CN113643995A - Detection method and device - Google Patents
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Abstract
The application discloses a detection method and a detection device, wherein the method comprises the following steps: placing a test wafer into an ion implantation machine, and performing ion implantation on the test wafer; after the ion implantation, acquiring a color image of the test wafer; and judging the ion implantation condition of the test wafer according to the color image of the test wafer. According to the detection method, the color image of the test wafer is obtained, whether the ion implantation condition of the test wafer is normal or not can be accurately judged based on the color characteristics reflected by the color image, the operation is simple, the detection efficiency is improved, timely early warning can be achieved, the permanent damage of the test wafer caused by untimely detection is avoided, and the product yield is improved.
Description
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a detection method and apparatus.
Background
With the continuous development of semiconductor technology, ion implantation technology plays an increasingly important role in integrated circuit manufacturing. Ion implantation, which is a technique for doping a region near the surface of a semiconductor, is a critical step in the front-end of the integrated circuit fabrication process and is aimed at changing the carrier concentration and conductivity type of the semiconductor.
After ion implantation is completed, electrical inspection of the device is often required to determine the ion implantation condition. However, the electrical detection method commonly used in the industry has a long detection period and is difficult to perform early warning on abnormal conditions in time, or has a complex detection means and is difficult to detect large-scale devices, so that the detection efficiency is low.
Disclosure of Invention
In view of this, the embodiments of the present application provide a detection method and apparatus to solve at least one technical problem in the prior art.
In order to achieve the purpose, the technical scheme of the application is realized as follows:
a first aspect of an embodiment of the present application provides a detection method, where the method includes:
placing a test wafer into an ion implantation machine, and performing ion implantation on the test wafer;
after the ion implantation, acquiring a color image of the test wafer;
and judging the ion implantation condition of the test wafer according to the color image of the test wafer.
Optionally, the acquiring a color image of the test wafer includes:
and acquiring a color image of the test wafer based on an image sensor RGBC.
Optionally, the determining, according to the color image, an ion implantation condition of the test wafer includes:
comparing the color image of the test wafer with the color image of the standard wafer;
and judging the ion implantation condition of the test wafer according to the comparison result.
Optionally, the determining the ion implantation condition of the test wafer according to the comparison result includes:
if the color features of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal;
and if the color features of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal.
Optionally, the placing the test wafer into an ion implantation machine, and performing ion implantation on the test wafer includes:
placing a test wafer into an ion implantation machine, and performing regional ion implantation on the test wafer;
the ion implantation parameters corresponding to each region on the test wafer are different.
Optionally, the determining, according to the color image, an ion implantation condition of the test wafer includes:
acquiring color characteristics corresponding to each area on the color image of the test wafer;
comparing the color characteristics corresponding to each region;
and judging whether the test wafer is subjected to the regional ion implantation according to the comparison result.
Optionally, the determining whether the test wafer has been subjected to the split-region ion implantation according to the comparison result includes:
if the color characteristics corresponding to each region are different, judging that the test wafer is subjected to the regional ion implantation;
and if the color characteristics corresponding to each region are the same, judging that the test wafer is not subjected to the regional ion implantation.
Optionally, the determining, according to the color image, an ion implantation condition of the test wafer includes:
acquiring color characteristics corresponding to each area on the color image of the test wafer;
aiming at each region, acquiring corresponding standard color characteristics from a preset database according to the ion implantation parameters of the region; comparing the color feature to the standard color feature; and judging the ion implantation condition of the region according to the comparison result.
Optionally, the determining the ion implantation condition of the region according to the comparison result includes:
for each region, if the color feature corresponding to the region is different from the standard color feature, judging that the ion implantation condition of the region is abnormal;
and for each region, if the color feature corresponding to the region is the same as the standard color feature, judging that the ion implantation condition of the region is normal.
Optionally, the ion implantation parameters include at least one of: ion implantation angle, ion implantation energy, ion implantation element, and ion implantation concentration.
A second aspect of the embodiments of the present application provides a detection apparatus, including:
the ion implantation module is used for carrying out ion implantation on the test wafer;
the acquisition module is used for acquiring a color image of the test wafer after the ion implantation;
and the judging module is used for judging the ion implantation condition of the test wafer according to the color image of the test wafer.
