KR101702752B1 - Method of inspecting electronic components - Google Patents

Method of inspecting electronic components Download PDF

Info

Publication number
KR101702752B1
KR101702752B1 KR1020150076706A KR20150076706A KR101702752B1 KR 101702752 B1 KR101702752 B1 KR 101702752B1 KR 1020150076706 A KR1020150076706 A KR 1020150076706A KR 20150076706 A KR20150076706 A KR 20150076706A KR 101702752 B1 KR101702752 B1 KR 101702752B1
Authority
KR
South Korea
Prior art keywords
inspection
images
areas
camera
electronic component
Prior art date
Application number
KR1020150076706A
Other languages
Korean (ko)
Other versions
KR20160140276A (en
Inventor
정창부
최대석
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020150076706A priority Critical patent/KR101702752B1/en
Publication of KR20160140276A publication Critical patent/KR20160140276A/en
Application granted granted Critical
Publication of KR101702752B1 publication Critical patent/KR101702752B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/104—Mechano-optical scan, i.e. object and beam moving

Abstract

A method of inspecting electronic components using an inspection camera having a field of view smaller than that of an electronic component, the method comprising: setting a central region and an edge region of the field of view as a valid region and an exclusion region, Dividing the electronic component into a plurality of inspection regions having the same size as the effective region, and extracting a plurality of inspection images from the inspection regions, And comparing the valid areas of the inspection images with reference information to detect defects of the electronic component.

Description

{Method of inspecting electronic components}

Embodiments of the present invention relate to a method for testing electronic components. More particularly, the present invention relates to a method for detecting defects on an electronic component such as a semiconductor die formed on a wafer using an inspection camera.

Semiconductor devices, such as integrated circuit devices, can generally be formed by repeatedly performing a series of process steps on a substrate, such as a silicon wafer. For example, there may be employed a deposition process for forming a film on a wafer, an etching process for forming the film into patterns having electrical characteristics, an ion implantation process or diffusion process for implanting or diffusing impurities into the patterns, A plurality of semiconductor dies may be formed on the wafer by repeatedly performing cleaning and rinsing processes to remove impurities from the wafer.

The semiconductor dies may be individualized through a dicing process, and the individualized semiconductor dies may be fabricated into semiconductor packages through a die bonding process, a molding process, and a sowing process.

The semiconductor dies formed on the wafer or the semiconductor dies customized through the dicing process can be inspected using an inspection camera. For example, in Korean Patent Laid-Open Nos. 10-2010-0029532 and 10-2013-0130510, an inspection apparatus for detecting defects such as foreign substances, stains, scratches, etc. on a wafer by using an image acquisition device such as a camera Have been disclosed.

On the other hand, as the degree of integration of semiconductor dies is improved recently, a high resolution inspection camera can be used to inspect the semiconductor dies. However, since the field of view (FOV) of a high-resolution inspection camera is relatively narrow, it is difficult to inspect semiconductor dies having a relatively large size. In addition, if a high-resolution inspection camera having a relatively large field of view is introduced, the cost of the inspection process for the semiconductor dies can be greatly increased.

Embodiments of the present invention provide an electronic component inspection method capable of performing the inspection process using an inspection camera having a smaller visual field range than an inspection object in an inspection process for various kinds of electronic components as well as semiconductor dies There is a purpose.

According to an aspect of the present invention, there is provided an electronic component inspection method for inspecting an electronic component using an inspection camera having a field of view smaller than an electronic component, the method comprising: And setting the edge portions as valid and excluded regions so that the size of the electronic component is a multiple of the effective region size; dividing the electronic component into a plurality of inspection regions having the same size as the valid region; Obtaining a plurality of inspection images from the inspection areas, and detecting defects of the electronic component by comparing valid areas of the inspection images with reference information.

According to embodiments of the present invention, the inspection regions of the electronic component may be set to be equal to the size of the effective region.

According to embodiments of the present invention, a line scan camera can be used as the inspection camera.

According to embodiments of the present invention, the exclusion regions may correspond to both side edge portions of the visual field range perpendicular to the scan direction of the line scan camera.

According to embodiments of the present invention, the reference information may include reference images or design information of the electronic component.

According to embodiments of the present invention, the comparison of the effective regions of the inspection images with the reference images may be performed by a difference operation between the pixel gray levels of the effective regions and the pixel gray levels of the reference images.

According to embodiments of the present invention, the method may further include generating a test result image using the results of the difference operation.

