccm; d, sequentially and conventionally doping the silicon wafer with laser PSG, etching, thermally oxidizing and annealing, back passivating, coating the front surface of the PECVD, grooving with laser, printing and sintering to obtain a single-crystal PERC laser-doped cell; and E, performing EL and appearance full inspection on the battery piece. The method has simple process and easy realization, and can effectively improve the high sheet resistance uniformity of the low-concentration doping region and the low sheet resistance uniformity of the high-concentration doping region of the cell, thereby effectively improving the conversion efficiency of the cell after optimized diffusion, and leading the shift distribution of the conversion efficiency of the cell to be more concentrated.
Description
Technical Field
The invention belongs to the technical field of single crystal PERC (Positive electrode collector) battery production, and particularly relates to a method for improving the diffusion sheet resistance uniformity of an SE (selective emitter) battery.
Background
In the photovoltaic field, improving the photoelectric conversion efficiency of a solar cell is an important way for improving the industry competitiveness. The PN junction emitter formed in the diffusion process is the basis for generating a photovoltaic effect, the influence of the doping concentration of the PN junction emitter on the conversion efficiency of the solar cell is double, and high-concentration doping is adopted, so that the contact resistance between a silicon wafer and an electrode can be reduced, the series resistance of the cell is reduced, but the high doping concentration can cause the carrier recombination to be enlarged, the service life of minority carriers is reduced, and the open-circuit voltage and the short-circuit current of the cell are influenced; on the contrary, by adopting low-concentration doping, the surface recombination can be reduced, the minority carrier lifetime can be prolonged, but the increase of the contact resistance can be inevitably caused, and the series connection of the batteries is influenced. The structural design of the selective emitter solar cell can well solve the contradiction.
The Selective Emitter (SE) solar cell is characterized in that high-concentration doping is carried out on a contact part of a metal grid line and a silicon wafer and the vicinity of the contact part, and low-concentration doping is carried out in a region except an electrode, so that the contact resistance between the silicon wafer and the electrode is reduced, the surface recombination is reduced, and the minority carrier lifetime is prolonged. The battery with the structure has the following 3 obvious advantages:
(1) the series resistance is reduced, and the filling factor is improved;
(2) the carrier recombination is reduced, and the surface passivation effect is improved;
(3) the short-wave spectral response of the battery is enhanced, and the short-circuit current and the open-circuit voltage are improved.
At present, the laser selective emitter process of the single crystal PERC battery is mainly realized by a laser PSG doping method, and a laser doping process is added between a diffusion process and an etching process in the production line process. Specifically, a phosphorosilicate glass layer generated during diffusion is used as a doping source to carry out laser scanning on the surface of a diffused silicon wafer to form a heavily doped region, but in actual large-scale production, the uniformity of high sheet resistance of diffusion is not easy to control, the uniformity of high sheet resistance can cause large fluctuation of battery conversion efficiency and poor normal distribution concentration.
In the diffusion process, the process parameters influencing the sheet resistance and the sheet resistance uniformity of the diffused silicon wafer include the diffusion temperature, the diffusion time, the small N2 gas flow, the large N2 gas flow and the O2 gas flow of the diffusion furnace tube. Therefore, it is necessary to optimize the diffusion process and improve the uniformity of the high sheet resistance.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a method for improving the uniformity of the diffusion sheet resistance of an SE battery, which is simple in process and easy to realize.
The purpose of the invention is realized as follows: a method for improving the diffusion sheet resistance uniformity of an SE battery comprises the following steps:
a, selecting a single crystal wafer source, wherein the size of a selected silicon wafer is 156.75mm multiplied by 210um, the doping type of the selected silicon wafer is gallium-doped, and the resistivity of the selected silicon wafer is 0.4-1.1 omega;
b, performing conventional texturing on the selected silicon wafer through a texturing machine;
step C, after the texturing is qualified, optimally diffusing the silicon wafer through a diffusion furnace tube, setting the diffusion temperature of the diffusion furnace tube to 770-790 ℃, setting the diffusion time to 6-8 min, setting the small N2 gas flow to 200-250 sccm, setting the large N2 gas flow to 400-500 sccm, setting the O2 gas flow to 350-450 sccm during diffusion, and then entering the tube for diffusion;
d, after the diffusion is qualified, sequentially carrying out conventional laser PSG doping, etching, thermal oxidation annealing, back passivation, PECVD front surface film coating, laser grooving, printing and sintering on the silicon wafer to obtain a single crystal PERC laser doped cell;
and E, carrying out EL and appearance full inspection on the obtained single-crystal PERC laser-doped cell piece, and reserving qualified cells for later use.