Optionally, the obtaining module is specifically configured to:
and acquiring a color image of the test wafer based on an image sensor RGBC.
Optionally, the determining module is specifically configured to:
comparing the color image of the test wafer with the color image of the standard wafer;
and judging the ion implantation condition of the test wafer according to the comparison result.
Optionally, the determining module is specifically configured to:
if the color features of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal;
and if the color features of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal.
Optionally, the ion implantation module is configured to:
placing a test wafer into an ion implantation machine, and performing regional ion implantation on the test wafer;
the ion implantation parameters corresponding to each region on the test wafer are different.
Optionally, the determining module is specifically configured to:
acquiring color characteristics corresponding to each area on the color image of the test wafer;
comparing the color characteristics corresponding to each region;
and judging whether the test wafer is subjected to the regional ion implantation according to the comparison result.
Optionally, the determining module is specifically configured to:
if the color characteristics corresponding to each region are different, judging that the test wafer is subjected to the regional ion implantation;
and if the color characteristics corresponding to each region are the same, judging that the test wafer is not subjected to the regional ion implantation.
Optionally, the determining module is specifically configured to: acquiring color characteristics corresponding to each area on the color image of the test wafer;
aiming at each region, acquiring corresponding standard color characteristics from a preset database according to the ion implantation parameters of the region; comparing the color feature to the standard color feature; and judging the ion implantation condition of the region according to the comparison result.
Optionally, the determining module is specifically configured to:
for each region, if the color feature corresponding to the region is different from the standard color feature, judging that the ion implantation condition of the region is abnormal;
and for each region, if the color feature corresponding to the region is the same as the standard color feature, judging that the ion implantation condition of the region is normal.
Optionally, the ion implantation parameters include at least one of: ion implantation angle, ion implantation energy, ion implantation element, and ion implantation concentration.
The application discloses a detection method and a detection device, wherein the method comprises the following steps: placing a test wafer into an ion implantation machine, and performing ion implantation on the test wafer; after the ion implantation, acquiring a color image of the test wafer; and judging the ion implantation condition of the test wafer according to the color image of the test wafer. According to the detection method, the color image of the test wafer is obtained, whether the ion implantation condition of the test wafer is normal or not can be accurately judged based on the color characteristics reflected by the color image, the operation is simple, the detection efficiency is improved, timely early warning can be achieved, the permanent damage of the test wafer caused by untimely detection is avoided, and the product yield is improved.
Drawings
Fig. 1 is a schematic flowchart of a detection method according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram illustrating region division of a test wafer according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of color features of a feature database provided in an embodiment of the present application;
fig. 4 is a schematic diagram illustrating standard color characteristics corresponding to ions of different concentrations implanted into different regions of a test wafer according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a detection apparatus according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Currently, in a semiconductor process, after ion implantation is completed, electrical detection is often required to be performed on a device to determine the ion implantation condition. However, the electrical testing method commonly used in the industry has a long testing period and is difficult to perform early warning on the abnormal condition of ion implantation, for example, a Wafer Acceptance Test (WAT) is to perform electrical testing on various Test structures on a Wafer after the Wafer completes all process steps; or the detection means is complex, and the detection of large-scale devices is difficult to realize, so that the detection efficiency is low.
Based on this, the following examples of the present application are proposed.
Referring to fig. 1, fig. 1 is a schematic flow chart of a detection method according to an embodiment of the present disclosure. A first aspect of an embodiment of the present application provides a detection method, where the method includes:
s101, placing the test wafer into an ion implantation machine, and performing ion implantation on the test wafer.
The basic principle of ion implantation is: the ion beam with high energy is incident into the material, and the ion beam and atoms or molecules in the material generate a series of physical and chemical interactions, so that the incident ions gradually lose energy and finally stay in the material, and the surface composition, structure and performance of the material are changed, so that the surface performance of the material is optimized, or certain new excellent performance is obtained.