According to embodiments of the present invention, a pixel corresponding to a result value out of an error range may be detected as a defect among the result values of the difference operation, and the method may include calculating coordinates for the detected defect .

According to embodiments of the present invention, the comparison of the effective regions of the inspection images with the reference images may be performed by a difference operation between the color information of each of the pixels of the effective regions and the color information of each of the pixels of the reference images. have.

According to another aspect of the present invention, there is provided a semiconductor die inspection method for inspecting semiconductor dies using an inspection camera having a smaller field of view than each semiconductor die formed on a wafer, The method comprising the steps of: setting one or more semiconductor dies as a basic inspection area; dividing the basic inspection area into a plurality of inspection areas; obtaining inspection images for the inspection areas; With reference images to detect defects in the one or more semiconductor dies. In particular, the size of the inspection regions may be set to be smaller than the field of view of the inspection camera, and each inspection image may include an effective region corresponding to each inspection region, and other exclusion regions.

According to embodiments of the present invention, the reference images may have the same size as the effective areas of the inspection images.

According to embodiments of the present invention, a line scan camera can be used as the inspection camera.

According to embodiments of the present invention, the exclusion regions may correspond to both side edge portions of the visual field range perpendicular to the scan direction of the line scan camera.

According to embodiments of the present invention, one semiconductor die is set as the basic inspection area when the width of two semiconductor dies divided by the scan width of the line scan camera is an even number, Dies can be set as the basic inspection area.

According to embodiments of the present invention, the valid areas of the inspection images can be compared with the reference images, and the difference between the pixel gray levels of the valid areas and the pixel gray levels of the reference images Defects can be detected.

According to embodiments of the present invention, the method may further include generating a test result image using the results of the difference operation.

According to embodiments of the present invention, it is possible to detect, as a defect, a pixel corresponding to a result value out of the error range among the result values of the difference operation, and the method includes displaying the detected defect on the wafer map .

According to embodiments of the present invention, the valid areas of the inspection images can be compared with the reference images, and the difference between the color information of each pixel of the valid areas and the color information of each pixel of the reference images The defects can be detected.

According to the embodiments of the present invention as described above, the inspection object is divided into a plurality of inspection areas in consideration of the size of the visual range of the inspection object and the inspection camera, and inspection images for each inspection area are acquired And detect defects for the effective regions of each inspection image using the reference images.

Therefore, it is possible to easily perform an inspection process for an inspection object having a relatively large size using an inspection camera having a relatively small field of view range, and to easily perform the inspection process on the edge portions of the inspection image obtained from the inspection regions of the inspection object It is possible to sufficiently prevent inspection errors due to image distortion.

Particularly, since the number of inspection objects and the number of inspection areas constituting the basic inspection area can be preset in consideration of the size of the inspection object and the field of view of the inspection camera, the time and cost required for the inspection process can be greatly reduced have.

1 is a flowchart illustrating an electronic component inspection method according to an embodiment of the present invention.
Fig. 2 is a schematic diagram for explaining the inspection area of the semiconductor die and the effective area and the exclusion areas of the field of view of the inspection camera; Fig.
Fig. 3 is a schematic diagram for explaining the effective area and the exclusion areas of the inspection images obtained using the inspection camera; Fig.
4 is a schematic view for explaining an electronic component inspection method according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention should not be construed as limited to the embodiments described below, but may be embodied in various other forms. The following examples are provided so that those skilled in the art can fully understand the scope of the present invention, rather than being provided so as to enable the present invention to be fully completed.

In the embodiments of the present invention, when one element is described as being placed on or connected to another element, the element may be disposed or connected directly to the other element, . Alternatively, if one element is described as being placed directly on another element or connected, there can be no other element between them. The terms first, second, third, etc. may be used to describe various items such as various elements, compositions, regions, layers and / or portions, but the items are not limited by these terms .

The terminology used in the embodiments of the present invention is used for the purpose of describing specific embodiments only, and is not intended to be limiting of the present invention. Furthermore, all terms including technical and scientific terms have the same meaning as will be understood by those skilled in the art having ordinary skill in the art, unless otherwise specified. These terms, such as those defined in conventional dictionaries, shall be construed to have meanings consistent with their meanings in the context of the related art and the description of the present invention, and are to be interpreted as being ideally or externally grossly intuitive It will not be interpreted.

