CN112466984B - 太阳能单晶高效perc+se电池片的低压扩散工艺 - Google Patents
太阳能单晶高效perc+se电池片的低压扩散工艺 Download PDFInfo
- Publication number
- CN112466984B CN112466984B CN202011166593.0A CN202011166593A CN112466984B CN 112466984 B CN112466984 B CN 112466984B CN 202011166593 A CN202011166593 A CN 202011166593A CN 112466984 B CN112466984 B CN 112466984B
- Authority
- CN
- China
- Prior art keywords
- sccm
- diffusion
- mbar
- propulsion
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 71
- 239000013078 crystal Substances 0.000 title claims abstract description 12
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 11
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 11
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 11
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 14
- 230000003139 buffering effect Effects 0.000 claims abstract description 6
- 238000004321 preservation Methods 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 82
- 229910052757 nitrogen Inorganic materials 0.000 claims description 41
- 229910052760 oxygen Inorganic materials 0.000 claims description 38
- 239000001301 oxygen Substances 0.000 claims description 38
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
- H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明涉及太阳能电池生产扩散领域。一种太阳能单晶高效PERC+SE电池片的低压扩散工艺,包括如下步骤,扩散前高温氧化,分步扩散法制备PN结,后氧化,其中分步扩散法制备PN结包括第一步低压扩散,保温缓冲,第二步低压扩散,第一步升温推进,第二步升温推进;本发明能制得高表面浓度和低的结深,电性能参数表现为较低开路电压和填充,短路电流较高,使得组件封装之后短波效应较差,从而表现出低的CTM(组件输出功率与电池片功率总和的百分比),本发明的电池效率得到较大的提高。
Description
技术领域
本发明涉及太阳能电池生产扩散领域。
背景技术
随着全球气候变暖,各种可再生能源迅速发展。其中光伏作为重要的可再生能源,近十五年飞速的发展,各类电池百花齐放,其中单晶高效PERC+SE电池已经初步具备平价上网,对全球新能源发展做出重要贡献。
生产太阳能电池的核心步骤是制备PN结,扩散制PN结法是采用加热方法使V族杂质掺入P型硅或Ⅲ族杂质掺入N型硅中。杂质元素在高温时由于热扩散运动进入硅基体,它在基体中的分布视杂质元素种类、初始浓度、扩散温度和时间而导致,这种不同的组合会有不同电池结构,对电池片电性能的表现差异很大。目前硅太阳电池中最常用的V族杂质元素为磷,III族杂质元素为硼。
目前高效PERC+SE电池片低压扩散工艺大多数是采用浅结高方阻,表现出较高表面浓度和低的结深,较低的结深必然会导致欧姆接触较差,纵向传输过程电阻较大,也会使电池段的短波响应较好,短路电流较高。但是组件封装之后短波段的光被玻璃阻挡在外了,导致短波段效应较差,从而表现出低的CTM(组件输出功率与电池片功率总和的百分比)。因此,本发明既可以提高电池片的开路电压和填充因子,又可以使组件端有较高的CTM。
发明内容
本发明所要解决的技术问题是:如何进一步改进PERC+SE电池片低压扩散工艺扩散工艺,从而提高电池效率。
本发明所采用的技术方案是:一种太阳能单晶高效PERC+SE电池片的低压扩散工艺,包括如下步骤
步骤一、扩散前高温氧化,工艺条件为:温度650℃~800℃,氮气流量500sccm~2000sccm,氧气流量为500sccm~1000sccm,压强为50mbar~150mbar,持续时间100s~200s;
步骤二、分步扩散法制备PN结
第一步低压扩散,工艺条件为:压强为50mbar~150mbar,扩散温度为750℃~ 780℃,扩散时间为100s~300s,氮气流量为1000sccm~2000 sccm,三氯氧磷流量为 600sccm~1000sccm,氧气流量为300sccm~1000sccm;
保温缓冲,工艺条件为:压强为50mbar~150mbar,扩散温度为750℃~ 780℃,氮气流量为1000sccm~2000 sccm,氧气流量为300sccm~1000sccm,停止通入三氯氧磷,持续时间50 s~70s;