In the present embodiment, the ion implanter performs ion implantation on the test wafer by using an ion beam with a predetermined energy (e.g., an energy of 60 keV), so as to change the electrical property of the test wafer. Here, ion implantation may be performed on a plurality of test wafers at the same time, and the specific number may be determined according to the performance or actual requirements of the ion implantation equipment.
S102, after ion implantation, obtaining a color image of the test wafer.
In the present embodiment, a color image of the test wafer is acquired based on the image sensors rgbc (red green blue and clear). The image sensor RGBC is a device in which photodiodes, amplifiers, analog circuits, digital circuits, and the like are integrated into a single CMOS chip, and thus has a function of detecting light of different colors such as red, green, blue, and transparent.
Specifically, after ion implantation of each test wafer is completed, image information of the test wafer is obtained through the image sensor RGBC, the image information is sent to the special image processing system, the image processing system converts the image information into digital information according to information such as pixel distribution and brightness in the image information, color features are extracted from the digital information through operation, and then a color image of the test wafer is obtained. Here, the color feature may include four color pixels Red (Red), Green (Green), Blue (Blue), and Clear (transparent color). The color characteristics are related to the total amount of ions implanted per unit area, i.e., ion concentration. The color characteristics of regions of the test wafer having different ion concentrations may exhibit differences.
Under the same process, because the ion implantation parameters corresponding to each wafer are consistent, the color change of the acquired image is theoretically absent or small. Under different processes, because the ion implantation parameters corresponding to each wafer are different, the acquired image has different color changes, and particularly, when the ion implantation of the test wafer is abnormal, the color and the brightness of the test wafer image have obvious changes.
In this embodiment, the ion implantation abnormality may include a failure of the ion implantation tool to implant ions into the wafer, a mismatch between the ion implantation parameters and the predetermined values (e.g., a mismatch between the ion implantation energy, the ion implantation elements, and the ion implantation concentration) and a mismatch between the ion implantation parameters and the predetermined values). The ion implantation defects are represented as a large number of defects caused by atomic displacement due to collision with atoms inside the wafer during ion implantation, and when the ion implantation dosage is large, the defects are overlapped and interact with each other to generate more complex defects, so that the ion implantation quantity at the defect structure is too large or too small to achieve the expected effect.
And S103, judging the ion implantation condition of the test wafer according to the color image of the test wafer.
In this embodiment, the color image of the test wafer is compared with the color image of the standard wafer, and the ion implantation condition of the test wafer is determined according to the comparison result. If the color image of the test wafer is the same as the color feature of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal; and if the color features of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal. Here, the color image of the standard wafer may be a color image of a test wafer on which ion implantation has been performed before and which is well implanted. It can be understood that, at the defect structure on the wafer, the electrical abnormality at the position may be caused by too many or too few ions, and similarly, when the ion implantation machine fails and does not perform ion implantation on the wafer or the ion implantation parameters do not meet the preset values, the electrical abnormality caused by too many or too few ions may also occur, so that when the color image is obtained by using the image sensor RGBC, the color feature shown at the position may be obviously different from other adjacent positions, and thus, the ion implantation condition abnormality of the test wafer may be determined.
This application carries out ion implantation through placing the test wafer in the ion implantation board, acquire the color image of test wafer, according to the color image of test wafer, judge the ion implantation condition of test wafer, thereby can judge accurately whether the ion implantation condition of test wafer is normal, and easy operation has improved detection efficiency, and accomplish the ion implantation back at each test wafer, carry out electrical property detection to the test wafer immediately, when the ion implantation condition of test wafer appears unusually, accomplish timely early warning, avoid appearing because detect the untimely condition that causes the unable timely correction of test wafer, improve the product yield.
In some embodiments, the test wafer is placed in an ion implantation machine, and the test wafer is subjected to the ion implantation in different regions. Here, the ion implantation parameters are different for each region on the test wafer. The ion implantation parameters may include at least one of: ion implantation energy, ion implantation elements, and ion implantation concentration.