Preferably, the optimized diffusion of the textured silicon wafer through the diffusion furnace tube comprises boat feeding, temperature rising, deposition, temperature rising, propulsion, temperature lowering, variable-temperature deposition, temperature lowering and boat discharging in sequence.
Due to the adoption of the technical scheme, the invention has the beneficial effects that:
(1) according to the invention, by comprehensively adjusting diffusion process parameters, the uniformity of high sheet resistance can be effectively improved while the same high sheet resistance value as before optimized diffusion can be maintained after the optimized diffusion of the cell, and the process is simple and easy to realize;
(2) after the cell obtained after the optimized diffusion is doped by the laser PSG, the high-low concentration doped region has high and low sheet resistance values required, and simultaneously has good high and low sheet resistance uniformity, so that the conversion efficiency of the cell after the optimized diffusion is effectively improved, and the shift distribution of the conversion efficiency of the cell is more concentrated.
Detailed Description
It should be understood that the sheet resistance of the low-concentration doped region is generally between 100 Ω to 150 Ω, and the sheet resistance of the high-concentration doped region is generally between 50 Ω to 100 Ω in the current industry.
It should be understood that the diffusion process parameters before optimization are: the diffusion temperature is 790-810 ℃, the diffusion time is 5-10 min, the small N2 gas flow is 100-200 sccm, the large N2 gas flow is 200-400 sccm, and the O2 gas flow is 250-450 sccm.
The technical scheme of the invention is further specifically described by the following embodiments and comparative examples, wherein the embodiments 1, 2 and 3 adopt an optimized diffusion process, and the comparative examples 1 and 2 adopt an original diffusion process.
Example 1
A method for improving the diffusion sheet resistance uniformity of an SE battery comprises the following steps:
a, selecting a single crystal wafer source, wherein the size of a silicon wafer is 156.75mm multiplied by 210um, the doping type of the silicon wafer is gallium-doped, the resistivity of the silicon wafer is 0.4-1.1 omega, and the number of the silicon wafers is 1000;
b, performing conventional texturing on the selected silicon wafer by using the same texturing machine;
step C, after texturing is finished, inserting the silicon wafer on a quartz boat, performing optimized diffusion through the same diffusion furnace tube, setting the diffusion temperature of the diffusion furnace tube to 770 ℃, setting the diffusion time to 6min, setting the small N2 gas flow to 200sccm, setting the large N2 gas flow to 400sccm, setting the O2 gas flow to 350sccm during diffusion, and then performing tube entry diffusion;
step D, after diffusion is finished, respectively extracting one constant temperature region from the middle positions of 5 constant temperature regions corresponding to a diffusion furnace tube on a quartz boat, wherein the 5 constant temperature regions are respectively a furnace opening, a secondary furnace opening, a furnace, a secondary furnace tail and a furnace tail, so that 5 constant temperature regions are extracted in total, a four-probe square resistance tester is used for testing square resistances of a center point and four corners of a silicon wafer, then, standard variance STD (non-uniformity) in the wafer is calculated, and a high-square resistance value and a uniformity testing result of the low-concentration doping region after diffusion is optimized are obtained, and are shown in the following table (unit: omega);
and E, after the test is finished, carrying out whole-surface laser PSG doping on the 5 silicon wafers by the same laser machine (selecting a test sheet resistance graph program corresponding to the laser machine), wherein the whole-surface laser PSG doping is convenient for the test, and the difference between the whole-surface laser PSG doping and the conventional laser PSG doping (selecting a production graph program corresponding to the laser machine) is the difference of doping areas, the conventional laser PSG doping only dopes a specified part of the surface of the silicon wafer, but the whole-surface laser PSG doping dopes the whole surface of the silicon wafer, so that the 5 silicon wafers doped by the whole-surface laser PSG can only be processed as reworked wafers after the test is finished. After doping, testing the square resistances of the center point and four corners of the 5 silicon wafers by using the same four-probe square resistance tester as the step D, and then calculating the standard deviation STD (non-uniformity) in the wafer to obtain the low square resistance value and the uniformity test result of the high-concentration doped region after laser PSG doping, wherein the unit is omega;
step F, performing conventional laser PSG doping on the same machine, etching on the same machine, thermal oxidation annealing on the same machine, back passivation on the same machine, PECVD front film coating on the same machine, laser grooving on the same machine, and printing and sintering on the same machine on the residual silicon wafer in sequence to obtain a single crystal PERC laser doped cell;
g, carrying out a cell conversion efficiency test on the obtained single crystal PERC laser doped cell by using a palm test machine, and analyzing the gear distribution condition of the cell conversion efficiency;
and H, carrying out EL and appearance full inspection on the obtained single crystal PERC laser doped cell piece, and reserving qualified cells for later use.
