CN104733567A - Manufacturing method for efficient low-cost N-type back-junction front contact single-crystalline battery - Google Patents
Manufacturing method for efficient low-cost N-type back-junction front contact single-crystalline battery Download PDFInfo
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- CN104733567A CN104733567A CN201510143771.0A CN201510143771A CN104733567A CN 104733567 A CN104733567 A CN 104733567A CN 201510143771 A CN201510143771 A CN 201510143771A CN 104733567 A CN104733567 A CN 104733567A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000004332 silver Substances 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- 238000007747 plating Methods 0.000 claims abstract description 8
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 20
- 239000005543 nano-size silicon particle Substances 0.000 claims description 19
- 239000002002 slurry Substances 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 12
- 229920002472 Starch Polymers 0.000 claims description 10
- 235000019698 starch Nutrition 0.000 claims description 10
- 239000008107 starch Substances 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 241001347978 Major minor Species 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000010422 painting Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 7
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000002585 base Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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Abstract
The invention provides a manufacturing method for an efficient and low-cost N-type back junction front contact single-crystalline battery. The method includes the following steps that step1, texturing is performed on the front face of an N-type single-crystalline silicon piece, and phosphorus diffusion, etching cleaning and antireflective film plating are performed; step2, nanometer silicon-boron paste is printed on the back face of the N-type single-crystalline silicon piece and dried; step3, diffusion doping is performed on the nanometer silicon-boron paste on the back face of the N-type single-crystalline silicon piece; step4, back face electrode silver paste is printed on the back face of the N-type single-crystalline silicon piece and dried; step5, back face aluminum paste is printed on the back face of the N-type single-crystalline silicon piece and dried; step6, main and auxiliary grating line electrode silver paste is printed on the front face of the N-type single-crystalline silicon piece and sintered. The nanometer silicon-boron paste is printed on the back face of the N-type single-crystalline silicon piece, the technical means of laser doping on the nanometer silicon-boron paste is implemented, in this way, the back junction defect is effectively overcome, a perfect back junction structure is formed, conversion efficiency is improved, and the manufacturing method has the advantages that the input cost is low, the efficiency of the battery is high, the structure of the battery is stable, and component modules are good in welding performance.
Description
Technical field
Contact the manufacture method of single crystal battery before the present invention relates to a kind of high efficiency, low cost N-type back of the body knot, belong to manufacture of solar cells manufacture technology field.
Background technology
At present; domestic photovoltaic market N-type single crystal battery has realized the production of scale; here the production said refers to the production of low input low cost in traditional wire; but not the production of high investment high cost, such as IBC battery (all back-contact electrodes contact crystal silicon solar batteries), HIT battery (heterojunction solar battery) etc.Current, common low cost N-type single crystal battery is produced following two kinds of modes:
One be traditional wire tradition single crystal battery the mode of production.Its flow process is as follows: alkali making herbs into wool-phosphorus diffusion-wet etching-tubular type PECVD (plasma enhanced chemical vapor deposition method) plates antireflective film-printed back silver electrode+oven dry-printed back aluminium back surface field+oven dry-printing front silver electrode+oven dry sintering-electric performance test, the advantage of this mode of production is without the need to extra input, and flow process is without the need to change; Shortcoming is that back electrode position P-N junction is perfect not, causes transformation efficiency on the low side.
Two is modes of production that full aluminium carries on the back N-type single crystal battery.Its flow process is as follows: alkali making herbs into wool-phosphorus diffusion-wet etching-tubular type PECVD plating antireflective film-print full aluminium back surface field+oven dry-printing front silver electrode+sintering-printed back silver electrode+oven dry-electric performance test, the advantage of this mode of production is that back of the body knot is fairly perfect, and transformation efficiency improves about 0.6% than traditional mode; Shortcoming is that the change of silk screen printing flow process becomes complicated, and the slurry of back silver electrode improves so in pulling force and in stability not enough.
Summary of the invention
The technical problem to be solved in the present invention is to provide one can improve back of the body knot preferably, and transformation efficiency is high, and the manufacture method of the low N-type single crystal battery of cost.
In order to solve the problems of the technologies described above, technical scheme of the present invention contacts the manufacture method of single crystal battery before being to provide a kind of high efficiency, low cost N-type back of the body knot, it is characterized in that: comprise following 6 steps:
Step 1: in the front making herbs into wool of n type single crystal silicon sheet, uses phosphorus diffusion, etch cleaner, plating antireflective film;
Step 2: starch at the back up nano-silicon boron of n type single crystal silicon sheet and dry;
Step 3: diffusing, doping is carried out to nano-silicon boron slurry at the back side of n type single crystal silicon sheet;
Step 4: n type single crystal silicon sheet back up back electrode silver paste and dry;
Step 5: n type single crystal silicon sheet back up back side aluminium paste and dry;
Step 6: starch at the front of n type single crystal silicon sheet printing major-minor gate line electrode silver and sinter.