For example, the ion implantation concentration is taken as an example for explanation. Referring to fig. 2, fig. 2 is a schematic view illustrating the area division of a test wafer; the ion implantation machine can control the concentration of ions implanted into different areas of the test wafer, wherein the test wafer is divided into three different areas, namely a first area, a second area and a third area, wherein the concentration of the implanted ions in the first area is 5 multiplied by 1014/cm2The ion concentration of the second region is 1 × 1015/cm2The third region has an ion concentration of 2 × 1015/cm2。
After ion implantation is completed, a color image of the test wafer can be acquired based on the image sensor RGBC. Specifically, color features corresponding to each region on a color image of the test wafer are obtained, the color features corresponding to each region are compared, and whether the test wafer is subjected to the regional ion implantation or not is judged according to the comparison result. If the color characteristics corresponding to each region are different, namely the colors of the first region, the second region and the third region in the obtained color image are different or partially different, the wafer to be tested can be judged to be subjected to regional ion implantation; if the color characteristics corresponding to each region are the same, that is, the colors of the first region, the second region and the third region in the obtained color image are the same, it can be determined that the test wafer is not subjected to the regional ion implantation. It should be noted that, before the ion implantation operation is performed, the ion concentration of each region on the test wafer is the same, i.e., the initial color characteristics are the same.
In one embodiment, the color feature corresponding to each region on the color image of the test wafer is obtained, for each region, the corresponding standard color feature is obtained from the preset database according to the ion implantation parameter of the region, the color feature is compared with the standard color feature, and the ion implantation condition of the region is judged according to the comparison result.
Illustratively, the ion implantation concentration is taken as an example for explanation, and according to big data analysis of historical test data, color features corresponding to different ion concentration ranges, namely standard color features, are determined, and based on the standard color features, a feature database is established. As shown in fig. 3, fig. 3 is a schematic diagram of color characteristics of a characteristic database provided in an embodiment of the present application. Based on a common ion concentration, e.g. 1X 1015/cm2Establishing a characteristic database, dividing the range into a plurality of concentration ranges, such as 49% -62%, 62% -75%, 75% -88%, … … 177% -189%, 189% -202%, by 13% concentration gradient, wherein each concentration range corresponds to different color characteristics, and 50% of the concentration ranges corresponds to 5 × 10 ion concentration14/cm 2100% corresponds to an ion concentration of 1X 1015/cm2200% corresponds to an ion concentration of 2X 1015/cm2。
Controlling the concentration of ions implanted into different regions of the test wafer by an ion implantation machine, wherein the concentration of the implanted ions corresponding to the first region is 5 × 1014/cm2The ion concentration of the second region is 1 × 1015/cm2The third region has an ion concentration of 2 × 1015/cm2. And after ion implantation is finished, acquiring the color characteristic corresponding to each area on the color image of the test wafer. Illustratively, the first region exhibits a color characteristic of a first color, the second region exhibits a color characteristic of a second color, and the third region exhibits a color characteristic of a third color.
In one example, referring to fig. 4, fig. 4 is a schematic diagram illustrating standard color characteristics corresponding to different concentrations of ions implanted into different regions of a test wafer according to an embodiment of the present disclosure. Based on the ion concentrations implanted into the respective regions, the feature database is queried, and standard color features corresponding to the ion concentrations implanted into the respective first, second, and third regions, for example, a first standard color feature, a second standard color feature, and a third standard color feature in this order, can be obtained.
In this embodiment, for each region, if the color feature corresponding to the region is different from the standard color feature, it is determined that the ion implantation condition of the region is abnormal; and for each region, if the color feature corresponding to the region is the same as the standard color feature, judging that the ion implantation condition of the region is normal.
Specifically, when the color image is acquired by using the image sensor RGBC, when the test wafer is abnormal in ion implantation, the test wafer may show a color characteristic different from that of a normal ion implantation wafer because the number of ions is too large or too small, and based on this, the abnormality of the ion implantation condition of the test wafer may be determined based on the color characteristic of the test wafer and the standard color characteristic. And if the first color feature expressed by the first area on the color image of the test wafer is the same as the first standard color feature, the second color feature expressed by the second area is the same as the second standard color feature, and the third color feature expressed by the third area is the same as the third standard color feature, judging that the ion implantation condition of each area is normal. If the color feature expressed by a certain region does not accord with the standard color feature in the preset database, the ion implantation condition of the region is judged to be abnormal, and the feature database can be further inquired according to the color feature expressed by the certain region to determine the actual ion concentration of the region, so that the ion implantation concentration can be determined to be larger or smaller.