Example 2
A method for improving the diffusion sheet resistance uniformity of an SE battery comprises the following steps:
a, selecting a single crystal wafer source, wherein the size of a silicon wafer is 156.75mm multiplied by 210um, the doping type of the silicon wafer is gallium-doped, the resistivity of the silicon wafer is 0.4-1.1 omega, and the number of the silicon wafers is 1000;
b, performing conventional texturing on the selected silicon wafer by using the same texturing machine;
step C, after texturing is finished, inserting the silicon wafer on a quartz boat, performing optimized diffusion through the same diffusion furnace tube, setting the diffusion temperature of the diffusion furnace tube to 780 ℃, setting the diffusion time to 7min, setting the small N2 gas flow to 220sccm, setting the large N2 gas flow to 450sccm, setting the O2 gas flow to 400sccm during diffusion, and then performing tube entry diffusion;
step D, after diffusion is finished, respectively extracting one constant temperature region from the middle positions of 5 constant temperature regions corresponding to a diffusion furnace tube on a quartz boat, wherein the 5 constant temperature regions are respectively a furnace opening, a secondary furnace opening, a furnace, a secondary furnace tail and a furnace tail, so that 5 constant temperature regions are extracted in total, a four-probe square resistance tester is used for testing square resistances of a center point and four corners of a silicon wafer, then, standard variance STD (non-uniformity) in the wafer is calculated, and a high-square resistance value and a uniformity testing result of the low-concentration doping region after diffusion is optimized are obtained, and are shown in the following table (unit: omega);
and step E, after the test is finished, carrying out whole-surface laser PSG doping on the 5 silicon wafers by the same laser machine (selecting a test sheet resistance graph program corresponding to the laser machine), wherein the whole-surface laser PSG doping is convenient for the test, and the difference between the whole-surface laser PSG doping and the conventional laser PSG doping (selecting a production graph program corresponding to the laser machine) is the difference of doping areas, the conventional laser PSG doping only dopes a specified part of the surface of the silicon wafer, but the whole-surface laser PSG doping dopes the whole surface of the silicon wafer, so that the 5 silicon wafers doped by the whole-surface laser PSG can only be processed as reworked wafers after the test is finished. After doping, testing the square resistances of the center point and four corners of the 5 silicon wafers by using the same four-probe square resistance tester as the step D, and then calculating the standard deviation STD (non-uniformity) in the wafer to obtain the low square resistance value and the uniformity test result of the high-concentration doped region after laser PSG doping, wherein the unit is omega;
step F, performing conventional laser PSG doping on the same machine, etching on the same machine, thermal oxidation annealing on the same machine, back passivation on the same machine, PECVD front film coating on the same machine, laser grooving on the same machine, and printing and sintering on the same machine on the residual silicon wafer in sequence to obtain a single crystal PERC laser doped cell;
g, carrying out a cell conversion efficiency test on the obtained single crystal PERC laser doped cell by using a palm test machine, and analyzing the gear distribution condition of the cell conversion efficiency;
and H, carrying out EL and appearance full inspection on the obtained single crystal PERC laser doped cell piece, and reserving qualified cells for later use.