Preferably, in described step 2, adopt back electrode specification screen painting nano-silicon boron slurry.
Preferably, in described step 3, nano-silicon boron slurry diffusing, doping mode is laser doping.
Preferably, in described step 1, plating antireflective film is for using tubular type plasma enhanced chemical vapor deposition method plating silicon nitride anti-reflection film.
The technological process of method provided by the invention is duplicate with conventional solar cell line before printing, first print nano-silicon boron slurry when silk screen printing, re-use laser and carry out laser doping, republish backplate, republish back aluminium back surface field, finally print front electrode.Compared with traditional printing-flow, the operation of method provided by the invention is many printing nano-silicon boron slurry and laser doping, to form with nano-silicon boron slurry the back of the body that back of the body knot and aluminium paste formed and ties and jointly form the perfect back of the body in the back side and tie at back electrode place.
Compared with existing common low cost N-type single crystal battery technology, the invention has the beneficial effects as follows:
1, present invention employs and starch at the back up nano-silicon boron of n type single crystal silicon sheet and carry out the technological means of laser doping, effectively can solve back of the body knot defect, improve conversion efficiency, its conversion efficiency of solar cell adopting method provided by the invention to produce can reach more than 18%.This conversion efficiency and full aluminium carry on the back N-type cell efficiency quite, and the N-type cell of producing than traditional mode of production mode is high by about 0.6%.
2, the present invention adopts first printing nano-silicon boron starch and carry out laser doping, republishes backplate, back aluminium back surface field, finally prints the print order of front electrode, ensure that back electrode pulling force is at more than 3N.The N-type cell that this pulling force characteristic and traditional mode of production mode are produced is suitable, than full aluminium back of the body N-type cell pulling force mean height about 1N.
Embodiment
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
Embodiment
A manufacture method for contact single crystal battery before high efficiency, low cost N-type back of the body knot, concrete steps are:
Step 1.1: get N-type 125 type
monocrystalline silicon piece is some, in the front making herbs into wool of n type single crystal silicon sheet, Woolen-making liquid is made up of the water of NaOH 5wt%, texturing assistant agent (single crystal silicon solar cell making herbs into wool supplement TS41) 1wt% and surplus, Reducing thickness 0.35g, and pyramid size is at 3um;
Step 1.2: use phosphorus oxychloride to carry out phosphorus diffusion, sheet resistance 70 ± 5 Ω in the front of n type single crystal silicon sheet;
Step 1.3: use wet etching machine to carry out etch cleaner, to do polished backside process and to remove edge P-N junction, Reducing thickness 0.1 ~ 0.2g at the back side of n type single crystal silicon sheet;
Step 1.4: use tubular type PECVD to plate silicon nitride anti-reflection film, thickness 80 ± 5um, refractive index 2.05 ± 0.05 in the front of n type single crystal silicon sheet;
Step 2: adopt back electrode half tone specification printing nano-silicon boron starch and dry, the weight in wet base 0.004 ± 0.002g of nano-silicon boron slurry, bake out temperature 250 ~ 350 DEG C at silicon chip back side, drying time is 1min;
Step 3: carry out laser doping in the nano-silicon boron slurry printing position, the back side of n type single crystal silicon sheet, after doping diffusion, sheet resistance is 50 ± 5 Ω;
Step 4: starch at the back up back electrode silver of n type single crystal silicon sheet and dry, the weight in wet base 0.003 ± 0.001g of back electrode silver slurry, bake out temperature 200-250 DEG C, drying time is 1min;
Step 5: carry on the back electric field at the back up aluminium paste of n type single crystal silicon sheet and dry, the weight in wet base 0.85 ± 0.05g of aluminium paste back of the body electric field, bake out temperature 200 ~ 250 DEG C, drying time is 1min;
Step 6: starch at the front of n type single crystal silicon sheet printing major-minor gate line electrode silver and sinter, total weight in wet base 0.07 ± 0.005g of major-minor gate line electrode silver slurry, the sintering temperature of each warm area of sintering furnace is respectively 500 DEG C, 550 DEG C, 600 DEG C, 760 DEG C, 830 DEG C, 935 DEG C, the length of each warm area is 1m, stove with speed 255in/min.
Wherein, the half tone specification that the nano-silicon boron slurry printing in step 2 uses is consistent with the half tone specification that the back electrode printing in step 4 uses; The nano-silicon boron slurry used in step 2 is purchased from Suzhou Science and Technology Ltd. in Jin Rui morning, and model is SY-01; The laser that in step 3, laser doping uses is purchased from Wuhan DR Laser Technology Co., Ltd., and model is DR-AL-Y30; The back electrode silver slurry used in step 4 is purchased from Hangzhou Right Silver Electronic Material Material Co., Ltd., and model is RS8809B; The back electric field aluminum pulp used in step 5 is purchased from Nantong Tiansheng New Energy Technology Co., Ltd., and model is K6W10; The back electrode silver slurry used in step 6 is purchased from Samsung Kai Meike material trade Co., Ltd, and model is 8630A.