According to the embodiment, the regional ion implantation is performed on the test wafer, the color features corresponding to each region on the color image of the test wafer are obtained, the color features corresponding to each region are compared respectively, so that whether the regional ion implantation is performed on the test wafer can be judged, the color features corresponding to each region are compared with the standard color features in the feature database, the actual ion implantation condition of each region is judged, the method is accurate, reliable, convenient and fast, suitable for batch processing of the test wafer, the test efficiency is improved, timely early warning can be achieved, permanent damage to the test wafer caused by untimely detection is avoided, and the product yield is improved.
Based on the same technical concept of the foregoing detection method, an embodiment of the present application provides a detection apparatus, including:
the ion implantation module 501 is configured to place a test wafer into an ion implantation machine, and perform ion implantation on the test wafer.
In this embodiment, the ion implantation is performed on the test wafer by the ion implanter to change the electrical property of the test wafer. Here, ion implantation may be performed on a plurality of test wafers at the same time, and the specific number may be determined according to the performance or actual requirements of the ion implantation equipment.
The obtaining module 502 is configured to obtain a color image of the test wafer after the ion implantation.
In the present embodiment, a color image of the test wafer is acquired based on the image sensor RGBC. The image sensor RGBC is a device in which photodiodes, amplifiers, analog circuits, digital circuits, and the like are integrated into a single CMOS chip, and thus has a function of detecting light of different colors such as red, green, blue, and transparent.
Specifically, after ion implantation of each test wafer is completed, image information of the test wafer is obtained through the image sensor RGBC, the image information is sent to the special image processing system, the image processing system converts the image information into digital information according to information such as pixel distribution and brightness in the image information, color features are extracted from the digital information through operation, and then a color image of the test wafer is obtained. Here, the color feature may include four color pixels Red (Red), Green (Green), Blue (Blue), and Clear (transparent color). The color characteristics are related to the total amount of ions implanted per unit area, i.e., ion concentration. The color characteristics of regions of the test wafer having different ion concentrations may exhibit differences.
Under the same process, because the ion implantation parameters corresponding to each wafer are consistent, the acquired image has no color change or little color change. Under different processes, because the ion implantation parameters corresponding to each wafer are different, the acquired image has different color changes, and particularly, when the ion implantation of the test wafer is abnormal, the color and the brightness of the test wafer image have obvious changes.
The determining module 503 is configured to determine an ion implantation condition of the test wafer according to the color image of the test wafer.
In this embodiment, the color image of the test wafer is compared with the color image of the standard wafer, and the ion implantation condition of the test wafer is determined according to the comparison result. If the color image of the test wafer is the same as the color feature of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal; and if the color features of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal. Here, the color image of the standard wafer may be a color image of a test wafer on which ion implantation has been performed before and which is well implanted.
This application carries out ion implantation through placing the test wafer in the ion implantation board after, acquire the color image of test wafer, according to the color image of test wafer, judge the ion implantation condition of test wafer, thereby can judge accurately whether the ion implantation condition of test wafer is normal, and easy operation has improved detection efficiency, and accomplish the ion implantation back at each test wafer, carry out electrical property detection to the test wafer immediately, when the ion implantation condition of test wafer appears unusually, accomplish timely early warning, avoid because detect untimely, cause the permanent damage of test wafer, the product yield has been improved.
In one embodiment, the ion implantation module 501 is used to perform a split-zone ion implantation on a test wafer. The ion implantation parameters corresponding to each region on the test wafer are different. Here, the ion implantation parameters may include at least one of: ion implantation energy, ion implantation elements, and ion implantation concentration. For a specific example, please refer to the above method embodiments, which are not described in detail herein.
