CN101090083A - Chip detection method - Google Patents
Chip detection method Download PDFInfo
- Publication number
- CN101090083A CN101090083A CN 200610027587 CN200610027587A CN101090083A CN 101090083 A CN101090083 A CN 101090083A CN 200610027587 CN200610027587 CN 200610027587 CN 200610027587 A CN200610027587 A CN 200610027587A CN 101090083 A CN101090083 A CN 101090083A
- Authority
- CN
- China
- Prior art keywords
- chip
- subregion
- wafer
- gray value
- optical imagery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
This invention discloses a test method for wafers including: utilizing an optical process unit in an AVI tool to get an optical image of a wafer, carrying out grey computation to the image and dividing it to several zones, selecting a subarea standard chip, finally, carrying out contrast of grey values to other chips in different areas with the standard one to test defect chips, in which, the mode of partition is decided according to the state of products, a subarea can be any area in the image and the standard chip may be one existing in the chip or a virtual chip model got by the AVI tool, and a judgment standard should be designed in advance before contrasting grey values.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of chip detection method.
Background technology
In manufacture of semiconductor, mainly determine wafer defect, and follow up the reason that defective produces, and then improve production procedure by optical detective technology, improve the product yield.Obviously, wafer inspection is an important step in the actual production process.Application number is mentioned in the Chinese patent application of " 98115227.9 ", in semiconductor fabrication process, adopts automated process to detect wafer defect more.
Fig. 1 is a prior art automated visual inspection schematic flow sheet, and as shown in Figure 1, the concrete steps of automated visual inspection in the prior art comprise:
Step 11: utilize optical treatment unit in the AVI instrument to obtain the optical imagery of wafer.The smallest standalone unit of wafer optical imagery is called chip (die) herein.Comprise a plurality of pixel cells in the described chip.
Fig. 2 is a wafer optical imagery schematic diagram in the prior art, and the described wafer optical imagery that obtains as shown in Figure 2.
Then, analyze automatically, handle, detect defective by the program control image processing unit of establishment in advance.
Comprise by the processing procedure of programme controlled graphics processing unit detected image:
Step 12: the optical imagery to wafer carries out gray scale calculating; Each chip (die) in the wafer optical imagery is converted into the picture element matrix with multi-stage grey scale value to be represented.
Step 13: the chip that settles the standard (golden die) 100.
Take up an official post at wafer and to get a plurality of chips, the gray value of respective pixel unit in the picture element matrix of representing described chip is averaged, obtain having the picture element matrix of each pixel cell average gray Value Data, determine that the chip that this picture element matrix is represented is a standard chips.
Fig. 3 is a standard chips schematic diagram in the prior art, and the standard chips of choosing 100 as shown in Figure 3.
Step 14: according to the gray value comparing result of the picture element matrix of representing other chip in the wafer with the picture element matrix of standard chips, if represent the interior a certain pixel cell of picture element matrix of chip or the gray value deviation of a plurality of pixel cell and the interior respective pixel unit of standard chips to exceed allowed band, judge that then this chip is a defective chip 110.Fig. 4 is a testing result schematic diagram in the prior art, and detected defective chip 110 as shown in Figure 4.
Actual production is found, because semiconductor device is in the factor of aspects such as design, layout, the nature difference that wafer central region and fringe region exist technology to allow, show as in testing process through wafer central region after the image transitions and fringe region and have color distortion, the gray value that shows as central area and fringe region then after image processing has obvious gap; And the full wafer wafer has only a standard chips, and it is that the gray scale with all chips of full wafer wafer serves as according to generating, will certainly cause the color gray value of edge or central area and the gray value of standard chips to differ bigger so, will be owing to the color distortion that regular element causes thinks it is because the color distortion that defective produces by mistake, the existence of this phenomenon very easily causes the false alarm in the testing process, originally normal chip is judged to be defective chip, causes the reduction of production efficiency and the increase of production cost.Therefore, be badly in need of a kind of detection method that can reduce error-alert degree in the automated visual inspection process.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of automatically visual inspection method,, and then enhance productivity, reduce production costs in order to the error-alert degree in the reduction automated visual inspection process.
