CN109980047B - Low-voltage diffusion process matched with selective emitter - Google Patents
Low-voltage diffusion process matched with selective emitter Download PDFInfo
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- CN109980047B CN109980047B CN201910249817.5A CN201910249817A CN109980047B CN 109980047 B CN109980047 B CN 109980047B CN 201910249817 A CN201910249817 A CN 201910249817A CN 109980047 B CN109980047 B CN 109980047B
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- propulsion
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- deposition
- diffusion process
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 230000008021 deposition Effects 0.000 claims abstract description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 11
- 239000011574 phosphorus Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to the field of low temperature diffusion. A low pressure diffusion process for matching a selective emitter deposits a phosphorus source for two depositions. Performing high-temperature propulsion for two times, depositing a surface phosphorus source, depositing at the pressure of 100-. The scheme optimizes the low-pressure diffusion process, simultaneously meets the requirements of different surface concentrations of laser doping and non-doping areas, and gives play to the advantages of laser SE to the greatest extent.
Description
Technical Field
The present invention relates to the field of low temperature diffusion.
Background
Due to the appearance of the PERC single crystal battery, the requirement of the market on a high-efficiency battery is met, the technical level of the whole domestic photovoltaic manufacturing is improved, and by the next half year of 2018, the single crystal PERC starts to sequentially superpose laser SE, the efficiency is improved by 0.2-0.3%.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to optimize the low-voltage diffusion process to match with the laser SE and improve the efficiency of the PERC single crystal.
The technical scheme adopted by the invention is as follows: a low-voltage diffusion process for matching a selective emitter is carried out according to the following steps
Step one, depositing a phosphorus source, and performing two times of deposition, wherein the deposition pressure is set to be 100-; then, the second deposition is carried out, the deposition pressure is 100-.
Step two, performing high-temperature propulsion, performing two times of propulsion, wherein the first propulsion has the propulsion pressure of 100-; then, the secondary propulsion is carried out, the propulsion pressure is 100-.
And step three, depositing a surface phosphorus source, wherein the deposition pressure is 100-.
And step four, low-temperature propulsion, wherein the propulsion pressure is 100-.
The invention has the beneficial effects that: the key process point of the laser SE is that the contact resistance at the laser grooving position needs to be reduced to a proper size, but the contact resistance is reduced by simply depending on a laser junction depth advancing mode, the maximum improvement of the conversion efficiency cannot be guaranteed, and the saturation current density can be increased. If the surface phosphorus doping concentration is increased in the diffusion section, the purpose of reducing the contact resistance is achieved through laser propulsion, and the optimal effect can be ensured. The specific implementation measure is that firstly, normal PN junction is manufactured by utilizing low-pressure diffusion multiple deposition and propulsion, the manufacturing sequence is firstly oxygen-free deposition after oxygen deposition, then propulsion is carried out, and finally, a layer of thin phosphorus is deposited on the surface through small-flow large nitrogen, large-flow small nitrogen and small oxygen. It should be noted that the density and thickness of the surface deposited phosphorus source can be indirectly controlled by optimizing the flow of the large nitrogen, small nitrogen and small oxygen in the last layer. The scheme optimizes the low-pressure diffusion process, simultaneously meets the requirements of different surface concentrations of laser doping and non-doping areas, and gives play to the advantages of laser SE to the greatest extent.
Detailed Description
Due to the appearance of the PERC single crystal battery, the requirement of the market on a high-efficiency battery is met, the technical level of the whole domestic photovoltaic manufacturing is improved, and by the next half year of 2018, the single crystal PERC starts to sequentially superpose laser SE, the efficiency is improved by 0.2-0.3%.
A low-voltage diffusion process for matching a selective emitter is carried out according to the following steps
Depositing a phosphorus source, and performing two-time deposition, wherein the deposition pressure is set to be 100mbar, the temperature is set to be 750 ℃, the nitrogen flow is set to be 350sccm, the phosphorus oxychloride flow is set to be 950sccm, the oxygen flow is set to be 800sccm, the first deposition is performed, and the deposition time is 9 min; then carrying out secondary deposition, wherein the deposition pressure is 100mbar, the temperature is 780 ℃, the nitrogen is introduced into the deposition chamber for 1400sccm, the phosphorus oxychloride flow is 1000sccm, oxygen is not introduced, and the deposition time is 6 min.