Embodiments of the present invention are described with reference to schematic illustrations of ideal embodiments of the present invention. Thus, changes from the shapes of the illustrations, e.g., changes in manufacturing methods and / or tolerances, are those that can be reasonably expected. Accordingly, the embodiments of the present invention should not be construed as being limited to the specific shapes of the regions described in the drawings, but include deviations in the shapes, and the elements described in the drawings are entirely schematic and their shapes Is not intended to describe the exact shape of the elements and is not intended to limit the scope of the invention.

One embodiment of the present invention can be used advantageously to inspect electronic components such as semiconductor dies formed on a wafer. However, the scope of the present invention is not limited to the semiconductor dies, and it is also possible to perform inspection for various types of electronic components such as a printed circuit board or a lead frame on which semiconductor elements are mounted, a semiconductor strip including a plurality of semiconductor packages, Can be preferably used in the process.

Particularly, the electronic component inspection method according to an embodiment of the present invention can be preferably used when the field of view of the inspection camera is smaller than the size of the electronic component to be inspected. As the inspection camera, a line scan camera may be used.

1 is a flowchart illustrating an electronic component inspection method according to an embodiment of the present invention. Fig. 2 is a schematic view for explaining the effective area and the exclusion areas of the inspection area of the semiconductor die and the field of view of the inspection camera, Fig. 3 is a schematic view for explaining the valid area and the exclusion areas of the inspection images obtained using the inspection camera to be.

Referring to FIGS. 1 to 3, the central region and the edge regions of the field of view 100 of the inspection camera (not shown) are set as the effective region 102 and the exclusion regions 104 respectively (S100) The semiconductor die 10 can be divided into a plurality of inspection areas 20 (S110).

In particular, the inspection areas 20 of the semiconductor die 10 may each have the same size as the effective area 102 of the inspection camera. In this case, when the line camera is used as the inspection camera, the exclusion areas 104 may correspond to both side edge portions of the visual range 100 perpendicular to the scan direction of the line scan camera, The width of the inspection regions 20 of the semiconductor die 10 may be set equal to the width of the effective region 102. [

On the other hand, the order of steps S100 and S110 may be changed. That is, the semiconductor die 10 is divided into a plurality of inspection areas 20 in consideration of the field of view 100 of the inspection camera, and the visual range 100 (corresponding to the size of the inspection areas 20) May be set as the effective region 102 and the remaining portions, that is, both side edge portions of the visual range 100 may be set as the excluded regions 104. [

Setting the edge regions 104 of the field of view 100 as the excluded regions as described above has the possibility that image distortion occurs at the edge regions 114 of the inspection image 110 obtained by the inspection camera So that edge portions of the visual field range 100 are set as the excluded regions 104 to prevent inspection errors due to image distortion.

As an example, when the semiconductor die 10 having a width of about 60 mm is inspected using a line scan camera having a scan width of about 28 mm, the semiconductor die 10, as shown in FIGS. 2 and 3, It may be divided into three inspection areas 20, and each inspection area 20 may have a width of about 20 mm. In addition, the effective area 102 of the inspection camera may be set as a central area having a width of about 20 mm except for both side edges of the field of view 100, and the field of view 100 having a width of about 4 mm, The edge regions 104 can be set at the opposite side edge portions. Although the semiconductor die 10 has been represented using the letter " A " as shown, this is merely for convenience of description and will not affect the scope of the present invention.

Referring again to FIG. 1, a plurality of inspection images 110 may be obtained from the inspection areas 20 of the semiconductor die 10 using the inspection camera in step S120. In step S130, 110 may be compared to reference images (not shown) to detect defects in the semiconductor die 10.

Specifically, the inspection camera may be used to scan the semiconductor die 10 a plurality of times to obtain inspection images 110, and by comparing the inspection images 110 with reference images, (10). ≪ / RTI > At this time, the reference images may have the same size as the size of the valid areas 112 of the inspection images 110.

The reference images may be acquired in advance through steps S100 to S120.

For example, steps S100 to S120 may be repeatedly performed on the semiconductor dies on the wafer to obtain images for each of the semiconductor dies on the wafer, and defective images may be selected from the images, . As another example, average values of the gray levels of the pixels of the images for each of the semiconductor die may be calculated, and the average values may be used to generate test images.

The comparison of the effective regions 112 of the inspection images 110 with the reference images may be performed through a difference operation for each pixel and the inspection result image may be generated through the difference operation. Specifically, a difference operation is repeatedly performed on the valid areas 112 of the inspection images 110 and the pixel gray levels of the reference images, and the resultant image of the inspection result image Lt; / RTI >

Particularly, if some of the resultant values deviate from the error range, it can be confirmed that a defect has occurred in the corresponding pixel (s). Further, in the inspection result image, the defects can be represented by the result value (s) out of the error range, and the coordinates of the defects can be calculated. Additionally, the defects can be displayed in a wafer map prepared in advance.