For achieving the above object, a kind of chip detection method provided by the invention comprises:
A. utilize the optical treatment unit in automated visual inspection (AVI) instrument to obtain the wafer optical imagery;
B. the wafer optical imagery being carried out gray scale calculates and subregion;
C. determine the standard chips in each subregion;
D. other chip in the different subregions is carried out the gray value contrast with standard chips, detect defective chip.
Comprise a plurality of pixel cells in the described chip; Described chip is represented by the picture element matrix that a plurality of pixel cells constitute; The wafer optical imagery is carried out after gray scale calculates, and described picture element matrix has definite multi-stage grey scale value; The concrete mode of described subregion is determined according to product specification and process conditions; Described subregion is the arbitrary region in the wafer optical imagery; Choosing according to product specification and process conditions of described subregion internal standard chip determined; The gray value that has in order to each pixel cell in the picture element matrix of representing described subregion internal standard chip obtains by specific mathematical operation; Described specific mathematical operation is averaged for the gray value of each respective pixel unit in the picture element matrix of representative in the subregion of living in being appointed a plurality of chips of getting; Carry out to preestablish gray value permissible variation scope before the described gray value contrast; Described gray value permissible variation scope is determined by concrete product requirement and process conditions; When the gray value deviation of respective pixel unit exceeds described permissible variation scope in a certain pixel cell or a plurality of pixel cell and the standard chips in the picture element matrix of other chip in representing wafer, judge that described chip under test is a defective chip.
Compared with prior art, the present invention has the following advantages:
1., improved the accuracy of standard chips by wafer images is carried out subregion, and then to the selected respectively standard chips of the wafer images in the different subregions.
2. to the selected different standard chips of the wafer images in the different subregions, then with other chip in the different subregions respectively with its place subregion in standard chips carry out gradation data contrast to detect defective chip, reduced the error-alert degree in the testing process, and then improved production efficiency, reduced production cost.
Description of drawings
Fig. 1 is a prior art automated visual inspection schematic flow sheet;
Fig. 2 is a wafer optical imagery schematic diagram in the prior art;
Fig. 3 is a standard chips schematic diagram in the prior art;
Fig. 4 is a testing result schematic diagram in the prior art;
Fig. 5 is the automated visual inspection schematic flow sheet of the explanation embodiment of the invention;
The wafer optical imagery schematic diagram of Fig. 6 for adopting in the embodiment of the invention;
Fig. 7 is the wafer images subregion schematic diagram of explanation first embodiment of the invention;
Fig. 8 is the standard chips schematic diagram of explanation first embodiment of the invention;
Fig. 9 is the testing result schematic diagram of explanation first embodiment of the invention;
Figure 10 is the wafer images subregion schematic diagram of explanation second embodiment of the invention;
Figure 11 is the standard chips schematic diagram of explanation second embodiment of the invention;
Figure 12 is the testing result schematic diagram of explanation second embodiment of the invention;
Wherein:
100: standard chips of the prior art; 110: defective chip of the prior art;
200: subregion I; 201: subregion I internal standard chip;
202: defective chip in the subregion I; 210: subregion II;
211: subregion II internal standard chip; 212: defective chip in the subregion II;
220: subregion III; 221: subregion III internal standard chip;
222: defective chip in the subregion III; 230: subregion (I);
231: subregion (I) internal standard chip; 232: the interior defective chip of subregion (I);
240: subregion (II); 241: subregion (II) internal standard chip;
242: the interior defective chip of subregion (II); 250: subregion (III);
251: subregion (III) internal standard chip; 252: the interior defective chip of subregion (III).
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Chip detection method provided by the invention comprises: the optical imagery that obtains wafer; Described wafer optical imagery is carried out gray scale calculating and carries out subregion; Determine subregion internal standard chip; The gray value of other chip in the subregion with standard chips compared, if comparing result exceeds allowed band, then detecting described chip is defective chip.
Fig. 5 is the automated visual inspection schematic flow sheet of the explanation embodiment of the invention, and as shown in Figure 5, the automated visual inspection flow process of first embodiment of the invention is:
Step 51: utilize optical treatment unit in the AVI instrument to obtain the optical imagery of wafer, in order to realize defects detection by the graphics processing unit in the AVI instrument to wafer.The wafer optical imagery schematic diagram of Fig. 6 for adopting in the embodiment of the invention, the optical imagery that utilizes the wafer that the optical treatment unit in the AVI instrument obtains as shown in Figure 6.
