CN113130673B - Solar cell preparation method and device and solar cell - Google Patents

Solar cell preparation method and device and solar cell Download PDF

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CN113130673B
CN113130673B CN202110239300.5A CN202110239300A CN113130673B CN 113130673 B CN113130673 B CN 113130673B CN 202110239300 A CN202110239300 A CN 202110239300A CN 113130673 B CN113130673 B CN 113130673B
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preset areas
silicon wafer
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square resistance
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CN113130673A (en
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龚志清
沈春涛
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Suzhou Maxwell Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

The application provides a preparation method and a preparation device of a solar cell and the solar cell. The preparation method comprises the following steps: providing a lightly doped silicon wafer, wherein the lightly doped silicon wafer comprises a plurality of first preset areas to be heavily doped by laser; obtaining the square resistance distribution of the lightly doped silicon wafer; determining laser heavy doping power of a plurality of first preset areas according to the square resistance distribution; and carrying out laser heavy doping on the first preset areas according to the laser heavy doping power so that the difference of the square resistance values of any two first preset areas after laser meets a preset range. According to the preparation method of the solar cell, the proper laser heavy doping power can be respectively matched for the plurality of regions to be heavily doped, so that the sheet resistance consistency of the heavily doped regions is guaranteed, and the photoelectric conversion efficiency of the solar cell is improved better.

Description

Solar cell preparation method and device and solar cell
Technical Field
The present invention relates to the field of solar cells, and in particular, to a method and apparatus for manufacturing a solar cell, and a solar cell.
Background
The selective emitter (Selective Emitter) solar cell is characterized in that heavy doping is carried out at the contact part of the metal gate line electrode and the silicon wafer, and light doping is carried out at the position between the electrodes. In industry, laser doping is often used to prepare an SE structure, that is, after phosphorus diffusion, a silicon surface is irradiated by laser to change a silicon substrate into a molten state, doping atoms can rapidly enter the molten silicon, and after a laser beam disappears, the molten silicon is cooled and crystallized, and the doping atoms enter a silicon crystal to form a heavily doped region.
In the manufacturing process of the selective emitter, light doping is firstly carried out before laser heavy doping, and the light doping adopts a tubular diffusion method, so that gas enters from the periphery of the silicon wafer, and the silicon wafer is easy to cause large middle square resistance and small edge square resistance. After the laser is adopted for heavy doping, the sheet resistance of the heavy doped region can generate a certain drop. If the lightly doped silicon wafer is heavily doped by using the laser with the same power, the area sheet resistance of each laser heavily doped on the silicon wafer is easy to be uneven, the area sheet resistance of the original large area of the sheet resistance is possibly insufficient, a good ohmic contact cannot be formed between a printed grid line and the silicon wafer, the area sheet resistance of the original low area sheet resistance is excessively large, and electric leakage is easy to occur after printing and sintering.
Disclosure of Invention
Based on this, it is necessary to provide an improved solar cell manufacturing method aiming at the problem of uneven area sheet resistance after laser heavy doping in the conventional manufacturing process of the selective emitter.
A method of fabricating a solar cell, comprising:
providing a lightly doped silicon wafer, wherein the lightly doped silicon wafer comprises a plurality of first preset areas to be heavily doped by laser;
obtaining the square resistance distribution of the lightly doped silicon wafer;
determining laser heavy doping power of the first preset areas according to the square resistance distribution;
and carrying out laser heavy doping on the plurality of first preset areas according to the laser heavy doping power so that the difference of the sheet resistance values of any two first preset areas after laser meets a preset range.
According to the preparation method of the solar cell, the laser heavy doping power of the first preset areas is determined through the sheet resistance distribution of the lightly doped silicon wafer, and the first preset areas can be respectively matched with the proper laser heavy doping power to carry out heavy doping, so that the sheet resistance consistency of the heavily doped first preset areas is guaranteed, and the photoelectric conversion efficiency of the solar cell is improved better.
