CN113643995B - Detection method and device - Google Patents
Detection method and device Download PDFInfo
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- CN113643995B CN113643995B CN202110825374.7A CN202110825374A CN113643995B CN 113643995 B CN113643995 B CN 113643995B CN 202110825374 A CN202110825374 A CN 202110825374A CN 113643995 B CN113643995 B CN 113643995B
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- 238000001514 detection method Methods 0.000 title claims abstract description 42
- 238000005468 ion implantation Methods 0.000 claims abstract description 227
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000002159 abnormal effect Effects 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 description 186
- 150000002500 ions Chemical class 0.000 description 32
- 230000005856 abnormality Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
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- 238000004458 analytical method Methods 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/263—Bombardment with radiation with high-energy radiation
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Abstract
The application discloses a detection method and a detection device, wherein the method comprises the following steps: placing a test wafer into an ion implantation machine, and performing ion implantation on the test wafer; after the ion implantation, acquiring a color image of the test wafer; and judging the ion implantation condition of the test wafer according to the color image of the test wafer. According to the detection method provided by the application, the color image of the test wafer is obtained, and based on the color characteristics reflected by the color image, whether the ion implantation condition of the test wafer is normal can be accurately judged, the operation is simple, the detection efficiency is improved, timely early warning can be realized, the permanent damage to the test wafer caused by untimely detection is avoided, and the product yield is improved.
Description
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a detection method and apparatus.
Background
With the continued development of semiconductor technology, ion implantation technology has become increasingly important in integrated circuit fabrication. Ion implantation, a key step in the front-end of the fabrication process of integrated circuits, is a technique for doping regions near the semiconductor surface in order to change the carrier concentration and conductivity type of the semiconductor.
After ion implantation is completed, electrical detection is often required to be performed on the device to determine the ion implantation condition. However, the electrical detection method commonly used in the industry is either long in detection period and difficult to timely early warn abnormal conditions, or complex in detection means, and is difficult to detect large-scale devices, so that the detection efficiency is low.
Disclosure of Invention
In view of the above, the embodiments of the present application provide a detection method and apparatus for solving at least one technical problem existing in the prior art.
In order to achieve the above purpose, the technical scheme of the application is realized as follows:
an embodiment of the present application provides a detection method, where the method includes:
placing a test wafer into an ion implantation machine, and performing ion implantation on the test wafer;
after the ion implantation, acquiring a color image of the test wafer;
And judging the ion implantation condition of the test wafer according to the color image of the test wafer.
Optionally, the acquiring the color image of the test wafer includes:
A color image of the test wafer is acquired based on the image sensor RGBC.
Optionally, the determining the ion implantation condition of the test wafer according to the color image includes:
Comparing the color image of the test wafer with the color image of the standard wafer;
And judging the ion implantation condition of the test wafer according to the comparison result.
Optionally, the determining the ion implantation condition of the test wafer according to the comparison result includes:
If the color characteristics of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal;
If the color characteristics of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal.
Optionally, the placing the test wafer in an ion implantation machine, and performing ion implantation on the test wafer includes:
placing a test wafer into an ion implantation machine, and carrying out regional ion implantation on the test wafer;
And the ion implantation parameters corresponding to each region on the test wafer are different.
Optionally, the determining the ion implantation condition of the test wafer according to the color image includes:
Acquiring color characteristics corresponding to each region on the color image of the test wafer;
Comparing the color characteristics corresponding to each region;
and judging whether the test wafer is subjected to the split-region ion implantation according to the comparison result.
Optionally, the determining whether the test wafer has been subjected to the split-region ion implantation according to the comparison result includes:
If the color characteristics corresponding to each region are different, judging that the test wafer is subjected to the regional ion implantation;
and if the color characteristics corresponding to each region are the same, judging that the test wafer is not subjected to the regional ion implantation.
Optionally, the determining the ion implantation condition of the test wafer according to the color image includes:
Acquiring color characteristics corresponding to each region on the color image of the test wafer;
For each region, acquiring corresponding standard color features from a preset database according to ion implantation parameters of the region; comparing the color features with the standard color features; and judging the ion implantation condition of the region according to the comparison result.
