CN112466984B - Low-voltage diffusion process of solar single-crystal efficient PERC + SE battery piece - Google Patents

Low-voltage diffusion process of solar single-crystal efficient PERC + SE battery piece Download PDF

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CN112466984B
CN112466984B CN202011166593.0A CN202011166593A CN112466984B CN 112466984 B CN112466984 B CN 112466984B CN 202011166593 A CN202011166593 A CN 202011166593A CN 112466984 B CN112466984 B CN 112466984B
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CN112466984A (en
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刘杰
张泽泽
申争浩
刘栩瑞
刘照敏
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Shanxi Luan Solar Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention relates to the field of solar cell production diffusion. A low-pressure diffusion process of a solar single-crystal efficient PERC + SE battery piece comprises the following steps of high-temperature oxidation before diffusion, preparation of a PN junction by a step-by-step diffusion method, and post-oxidation, wherein the preparation of the PN junction by the step-by-step diffusion method comprises the steps of first low-pressure diffusion, heat preservation and buffering, second low-pressure diffusion, first temperature rise and propulsion, and second temperature rise and propulsion; the invention can prepare high surface concentration and low junction depth, the electrical performance parameters are expressed as lower open-circuit voltage and filling, the short-circuit current is higher, the short-wave effect is poorer after the assembly is packaged, and the CTM (percentage of the assembly output power and the total power of a battery plate) is low, and the battery efficiency is greatly improved.

Description

Low-voltage diffusion process of solar single-crystal efficient PERC + SE battery piece
Technical Field
The invention relates to the field of solar cell production diffusion.
Background
As global climate warms, various renewable energy sources are rapidly developing. The photovoltaic is used as an important renewable energy source, the rapid development is realized in nearly fifteen years, various batteries are in a hundred of flowers, and the single-crystal high-efficiency PERC + SE battery initially has the flat price and is capable of making an important contribution to the development of new energy sources in the world.
The core steps for producing the solar cell are preparing PN junctions, and the PN junction preparation method is to mix V-group impurities into P-type silicon or mix III-group impurities into N-type silicon by adopting a heating method. The impurity elements enter the silicon substrate due to thermal diffusion movement at high temperature, the distribution of the impurity elements in the substrate is caused by the types, initial concentrations, diffusion temperatures and time of the impurity elements, different battery structures can be formed by different combinations, and the difference of the electric performance of the battery piece is large. At present, the most commonly used V-group impurity element in the silicon solar cell is phosphorus, and the III-group impurity element is boron.
At present, most of high-efficiency PERC + SE battery piece low-voltage diffusion processes adopt shallow junction high sheet resistance, show higher surface concentration and low junction depth, lower junction depth inevitably leads to poorer ohmic contact, the resistance in the longitudinal transmission process is larger, the short-wave response of a battery section is better, and the short-circuit current is higher. But the short band of light is blocked out by the glass after the assembly is packaged, resulting in poor short band effect and thus low CTM (percentage of the assembly output power to the sum of the cell powers). Therefore, the invention can not only improve the open-circuit voltage and the fill factor of the battery piece, but also enable the assembly end to have higher CTM.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to further improve the diffusion process of the low-voltage diffusion process of the PERC + SE battery plate so as to improve the efficiency of the battery.