After ion implantation is completed, a color image of the test wafer can be acquired based on the image sensor RGBC. Specifically, color features corresponding to each region on a color image of the test wafer are obtained, the color features corresponding to each region are compared, and whether the test wafer is subjected to the regional ion implantation or not is judged according to the comparison result. If the color characteristics corresponding to each region are different, it can be determined that the test wafer has undergone regional ion implantation; if the color characteristics corresponding to each region are the same, it can be determined that the test wafer is not subjected to the regional ion implantation. It should be noted that, before the ion implantation operation is performed, the ion concentration of each region on the test wafer is the same, i.e., the color characteristics are the same.
In one embodiment, the determining module is specifically configured to obtain a color feature corresponding to each region on the color image of the test wafer.
And aiming at each region, acquiring corresponding standard color characteristics from a preset database according to the ion implantation parameters of the region. And comparing the color characteristic with the standard color characteristic, and judging the ion implantation condition of the region according to the comparison result.
In this embodiment, for each region, if the color feature corresponding to the region is different from the standard color feature, it is determined that the ion implantation condition of the region is abnormal; and if the color characteristic corresponding to the region is the same as the standard color characteristic, judging that the ion implantation condition of the region is normal.
Specifically, if the color feature expressed by a certain region does not match the standard color feature in the preset database, it is determined that the ion implantation condition of the region is abnormal, for example, the feature database may be queried according to the color feature expressed by the region, and the actual ion concentration of the region may be determined, so that it may be determined that the ion implantation concentration is larger or smaller.
The device that this embodiment provided, through carrying out subregion ion implantation to the test wafer, acquire the color characteristic that every region corresponds on the color detection color image of test wafer, compare the color characteristic that every region corresponds respectively, thereby can judge whether the test wafer has carried out subregion ion implantation, and compare the color characteristic that every region corresponds and the standard color characteristic in the characteristic database, judge the actual ion implantation condition in each region, it is accurate reliable, high convenience and fastness, be fit for handling a large amount of test wafers, the efficiency of software testing is improved, and can accomplish timely early warning, avoid because detect untimely, cause the permanent damage of test wafer, the product yield has been improved. For a specific example, please refer to the above method embodiments, which are not described in detail herein.
The methods disclosed in the several method embodiments provided in the present application may be combined arbitrarily without conflict to obtain new method embodiments.
Features disclosed in several of the product embodiments provided in the present application may be combined in any combination to yield new product embodiments without conflict.
The features disclosed in the several method or apparatus embodiments provided in this application may be combined in any combination to arrive at new method embodiments or apparatus embodiments without conflict.
In the several embodiments provided in the present application, it should be understood that the disclosed method and apparatus may be implemented in other ways. The above-described device embodiments are merely illustrative, for example, the division of the modules is only one logical functional division, and other division manners may be implemented in practice, such as: multiple modules or components may be combined, or may be integrated into another system, or some features may be omitted, or not implemented. In addition, the coupling, direct coupling or communication connection between the components shown or discussed may be through some interfaces, and the indirect coupling or communication connection between the devices or modules may be electrical, mechanical or other forms.
The modules described as separate parts may or may not be physically separate, and parts displayed as modules may or may not be physical units, that is, may be located in one place, or may be distributed on a plurality of network modules; some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, all functional modules in the embodiments of the present application may be integrated into one processing module, or each module may be separately used as one module, or two or more modules may be integrated into one module; the integrated module can be realized in a hardware form, and can also be realized in a form of hardware and a software functional module.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (20)
1. A method of detection, comprising:
placing a test wafer into an ion implantation machine, and performing ion implantation on the test wafer;
after the ion implantation, acquiring a color image of the test wafer;
and judging the ion implantation condition of the test wafer according to the color image of the test wafer.
2. The method of claim 1, wherein the obtaining a color image of the test wafer comprises:
and acquiring a color image of the test wafer based on an image sensor RGBC.
3. The method of claim 1, wherein the determining the ion implantation condition of the test wafer according to the color image of the test wafer comprises:
comparing the color image of the test wafer with the color image of the standard wafer;
and judging the ion implantation condition of the test wafer according to the comparison result.
4. The method of claim 3, wherein the determining the ion implantation condition of the test wafer according to the comparison result comprises:
if the color features of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal;
and if the color features of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal.