In one embodiment, the difference between the square resistance values of any two first preset areas after the laser is X, wherein X is more than or equal to-5 omega and less than or equal to 5 omega.
In one embodiment, the obtaining the sheet resistance distribution of the lightly doped silicon wafer includes: measuring the sheet resistance values of a plurality of second preset areas on the lightly doped silicon wafer by a sheet resistance tester; and determining the sheet resistance values of other areas except the second preset areas in an interpolation mode according to the sheet resistance values of the second preset areas.
In one embodiment, the determining the laser heavily doped power of the first preset areas according to the sheet resistance distribution includes: determining the laser heavy doping power corresponding to each subarea according to the square resistance value of each subarea in the square resistance value distribution; and acquiring the laser heavy doping power of the plurality of first preset areas according to the laser heavy doping power corresponding to each sub-area.
In one embodiment, the obtaining the laser heavily doped power of the plurality of first preset areas according to the laser heavily doped power corresponding to each sub-area includes: establishing a coordinate system to obtain the position coordinates of each subarea in the square resistance distribution; establishing the corresponding relation between the position coordinates of different subareas and the laser heavy doping power; providing a vector diagram of the plurality of first preset areas; and determining the laser heavy doping power of the plurality of first preset areas according to the vector diagram and the corresponding relation.
In one embodiment, the determining the laser heavily doped power of the first preset areas according to the sheet resistance distribution includes: acquiring gray values of the first preset areas and other areas except the first preset areas according to the square resistance distribution; and determining the laser heavy doping power of the first preset areas according to the gray values of the first preset areas.
In one embodiment, the obtaining the gray values of the plurality of first preset areas according to the sheet resistance distribution includes: acquiring the square resistance value of each subarea in the first preset areas according to the square resistance value distribution; and determining the gray value of each subarea in the plurality of first preset areas according to the square resistance value of each subarea in the plurality of first preset areas.
In one embodiment, the method for providing a lightly doped silicon wafer comprises: providing a silicon wafer; texturing is carried out on the surface of the silicon wafer, and the silicon wafer is cleaned; and performing tubular diffusion on the cleaned silicon wafer to obtain the lightly doped silicon wafer.
The application also provides a preparation device of the solar cell.
A solar cell fabrication apparatus comprising:
a laser;
the galvanometer system is connected with the laser and used for positioning laser emitted by the laser to a plurality of first preset areas on the lightly doped silicon wafer so as to carry out laser heavy doping on the plurality of first preset areas;
the vibrating mirror system comprises a vibrating mirror control card, the vibrating mirror control card is connected with the laser, sheet resistance distribution data of the lightly doped silicon wafer are prestored in the vibrating mirror control card, and the vibrating mirror control card controls the power of the laser according to the sheet resistance distribution data, so that the difference of sheet resistances of any two first preset areas after laser meets a preset range.
According to the preparation device of the solar cell, the vibration mirror control card can adjust the laser heavy doping power of the laser to the first preset area according to the sheet resistance distribution data of the lightly doped silicon wafer prestored in the vibration mirror control card, so that the sheet resistance consistency of the heavily doped first preset areas is guaranteed, and the photoelectric conversion efficiency of the solar cell is improved better.
The application also provides a solar cell.
A solar cell prepared according to the method of preparing a solar cell as described above.
The solar cell has larger size and good sheet resistance consistency of the heavily doped region, and can effectively improve short circuit current, open circuit voltage and filling factor of the cell and improve photoelectric conversion efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present description or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present description, and that other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a flow chart illustrating steps of a method for fabricating a solar cell according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a lightly doped silicon wafer according to an embodiment of the present application;
FIG. 3 is a flowchart illustrating steps for obtaining a sheet resistance distribution according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram showing the distribution of the sheet resistance in the embodiment shown in FIG. 3;
FIG. 5 is a flowchart illustrating steps for determining laser heavily doped power of a plurality of first preset regions according to an embodiment of the present application;
FIG. 6 is a flowchart illustrating a step of determining laser heavily doped power of a plurality of first preset regions according to another embodiment of the present application;
FIG. 7 is a gray scale of the sheet resistance distribution of the lightly doped silicon wafer of the embodiment shown in FIG. 6;
fig. 8 is a schematic structural view of a solar cell manufacturing apparatus according to an embodiment of the present application.