The technical scheme adopted by the invention is as follows: a low-voltage diffusion process of a solar single-crystal high-efficiency PERC + SE battery plate comprises the following steps
Step one, high-temperature oxidation before diffusion, wherein the process conditions are as follows: the temperature is 650-800 ℃, the nitrogen flow is 500-2000 sccm, the oxygen flow is 500-1000 sccm, the pressure is 50-150 mbar, and the duration is 100-200 s;
step two, preparing PN junction by step diffusion method
The first step is low-pressure diffusion, and the process conditions are as follows: the pressure is 50 mbar-150 mbar, the diffusion temperature is 750 ℃ to 780 ℃, the diffusion time is 100 s-300 s, the nitrogen flow is 1000 sccm-2000 sccm, the phosphorus oxychloride flow is 600 sccm-1000 sccm, and the oxygen flow is 300 sccm-1000 sccm;
the process conditions of heat preservation and buffering are as follows: the pressure is 50 mbar-150 mbar, the diffusion temperature is 750 ℃ to 780 ℃, the nitrogen flow is 1000 sccm-2000 sccm, the oxygen flow is 300 sccm-1000 sccm, the introduction of phosphorus oxychloride is stopped, and the duration is 50 s-70 s;
the second step is low-pressure diffusion, and the process conditions are as follows: the pressure is 50 mbar-150 mbar, the diffusion temperature is 780 ℃ to 800 ℃, the diffusion time is 100 s-300 s, the nitrogen flow is 1000 sccm-2000 sccm, and the phosphorus oxychloride flow is 500 sccm-1000 sccm; the oxygen flow is 300sccm to 1000 sccm;
The first step of temperature rise is carried out, and the process conditions are as follows: the pressure is 50 mbar-150 mbar, and the propulsion temperature is 800 ℃ -900 ℃; the propulsion time is 300-500 s, and the nitrogen flow is 1000-2000 sccm;
secondly, heating and propelling, wherein the process conditions are as follows: the pressure is 50 mbar-150 mbar, and the propulsion temperature is 800 ℃ -900 ℃; the propulsion time is 500-2000 s, the nitrogen flow is 1000-2000 sccm, and the oxygen flow is 0-500 sccm;
step three, post-oxidation, wherein the process conditions are as follows: the pressure is 50 mbar-150 mbar, the oxidation time is 200 s-500 s, the flow of the introduced oxygen is 500-1000 sccm, the flow of the nitrogen is 500 sccm-2000 sccm, and the temperature is 750-800 ℃.
The second step of heating propulsion in the second step is divided into two steps, firstly, low-oxygen propulsion is adopted, and then, oxygen-free propulsion is adopted, wherein the process conditions of the low-oxygen propulsion are as follows: the pressure is 50 mbar-150 mbar, and the propulsion temperature is 800 ℃ -900 ℃; the propulsion time is 100-300 s, the nitrogen flow is 1000-2000 sccm, and the oxygen flow is 100-500 sccm; the anaerobic propulsion process conditions are as follows: the pressure is 50 mbar-150 mbar, and the propulsion temperature is 800 ℃ -900 ℃; the advancing time is 400-1700 s, and the nitrogen flow is 1000-2000 sccm.
The solar energy single crystal high-efficiency PERC + SE battery piece is a P-type boron-doped single crystal silicon piece.
The invention has the beneficial effects that: the invention can prepare high surface concentration and low junction depth, the electrical performance parameters are expressed as lower open-circuit voltage and filling, the short-circuit current is higher, the short-wave effect is poorer after the assembly is packaged, and the CTM (percentage of the assembly output power and the total power of a battery plate) is low, and the battery efficiency is greatly improved.
Detailed Description
Example 1:
high-temperature oxidation before diffusion: oxidizing a silicon wafer at high temperature, and pre-growing a layer of SiO2 with nano-scale thickness on the surface of the silicon wafer;
the technological parameters are as follows: the pressure in the furnace is 110mbar, the time of the oxidation step is maintained for 150s, the flow of the introduced oxygen is 6000sccm, the flow of the introduced nitrogen is 500 sccm-2000 sccm, and the temperature is 750 ℃.