Optionally, the determining the ion implantation condition of the region according to the comparison result includes:
For each region, if the color characteristics corresponding to the region are different from the standard color characteristics, judging that the ion implantation condition of the region is abnormal;
And aiming at each region, if the color characteristic corresponding to the region is the same as the standard color characteristic, judging that the ion implantation condition of the region is normal.
Optionally, the ion implantation parameters include at least one of: ion implantation angle, ion implantation energy, ion implantation element, and ion implantation concentration.
A second aspect of an embodiment of the present application provides a detection apparatus, the apparatus including:
the ion implantation module is used for carrying out ion implantation on the test wafer;
the acquisition module is used for acquiring the color image of the test wafer after the ion implantation;
And the judging module is used for judging the ion implantation condition of the test wafer according to the color image of the test wafer.
Optionally, the acquiring module is specifically configured to:
A color image of the test wafer is acquired based on the image sensor RGBC.
Optionally, the judging module is specifically configured to:
Comparing the color image of the test wafer with the color image of the standard wafer;
And judging the ion implantation condition of the test wafer according to the comparison result.
Optionally, the judging module is specifically configured to:
If the color characteristics of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal;
If the color characteristics of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal.
Optionally, the ion implantation module is configured to:
placing a test wafer into an ion implantation machine, and carrying out regional ion implantation on the test wafer;
And the ion implantation parameters corresponding to each region on the test wafer are different.
Optionally, the judging module is specifically configured to:
Acquiring color characteristics corresponding to each region on the color image of the test wafer;
Comparing the color characteristics corresponding to each region;
and judging whether the test wafer is subjected to the split-region ion implantation according to the comparison result.
Optionally, the judging module is specifically configured to:
If the color characteristics corresponding to each region are different, judging that the test wafer is subjected to the regional ion implantation;
and if the color characteristics corresponding to each region are the same, judging that the test wafer is not subjected to the regional ion implantation.
Optionally, the judging module is specifically configured to: acquiring color characteristics corresponding to each region on the color image of the test wafer;
For each region, acquiring corresponding standard color features from a preset database according to ion implantation parameters of the region; comparing the color features with the standard color features; and judging the ion implantation condition of the region according to the comparison result.
Optionally, the judging module is specifically configured to:
For each region, if the color characteristics corresponding to the region are different from the standard color characteristics, judging that the ion implantation condition of the region is abnormal;
And aiming at each region, if the color characteristic corresponding to the region is the same as the standard color characteristic, judging that the ion implantation condition of the region is normal.
Optionally, the ion implantation parameters include at least one of: ion implantation angle, ion implantation energy, ion implantation element, and ion implantation concentration.
The application discloses a detection method and a detection device, wherein the method comprises the following steps: placing a test wafer into an ion implantation machine, and performing ion implantation on the test wafer; after the ion implantation, acquiring a color image of the test wafer; and judging the ion implantation condition of the test wafer according to the color image of the test wafer. According to the detection method provided by the application, the color image of the test wafer is obtained, and based on the color characteristics reflected by the color image, whether the ion implantation condition of the test wafer is normal can be accurately judged, the operation is simple, the detection efficiency is improved, timely early warning can be realized, the permanent damage to the test wafer caused by untimely detection is avoided, and the product yield is improved.
Drawings
FIG. 1 is a schematic flow chart of a detection method according to an embodiment of the present application;
FIG. 2 is a schematic view of area division of a test wafer according to an embodiment of the present application;
FIG. 3 is a schematic diagram of color features of a feature database according to an embodiment of the present application;
FIG. 4 is a schematic diagram of standard color characteristics corresponding to ion implantation of different concentrations in different regions of a test wafer according to an embodiment of the present application;
Fig. 5 is a schematic structural diagram of a detection device according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Currently, in the semiconductor process, after ion implantation is completed, electrical detection is often required to be performed on the device to determine the ion implantation condition. However, the electrical inspection method commonly used in the industry has a long inspection period, so that it is difficult to early warn the abnormal situation of ion implantation in time, for example, the wafer acceptance test (WAFER ACCEPTANCE TEST, WAT) is to perform electrical test on various test structures on the wafer after all the process steps are completed on the wafer; or the detection means is complex, and the detection of large-scale devices is difficult to realize, so that the detection efficiency is low.
Based on this, the following embodiments of the present application are presented.