Step 52: the wafer optical imagery that obtains is carried out gray scale calculate; Each chip in the wafer optical imagery is converted into the picture element matrix with multi-stage grey scale value to be represented.
Step 53: the optical imagery to wafer carries out subregion.
The concrete mode of described subregion is determined according to product specification and process conditions.
Fig. 7 is the wafer optical imagery subregion schematic diagram of explanation first embodiment of the invention, and parameters such as the diameter of described concentric annular subregion, area, number are by product specification and process conditions decision.As embodiments of the invention, described wafer optical imagery is divided into the zones of different with concentric annular distribution, is divided into three zones in the present embodiment, and described subregion I200, subregion II210, subregion III220 are as shown in Figure 7.
Step 54: determine subregion internal standard chip.
Choosing according to product specification and process conditions of described subregion internal standard chip determined.
On wafer, choose a plurality of chips in the different subregions respectively arbitrarily, analyze by gray value the picture element matrix of representing described chip, according to specific mathematical operation, for example the gray value of the respective pixel unit of the picture element matrix of representing described chip is averaged, obtain having the picture element matrix of each pixel cell average gray Value Data, determine that the chip that this picture element matrix is represented is the interior standard chips of described subregion; Certainly, also can adopt other the computational methods chip that settles the standard.Described standard chips is an in esse chip or via the virtual chip model that obtains of AVI instrument in the wafer optical imagery.Fig. 8 is the standard chips schematic diagram of explanation first embodiment of the invention, and described have different subregions interior standard chips I201, standard chips II211, standard chips III221 as shown in Figure 8.Gray value in order to respective pixel unit in the picture element matrix of representing different subregion internal standard chips can be different.
Step 55: the picture element matrix that will represent other chip in the wafer carries out the gray value contrast with the picture element matrix of standard chips, if represent the interior a certain pixel cell of picture element matrix of chip under test or the gray value deviation of a plurality of pixel cell and the interior respective pixel unit of standard chips to exceed allowed band, think that then chip under test is a defective chip.
Carry out to preestablish gray value permissible variation scope before the described gray value contrast; In order to judge comparing result, whether detection chip has defective; Described gray value permissible variation scope is determined by concrete product requirement and process conditions.
Fig. 9 is the testing result schematic diagram of explanation first embodiment of the invention, as shown in Figure 9, at subregion I200, subregion II210, chip I 201 settles the standard respectively in the subregion III220, standard chips II211, behind the standard chips III221, the picture element matrix of other chip in the representative product sheet is carried out gray value with the picture element matrix of standard chips to be contrasted, for example, chip under test is respectively the chip 202 in the subregion I200, chip 242 in the subregion II210 and the chip 222 in the subregion III220, when chip under test 202, a certain pixel cell or a plurality of pixel cell exceed allowed band with the gray value deviation of the interior respective pixel unit of standard chips in 212 and 222 the picture element matrix, then think chip under test 202,212 and 222 is defective chip.
Figure 10 is the wafer images subregion schematic diagram of explanation second embodiment of the invention, as the second embodiment of the present invention, after utilizing optical treatment unit in the AVI instrument to obtain the optical imagery of wafer, at first, the wafer optical imagery is carried out gray scale calculate, each chip in the wafer optical imagery is converted into the picture element matrix with multi-stage grey scale value represents.
Then, the optical imagery with described wafer carries out subregion; Described subregion is the strip region in the wafer optical imagery.
Described strip subregion (I) 230, subregion (II) 240, subregion (III) 250 are as shown in figure 10; Parameters such as the size of described strip subregion and number are by product specification and process conditions decision.
Subsequently, determine subregion internal standard chip.
Choosing according to product specification and process conditions of described subregion internal standard chip determined.
On wafer, choose a plurality of chips in the different subregions respectively arbitrarily, analyze by gray value the picture element matrix of representing described chip, according to specific mathematical operation, for example the gray value of the respective pixel unit of the picture element matrix of representing described chip is averaged, obtain having the picture element matrix of each pixel cell average gray Value Data, determine that the chip that this picture element matrix is represented is the interior standard chips of described subregion; Certainly, also can adopt other the computational methods chip that settles the standard.Described standard chips is an in esse chip or via the virtual chip model that obtains of AVI instrument in the wafer optical imagery.Fig. 8 is the standard chips schematic diagram of explanation first embodiment of the invention, and described different strip subregion internal standard chips (I) 231, standard chips (II) 241, standard chips (III) 251 are as shown in figure 11.Gray value in order to respective pixel unit in the picture element matrix of representing different subregion internal standard chips can be different.