Example 3
A method for improving the diffusion sheet resistance uniformity of an SE battery comprises the following steps:
a, selecting a single crystal wafer source, wherein the size of a silicon wafer is 156.75mm multiplied by 210um, the doping type of the silicon wafer is gallium-doped, the resistivity of the silicon wafer is 0.4-1.1 omega, and the number of the silicon wafers is 1000;
b, performing conventional texturing on the selected silicon wafer by using the same texturing machine;
step C, after texturing is finished, inserting the silicon wafer on a quartz boat, performing optimized diffusion through the same diffusion furnace tube, setting the diffusion temperature of the diffusion furnace tube to be 790 ℃, setting the diffusion time to be 8min, setting the small N2 gas flow to be 250sccm, setting the large N2 gas flow to be 500sccm, setting the O2 gas flow to be 450sccm during diffusion, and then entering the tube for diffusion;
step D, after diffusion is finished, respectively extracting one constant temperature region from the middle positions of 5 constant temperature regions corresponding to a diffusion furnace tube on a quartz boat, wherein the 5 constant temperature regions are respectively a furnace opening, a secondary furnace opening, a furnace, a secondary furnace tail and a furnace tail, so that 5 constant temperature regions are extracted in total, a four-probe square resistance tester is used for testing square resistances of a center point and four corners of a silicon wafer, then, standard variance STD (non-uniformity) in the wafer is calculated, and a high-square resistance value and a uniformity testing result of the low-concentration doping region after diffusion is optimized are obtained, and are shown in the following table (unit: omega);
and E, after the test is finished, carrying out whole-surface laser PSG doping on the 5 silicon wafers by the same laser machine (selecting a test sheet resistance graph program corresponding to the laser machine), wherein the whole-surface laser PSG doping is convenient for the test, and the difference between the whole-surface laser PSG doping and the conventional laser PSG doping (selecting a production graph program corresponding to the laser machine) is the difference of doping areas, the conventional laser PSG doping only dopes a specified part of the surface of the silicon wafer, but the whole-surface laser PSG doping dopes the whole surface of the silicon wafer, so that the 5 silicon wafers doped by the whole-surface laser PSG can only be processed as reworked wafers after the test is finished. After doping, testing the square resistances of the center point and four corners of the 5 silicon wafers by using the same four-probe square resistance tester as the step D, and then calculating the standard deviation STD (non-uniformity) in the wafer to obtain the low square resistance value and the uniformity test result of the high-concentration doped region after laser PSG doping, wherein the unit is omega;
step F, performing conventional laser PSG doping on the same machine, etching on the same machine, thermal oxidation annealing on the same machine, back passivation on the same machine, PECVD front film coating on the same machine, laser grooving on the same machine, and printing and sintering on the same machine on the residual silicon wafer in sequence to obtain a single crystal PERC laser doped cell;
g, carrying out a cell conversion efficiency test on the obtained single crystal PERC laser doped cell by using a palm test machine, and analyzing the gear distribution condition of the cell conversion efficiency;
and H, carrying out EL and appearance full inspection on the obtained single crystal PERC laser doped cell piece, and reserving qualified cells for later use.
Comparative example 1
A method for improving the diffusion sheet resistance uniformity of an SE battery comprises the following steps:
a, selecting a single crystal wafer source, wherein the size of a silicon wafer is 156.75mm multiplied by 210um, the doping type of the silicon wafer is gallium-doped, the resistivity of the silicon wafer is 0.4-1.1 omega, and the number of the silicon wafers is 1000;
b, performing conventional texturing on the selected silicon wafer by using the same texturing machine;
step C, after texturing is finished, inserting the silicon wafer on a quartz boat, performing optimized diffusion through the same diffusion furnace tube, setting the diffusion temperature of the diffusion furnace tube to be 790 ℃, setting the diffusion time to be 5min, setting the small N2 gas flow to be 100sccm, setting the large N2 gas flow to be 200sccm, setting the O2 gas flow to be 250sccm during diffusion, and then entering the tube for diffusion;
step D, after diffusion is finished, respectively extracting one constant temperature region from the middle positions of 5 constant temperature regions corresponding to a diffusion furnace tube on a quartz boat, wherein the 5 constant temperature regions are respectively a furnace opening, a secondary furnace opening, a furnace, a secondary furnace tail and a furnace tail, so that 5 constant temperature regions are extracted in total, a four-probe square resistance tester is used for testing square resistances of a center point and four corners of a silicon wafer, then, standard variance STD (non-uniformity) in the wafer is calculated, and a high-square resistance value and a uniformity testing result of the low-concentration doping region after diffusion is optimized are obtained, and are shown in the following table (unit: omega);
and E, after the test is finished, carrying out whole-surface laser PSG doping on the 5 silicon wafers by the same laser machine (selecting a test sheet resistance graph program corresponding to the laser machine), wherein the whole-surface laser PSG doping is convenient for the test, and the difference between the whole-surface laser PSG doping and the conventional laser PSG doping (selecting a production graph program corresponding to the laser machine) is the difference of doping areas, the conventional laser PSG doping only dopes a specified part of the surface of the silicon wafer, but the whole-surface laser PSG doping dopes the whole surface of the silicon wafer, so that the 5 silicon wafers doped by the whole-surface laser PSG can only be processed as reworked wafers after the test is finished. After doping, testing the square resistances of the center point and four corners of the 5 silicon wafers by using the same four-probe square resistance tester as the step D, and then calculating the standard deviation STD (non-uniformity) in the wafer to obtain the low square resistance value and the uniformity test result of the high-concentration doped region after laser PSG doping, wherein the unit is omega;
step F, performing conventional laser PSG doping on the same machine, etching on the same machine, thermal oxidation annealing on the same machine, back passivation on the same machine, PECVD front film coating on the same machine, laser grooving on the same machine, and printing and sintering on the same machine on the residual silicon wafer in sequence to obtain a single crystal PERC laser doped cell;
g, carrying out a cell conversion efficiency test on the obtained single crystal PERC laser doped cell by using a palm test machine, and analyzing the gear distribution condition of the cell conversion efficiency;
and H, carrying out EL and appearance full inspection on the obtained single crystal PERC laser doped cell piece, and reserving qualified cells for later use.