Description of element numbers:
100. the method comprises the steps of lightly doped silicon wafers 110, first preset areas 120 and other areas except the first preset areas;
200. the solar cell manufacturing device comprises a solar cell manufacturing device 210, a laser device 220, a galvanometer control card 221, a galvanometer control line 222, a power control line 230, a galvanometer 240, a field lens 250 and laser.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," "upper," "lower," "front," "rear," "circumferential," and the like as used herein are based on the orientation or positional relationship shown in the drawings and are merely for convenience of description and to simplify the description, rather than to indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be construed as limiting the invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In the conventional technology, the sheet resistance uniformity of the lightly doped silicon wafer can be improved by improving the front diffusion process, but the complete uniformity cannot be realized. At present, after the sheet resistance of a silicon wafer is still tested by a sheet resistance tester, the whole power value of the heavily doped laser is adjusted to ensure that the whole sheet resistance of a heavily doped region reaches an optimal value, but the problem of non-uniformity of the sheet resistance of the heavily doped laser cannot be solved.
In view of the above, the present application provides a method for manufacturing a solar cell, which can improve the problem of non-uniformity of sheet resistance in heavily doped regions of a selective emitter (Selective Emitter) solar cell. Referring to fig. 1, the preparation method includes the following steps:
s100, providing a lightly doped silicon wafer, wherein the lightly doped silicon wafer comprises a plurality of first preset regions to be heavily doped by laser.
As shown in fig. 2, the lightly doped silicon wafer 100 includes a plurality of first preset regions 110 to be heavily doped by laser and a plurality of other regions 120 except the first preset regions 110. Specifically, the first preset region 110 may be a portion where the metal gate line electrode contacts the silicon wafer 100, and the other region 120 is a lightly doped region between the metal gate line electrodes.
In one embodiment, the step S100 may include the following steps:
s110, providing a silicon wafer.
The silicon wafer may be a monocrystalline silicon wafer such as an N-type monocrystalline silicon wafer or a P-type monocrystalline silicon wafer. In this step, damaged pieces can be removed from the wafer to increase short circuit current and minority carrier lifetime.
S120, texturing is carried out on the surface of the silicon wafer, and the silicon wafer is cleaned.
Specifically, silicon wafer texturing utilizes anisotropic corrosion characteristics of silicon materials in low-concentration alkali liquor to form a pyramid structure on the surface of the silicon wafer, so that reflection is reduced, light absorption is increased, and photoelectric conversion efficiency of a battery is improved. The cleaning step is to eliminate the surface defects, metal impurities, movable ions and organic matters of the silicon wafer so as to obtain a clean silicon wafer surface. And the cut defect layer of the cut surface can be removed in the cut texturing cleaning process, so that efficiency loss caused by the defect of the cut surface is reduced.
And S130, performing tubular diffusion on the cleaned silicon wafer to obtain the lightly doped silicon wafer 100.
Specifically, the tube-type diffusion gas is a combination of oxygen, nitrogen and phosphorus oxychloride, wherein the phosphorus oxychloride can be carried into the diffusion tube by the nitrogen. The temperature of the tubular diffusion can be 760-840 ℃, and the diffusion time can be 600-1200s, so that the lightly doped sheet resistance is ensured to be in a proper range, the subsequent sintering is facilitated to form good ohmic contact, and the photoelectric conversion efficiency of the solar cell is improved.
S200, obtaining the square resistance distribution of the lightly doped silicon wafer 100.