Referring to fig. 1, fig. 1 is a flow chart of a detection method according to an embodiment of the application. An embodiment of the present application provides a detection method, where the method includes:
S101, placing the test wafer into an ion implantation machine, and performing ion implantation on the test wafer.
The basic principle of ion implantation is: with the high energy ion beam incident into the material, the ion beam will undergo a series of physical and chemical interactions with atoms or molecules in the material, such that the incident ions gradually lose energy and eventually stay in the material, and cause changes in the surface composition, structure and properties of the material, thereby optimizing the surface properties of the material, or achieving some new excellent properties.
In this embodiment, the ion implantation is performed on the test wafer by using an ion beam with a predetermined energy (for example, energy of the order of 60 keV) by the ion implantation apparatus, so as to change the electrical property of the test wafer. Here, ion implantation may be performed on a plurality of test wafers at the same time, and the specific number may be determined according to performance or actual requirements of the ion implanter.
S102, after ion implantation, acquiring a color image of the test wafer.
In this embodiment, a color image of the test wafer is acquired based on the image sensor RGBC (Red green blue and clear). The image sensor RGBC is a single CMOS chip in which a photodiode, an amplifier, an analog circuit, a digital circuit, or the like are integrated, and thus has a function of detecting light of different colors such as red, green, blue, and transparent.
Specifically, after ion implantation is completed on each test wafer, image information of the test wafer is obtained through an image sensor RGBC, the image information is sent to a special image processing system, the image processing system converts the image information into digital information according to information such as pixel distribution and brightness in the image information, color features are extracted from the digital information through operation, and then a color image of the test wafer is obtained. Here, the color features may include four-color pixels Red (Red), green (Green), blue (Blue), and Clear (Clear). The color profile is related to the total amount of ions implanted per unit area, i.e., ion concentration. The color characteristics of areas of different ion concentrations on the test wafer may exhibit differences.
Under the same process, the ion implantation parameters corresponding to the wafers are consistent, so that the image acquired in theory has no or little color change. Under different processes, because the ion implantation parameters corresponding to the wafers are different, the acquired images also have different color changes, and particularly when the ion implantation abnormality occurs in the test wafer, the color and the brightness of the image of the test wafer are obviously changed.
In this embodiment, the ion implantation abnormality may include ion implantation failure of the ion implantation tool, ion implantation parameters not conforming to a predetermined value (e.g., ion implantation energy, ion implantation element, and ion implantation concentration not conforming to a predetermined value), and ion implantation defects. Ion implantation defects are shown as a large number of defects caused by atomic displacement generated by collision between the ion implantation defects and atoms in the wafer, and when the ion implantation dose is large, the defects are overlapped and interacted to generate more complex defects, so that the number of ion implantation at the defect structure is too large or too small, and the expected effect cannot be achieved.
S103, judging the ion implantation condition of the test wafer according to the color image of the test wafer.
In this embodiment, the color image of the test wafer is compared with the color image of the standard wafer, and the ion implantation condition of the test wafer is determined according to the comparison result. If the color characteristics of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal; if the color characteristics of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal. Here, the color image of the standard wafer may be a color image of a test wafer, which has been ion-implanted before and in which the implantation condition is good. It can be understood that, at the defect structure on the wafer, the electrical abnormality of the position is caused by too much or too little ion quantity, and similarly, when the ion implantation machine fault does not perform ion implantation on the wafer or the ion implantation parameter is not consistent with the preset value, the electrical abnormality caused by too much or too little ion quantity also occurs, so that when the image sensor RGBC is utilized to obtain a color image, the color characteristic displayed at the position is obviously different from that displayed at other adjacent positions, and thus the ion implantation condition abnormality of the test wafer can be judged.
According to the application, after the test wafers are placed into the ion implantation machine for ion implantation, the color images of the test wafers are obtained, and the ion implantation conditions of the test wafers are judged according to the color images of the test wafers, so that whether the ion implantation conditions of the test wafers are normal or not can be accurately judged, the operation is simple, the detection efficiency is improved, and after each test wafer finishes ion implantation, the test wafers are immediately subjected to electrical detection, when the ion implantation conditions of the test wafers are abnormal, timely early warning can be realized, the condition that the test wafers cannot be corrected timely due to untimely detection is avoided, and the product yield is improved.