As another example, when a color image is obtained from the inspection camera, the comparison of the reference images with the valid areas 112 of the inspection images 110 can be made by comparing the color values of each pixel. For example, defects in the semiconductor die may be detected by comparing RGB (Red Green Blue) color information of each of the pixels constituting the valid areas of the inspection images with RGB color information of each of the pixels constituting the reference images .

As described above, when inspecting an object to be inspected using an inspection camera whose viewing range 100 is smaller than the size of the object to be inspected, the inspected object is divided into a plurality of inspection areas , Obtain inspection images for each inspection area, and detect defects for effective areas of each inspection image using reference images.

Therefore, it is possible to easily inspect the inspection object having a relatively large size using the inspection camera 100 having the relatively small visual field range 100, and to eliminate the edge portions of the inspection range of the inspection camera from the inspection, It is possible to sufficiently prevent the inspection error.

On the other hand, when one inspection object is divided into a plurality of inspection areas, the exclusion areas of the inspection camera can be set to be excessively wide. According to another embodiment of the present invention, in order to improve inspection time and inspection efficiency, a plurality of inspection objects may be set as one basic inspection area, and the basic inspection area may be divided into a plurality of inspection areas.

4 is a schematic view for explaining an electronic component inspection method according to another embodiment of the present invention.

Referring to FIG. 4, according to another embodiment of the present invention, for example, two semiconductor dies 10A and 10B are set as one basic inspection area 30, and the basic inspection area 30 is divided into a plurality of The inspection areas 40 can be divided.

As shown in the figure, when the semiconductor dies 10A and 10B having a width of about 60 mm are inspected using a line scan camera having a scan width of about 28 mm, the two semiconductor dies 10A and 10B are divided into a basic inspection area The basic inspection area 30 can be divided into five inspection areas 40 and five inspection images 120 can be obtained from the five inspection areas 40. [ have. At this time, the widths of the inspection regions 40 may be set to about 24 mm, and the width of the effective regions 122 of the inspection images 120 may be set to be about 24 mm like the inspection regions 40 . In addition, both side edge portions of the inspection images 120 may be set as the excluded regions 124, and the widths of the excluded regions 124 may be set to about 2 mm, respectively.

According to another embodiment of the present invention, when the line scan camera is used as an inspection camera, when the width of the two semiconductor dies 10A and 10B is divided by the scan width of the line scan camera, The semiconductor die 30 can be set as one semiconductor die 10A and the basic inspection area 30 can be set as the two semiconductor dies 10A and 10B when the number is an odd number.

According to another embodiment of the present invention, first, one semiconductor die 10A is set as a basic inspection area, and then the basic inspection area is divided into a plurality of inspection areas in consideration of the scan width of the line scan camera . Subsequently, the central area of the line-of-sight range of the line scan camera may be set to be a valid area so as to be equal to the width of the inspection areas, and other parts may be set as exclusion areas. In this case, when the inspection images are obtained from the basic inspection area, that is, one semiconductor die 10A, when the sum of the widths of the exclusion areas in the inspection images is larger than the width of the effective area, That is, the basic inspection area can be extended to reduce the inspection time and cost. That is, when the sum of the widths of the exclusion areas of the inspection images obtained from one semiconductor die 10A is larger than the effective area as described above, the adjacent two semiconductor dies 10 and 10B are divided into the basic inspection area 30 And then the reset basic inspection area 30 can be divided into a plurality of inspection areas 40. In this case,

Since the number of inspection objects and the number of inspection areas 40 constituting the basic inspection area 30 can be set according to the size of the inspection object and the size of the field of view 100 of the inspection camera as described above, The time and efficiency required for the inspection process using the inspection camera having the relatively small range 100 can be greatly improved.

Although the inspection process for the semiconductor dies 10 has been described above as an example, the inspection method according to the embodiments of the present invention may be applied to various types of electronic components, for example, a printed circuit A substrate or a lead frame, a semiconductor strip composed of semiconductor packages, a modular memory device, or a non-memory device.