Low-pressure diffusion: the PN junction is prepared by adopting a step-by-step diffusion method, and the specific diffusion steps are as follows:
the first step is low-pressure diffusion, and the technological parameters are as follows: the pressure in the furnace is 110mbar, and the diffusion temperature is 775 ℃; the diffusion time was 185 s; the nitrogen flow rate is 1200 sccm; the flow rate of the phosphorus oxychloride is 900 sccm; the oxygen flow is 700 sccm;
the process conditions of heat preservation and buffering are as follows: the pressure is 110mbar, the diffusion temperature is 775 ℃, the nitrogen flow is 1200sccm, the oxygen flow is 700sccm, the introduction of phosphorus oxychloride is stopped, and the duration is 60 s;
And secondly, low-pressure diffusion, wherein the process parameters are as follows: the pressure in the furnace is 110mbar, and the diffusion temperature is 785 ℃; the diffusion time was 200 s; the nitrogen flow rate is 1200 sccm; the flow rate of phosphorus oxychloride is 950 sccm; the oxygen flow is 750 sccm;
the first step of temperature rise is advanced, and the technological parameters are as follows: the pressure in the furnace is 110mbar, and the advancing temperature is 850 ℃; the advancing time is 500 s; the flow rate of nitrogen is 1100sccm, the flow rate of phosphorus oxychloride is 0sccm, and the flow rate of oxygen is 0 sccm;
and the second step of temperature rise propulsion, namely aerobic propulsion is carried out firstly and then anaerobic propulsion is carried out, wherein the aerobic propulsion process parameters are as follows: the pressure in the furnace is 110mbar, and the propulsion temperature is 880 ℃; the advancing time is 200s, the nitrogen flow is 1300sccm, and the oxygen flow is 200 sccm; the anaerobic propulsion process parameters are as follows: the pressure in the furnace is 110mbar, and the propulsion temperature is 880 ℃; the advancing time is 600s, and the nitrogen flow is 1300 sccm;
post-oxidation: has annealing effect and can repair crystal lattice damage.
The technological parameters are as follows: the pressure in the furnace is 50 mbar-150 mbar, the time of the oxidation step is maintained for 200 s-500 s, the flow of the introduced oxygen is 500 sccm-1000 sccm, the flow of the introduced nitrogen is 500 sccm-2000 sccm, and the temperature is 750 ℃ to 800 ℃.
Example 2:
high-temperature oxidation before diffusion: oxidizing a silicon wafer at high temperature, and pre-growing a layer of SiO2 with nano-scale thickness on the surface of the silicon wafer;
The technological parameters are as follows: the pressure in the furnace is 110mbar, the time of the oxidation step is maintained for 150s, the flow of the introduced oxygen is 6000sccm, the flow of the introduced nitrogen is 500 sccm-2000 sccm, and the temperature is 750 ℃.
Low-pressure diffusion: the PN junction is prepared by adopting a step-by-step diffusion method, and the specific diffusion steps are as follows:
the first step is low-pressure diffusion, and the technological parameters are as follows: the pressure in the furnace is 110mbar, and the diffusion temperature is 775 ℃; the diffusion time was 185 s; the nitrogen flow rate is 1200 sccm; the flow rate of the phosphorus oxychloride is 900 sccm; the oxygen flow is 700 sccm;
the process conditions of heat preservation and buffering are as follows: the pressure is 110mbar, the diffusion temperature is 775 ℃, the nitrogen flow is 1200sccm, the oxygen flow is 700sccm, the introduction of phosphorus oxychloride is stopped, and the duration is 60 s;
and secondly, low-pressure diffusion, wherein the process parameters are as follows: the pressure in the furnace is 110mbar, and the diffusion temperature is 785 ℃; the diffusion time was 200 s; the nitrogen flow rate is 1200 sccm; the flow rate of phosphorus oxychloride is 950 sccm; the oxygen flow is 750 sccm;
the first step of temperature rise is advanced, and the technological parameters are as follows: the pressure in the furnace is 110mbar, and the advancing temperature is 850 ℃; the advancing time is 500 s; the nitrogen flow is 1100sccm, and the phosphorus oxychloride flow is 0 sccm; the oxygen flow is 0 sccm;
and the second step of temperature rise propulsion, namely aerobic propulsion is carried out firstly and then anaerobic propulsion is carried out, wherein the aerobic propulsion process parameters are as follows: the pressure in the furnace is 110mbar, and the advancing temperature is 885 ℃; the advancing time is 200s, the nitrogen flow is 1300sccm, and the oxygen flow is 200 sccm; the anaerobic propulsion process parameters are as follows: the pressure in the furnace is 110mbar, and the advancing temperature is 885 ℃; the advancing time is 600s, and the nitrogen flow is 1300 sccm;
Post-oxidation: has annealing effect and can repair crystal lattice damage.