In some embodiments, the test wafer is placed into an ion implanter for zoned ion implantation of the test wafer. Here, ion implantation parameters are different for each region on the test wafer. The ion implantation parameters may include at least one of: ion implantation energy, ion implantation element, and ion implantation concentration.
The ion implantation concentration is exemplified as an example. Referring to fig. 2, fig. 2 is a schematic view of area division of a test wafer; the ion implantation machine can control the ion concentration of different regions of the test wafer, wherein the test wafer is divided into three different regions, namely a first region, a second region and a third region, the first region corresponds to the ion concentration of implantation being 5×10 14/cm2, the second region corresponds to the ion concentration of implantation being 1×10 15/cm2, and the third region corresponds to the ion concentration of implantation being 2×10 15/cm2.
After ion implantation is completed, a color image of the test wafer may be acquired based on the image sensor RGBC. Specifically, color features corresponding to each region on a color image of the test wafer are obtained, the color features corresponding to each region are compared, and whether the test wafer is subjected to regional ion implantation is judged according to a comparison result. If the color characteristics corresponding to each region are different, namely the colors of the first region, the second region and the third region in the obtained color image are different or partially different, judging that the test wafer is subjected to regional ion implantation; if the color characteristics corresponding to each region are the same, that is, the colors of the first region, the second region and the third region are the same in the obtained color image, it can be determined that the test wafer is not subjected to the regional ion implantation. It should be noted that, before the ion implantation operation is performed, the ion concentration of each region on the test wafer is the same, i.e., the initial color characteristics are the same.
In one embodiment, color features corresponding to each region on a color image of a test wafer are obtained, for each region, corresponding standard color features are obtained from a preset database according to ion implantation parameters of the region, the color features are compared with the standard color features, and ion implantation conditions of the region are judged according to comparison results.
By way of example, the ion implantation concentration is taken as an example, and according to the analysis of the historical test data, the color characteristics corresponding to the different ion concentration ranges, namely, the standard color characteristics, are determined, and based on the color characteristics, a characteristic database is established. As shown in fig. 3, fig. 3 is a schematic color feature diagram of a feature database according to an embodiment of the present application. The characteristic database is built up based on a common ion concentration, such as 1×10 15/cm2, and the range of the characteristic database is divided into a plurality of concentration ranges, such as 49% -62%,62% -75%,75% -88%, … …% -177% -189%,189% -202%, each of which corresponds to a different color characteristic, wherein 50% of the characteristic database corresponds to 5×10 14/cm2, 100% of the characteristic database corresponds to 1×10 15/cm2, and 200% of the characteristic database corresponds to 2×10 15/cm2.
The ion implantation machine is used for controlling the concentration of ions implanted into different areas of the test wafer, wherein the ion concentration of the first area is 5 multiplied by 10 14/cm2, the ion concentration of the second area is 1 multiplied by 10 15/cm2, and the ion concentration of the third area is 2 multiplied by 10 15/cm2. And after ion implantation is completed, acquiring color characteristics corresponding to each region on the color image of the test wafer. Illustratively, the first region exhibits a first color characteristic, the second region exhibits a second color characteristic, and the third region exhibits a third color characteristic.
In an example, referring to fig. 4, fig. 4 is a schematic diagram of standard color characteristics corresponding to different ion concentration injection in different regions of a test wafer according to an embodiment of the present application. And inquiring a characteristic database based on the ion concentration injected in each region to obtain standard color characteristics corresponding to the ion concentration respectively injected in the first region, the second region and the third region, wherein the standard color characteristics are exemplified by a first standard color characteristic, a second standard color characteristic and a third standard color characteristic in sequence.
In this embodiment, for each region, if the color feature corresponding to the region is different from the standard color feature, determining that the ion implantation condition of the region is abnormal; and aiming at each region, if the color characteristic corresponding to the region is the same as the standard color characteristic, judging that the ion implantation condition of the region is normal.