Contact single crystal battery before obtained N-type back of the body knot of the present invention is carried out electric performance test with conventional N-type single crystal battery BERGER test machine, and experimental data is as shown in the table:
In table 1, routine refers to the solar cell using conventional flowsheet to make, and boron diffusion contacts single crystal battery before referring to the N-type back of the body knot that use method provided by the invention is obtained.As shown in Table 1, before the N-type back of the body knot that the present invention obtains, contact single crystal battery is compared than conventional N-type single crystal battery, and conversion efficiency substantially increases.
Present invention employs and starch at the back up nano-silicon boron of n type single crystal silicon sheet and carry out the technological means of laser doping, efficiently solve back of the body knot defect, form perfect back of the body junction structure, improve conversion efficiency, there is the advantages such as cost input is low, battery efficiency is high, battery structure is stable, assembly module good welding performance.
Claims (4)
1. contact a manufacture method for single crystal battery before high efficiency, low cost N-type back of the body knot, it is characterized in that: comprise following 6 steps:
Step 1: in the front making herbs into wool of n type single crystal silicon sheet, uses phosphorus diffusion, etch cleaner, plating antireflective film;
Step 2: starch at the back up nano-silicon boron of n type single crystal silicon sheet and dry;
Step 3: diffusing, doping is carried out to nano-silicon boron slurry at the back side of n type single crystal silicon sheet;
Step 4: n type single crystal silicon sheet back up back electrode silver paste and dry;
Step 5: n type single crystal silicon sheet back up back side aluminium paste and dry;
Step 6: starch at the front of n type single crystal silicon sheet printing major-minor gate line electrode silver and sinter.
2. contact the manufacture method of single crystal battery before high efficiency, low cost N-type back of the body knot as claimed in claim 1, it is characterized in that: in described step 2, adopt back electrode specification screen painting nano-silicon boron slurry.
3. contact the manufacture method of single crystal battery before high efficiency, low cost N-type back of the body knot as claimed in claim 1, it is characterized in that: in described step 3, nano-silicon boron slurry diffusing, doping mode is laser doping.
4. contact the manufacture method of single crystal battery before high efficiency, low cost N-type back of the body knot as claimed in claim 1 or 2, it is characterized in that: in described step 1, plating antireflective film is for using tubular type plasma enhanced chemical vapor deposition method plating silicon nitride anti-reflection film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510143771.0A CN104733567A (en) | 2015-03-30 | 2015-03-30 | Manufacturing method for efficient low-cost N-type back-junction front contact single-crystalline battery |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510143771.0A CN104733567A (en) | 2015-03-30 | 2015-03-30 | Manufacturing method for efficient low-cost N-type back-junction front contact single-crystalline battery |
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| CN104733567A true CN104733567A (en) | 2015-06-24 |
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| CN201510143771.0A Pending CN104733567A (en) | 2015-03-30 | 2015-03-30 | Manufacturing method for efficient low-cost N-type back-junction front contact single-crystalline battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411341A (en) * | 2018-09-29 | 2019-03-01 | 平煤隆基新能源科技有限公司 | A method of improving SE battery diffused sheet resistance uniformity |
| CN112117334A (en) * | 2020-09-11 | 2020-12-22 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Preparation method of selective emitter and preparation method of solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543253A (en) * | 2012-02-17 | 2012-07-04 | 杜国平 | Aluminum-silicon-boron paste and preparation method for same |
| CN103367545A (en) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | Method for synchronously implementing local contact and local doping at back of solar cell by utilizing laser |
| CN103714879A (en) * | 2013-12-27 | 2014-04-09 | 苏州金瑞晨科技有限公司 | Nanometer borosilicate slurry and process for applying nanometer borosilicate slurry to preparation of full-shielding boron back surface field |
-
2015
- 2015-03-30 CN CN201510143771.0A patent/CN104733567A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543253A (en) * | 2012-02-17 | 2012-07-04 | 杜国平 | Aluminum-silicon-boron paste and preparation method for same |
| CN103367545A (en) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | Method for synchronously implementing local contact and local doping at back of solar cell by utilizing laser |
| CN103714879A (en) * | 2013-12-27 | 2014-04-09 | 苏州金瑞晨科技有限公司 | Nanometer borosilicate slurry and process for applying nanometer borosilicate slurry to preparation of full-shielding boron back surface field |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411341A (en) * | 2018-09-29 | 2019-03-01 | 平煤隆基新能源科技有限公司 | A method of improving SE battery diffused sheet resistance uniformity |
| CN109411341B (en) * | 2018-09-29 | 2021-07-27 | 平煤隆基新能源科技有限公司 | Method for improving diffusion sheet resistance uniformity of SE battery |
| CN112117334A (en) * | 2020-09-11 | 2020-12-22 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Preparation method of selective emitter and preparation method of solar cell |
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Application publication date: 20150624 |