5. The method of claim 1, wherein placing the test wafer into an ion implanter for ion implantation of the test wafer comprises:
placing a test wafer into an ion implantation machine, and performing regional ion implantation on the test wafer;
the ion implantation parameters corresponding to each region on the test wafer are different.
6. The method of claim 5, wherein the determining the ion implantation condition of the test wafer according to the color image of the test wafer comprises:
acquiring color characteristics corresponding to each area on the color image of the test wafer;
comparing the color characteristics corresponding to each region;
and judging whether the test wafer is subjected to the regional ion implantation according to the comparison result.
7. The method of claim 6, wherein said determining whether the test wafer has been subjected to the split-zone ion implantation according to the comparison result comprises:
if the color characteristics corresponding to each region are different, judging that the test wafer is subjected to the regional ion implantation;
and if the color characteristics corresponding to each region are the same, judging that the test wafer is not subjected to the regional ion implantation.
8. The method of claim 5, wherein said determining the ion implantation condition of the test wafer according to the color image comprises:
acquiring color characteristics corresponding to each area on the color image of the test wafer;
aiming at each region, acquiring corresponding standard color characteristics from a preset database according to the ion implantation parameters of the region; comparing the color feature to the standard color feature; and judging the ion implantation condition of the region according to the comparison result.
9. The method of claim 8, wherein determining the ion implantation condition of the region according to the comparison result comprises:
for each region, if the color feature corresponding to the region is different from the standard color feature, judging that the ion implantation condition of the region is abnormal;
and for each region, if the color feature corresponding to the region is the same as the standard color feature, judging that the ion implantation condition of the region is normal.
10. The method of claim 5,
the ion implantation parameters include at least one of: ion implantation angle, ion implantation energy, ion implantation element, and ion implantation concentration.
11. A detection device, the device comprising:
the ion implantation module is used for carrying out ion implantation on the test wafer;
the acquisition module is used for acquiring a color image of the test wafer after the ion implantation;
and the judging module is used for judging the ion implantation condition of the test wafer according to the color image of the test wafer.
12. The apparatus of claim 11, wherein the obtaining module is specifically configured to:
and acquiring a color image of the test wafer based on an image sensor RGBC.
13. The apparatus according to claim 11, wherein the determining module is specifically configured to:
comparing the color image of the test wafer with the color image of the standard wafer;
and judging the ion implantation condition of the test wafer according to the comparison result.
14. The apparatus of claim 13, wherein the determining module is specifically configured to:
if the color features of the color image of the test wafer are the same as those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is normal;
and if the color features of the color image of the test wafer are different from those of the color image of the standard wafer, judging that the ion implantation condition of the test wafer is abnormal.
15. The apparatus of claim 11, wherein the ion implantation module is further configured to:
carrying out regional ion implantation on the test wafer;
the ion implantation parameters corresponding to each region on the test wafer are different.
16. The apparatus of claim 15, wherein the determining module is specifically configured to:
acquiring color characteristics corresponding to each area on the color image of the test wafer;
comparing the color characteristics corresponding to each region;
and judging whether the test wafer is subjected to the regional ion implantation according to the comparison result.
17. The apparatus of claim 16, wherein the determining module is specifically configured to:
if the color characteristics corresponding to each region are different, judging that the test wafer is subjected to the regional ion implantation;
and if the color characteristics corresponding to each region are the same, judging that the test wafer is not subjected to the regional ion implantation.
18. The apparatus of claim 15, wherein the determining module is specifically configured to: acquiring color characteristics corresponding to each area on the color image of the test wafer;
aiming at each region, acquiring corresponding standard color characteristics from a preset database according to the ion implantation parameters of the region; comparing the color feature to the standard color feature; and judging the ion implantation condition of the region according to the comparison result.
19. The apparatus of claim 18, wherein the determining module is specifically configured to:
for each region, if the color feature corresponding to the region is different from the standard color feature, judging that the ion implantation condition of the region is abnormal;
and for each region, if the color feature corresponding to the region is the same as the standard color feature, judging that the ion implantation condition of the region is normal.
20. The apparatus of claim 15, wherein the ion implantation parameters comprise at least one of: ion implantation angle, ion implantation energy, ion implantation element, and ion implantation concentration.
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