At last, the picture element matrix of representing other chip in the wafer is carried out the gray value contrast with the picture element matrix of standard chips, if represent the interior a certain pixel cell of picture element matrix of chip under test or the gray value deviation of a plurality of pixel cell and the interior respective pixel unit of standard chips to exceed allowed band, think that then chip under test is a defective chip.
Carry out to preestablish gray value permissible variation scope before the described gray value contrast; In order to judge comparing result, whether detection chip has defective; Described gray value permissible variation scope is determined by concrete product requirement and process conditions.
Figure 12 is the testing result schematic diagram of explanation second embodiment of the invention, as shown in figure 12, at subregion (I) 230, chip (I) 231 settles the standard respectively in subregion (II) 240. subregions (III) 250, standard chips (II) 241, behind the standard chips (III) 251, the picture element matrix of representing other chip in the wafer is carried out the gray value contrast with the picture element matrix of standard chips, for example, chip under test is respectively the chip 232 in the subregion (I) 230, chip 252 in chip 242 in the subregion (II) 240 and the subregion (III) 250 is when chip under test 232, a certain pixel cell or a plurality of pixel cell and the gray value of the interior respective pixel unit of standard chips are then thought chip under test 232 in 242 and 252 the picture element matrix, 242 and 252 is defective chip.
Really, change the wafer optical imagery is carried out that gray scale is calculated and the order of subregion does not influence the enforcement of the inventive method.Described order of the wafer optical imagery being carried out gray scale calculating and subregion is calculated back subregion for carrying out densitometer earlier; Perhaps first subregion, after carry out densitometer and calculate.
Adopt method provided by the invention, by the wafer optical imagery is carried out subregion, and then, improved the accuracy of standard chips the different subregions chip that settles the standard respectively; Simultaneously, by with other chip in the different subregions respectively with its place subregion in standard chips carry out gradation data contrast to detect defective, reduced the error-alert degree in the testing process, and then improved production efficiency, reduced production cost.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (14)
1. a chip detection method is characterized in that, comprising:
A. utilize the optical treatment unit in automated visual inspection (AVI) instrument to obtain the wafer optical imagery;
B. the wafer optical imagery being carried out gray scale calculates and subregion;
C. determine the standard chips in each subregion;
D. other chip in the different subregions is carried out the gray value contrast with standard chips, detect defective chip.
2. method according to claim 1 is characterized in that: comprise a plurality of pixel cells in the described chip.
3. method according to claim 2 is characterized in that: described chip is represented by the picture element matrix that a plurality of pixel cells constitute.
4. method according to claim 3 is characterized in that: after the wafer optical imagery was carried out gray scale calculating, described picture element matrix had definite multi-stage grey scale value.
5. method according to claim 1 is characterized in that: the concrete mode of described subregion is determined according to product specification and process conditions.
6. method according to claim 5 is characterized in that: described subregion is the arbitrary region in the wafer optical imagery.
7. method according to claim 6 is characterized in that: described subregion is to be the zones of different that concentric annular distributes in the wafer optical imagery.
8. method according to claim 6 is characterized in that: described subregion is to be the zones of different that strip distributes in the wafer optical imagery.
9. method according to claim 6 is characterized in that: choosing according to product specification and process conditions of described subregion internal standard chip determined.
10. method according to claim 1 is characterized in that: the gray value that has in order to each pixel cell in the picture element matrix of representing described subregion internal standard chip obtains by specific mathematical operation.
11. method according to claim 10 is characterized in that: described specific mathematical operation is averaged for the gray value of each respective pixel unit in the picture element matrix of representative in the subregion of living in being appointed a plurality of chips of getting.
12. method according to claim 1 is characterized in that: carry out to preestablish gray value permissible variation scope before the described gray value contrast; Described gray value permissible variation scope is determined by concrete product requirement and process conditions.