For example, when the inspection process is performed on the printed circuit board, the printed circuit board is divided into a plurality of inspection areas, and the inspection images obtained from the inspection areas are compared with reference images reflecting design information, Or directly compare the inspection images with the reference information including the design information. For example, the reference information may include design information such as coordinates, size, length, shape, etc. of wirings and semiconductor elements on the printed circuit board, Defects can be detected.

Although the inspection process using the line scan camera has been described above as an example, the inspection process according to the embodiments of the present invention may be the same or similar to the inspection process using the area scan camera Can be applied.

According to the embodiments of the present invention as described above, it is possible to easily perform the inspection process for the inspection object 10 having a relatively large size using the inspection camera having the relatively small visual field range 100, In addition, the edge portions 114 of the inspection image 110 obtained from the inspection areas 20 of the inspection object 10 are excluded from the inspection, thereby making it possible to sufficiently prevent the inspection error due to the image distortion.

Particularly, considering the size of the inspection object 10 and the field of view 100 of the inspection camera, the number of inspection objects 10A and 10B constituting the basic inspection area 30 and the number of inspection areas 40 Can be set in advance so that the time and cost required for the inspection process can be greatly reduced.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that

10, 10A, 10B: semiconductor die 20: inspection area
30: basic inspection area 40: inspection area
100: Field of view 102: Effective area
104: Exclusion area 110: Inspection image
112: valid area 114: excluded area
120: Inspection image 122: Effective area
124: Exclusion zone

Claims (18)

An electronic component inspection method for inspecting an electronic component using an inspection camera having a field of view smaller than that of the electronic component,
Setting a central portion and edge portions of the visual field range as valid and excluded regions so that the size of the electronic component is a multiple of the effective region size;
Dividing the electronic component into a plurality of inspection regions having the same size, the size of the inspection regions being equal to the effective region;
Obtaining a plurality of inspection images each including valid areas corresponding to the inspection areas using the inspection camera; And
And comparing the valid areas of the inspection images with reference information to detect defects of the electronic component. delete The electronic component inspection method according to claim 1, wherein a line scan camera is used as said inspection camera. The electronic component inspection method according to claim 3, wherein the exclusion areas correspond to both side edges of the visual field range perpendicular to the scan direction of the line scan camera. The electronic component inspection method according to claim 1, wherein the reference information includes reference images or design information of the electronic component. 6. The electronic device according to claim 5, wherein the comparison of the valid areas of the inspection images with the reference images is performed by a difference operation between the pixel gray levels of the valid areas and the pixel gray levels of the reference images. method of inspection. The method of claim 6, further comprising generating an inspection result image using the result of the difference operation. 7. The method according to claim 6, further comprising detecting a pixel corresponding to a result value out of an error range among the result values of the difference operation as a defect and calculating coordinates for the detected defect How to inspect parts. The method according to claim 5, wherein the comparison of the effective regions of the inspection images with the reference images is performed by a difference operation between the color information of each of the pixels of the effective regions and the color information of each of the pixels of the reference images. Electronic component inspection method. CLAIMS 1. A semiconductor die inspection method for inspecting semiconductor dies using an inspection camera having a field of view smaller than that of each semiconductor die formed on a wafer,
Setting one or more semiconductor dies as a base inspection area;
Dividing the basic inspection area into a plurality of inspection areas having the same size;
Obtaining inspection images for the inspection areas; And
Comparing the test images with reference images to detect defects in the one or more semiconductor dies,
Wherein the size of the inspection areas is set to be smaller than the field of view of the inspection camera, each inspection image includes a valid area corresponding to each inspection area and other exclusion areas, and the reference images are valid Regions of the semiconductor die. delete 11. The method of claim 10, wherein a line scan camera is used as the inspection camera. 13. The method of claim 12, wherein the exclusion zones correspond to both side edges of the field of view perpendicular to the scan direction of the line scan camera. 13. The method of claim 12, wherein one semiconductor die is set as the basic inspection area when the width of the two semiconductor dies divided by the scan width of the line scan camera is an even number, And the inspection area is set as the inspection area. 11. The method of claim 10, wherein the valid regions of the test images are compared with the reference images, and the defects are detected by a difference operation between pixel gray levels of the valid regions and pixel gray levels of the reference images Wherein the semiconductor die inspection method is a semiconductor die inspection method. 16. The method of claim 15, further comprising generating an inspection result image using the result of the difference operation. 16. The semiconductor memory device according to claim 15, further comprising a step of detecting a pixel corresponding to a result value out of an error range among the result values of the difference operation as a defect and displaying the detected defect on a wafer map Die inspection method. 11. The method according to claim 10, wherein valid areas of the inspection images are compared with the reference images, and the defects are detected by a difference operation between color information of each of the pixels of the valid areas and color information of each of the pixels of the reference images Wherein the semiconductor die is a semiconductor die.
KR1020150076706A 2015-05-29 2015-05-29 Method of inspecting electronic components KR101702752B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150076706A KR101702752B1 (en) 2015-05-29 2015-05-29 Method of inspecting electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150076706A KR101702752B1 (en) 2015-05-29 2015-05-29 Method of inspecting electronic components