Comparative example 2
A method for improving the diffusion sheet resistance uniformity of an SE battery comprises the following steps:
a, selecting a single crystal wafer source, wherein the size of a silicon wafer is 156.75mm multiplied by 210um, the doping type of the silicon wafer is gallium-doped, the resistivity of the silicon wafer is 0.4-1.1 omega, and the number of the silicon wafers is 1000;
b, performing conventional texturing on the selected silicon wafer by using the same texturing machine;
step C, after texturing is finished, inserting the silicon wafer on a quartz boat, performing optimized diffusion through the same diffusion furnace tube, setting the diffusion temperature of the diffusion furnace tube to be 810 ℃, setting the diffusion time to be 10min, setting the small N2 gas flow to be 200sccm, setting the large N2 gas flow to be 400sccm, setting the O2 gas flow to be 450sccm during diffusion, and then entering the tube for diffusion;
step D, after diffusion is finished, respectively extracting one constant temperature region from the middle positions of 5 constant temperature regions corresponding to a diffusion furnace tube on a quartz boat, wherein the 5 constant temperature regions are respectively a furnace opening, a secondary furnace opening, a furnace, a secondary furnace tail and a furnace tail, so that 5 constant temperature regions are extracted in total, a four-probe square resistance tester is used for testing square resistances of a center point and four corners of a silicon wafer, then, standard variance STD (non-uniformity) in the wafer is calculated, and a high-square resistance value and a uniformity testing result of the low-concentration doping region after diffusion is optimized are obtained, and are shown in the following table (unit: omega);
and step E, after the test is finished, carrying out whole-surface laser PSG doping on the 5 silicon wafers by the same laser machine (selecting a test sheet resistance graph program corresponding to the laser machine), wherein the whole-surface laser PSG doping is convenient for the test, and the difference between the whole-surface laser PSG doping and a production graph program corresponding to a conventional laser PSG doping selection laser machine is that the doping areas are different, the conventional laser PSG doping only dopes the appointed part of the surface of the silicon wafer, but the whole-surface laser PSG doping dopes the whole surface of the silicon wafer, so that the 5 silicon wafers doped by the whole-surface laser PSG can only be processed as reworked wafers after the test is finished. After doping, testing the square resistances of the center point and four corners of the 5 silicon wafers by using the same four-probe square resistance tester as the step D, and then calculating the standard deviation STD (non-uniformity) in the wafer to obtain the low square resistance value and the uniformity test result of the high-concentration doped region after laser PSG doping, wherein the unit is omega;
step F, performing conventional laser PSG doping on the same machine, etching on the same machine, thermal oxidation annealing on the same machine, back passivation on the same machine, PECVD front film coating on the same machine, laser grooving on the same machine, and printing and sintering on the same machine on the residual silicon wafer in sequence to obtain a single crystal PERC laser doped cell;
g, carrying out a cell conversion efficiency test on the obtained single crystal PERC laser doped cell by using a palm test machine, and analyzing the gear distribution condition of the cell conversion efficiency;
and H, carrying out EL and appearance full inspection on the obtained single crystal PERC laser doped cell piece, and reserving qualified cells for later use.