Because the light doping adopts a tubular diffusion method, gas enters from the periphery of the silicon wafer, so that the silicon wafer is easy to cause large square resistance in the middle and small square resistance at the edge. Therefore, the sheet resistance of different regions of the lightly doped silicon wafer 100 needs to be measured first, so as to facilitate the adjustment of the laser power when the first preset region 110 is heavily doped.
In one embodiment, as shown in fig. 2, step S200 may include the following steps:
s210, measuring the sheet resistance values of a plurality of second preset areas on the lightly doped silicon wafer by a sheet resistance tester.
S220, determining the sheet resistance values of the other areas except the second preset areas in an interpolation mode according to the sheet resistance values of the second preset areas.
Specifically, as shown in fig. 5, the plurality of second preset areas may be a central area 5 of the silicon wafer and an area 1, an area 2, an area 3 and an area 4 near four corners on the silicon wafer, the square resistance values of the area 1, the area 2, the area 3, the area 4 and the area 5 can be measured simultaneously by a plurality of square resistance probes on the square resistance tester, and then the square resistance values of other areas can be obtained by performing interpolation calculation (such as linear interpolation), so as to obtain the square resistance distribution of the lightly doped silicon wafer 100. It should be understood that more square resistance probes can be used to test square resistance values of more areas, so that the test precision of the square resistance value distribution is higher, the test cost is increased, and the number of the square resistance probes can be selected by a technician according to practical situations, which is not limited in the application. Fig. 4 shows a schematic diagram of the sheet resistance distribution obtained in the above-described manner, and it can be seen that the sheet resistance distribution includes a plurality of sub-regions, wherein the aforementioned region 1, region 2, region 3, region 4, and region 5 are also sub-regions in the sheet resistance distribution.
S300, determining the laser heavy doping power of the first preset areas 110 according to the square resistance distribution.
S400, performing laser heavy doping on the plurality of first preset areas 110 according to the laser heavy doping power so that the difference of the sheet resistance values of any two first preset areas 110 after laser meets a preset range.
The laser heavy doping power of the first preset areas 110 is determined through the sheet resistance distribution of the lightly doped silicon wafer 100, and the first preset areas 110 can be respectively matched with proper laser heavy doping power to carry out heavy doping, so that the sheet resistance consistency after the heavy doping of the first preset areas 110 is guaranteed, and the photoelectric conversion efficiency of the solar cell is improved better.
Specifically, in an embodiment, as shown in fig. 5, step S300 may include the following steps:
s310', determining the laser heavy doping power corresponding to each sub-region according to the square resistance value of each sub-region in the square resistance value distribution.
After the laser is heavily doped, a certain square resistance drop is formed in the heavily doped region, so that the maximum power of the laser heavy doping can be set according to the maximum square resistance value of the region to be heavily doped and the finally required square resistance value of the heavily doped region, and the laser heavy doping power corresponding to other regions is obtained by multiplying the ratio of the square resistance value of the other regions to the maximum square resistance value by the maximum power of the laser heavy doping. Taking fig. 4 as an example, setting the region 1, the region 2, the region 3, the region 4 and the region 5 as sub-regions to be heavily doped, when the previous process is tubular diffusion, the region 5 has the maximum square resistance value a, the square resistance value of the finally needed heavily doped sub-region is B, and the laser heavily doped power for reducing the square resistance value a of the region 5 to B is P through correlation calculation, wherein P is the maximum power of laser heavily doped. If the sheet resistances of the regions 1, 2, 3 and 4 are C, D, E, F, the heavily doped powers of the regions 1, 2, 3 and 4 may be (C/a) P, (D/a) P, (E/a) P, (F/a) P, respectively. Of course, the skilled person can determine the corresponding laser heavily doped power according to the sheet resistance value in other nonlinear manners, which is not limited in this application.
S320', obtaining the laser heavy doping power of the plurality of first preset areas 110 according to the laser heavy doping power corresponding to each sub-area.