Specifically, when the image sensor RGBC is used to obtain a color image, when the ion implantation abnormality occurs in the test wafer, the ion implantation abnormality of the test wafer can be determined based on the color characteristics and the standard color characteristics of the test wafer because the number of ions is too large or too small and the color characteristics of the test wafer are different from those of the normal ion implantation wafer. If the first color characteristic of the first region on the color image of the test wafer is identical to the first standard color characteristic, the second color characteristic of the second region is identical to the second standard color characteristic, and the third color characteristic of the third region is identical to the third standard color characteristic, judging that the ion implantation conditions of the regions are all normal. If the color characteristic of a certain region is not consistent with the standard color characteristic in the preset database, judging that the ion implantation condition of the region is abnormal, and further inquiring the characteristic database according to the color characteristic of the certain region to determine the actual ion concentration of the region, so that the ion implantation concentration can be determined to be larger or smaller.
According to the embodiment, the color characteristics corresponding to each region on the color image of the test wafer are obtained through regional ion implantation of the test wafer, the color characteristics corresponding to each region are respectively compared, so that whether the test wafer is subjected to regional ion implantation or not can be judged, the color characteristics corresponding to each region are compared with the standard color characteristics in the characteristic database, the actual ion implantation condition of each region is judged, and the method is accurate, reliable, convenient and fast, suitable for batch processing of the test wafer, capable of improving the test efficiency, capable of achieving timely early warning, avoiding permanent damage to the test wafer due to untimely detection, and capable of improving the product yield.
Based on the same technical concept as the detection method, the embodiment of the application provides a detection device, which comprises:
The ion implantation module 501 is configured to place a test wafer into an ion implanter and perform ion implantation on the test wafer.
In this embodiment, the ion implantation is performed on the test wafer by the ion implanter to change the electrical properties of the test wafer. Here, ion implantation may be performed on a plurality of test wafers at the same time, and the specific number may be determined according to performance or actual requirements of the ion implanter.
An acquiring module 502 is configured to acquire a color image of the test wafer after the ion implantation.
In the present embodiment, a color image of the test wafer is acquired based on the image sensor RGBC. The image sensor RGBC is a single CMOS chip in which a photodiode, an amplifier, an analog circuit, a digital circuit, or the like are integrated, and thus has a function of detecting light of different colors such as red, green, blue, and transparent.
Specifically, after ion implantation is completed on each test wafer, image information of the test wafer is acquired through an image sensor RGBC, the image information is sent to a special image processing system, the image processing system converts the image information into digital information according to information such as pixel distribution and brightness in the image information, and color features are extracted from the digital information through operation, so that a color image of the test wafer is obtained. Here, the color features may include four-color pixels Red (Red), green (Green), blue (Blue), and Clear (Clear). The color profile is related to the total amount of ions implanted per unit area, i.e., ion concentration. The color characteristics of areas of different ion concentrations on the test wafer may exhibit differences.
Under the same process, the ion implantation parameters corresponding to the wafers are consistent, so that the acquired images have no or little color change. Under different processes, because the ion implantation parameters corresponding to the wafers are different, the acquired images also have different color changes, and particularly when the ion implantation abnormality occurs in the test wafer, the color and the brightness of the image of the test wafer are obviously changed.
A judging module 503, configured to judge an ion implantation condition of the test wafer according to the color image of the test wafer.
In this embodiment, the color image of the test wafer is compared with the color image of the standard wafer, and the ion implantation condition of the test wafer is determined according to the comparison result. If the color characteristics of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal; if the color characteristics of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal. Here, the color image of the standard wafer may be a color image of a test wafer, which has been ion-implanted before and in which the implantation condition is good.
According to the application, after the test wafers are placed into the ion implantation machine for ion implantation, the color images of the test wafers are obtained, and the ion implantation conditions of the test wafers are judged according to the color images of the test wafers, so that whether the ion implantation conditions of the test wafers are normal or not can be accurately judged, the operation is simple, the detection efficiency is improved, and after each test wafer finishes ion implantation, the test wafers are immediately subjected to electrical detection, and when the ion implantation conditions of the test wafers are abnormal, timely early warning can be realized, permanent damage to the test wafers due to untimely detection is avoided, and the product yield is improved.
In one embodiment, the ion implantation module 501 is used to perform zonal ion implantation on a test wafer. Ion implantation parameters corresponding to each region on the test wafer are different. Here, the ion implantation parameters may include at least one of: ion implantation energy, ion implantation element, and ion implantation concentration. Specific examples are described with reference to the above method embodiments, and are not described herein in detail.