The following are the results (average values) of the conversion efficiency test of the single crystal PERC laser-doped cell sheets obtained in examples 1, 2 and 3 of the present invention and comparative examples 1 and 2:
the following are the statistics of the distribution of the transition efficiency levels of the single crystal PERC laser-doped cell pieces obtained in examples 1, 2 and 3 and comparative examples 1 and 2 of the present invention:
therefore, compared with the prior comparative examples 1 and 2 of the diffusion process, the examples 1, 2 and 3 adopting the optimized diffusion process can still reach the prior high-square resistance value after diffusion and the uniformity of the high-square resistance value is improved; compared with the prior comparative examples 1 and 2 of the diffusion process, the examples 1, 2 and 3 adopting the optimized diffusion process have the advantages that the high-concentration doped region obtained after laser PSG doping can still reach the required low sheet resistance value, and the uniformity of the low sheet resistance value is improved; compared with the prior diffusion process comparative examples 1 and 2, the examples 1, 2 and 3 adopting the optimized diffusion process have the advantages that the gear distribution concentration of the conversion efficiency of the cell is high, and the conversion efficiency of the cell is relatively improved by 0.08%.
In summary, the diffusion process parameters are comprehensively adjusted, so that the uniformity of high sheet resistance can be effectively improved while the same high sheet resistance value as before the diffusion is optimized after the diffusion is optimized, and the process is simple and easy to realize; after the cell obtained after the optimized diffusion is doped by the laser PSG, the obtained high-concentration doped region has a good low sheet resistance uniformity while the required low sheet resistance value is achieved, so that the conversion efficiency of the cell after the optimized diffusion is effectively improved, and the shift distribution of the conversion efficiency of the cell is more concentrated.
Finally, it should be noted that the above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same, and although the present invention is described in detail with reference to the above-mentioned embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the specific embodiments of the present invention without departing from the spirit and scope of the present invention, and all the modifications or equivalent substitutions should be covered in the claims of the present invention.
Claims (2)
1. A method for improving the uniformity of the diffusion sheet resistance of an SE battery is characterized by comprising the following steps:
a, selecting a single crystal wafer source, wherein the size of a selected silicon wafer is 156.75mm multiplied by 210um, the doping type of the selected silicon wafer is gallium-doped, and the resistivity of the selected silicon wafer is 0.4-1.1 omega;
b, performing conventional texturing on the selected silicon wafer through a texturing machine;
step C, after the texturing is qualified, optimally diffusing the silicon wafer through a diffusion furnace tube, setting the diffusion temperature of the diffusion furnace tube to 770-790 ℃, setting the diffusion time to 6-8 min, setting the small N2 gas flow to 200-250 sccm, setting the large N2 gas flow to 400-500 sccm, setting the O2 gas flow to 350-450 sccm during diffusion, and then entering the tube for diffusion;
d, after the diffusion is qualified, sequentially carrying out conventional laser PSG doping, etching, thermal oxidation annealing, back passivation, PECVD front surface film coating, laser grooving, printing and sintering on the silicon wafer to obtain a single crystal PERC laser doped cell;
and E, carrying out EL and appearance full inspection on the obtained single-crystal PERC laser-doped cell piece, and reserving qualified cells for later use.
2. The method for improving the uniformity of the diffusion sheet resistance of the SE battery according to claim 1, wherein: the optimized diffusion of the textured silicon wafer through the diffusion furnace tube comprises boat feeding, temperature rising, deposition, temperature rising, propulsion, temperature lowering, variable temperature deposition, temperature lowering and boat discharging in sequence.
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| CN109980047B (en) * | 2019-03-29 | 2021-02-12 | 山西潞安太阳能科技有限责任公司 | Low-voltage diffusion process matched with selective emitter |
| CN110189992A (en) * | 2019-06-13 | 2019-08-30 | 常州时创能源科技有限公司 | The alkaline etching technique of SE solar battery |
| CN112928180B (en) * | 2019-12-05 | 2022-08-09 | 苏州阿特斯阳光电力科技有限公司 | Diffusion method suitable for LDSE technology |
| CN112635590B (en) * | 2020-12-18 | 2023-04-18 | 晶澳太阳能有限公司 | Preparation method of high-efficiency monocrystalline silicon SE-PERC battery piece |
| CN112768365B (en) * | 2021-01-11 | 2022-06-14 | 晶澳太阳能有限公司 | Method for detecting graphic precision of laser-doped SE battery |
| CN113130673B (en) * | 2021-03-04 | 2023-07-07 | 苏州迈为科技股份有限公司 | Solar cell preparation method and device and solar cell |
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