Publications (2)

Publication Number Publication Date
KR20160140276A KR20160140276A (en) 2016-12-07
KR101702752B1 true KR101702752B1 (en) 2017-02-03

Family

ID=57573482

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150076706A KR101702752B1 (en) 2015-05-29 2015-05-29 Method of inspecting electronic components

Country Status (1)

Country Link
KR (1) KR101702752B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230083172A (en) 2021-12-02 2023-06-09 세메스 주식회사 Semiconductor material inspection device and semiconductor material inspection method using the same
KR20230087119A (en) 2021-12-09 2023-06-16 세메스 주식회사 Semiconductor material inspection device and semiconductor material inspection method using the same
KR20230094912A (en) 2021-12-21 2023-06-28 세메스 주식회사 Semiconductor material inspection device and semiconductor material inspection method using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000146542A (en) 1998-11-13 2000-05-26 Tokyo Seimitsu Co Ltd Noncontact surface shape measuring device
JP2008032564A (en) * 2006-07-28 2008-02-14 Dainippon Printing Co Ltd Inspection method, inspection device, inspection processing system, and processing device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3685522B2 (en) * 1995-06-16 2005-08-17 株式会社トーカイ Equipment for inspecting sheets for defects
JP2007149837A (en) * 2005-11-25 2007-06-14 Tokyo Seimitsu Co Ltd Device, system, and method for inspecting image defect

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000146542A (en) 1998-11-13 2000-05-26 Tokyo Seimitsu Co Ltd Noncontact surface shape measuring device
JP2008032564A (en) * 2006-07-28 2008-02-14 Dainippon Printing Co Ltd Inspection method, inspection device, inspection processing system, and processing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230083172A (en) 2021-12-02 2023-06-09 세메스 주식회사 Semiconductor material inspection device and semiconductor material inspection method using the same
KR20230087119A (en) 2021-12-09 2023-06-16 세메스 주식회사 Semiconductor material inspection device and semiconductor material inspection method using the same
KR20230094912A (en) 2021-12-21 2023-06-28 세메스 주식회사 Semiconductor material inspection device and semiconductor material inspection method using the same

Also Published As

Publication number Publication date
KR20160140276A (en) 2016-12-07

Similar Documents

Publication Publication Date Title
US8073236B2 (en) System and method for detecting blemishes on image sensor package
US11144778B2 (en) Descriptor guided fast marching method for analyzing images and systems using the same
US8339449B2 (en) Defect monitoring in semiconductor device fabrication
CN103346104B (en) A kind of chip defect detection method
US8184899B2 (en) Method of detecting a defect on an object
WO2010013612A1 (en) Circuit pattern examining apparatus and circuit pattern examining method
KR101702752B1 (en) Method of inspecting electronic components
US11321811B2 (en) Imaging apparatus and driving method of the same
WO2012067041A1 (en) Method for inspecting foreign material on substrate and apparatus for inspecting foreign material on substratrate
KR101602580B1 (en) Method of inspecting a wafer
KR20120105149A (en) Method and apparatus for automatic optical inspection of flat panel substrate
JP2009097928A (en) Defect inspecting device and defect inspection method
JP2008071853A (en) Inspection method for mounting state of electronic component
KR101199619B1 (en) Method of forming a wafer map
KR20080002044A (en) Method of setting an inspection area
KR100774826B1 (en) Method for detecting the defect of wafer
JP2013117490A (en) Inspection system and method for setting recipe
US7079966B2 (en) Method of qualifying a process tool with wafer defect maps
US8059886B2 (en) Adaptive signature detection
CN113643995A (en) Detection method and device
KR101561785B1 (en) Method of forming a wafer map
KR102446956B1 (en) Method of detecting image noise of camera
JP2014211417A (en) Pattern inspection device and pattern inspection method
KR100546796B1 (en) Method for inspecting an insulator with a library of optic image
KR102350548B1 (en) Method of inspecting a wafer

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right