13. method according to claim 12, it is characterized in that: when the gray value deviation of respective pixel unit exceeds described permissible variation scope in a certain pixel cell or a plurality of pixel cell and the standard chips in the picture element matrix of other chip in representing wafer, judge that described chip under test is a defective chip.
14. method according to claim 1 is characterized in that: described order of the wafer optical imagery being carried out gray scale calculating and subregion is calculated back subregion for carrying out densitometer earlier; Perhaps first subregion, after carry out densitometer and calculate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610027587 CN100499057C (en) | 2006-06-12 | 2006-06-12 | Chip detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610027587 CN100499057C (en) | 2006-06-12 | 2006-06-12 | Chip detection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101090083A true CN101090083A (en) | 2007-12-19 |
| CN100499057C CN100499057C (en) | 2009-06-10 |
Family
ID=38943349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610027587 Expired - Fee Related CN100499057C (en) | 2006-06-12 | 2006-06-12 | Chip detection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100499057C (en) |
Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308184B (en) * | 2008-06-13 | 2010-12-08 | 深圳创维－Rgb电子有限公司 | Method and system for analyzing and detecting inserting element using image |
| CN102376599A (en) * | 2010-08-10 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Generation method and device of qualified crystal grain distribution pattern |
| CN102412168A (en) * | 2011-11-30 | 2012-04-11 | 上海华力微电子有限公司 | Wafer defect defection method and system |
| CN101728227B (en) * | 2008-10-27 | 2012-05-23 | 威控自动化机械股份有限公司 | Method for picking model type crystal particle |
| CN102023161B (en) * | 2009-09-09 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Method for acquiring defect image |
| CN102522350A (en) * | 2011-11-29 | 2012-06-27 | 上海华力微电子有限公司 | Method and device for detecting failed production machine platforms |
| CN103837551A (en) * | 2014-02-21 | 2014-06-04 | 上海华力微电子有限公司 | Method for carrying out defect detection on chips through partitioning according to transparency |
| CN104122272A (en) * | 2014-08-01 | 2014-10-29 | 上海华力微电子有限公司 | Optical detection method for defects of semiconductor devices |
| CN104201132A (en) * | 2014-09-02 | 2014-12-10 | 上海华力微电子有限公司 | Method for improving defect scanning accuracy of bright field machine station |
| CN104900553A (en) * | 2014-03-07 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | Wafer defect detection method |
| CN104897706A (en) * | 2014-03-07 | 2015-09-09 | 旺宏电子股份有限公司 | Measurement method of chip or wafer surface structure |
| CN105373764A (en) * | 2014-08-14 | 2016-03-02 | 义隆电子股份有限公司 | Pixel sensing device capable of sensing in partition mode and operation method thereof |
| CN105931976A (en) * | 2016-05-25 | 2016-09-07 | 上海华力微电子有限公司 | Detection method capable of automatically defining scanning area for bright field scanning device |
| CN107037345A (en) * | 2016-02-02 | 2017-08-11 | 上海和辉光电有限公司 | Self is detected during wafer sort method and its wafer sort fixture |
| CN107402218A (en) * | 2017-09-25 | 2017-11-28 | 武汉华星光电技术有限公司 | Microdefect detection method, device and the equipment of CF substrates |
| CN108037142A (en) * | 2017-12-04 | 2018-05-15 | 江苏维普光电科技有限公司 | Mask plate optical defect detection method based on image intensity value |
| CN108475649A (en) * | 2016-01-06 | 2018-08-31 | 科磊股份有限公司 | It is monitored by the feature selecting and automation process window of rejecting outliers |
| CN108700531A (en) * | 2016-03-07 | 2018-10-23 | 东丽工程株式会社 | Flaw detection apparatus |
| CN109508722A (en) * | 2018-11-08 | 2019-03-22 | 中交第二航务工程局有限公司 | Picture comparison method and picture Compare System based on gray value |