After ion implantation is completed, a color image of the test wafer may be acquired based on the image sensor RGBC. Specifically, color features corresponding to each region on a color image of the test wafer are obtained, the color features corresponding to each region are compared, and whether the test wafer is subjected to regional ion implantation is judged according to a comparison result. Here, if the color characteristics corresponding to each region are different, it may be determined that the test wafer has been subjected to the regional ion implantation; if the color characteristics corresponding to each region are the same, it can be determined that the test wafer is not subjected to the regional ion implantation. Before the ion implantation operation, the ion concentration of each region on the test wafer was the same, i.e., the color characteristics were the same.
In one embodiment, the determining module is specifically configured to obtain a color feature corresponding to each region on the color image of the test wafer.
And for each region, acquiring corresponding standard color features from a preset database according to ion implantation parameters of the region. And comparing the color characteristics with the standard color characteristics, and judging the ion implantation condition of the region according to the comparison result.
In this embodiment, for each region, if the color feature corresponding to the region is different from the standard color feature, determining that the ion implantation condition of the region is abnormal; if the color characteristic corresponding to the region is the same as the standard color characteristic, judging that the ion implantation condition of the region is normal.
Specifically, if the color characteristic represented by a certain area does not accord with the standard color characteristic in the preset database, the ion implantation condition of the area is judged to be abnormal, for example, the characteristic database can be queried according to the color characteristic represented by the area, and the actual ion concentration of the area can be determined, so that the ion implantation concentration can be determined to be larger or smaller.
According to the device provided by the embodiment, the regional ion implantation is carried out on the test wafer, the color characteristics corresponding to each region on the color detection color image of the test wafer are obtained, the color characteristics corresponding to each region are respectively compared, so that whether the test wafer is subjected to regional ion implantation or not can be judged, the color characteristics corresponding to each region are compared with the standard color characteristics in the characteristic database, the actual ion implantation condition of each region is judged, and the device is accurate, reliable, convenient and fast, suitable for processing a large number of test wafers, improves the test efficiency, can realize timely early warning, avoids permanent damage to the test wafer due to untimely detection, and improves the product yield. Specific examples are described with reference to the above method embodiments, and are not described herein in detail.
The methods disclosed in the method embodiments provided by the application can be arbitrarily combined under the condition of no conflict to obtain a new method embodiment.
The features disclosed in the several product embodiments provided by the application can be combined arbitrarily under the condition of no conflict to obtain new product embodiments.
The features disclosed in the embodiments of the method or the apparatus provided by the application can be arbitrarily combined without conflict to obtain new embodiments of the method or the apparatus.
In the several embodiments provided in the present application, it should be understood that the disclosed method and apparatus may be implemented in other manners. The above-described embodiment of the apparatus is merely illustrative, and for example, the division of the modules is merely a logic function division, and there may be other division manners in actual implementation, such as: multiple modules or components may be combined, or may be integrated into another system, or some features may be omitted, or not performed. In addition, the various components shown or discussed may be coupled or directly coupled or communicatively coupled to each other via some interface, whether indirectly coupled or communicatively coupled, devices or modules, whether electrically, mechanically, or otherwise.
The modules described above as separate components may or may not be physically separate, and components shown as modules may or may not be physical units, may be located in one place, or may be distributed over multiple network modules; some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional module in each embodiment of the present application may be integrated in one processing module, or each module may be separately used as one module, or two or more modules may be integrated in one module; the integrated modules may be implemented in hardware or in hardware plus software functional modules.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (18)
1. A method of detection comprising:
placing a test wafer into an ion implantation machine, and performing ion implantation on the test wafer;
after the ion implantation, acquiring a color image of the test wafer;
judging the ion implantation condition of the test wafer according to the color image of the test wafer;
Wherein,
The determining the ion implantation condition of the test wafer according to the color image of the test wafer includes: comparing the color image of the test wafer with the color image of the standard wafer; and judging the ion implantation condition of the test wafer according to the comparison result.
2. The method of claim 1, wherein the acquiring a color image of the test wafer comprises:
A color image of the test wafer is acquired based on the image sensor RGBC.