For example, the sub-regions included in each first preset region may be known by comparing with fig. 4, and then the laser heavily doped power of each first preset region 110 may be obtained according to the laser heavily doped power corresponding to the sub-region.
Further, in order to facilitate the acquisition of the laser heavily doped power of the first preset region 110, the step S320' may further include the following steps:
s321', establishing a coordinate system to obtain the position coordinates of each subarea in the square resistance distribution.
Specifically, a rectangular coordinate system can be established by taking any point on the lightly doped silicon wafer 100 as an origin, and taking the coordinates of the central point of each region as the position coordinates of the region. Taking the example shown in fig. 5 as an example, a rectangular coordinate system may be established with the center point of the region 5 as the origin, the position coordinates of the region 5 are (0, 0), and if the coordinates of the center points of the region 1 and the region 2 are (x 1, y 1) and (x 2, y 2), respectively, the position coordinates corresponding to the region 1 and the region 2 are (x 1, y 1) and (x 2, y 2), respectively. The position coordinates of other sub-areas can be obtained by the above method, and will not be described here again. In addition, besides the rectangular coordinate system, the position coordinates of each region can be determined through the polar coordinate system, and the technician can select according to actual conditions, so that the application is not limited.
S322', establishing the corresponding relation between the position coordinates of the different subareas and the laser heavy doping power.
The laser heavily doped power corresponding to each sub-region is obtained in step S310', and the position coordinates corresponding to each sub-region are obtained in step S321', so that the correspondence between the position coordinates of different sub-regions on the lightly doped silicon wafer 100 and the laser heavily doped power can be established. For example, as shown in fig. 5, the position coordinates of the region 1, the region 2 and the region 5 may be (x 1, y 1), (x 2, y 2) and (0, 0), respectively, and the laser heavily doped powers corresponding to the position coordinates are (C/a) ×p, (D/a) ×p and P, respectively.
S323', providing a vector diagram of a plurality of first preset areas 110.
Specifically, the vector image is also called a vector image, and is an image represented by geometric primitives based on mathematical equations such as points, lines or polygons in computer graphics. As shown in fig. 2, the first preset region 110 to be heavily doped is a straight line, so that only the start point and the end point of the straight line need to be provided and connected to form a vector diagram of the first preset region 110. If the first preset area 110 is a curve, the curve can be decomposed into a plurality of vector lines connected end to end, and each vector line still has a start point and an end point and a straight line segment connecting the start point and the end point. As shown in fig. 4, the center point of the different sub-regions may also be the start or end point of the vector line.
S324', determining the laser heavy doping power of the first preset areas 110 according to the vector diagram and the corresponding relation.
As shown in fig. 2, the vector diagram of the first preset area 110 is a straight line, and corresponds to fig. 4, the vector diagram of the first preset area 110 passes through a plurality of sub-areas in fig. 4, and the position coordinates of each sub-area in fig. 4 have corresponding laser heavily doped power, so that according to the position coordinates of each sub-area in fig. 4, through which the vector diagram of the first preset area 110 passes, the position coordinates of each first preset area 110 can be matched with the appropriate laser heavily doped power, and then the corresponding first preset area 110 is subjected to laser heavily doping.
In another embodiment, as shown in fig. 6, the step S300 may further include the steps of:
s310', acquiring gray values of the plurality of first preset areas 110 and other areas 120 except the plurality of first preset areas 110 according to the square resistance distribution.
The gray value of the first preset region can be rapidly determined according to the size of the square resistance value of each sub-region in the first preset region by acquiring the square resistance distribution gray map of the lightly doped silicon wafer.
Specifically, step S310 "includes the steps of:
s311', according to the square resistance distribution, the square resistance of each sub-region in the plurality of first preset regions 110 is obtained.
S312', determining the gray value of each sub-region in the plurality of first preset regions 110 according to the square resistance value of each sub-region in the plurality of first preset regions 110.