| CN109585323A (en) * | 2018-11-27 | 2019-04-05 | 德淮半导体有限公司 | Test scan method |
| CN109994398A (en) * | 2019-04-18 | 2019-07-09 | 上海华力微电子有限公司 | A kind of wafer defect scanning control methods |
| CN110189300A (en) * | 2019-04-22 | 2019-08-30 | 中国科学院微电子研究所 | Detection method, detection device, storage medium and the processor of pass structure processing quality |
| CN110969175A (en) * | 2018-09-29 | 2020-04-07 | 长鑫存储技术有限公司 | Wafer processing method and device, storage medium and electronic equipment |
| CN111239152A (en) * | 2020-01-02 | 2020-06-05 | 长江存储科技有限责任公司 | Wafer detection method, device and equipment |
| CN111257727A (en) * | 2020-01-17 | 2020-06-09 | 上海华力集成电路制造有限公司 | Device and method for detecting arc discharge in WAT test |
| WO2020187319A1 (en) * | 2019-03-21 | 2020-09-24 | 深圳中科飞测科技有限公司 | Detection method and detection system |
| CN112086373A (en) * | 2019-06-13 | 2020-12-15 | 芯恩（青岛）集成电路有限公司 | Wafer defect detection method |
| CN112635346A (en) * | 2020-12-08 | 2021-04-09 | 深圳中科飞测科技股份有限公司 | Wafer detection method, semiconductor detection device and storage medium |
| CN113495538A (en) * | 2020-04-08 | 2021-10-12 | 南亚科技股份有限公司 | Control system and method for semiconductor manufacturing equipment |
| CN113916903A (en) * | 2021-09-29 | 2022-01-11 | 芯盟科技有限公司 | Defect detection method and system |
| WO2022088660A1 (en) * | 2020-10-29 | 2022-05-05 | 长鑫存储技术有限公司 | Method and apparatus for improving wafer detection sensitivity, and storage medium |
| CN115147422A (en) * | 2022-09-05 | 2022-10-04 | 武汉精立电子技术有限公司 | Method, device and equipment for generating crystal grains at center of wafer and storage medium |
| CN116048901A (en) * | 2023-03-31 | 2023-05-02 | 南京芯驰半导体科技有限公司 | Data detection method, device, electronic equipment, storage medium and chip |
| CN117197617A (en) * | 2023-09-19 | 2023-12-08 | 芯率智能科技(苏州)有限公司 | Defect classification method and system for repeated defects |
| TWI825721B (en) * | 2021-06-04 | 2023-12-11 | 日商Ｓｕｍｃｏ股份有限公司 | Wafer appearance inspection device and wafer appearance inspection method |
| US11935244B2 (en) | 2020-10-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Method and apparatus for improving sensitivity of wafer detection, and storage medium |
-
2006
- 2006-06-12 CN CN 200610027587 patent/CN100499057C/en not_active Expired - Fee Related
Cited By (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308184B (en) * | 2008-06-13 | 2010-12-08 | 深圳创维－Rgb电子有限公司 | Method and system for analyzing and detecting inserting element using image |
| CN101728227B (en) * | 2008-10-27 | 2012-05-23 | 威控自动化机械股份有限公司 | Method for picking model type crystal particle |
| CN102023161B (en) * | 2009-09-09 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Method for acquiring defect image |
| CN102376599B (en) * | 2010-08-10 | 2014-04-09 | 中芯国际集成电路制造(上海)有限公司 | Generation method and device of qualified crystal grain distribution pattern |
| CN102376599A (en) * | 2010-08-10 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Generation method and device of qualified crystal grain distribution pattern |
| CN102522350A (en) * | 2011-11-29 | 2012-06-27 | 上海华力微电子有限公司 | Method and device for detecting failed production machine platforms |
| CN102412168A (en) * | 2011-11-30 | 2012-04-11 | 上海华力微电子有限公司 | Wafer defect defection method and system |
| CN103837551A (en) * | 2014-02-21 | 2014-06-04 | 上海华力微电子有限公司 | Method for carrying out defect detection on chips through partitioning according to transparency |
| CN103837551B (en) * | 2014-02-21 | 2016-04-20 | 上海华力微电子有限公司 | Chip carries out the method for defects detection by transparency subregion |
| CN104900553B (en) * | 2014-03-07 | 2018-05-01 | 中芯国际集成电路制造(上海)有限公司 | Wafer defect detection method |
| CN104900553A (en) * | 2014-03-07 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | Wafer defect detection method |
| CN104897706A (en) * | 2014-03-07 | 2015-09-09 | 旺宏电子股份有限公司 | Measurement method of chip or wafer surface structure |