3. The method of claim 1, wherein determining the ion implantation condition of the test wafer based on the comparison result comprises:
If the color characteristics of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal;
If the color characteristics of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal.
4. The method of claim 1, wherein placing the test wafer into an ion implanter station, ion implanting the test wafer, comprises:
placing a test wafer into an ion implantation machine, and carrying out regional ion implantation on the test wafer;
And the ion implantation parameters corresponding to each region on the test wafer are different.
5. The method of claim 4, wherein determining the ion implantation condition of the test wafer based on the color image of the test wafer comprises:
Acquiring color characteristics corresponding to each region on the color image of the test wafer;
Comparing the color characteristics corresponding to each region;
and judging whether the test wafer is subjected to the split-region ion implantation according to the comparison result.
6. The method of claim 5, wherein determining whether the test wafer has been subjected to the split-region ion implantation based on the comparison result comprises:
If the color characteristics corresponding to each region are different, judging that the test wafer is subjected to the regional ion implantation;
and if the color characteristics corresponding to each region are the same, judging that the test wafer is not subjected to the regional ion implantation.
7. The method of claim 4, wherein determining the ion implantation condition of the test wafer based on the color image comprises:
Acquiring color characteristics corresponding to each region on the color image of the test wafer;
For each region, acquiring corresponding standard color features from a preset database according to ion implantation parameters of the region; comparing the color features with the standard color features; and judging the ion implantation condition of the region according to the comparison result.
8. The method of claim 7, wherein determining the ion implantation condition of the region based on the comparison result comprises:
For each region, if the color characteristics corresponding to the region are different from the standard color characteristics, judging that the ion implantation condition of the region is abnormal;
And aiming at each region, if the color characteristic corresponding to the region is the same as the standard color characteristic, judging that the ion implantation condition of the region is normal.
9. The method of claim 4, wherein the step of determining the position of the first electrode is performed,
The ion implantation parameters include at least one of: ion implantation angle, ion implantation energy, ion implantation element, and ion implantation concentration.
10. A detection device, the device comprising:
the ion implantation module is used for carrying out ion implantation on the test wafer;
the acquisition module is used for acquiring the color image of the test wafer after the ion implantation;
the judging module is used for judging the ion implantation condition of the test wafer according to the color image of the test wafer;
the judging module is specifically configured to: comparing the color image of the test wafer with the color image of the standard wafer; and judging the ion implantation condition of the test wafer according to the comparison result.
11. The apparatus of claim 10, wherein the obtaining module is specifically configured to:
A color image of the test wafer is acquired based on the image sensor RGBC.
12. The apparatus of claim 10, wherein the determining module is specifically configured to:
If the color characteristics of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal;
If the color characteristics of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal.
13. The apparatus of claim 10, wherein the ion implantation module is further configured to:
carrying out regional ion implantation on the test wafer;
And the ion implantation parameters corresponding to each region on the test wafer are different.
14. The apparatus of claim 13, wherein the determining module is specifically configured to:
Acquiring color characteristics corresponding to each region on the color image of the test wafer;
Comparing the color characteristics corresponding to each region;
and judging whether the test wafer is subjected to the split-region ion implantation according to the comparison result.
15. The apparatus of claim 14, wherein the determining module is specifically configured to:
If the color characteristics corresponding to each region are different, judging that the test wafer is subjected to the regional ion implantation;
and if the color characteristics corresponding to each region are the same, judging that the test wafer is not subjected to the regional ion implantation.
16. The apparatus of claim 13, wherein the determining module is specifically configured to: acquiring color characteristics corresponding to each region on the color image of the test wafer;
For each region, acquiring corresponding standard color features from a preset database according to ion implantation parameters of the region; comparing the color features with the standard color features; and judging the ion implantation condition of the region according to the comparison result.
17. The apparatus of claim 16, wherein the determining module is specifically configured to:
For each region, if the color characteristics corresponding to the region are different from the standard color characteristics, judging that the ion implantation condition of the region is abnormal;
And aiming at each region, if the color characteristic corresponding to the region is the same as the standard color characteristic, judging that the ion implantation condition of the region is normal.
18. The apparatus of claim 13, wherein the ion implantation parameters comprise at least one of: ion implantation angle, ion implantation energy, ion implantation element, and ion implantation concentration.
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