The technological parameters are as follows: the pressure in the furnace is 50 mbar-150 mbar, the time of the oxidation step is maintained for 200 s-500 s, the flow of the introduced oxygen is 500 sccm-1000 sccm, the flow of the introduced nitrogen is 500 sccm-2000 sccm, and the temperature is 750 ℃ to 800 ℃.
Example 3:
high-temperature oxidation before diffusion: oxidizing a silicon wafer at high temperature, and pre-growing a layer of SiO2 with nano-scale thickness on the surface of the silicon wafer;
the technological parameters are as follows: the pressure in the furnace is 110mbar, the time of the oxidation step is maintained for 150s, the flow of the introduced oxygen is 6000sccm, the flow of the introduced nitrogen is 500 sccm-2000 sccm, and the temperature is 750 ℃.
Low-pressure diffusion: the PN junction is prepared by adopting a step-by-step diffusion method, and the specific diffusion steps are as follows:
the first step is low-pressure diffusion, and the technological parameters are as follows: the pressure in the furnace is 110mbar, and the diffusion temperature is 775 ℃; the diffusion time was 185 s; the nitrogen flow rate is 1200 sccm; the flow rate of the phosphorus oxychloride is 900 sccm; the oxygen flow is 700 sccm;
the process conditions of heat preservation and buffering are as follows: the pressure is 110mbar, the diffusion temperature is 775 ℃, the nitrogen flow is 1200sccm, the oxygen flow is 700sccm, the introduction of phosphorus oxychloride is stopped, and the duration is 60 s;
and secondly, low-pressure diffusion, wherein the process parameters are as follows: the pressure in the furnace is 110mbar, and the diffusion temperature is 785 ℃; the diffusion time was 200 s; the nitrogen flow rate is 1200 sccm; the flow rate of phosphorus oxychloride is 950 sccm; the oxygen flow is 750 sccm;
The first step of temperature rise is promoted, and the technological parameters are as follows: the pressure in the furnace is 110mbar, and the advancing temperature is 850 ℃; the propulsion time is 500 s; the nitrogen flow is 1100sccm, and the phosphorus oxychloride flow is 0 sccm; the oxygen flow is 0 sccm;
and the second step of temperature rise propulsion, namely aerobic propulsion is carried out firstly and then anaerobic propulsion is carried out, wherein the aerobic propulsion process parameters are as follows: the pressure in the furnace is 110mbar, and the propelling temperature is 890 ℃; the advancing time is 200s, the nitrogen flow is 1300sccm, and the oxygen flow is 200 sccm; the anaerobic propulsion process parameters are as follows: the pressure in the furnace is 110mbar, and the propelling temperature is 890 ℃; the advancing time is 600s, and the nitrogen flow is 1300 sccm;
post-oxidation: has annealing effect and can repair crystal lattice damage.
The technological parameters are as follows: the pressure in the furnace is 50 mbar-150 mbar, the time of the oxidation step is maintained for 200 s-500 s, the flow of the introduced oxygen is 500 sccm-1000 sccm, the flow of the introduced nitrogen is 500 sccm-2000 sccm, and the temperature is 750 ℃ to 800 ℃.
Before texturing, silicon wafers are accurately sliced, except that the temperature is increased by high-temperature deposition in the second step of a low-pressure diffusion process (2.4) or the time of a high-temperature advancing step is increased differently, the working conditions of other cell procedures are ensured to be the same, and the measured electrical performance parameters are as follows:
Figure DEST_PATH_IMAGE002
compared with the comparative group, the open circuit voltage of the embodiment 1 is higher by 1.1mV, the short circuit current is lower by 6mA, the FF is higher by 0.24, and the conversion efficiency is improved by 0.10 percent. Compared with the comparative group, the open circuit voltage of the embodiment 2 is higher by 0.9mV, the short circuit current is lower by 10mA, the FF is higher by 0.40, and the conversion efficiency is improved by 0.13 percent. Compared with the comparative group, the open circuit voltage of the embodiment 3 is higher by 0.7mV, the short circuit current is lower by 13mA, the FF is higher by 0.51, and the conversion efficiency is improved by 0.16 percent.