| CN104122272A (en) * | 2014-08-01 | 2014-10-29 | 上海华力微电子有限公司 | Optical detection method for defects of semiconductor devices |
| CN104122272B (en) * | 2014-08-01 | 2019-08-06 | 上海华力微电子有限公司 | The optical detecting method of defects of semiconductor device |
| CN105373764A (en) * | 2014-08-14 | 2016-03-02 | 义隆电子股份有限公司 | Pixel sensing device capable of sensing in partition mode and operation method thereof |
| CN104201132A (en) * | 2014-09-02 | 2014-12-10 | 上海华力微电子有限公司 | Method for improving defect scanning accuracy of bright field machine station |
| CN108475649A (en) * | 2016-01-06 | 2018-08-31 | 科磊股份有限公司 | It is monitored by the feature selecting and automation process window of rejecting outliers |
| CN107037345A (en) * | 2016-02-02 | 2017-08-11 | 上海和辉光电有限公司 | Self is detected during wafer sort method and its wafer sort fixture |
| CN107037345B (en) * | 2016-02-02 | 2019-09-17 | 上海和辉光电有限公司 | The method and its wafer test fixture that self is detected when wafer test |
| CN108700531A (en) * | 2016-03-07 | 2018-10-23 | 东丽工程株式会社 | Flaw detection apparatus |
| CN105931976A (en) * | 2016-05-25 | 2016-09-07 | 上海华力微电子有限公司 | Detection method capable of automatically defining scanning area for bright field scanning device |
| CN105931976B (en) * | 2016-05-25 | 2019-01-04 | 上海华力微电子有限公司 | A kind of bright field scanning device defines the detection method of scanning area automatically |
| CN107402218A (en) * | 2017-09-25 | 2017-11-28 | 武汉华星光电技术有限公司 | Microdefect detection method, device and the equipment of CF substrates |
| CN108037142A (en) * | 2017-12-04 | 2018-05-15 | 江苏维普光电科技有限公司 | Mask plate optical defect detection method based on image intensity value |
| CN110969175B (en) * | 2018-09-29 | 2022-04-12 | 长鑫存储技术有限公司 | Wafer processing method and device, storage medium and electronic equipment |
| CN110969175A (en) * | 2018-09-29 | 2020-04-07 | 长鑫存储技术有限公司 | Wafer processing method and device, storage medium and electronic equipment |
| CN109508722A (en) * | 2018-11-08 | 2019-03-22 | 中交第二航务工程局有限公司 | Picture comparison method and picture Compare System based on gray value |
| CN109585323A (en) * | 2018-11-27 | 2019-04-05 | 德淮半导体有限公司 | Test scan method |
| US11881186B2 (en) | 2019-03-21 | 2024-01-23 | Skyverse Technology Co., Ltd. | Detection method and detection system |
| WO2020187319A1 (en) * | 2019-03-21 | 2020-09-24 | 深圳中科飞测科技有限公司 | Detection method and detection system |
| CN111724335A (en) * | 2019-03-21 | 2020-09-29 | 深圳中科飞测科技有限公司 | Detection method and detection system |
| CN109994398A (en) * | 2019-04-18 | 2019-07-09 | 上海华力微电子有限公司 | A kind of wafer defect scanning control methods |
| CN110189300B (en) * | 2019-04-22 | 2021-03-09 | 中国科学院微电子研究所 | Detection method and detection device for process quality of hole-shaped structure, storage medium and processor |
| CN110189300A (en) * | 2019-04-22 | 2019-08-30 | 中国科学院微电子研究所 | Detection method, detection device, storage medium and the processor of pass structure processing quality |
| CN112086373A (en) * | 2019-06-13 | 2020-12-15 | 芯恩（青岛）集成电路有限公司 | Wafer defect detection method |
| CN111239152A (en) * | 2020-01-02 | 2020-06-05 | 长江存储科技有限责任公司 | Wafer detection method, device and equipment |
| CN111239152B (en) * | 2020-01-02 | 2023-11-17 | 长江存储科技有限责任公司 | Wafer detection method, device and equipment |
| CN111257727A (en) * | 2020-01-17 | 2020-06-09 | 上海华力集成电路制造有限公司 | Device and method for detecting arc discharge in WAT test |
| CN113495538A (en) * | 2020-04-08 | 2021-10-12 | 南亚科技股份有限公司 | Control system and method for semiconductor manufacturing equipment |
| CN113495538B (en) * | 2020-04-08 | 2024-03-29 | 南亚科技股份有限公司 | Control system and method for semiconductor manufacturing equipment |
| WO2022088660A1 (en) * | 2020-10-29 | 2022-05-05 | 长鑫存储技术有限公司 | Method and apparatus for improving wafer detection sensitivity, and storage medium |
| US11935244B2 (en) | 2020-10-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Method and apparatus for improving sensitivity of wafer detection, and storage medium |