Specifically, taking the example shown in fig. 4 as an example, the square resistance of each sub-region in the plurality of first preset regions 110 may be obtained from the square resistance distribution. Then, since the sheet resistance value of the region 5 is the largest and a in the sub-region to be heavily doped, and the corresponding gray value is 255, the gray value of the region 1 may be (C/a) 255, the gray value of the region 2 may be (D/a) 255, and the gray values of other sub-regions may be similarly calculated. It should be noted that the gray values of the other regions 120 except the first preset regions 110 are 0, which means that no laser heavy doping is performed. Fig. 7 shows a sheet resistance distribution gray scale diagram of a lightly doped silicon wafer, wherein the brighter region in the gray region represents a higher gray scale value, the higher laser heavily doped power is required to be used correspondingly, and the black region represents a gray scale value of 0, which means that no heavy doping is performed.
S320', determining the laser heavy doping power of the plurality of first preset areas 110 according to the gray values of the plurality of first preset areas 110.
Specifically, since the gray value of the region 5 is 255 and the corresponding laser heavily doped power is P, the laser heavily doped power corresponding to the region 1 is (C/a) ×255 (P/255), the laser heavily doped power corresponding to the region 2 is (D/a) ×255 (P/255), and the laser heavily doped powers corresponding to other sub-regions can be similarly calculated, so as to obtain the laser heavily doped powers of the plurality of first preset regions 110.
In one embodiment, the difference between the square resistance values of any two first preset areas is X, wherein X is more than or equal to-5 omega and less than or equal to 5 omega. By controlling X to meet the range, the laser heavily doped solar cell has better sheet resistance consistency, and is further beneficial to improving the photoelectric conversion efficiency of the solar cell. Preferably, -3Ω.ltoreq.X.ltoreq.3Ω. More preferably, -1Ω.ltoreq.X.ltoreq.1Ω.
As shown in fig. 8, the present application further provides a solar cell manufacturing apparatus 200, including: a laser 210; the galvanometer system is connected with the laser 210 and is used for positioning laser 250 emitted by the laser 210 to a plurality of first preset areas 110 on the lightly doped silicon wafer 100 so as to carry out laser heavy doping on the plurality of first preset areas 110; the galvanometer system includes a galvanometer control card 220, the galvanometer control card 220 is connected with the laser through a power control line 222, and the galvanometer control card 220 is pre-stored with the square resistance distribution data of the lightly doped silicon wafer 100, and the galvanometer control card 220 controls the power of the laser 210 according to the square resistance distribution data, so that the difference between the square resistances of any two first preset areas 110 after laser meets a preset range.
According to the preparation device 200 of the solar cell, the vibration mirror control card 220 can adjust the laser heavy doping power of the laser 210 to the first preset area 110 according to the sheet resistance distribution data of the lightly doped silicon wafer pre-stored in the vibration mirror control card 220, so that the consistency of the sheet resistances of the first preset areas 110 after heavy doping is guaranteed, and the photoelectric conversion efficiency of the solar cell is improved better.
Further, as shown in fig. 8, the galvanometer system further includes a galvanometer 230 and a field lens 240 connected to a driving end of the galvanometer 230, and the galvanometer 230 is connected to the galvanometer control card 220 through a galvanometer control line 221. When the heavily doped scanning is performed, the galvanometer control card 220 controls the light emitting power of the laser 210 through the power control line 222, and simultaneously controls the action of the galvanometer 230 through the galvanometer control line 221, so that the laser emitted by the laser 210 is positioned to a plurality of first preset areas 110 of the silicon wafer 100 through the field lens 240 for laser heavily doping.
The application also provides a solar cell, which is prepared according to the preparation method of the solar cell.