Figure DEST_PATH_IMAGE004
The selected battery slice efficiency is 22.3% of the same gear, the model is 60 battery slices, Pmax is the maximum power, and CTM is the percentage of the sum of the assembly output power and the battery slice power. Example 1CTM was 0.13% higher than control, module power 3.9W higher; the CTM of the second embodiment is 0.23% higher than that of the control group, the power of the component is 4.1W higher, and the CTM of the third embodiment is 0.30% higher than that of the control group, and the power of the component is 4.6W higher.

Claims (2)

1. A low-voltage diffusion process of a solar single-crystal high-efficiency PERC + SE battery piece is characterized by comprising the following steps: comprises the following steps
Step one, high-temperature oxidation before diffusion, wherein the process conditions are as follows: the temperature is 650-800 ℃, the nitrogen flow is 500-2000 sccm, the oxygen flow is 500-1000 sccm, the pressure is 50-150 mbar, and the duration is 100-200 s;
step two, preparing PN junction by step diffusion method
The first step is low-pressure diffusion, and the process conditions are as follows: the pressure is 50 mbar-150 mbar, the diffusion temperature is 750 ℃ to 780 ℃, the diffusion time is 100 s-300 s, the nitrogen flow is 1000 sccm-2000 sccm, the phosphorus oxychloride flow is 600 sccm-1000 sccm, and the oxygen flow is 300 sccm-1000 sccm;
the process conditions of heat preservation and buffering are as follows: the pressure is 50 mbar-150 mbar, the diffusion temperature is 750 ℃ to 780 ℃, the nitrogen flow is 1000 sccm-2000 sccm, the oxygen flow is 300 sccm-1000 sccm, the introduction of phosphorus oxychloride is stopped, and the duration is 50 s-70 s;
The second step is low-pressure diffusion, and the process conditions are as follows: the pressure is 50 mbar-150 mbar, the diffusion temperature is 780 ℃ to 800 ℃, the diffusion time is 100 s-300 s, the nitrogen flow is 1000 sccm-2000 sccm, and the phosphorus oxychloride flow is 500 sccm-1000 sccm; the oxygen flow is 300sccm to 1000 sccm;
the first step of temperature rise is carried out, and the process conditions are as follows: the pressure is 50 mbar-150 mbar, and the propulsion temperature is 800 ℃ -900 ℃; the propulsion time is 300-500 s, and the nitrogen flow is 1000-2000 sccm;
and (2) performing second-step heating propulsion, wherein the second-step heating propulsion is divided into two steps, firstly, adopting low-oxygen propulsion, and then adopting anaerobic propulsion, wherein the process conditions of the low-oxygen propulsion are as follows: the pressure is 50 mbar-150 mbar, and the propulsion temperature is 800 ℃ -900 ℃; the propulsion time is 100-300 s, the nitrogen flow is 1000-2000 sccm, and the oxygen flow is 100-500 sccm; the anaerobic propulsion process conditions are as follows: the pressure is 50 mbar-150 mbar, and the propulsion temperature is 800 ℃ -900 ℃; the propulsion time is 400-1700 s, and the nitrogen flow is 1000-2000 sccm;
step three, post-oxidation, wherein the process conditions are as follows: the pressure is 50 mbar-150 mbar, the oxidation time is 200 s-500 s, the flow of the introduced oxygen is 500-1000 sccm, the flow of the nitrogen is 500 sccm-2000 sccm, and the temperature is 750-800 ℃.
2. The low-voltage diffusion process of the solar single-crystal high-efficiency PERC + SE cell piece as claimed in claim 1, wherein the low-voltage diffusion process comprises the following steps: the solar energy single crystal high-efficiency PERC + SE battery piece is a P-type boron-doped single crystal silicon piece.
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