| CN112635346A (en) * | 2020-12-08 | 2021-04-09 | 深圳中科飞测科技股份有限公司 | Wafer detection method, semiconductor detection device and storage medium |
| CN112635346B (en) * | 2020-12-08 | 2023-12-26 | 深圳中科飞测科技股份有限公司 | Wafer inspection method, semiconductor inspection apparatus, and storage medium |
| TWI825721B (en) * | 2021-06-04 | 2023-12-11 | 日商Ｓｕｍｃｏ股份有限公司 | Wafer appearance inspection device and wafer appearance inspection method |
| CN113916903A (en) * | 2021-09-29 | 2022-01-11 | 芯盟科技有限公司 | Defect detection method and system |
| CN115147422A (en) * | 2022-09-05 | 2022-10-04 | 武汉精立电子技术有限公司 | Method, device and equipment for generating crystal grains at center of wafer and storage medium |
| CN116048901A (en) * | 2023-03-31 | 2023-05-02 | 南京芯驰半导体科技有限公司 | Data detection method, device, electronic equipment, storage medium and chip |
| CN117197617A (en) * | 2023-09-19 | 2023-12-08 | 芯率智能科技(苏州)有限公司 | Defect classification method and system for repeated defects |
| CN117197617B (en) * | 2023-09-19 | 2024-05-28 | 芯率智能科技(苏州)有限公司 | Defect classification method and system for repeated defects |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100499057C (en) | 2009-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100499057C (en) | Chip detection method | |
| US7881520B2 (en) | Defect inspection system | |
| TWI603074B (en) | Optical film defect detection method and system thereof | |
| US11144778B2 (en) | Descriptor guided fast marching method for analyzing images and systems using the same | |
| TWI614721B (en) | Detection of defects embedded in noise for inspection in semiconductor manufacturing | |
| US6683974B1 (en) | Image defect detection apparatus and image defect detection method | |
| US20140198975A1 (en) | Region-of-interest determination apparatus, observation tool or inspection tool, region-of-interest determination method, and observation method or inspection method using region-of-interest determination method | |
| KR101565748B1 (en) | A method and apparatus for detecting a repetitive pattern in image | |
| CN107515481B (en) | Display panel detection method and device | |
| US20120163698A1 (en) | Method for Inspection and Detection of Defects on Surfaces of Disc-Shaped Objects and Computer System with a Software Product for Carrying out the Method | |
| CN104062305B (en) | A kind of analysis method of integrated circuit defect | |
| TWI641961B (en) | Method and system for design-based fast in-line defect diagnosis, classification and sample | |
| CN111047655A (en) | High-definition camera cloth defect detection method based on convolutional neural network | |
| CN107689335B (en) | method for analyzing defects of wafers of various products | |
| CN114764770A (en) | Wafer detection method, device, equipment and storage medium | |
| WO2014103617A1 (en) | Alignment device, defect inspection device, alignment method, and control program | |
| WO2016152159A1 (en) | Dna chip image spot validity assessing device, dna chip image spot validity assessing method, and dna chip image spot validity assessing program | |
| CN108508053B (en) | Method for detecting systematic infinitesimal physical defects | |
| CN112465780B (en) | Method and device for monitoring abnormal film thickness of insulating layer | |
| JP2003270168A (en) | Defect inspection method and method for manufacturing semiconductor device | |
| CN112837316B (en) | Method and device for identifying aggregated cells | |
| JPS6385432A (en) | Inspecting method for linear defect | |
| JP2010164446A (en) | Visual inspection method of item to be inspected and program | |
| JP2008058124A (en) | Flaw inspection method and flaw inspection device | |
| CN115829900A (en) | Detection method, detection system, device and storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111109 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090610 Termination date: 20180612 |