Step two, performing high-temperature propulsion, performing two times of propulsion, wherein the propulsion pressure is 100mbar, the temperature is 830 ℃, the nitrogen flow is 1500 sccm, the oxygen flow is 400sccm, and the time is 4 min; then, the secondary propulsion is carried out, the propulsion pressure is 100-.
And step three, depositing a surface phosphorus source, wherein the deposition pressure is 100mbar, the temperature is 840 ℃, 300sccm of nitrogen is introduced, 900sccm of phosphorus oxychloride is introduced, and the deposition time is 2 min.
And step four, low-temperature propulsion, wherein the propulsion pressure is 100mbar, the temperature is 780 ℃, nitrogen is introduced into the vessel for 1100sccm, and the propulsion time is 3 min.
Claims (1)
1. A low-voltage diffusion process for matching a selective emitter is characterized in that: the method comprises the following steps
Step one, depositing a phosphorus source, and performing two times of deposition, wherein the deposition pressure is set to be 100-; then, performing secondary deposition, wherein the deposition pressure is 100-;
step two, performing high-temperature propulsion, performing two times of propulsion, wherein the first propulsion has the propulsion pressure of 100-; then carrying out secondary propulsion, wherein the propulsion pressure is 100-;
depositing a surface phosphorus source, wherein the deposition pressure is 100-;
and step four, low-temperature propulsion, wherein the propulsion pressure is 100-.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910249817.5A CN109980047B (en) | 2019-03-29 | 2019-03-29 | Low-voltage diffusion process matched with selective emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910249817.5A CN109980047B (en) | 2019-03-29 | 2019-03-29 | Low-voltage diffusion process matched with selective emitter |
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| Publication Number | Publication Date |
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| CN109980047A CN109980047A (en) | 2019-07-05 |
| CN109980047B true CN109980047B (en) | 2021-02-12 |
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| CN201910249817.5A Active CN109980047B (en) | 2019-03-29 | 2019-03-29 | Low-voltage diffusion process matched with selective emitter |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459646A (en) * | 2019-08-07 | 2019-11-15 | 山西潞安太阳能科技有限责任公司 | A kind of novel process for throwing laser selective emitter suitable for alkali |
| CN110473938A (en) * | 2019-08-08 | 2019-11-19 | 山西潞安太阳能科技有限责任公司 | A kind of novel alkali throwing selective emitter making technology |
| CN111883617A (en) * | 2020-08-03 | 2020-11-03 | 山西潞安太阳能科技有限责任公司 | Production process of quasi-single crystal battery piece |
| CN112466984B (en) * | 2020-10-27 | 2022-07-29 | 山西潞安太阳能科技有限责任公司 | Low-voltage diffusion process of solar single-crystal efficient PERC + SE battery piece |
| CN112510112B (en) * | 2020-11-04 | 2022-03-15 | 山西潞安太阳能科技有限责任公司 | Diffusion process method of high-compactness oxide layer |
| CN112864273A (en) * | 2020-12-29 | 2021-05-28 | 环晟光伏(江苏)有限公司 | Method for repairing PN junction after electroplating front surface slotting |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097523A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Process for diffusing silicon solar cell adopting selective emitter junction realized through double diffusion |
| CN105161570B (en) * | 2015-08-18 | 2017-03-01 | 东莞南玻光伏科技有限公司 | Selective emitter solar battery and its method of diffusion |
| CN107394012A (en) * | 2017-08-18 | 2017-11-24 | 常州亿晶光电科技有限公司 | A kind of silicon chip laser doping SE diffusion technique |
| CN109449246B (en) * | 2018-09-05 | 2021-03-05 | 浙江爱旭太阳能科技有限公司 | Silicon crystal sheet phosphorus diffusion method |
| CN109411341B (en) * | 2018-09-29 | 2021-07-27 | 平煤隆基新能源科技有限公司 | Method for improving diffusion sheet resistance uniformity of SE battery |
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| CN109980047A (en) | 2019-07-05 |
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