The solar cell has larger size and good sheet resistance consistency of the heavily doped region, and can effectively improve short circuit current, open circuit voltage and filling factor of the cell and improve photoelectric conversion efficiency.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (8)

1. A method of manufacturing a solar cell, comprising:
providing a lightly doped silicon wafer, wherein the lightly doped silicon wafer comprises a plurality of first preset areas to be heavily doped by laser;
obtaining the square resistance distribution of the lightly doped silicon wafer;
determining the laser heavy doping power of the first preset areas according to the square resistance distribution, wherein the determining the laser heavy doping power of the first preset areas according to the square resistance distribution comprises the following steps: determining the laser heavy doping power corresponding to each subarea according to the square resistance value of each subarea in the square resistance value distribution; obtaining laser heavy doping power of the plurality of first preset areas according to the laser heavy doping power corresponding to each subarea, wherein each subarea is a to-be-heavily doped area;
and carrying out laser heavy doping on the plurality of first preset areas according to the laser heavy doping power so that the difference of the square resistance values of any two first preset areas after laser meets a preset range, wherein the difference of the square resistance values of any two first preset areas after laser is X, and X is more than or equal to minus 5 omega and less than or equal to 5 omega.
2. The method for manufacturing a solar cell according to claim 1, wherein the obtaining the sheet resistance distribution of the lightly doped silicon wafer comprises:
measuring the sheet resistance values of a plurality of second preset areas on the lightly doped silicon wafer by a sheet resistance tester;
and determining the sheet resistance values of other areas except the second preset areas in an interpolation mode according to the sheet resistance values of the second preset areas.
3. The method for manufacturing a solar cell according to claim 1, wherein the obtaining the laser heavily doped power of the plurality of first preset regions according to the laser heavily doped power corresponding to each sub-region includes:
establishing a coordinate system to obtain the position coordinates of each subarea in the square resistance distribution;
establishing the corresponding relation between the position coordinates of different subareas and the laser heavy doping power;
providing a vector diagram of the plurality of first preset areas;
and determining the laser heavy doping power of the plurality of first preset areas according to the vector diagram and the corresponding relation.
4. The method for manufacturing a solar cell according to claim 1, wherein determining the laser heavily doped power of the plurality of first preset regions according to the sheet resistance distribution comprises:
acquiring gray values of the first preset areas and other areas except the first preset areas according to the square resistance distribution;
and determining the laser heavy doping power of the first preset areas according to the gray values of the first preset areas.
5. The method for manufacturing a solar cell according to claim 4, wherein the obtaining gray values of the plurality of first preset regions according to the sheet resistance distribution comprises:
acquiring the square resistance value of each subarea in the first preset areas according to the square resistance value distribution;
and determining the gray value of each subarea in the plurality of first preset areas according to the square resistance value of each subarea in the plurality of first preset areas.
6. The method of claim 1, wherein providing a lightly doped silicon wafer comprises:
providing a silicon wafer;
texturing is carried out on the surface of the silicon wafer, and the silicon wafer is cleaned;
and performing tubular diffusion on the cleaned silicon wafer to obtain the lightly doped silicon wafer.
7. A solar cell manufacturing apparatus, comprising:
a laser;
the galvanometer system is connected with the laser and used for positioning laser emitted by the laser to a plurality of first preset areas on the lightly doped silicon wafer so as to carry out laser heavy doping on the plurality of first preset areas;
the vibrating mirror system comprises a vibrating mirror control card, wherein the vibrating mirror control card is connected with the laser, square resistance value distribution data of the lightly doped silicon wafer are pre-stored in the vibrating mirror control card, the vibrating mirror control card controls the power of the laser according to the square resistance value distribution data, so that the difference of square resistance values of any two first preset areas after laser meets a preset range, and the difference of square resistance values of any two first preset areas after laser is X, wherein X is more than or equal to-5 omega and less than or equal to 5 omega; the controlling the power of the laser according to the square resistance distribution includes: determining the laser heavy doping power corresponding to each subarea according to the square resistance value of each subarea in the square resistance value distribution; and acquiring the laser heavy doping power of the plurality of first preset areas according to the laser heavy doping power corresponding to each subarea, wherein the subareas are areas to be heavily doped.
8. A solar cell prepared by the method of any one of claims 1-6.
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