第二步低压扩散,工艺条件为:压强为50mbar~150mbar,扩散温度为780℃~ 800℃,扩散时间为100s~300s,氮气流量为1000sccm~2000 sccm,三氯氧磷流量为 500sccm~1000sccm;氧气流量为300sccm~1000sccm;
第一步升温推进,工艺条件为:压强为50mbar~150mbar,推进温度为800℃~ 900℃;推进时间为300s~500s,氮气流量为1000sccm~2000 sccm;
第二步升温推进,工艺条件为:压强为50mbar~150mbar,推进温度为800℃~ 900℃;推进时间为500s~2000s,氮气流量为1000sccm~2000 sccm,氧气流量为0~500sccm;
步骤三、后氧化,工艺条件为:压强为50mbar~150mbar,氧化时间200s~500s,通入氧气流量为500~1000sccm,氮气流量为500sccm~2000sccm,温度750℃~800℃。
步骤二中的第二步升温推进分为两步,首先,采用低氧推进,然后再采用无氧推进,低氧推进工艺条件为:压强为50mbar~150mbar,推进温度为800℃~ 900℃;推进时间为100s~300s,氮气流量为1000sccm~2000 sccm,氧气流量为100~500sccm;无氧推进工艺条件为:压强为50mbar~150mbar,推进温度为800℃~ 900℃;推进时间为400s~1700s,氮气流量为1000sccm~2000 sccm。
太阳能单晶高效PERC+SE电池片为P型掺硼单晶硅片。
本发明的有益效果是:本发明能制得高表面浓度和低的结深,电性能参数表现为较低开路电压和填充,短路电流较高,使得组件封装之后短波效应较差,从而表现出低的CTM(组件输出功率与电池片功率总和的百分比),本发明的电池效率得到较大的提高。
具体实施方式
实施例1:
扩散前高温氧化:高温氧化硅片,在硅片表面预生长一层纳米级厚度的SiO2;
工艺参数为:炉内压强为110mbar,氧化步时间维持150s,通入氧气流量为6000sccm,通入氮气流量为500sccm~2000sccm,温度750℃。
低压扩散:采用分步扩散法制备PN结,具体扩散步骤如下:
第一步低压扩散,工艺参数为:炉内压强为110 mbar,扩散温度为775℃;扩散时间为185s;氮气流量为1200sccm;三氯氧磷流量为 900sccm;氧气流量为700sccm;
保温缓冲,工艺条件为:压强为110mbar,扩散温度为775℃,氮气流量为1200sccm,氧气流量为700sccm,停止通入三氯氧磷,持续时间60s;
第二步低压扩散,工艺参数为:炉内压强为110mbar,扩散温度为785℃;扩散时间为200s;氮气流量为1200 sccm;三氯氧磷流量为 950sccm;氧气流量为750sccm;
第一步升温推进,工艺参数为:炉内压强为110mbar,推进温度为850℃;推进时间为500s;氮气流量为1100sccm,三氯氧磷流量为 0sccm,氧气流量为0sccm;
第二步升温推进,先进行有氧推进,后进行无氧推进,有氧推进工艺参数为:炉内压强为110mbar,推进温度为880℃;推进时间为200s,氮气流量为1300sccm,氧气流量为200sccm;无氧推进工艺参数为:炉内压强为110mbar,推进温度为880℃;推进时间为600s,氮气流量为1300sccm;
后氧化:具有退火效果,可以修复晶格损伤等。
工艺参数为:炉内压强为50mbar~150mbar,氧化步时间维持200s~500s,通入氧气流量为500sccm~1000sccm,通入氮气流量为500sccm~2000sccm,温度750℃~800℃。
实施例2:
扩散前高温氧化:高温氧化硅片,在硅片表面预生长一层纳米级厚度的SiO2;
工艺参数为:炉内压强为110mbar,氧化步时间维持150s,通入氧气流量为6000sccm,通入氮气流量为500sccm~2000sccm,温度750℃。
低压扩散:采用分步扩散法制备PN结,具体扩散步骤如下:
第一步低压扩散,工艺参数为:炉内压强为110 mbar,扩散温度为775℃;扩散时间为185s;氮气流量为1200sccm;三氯氧磷流量为 900sccm;氧气流量为700sccm;
保温缓冲,工艺条件为:压强为110mbar,扩散温度为775℃,氮气流量为1200sccm,氧气流量为700sccm,停止通入三氯氧磷,持续时间60s;
第二步低压扩散,工艺参数为:炉内压强为110mbar,扩散温度为785℃;扩散时间为200s;氮气流量为1200 sccm;三氯氧磷流量为 950sccm;氧气流量为750sccm;
第一步升温推进,工艺参数为:炉内压强为110mbar,推进温度为850℃;推进时间为500s;氮气流量为1100sccm,三氯氧磷流量为 0sccm;氧气流量为0sccm;
第二步升温推进,先进行有氧推进,后进行无氧推进,有氧推进工艺参数为:炉内压强为110mbar,推进温度为885℃;推进时间为200s,氮气流量为1300sccm,氧气流量为200sccm;无氧推进工艺参数为:炉内压强为110mbar,推进温度为885℃;推进时间为600s,氮气流量为1300sccm;
后氧化:具有退火效果,可以修复晶格损伤等。
工艺参数为:炉内压强为50mbar~150mbar,氧化步时间维持200s~500s,通入氧气流量为500sccm~1000sccm,通入氮气流量为500sccm~2000sccm,温度750℃~800℃。
实施例3:
扩散前高温氧化:高温氧化硅片,在硅片表面预生长一层纳米级厚度的SiO2;
工艺参数为:炉内压强为110mbar,氧化步时间维持150s,通入氧气流量为6000sccm,通入氮气流量为500sccm~2000sccm,温度750℃。
低压扩散:采用分步扩散法制备PN结,具体扩散步骤如下:
第一步低压扩散,工艺参数为:炉内压强为110 mbar,扩散温度为775℃;扩散时间为185s;氮气流量为1200sccm;三氯氧磷流量为 900sccm;氧气流量为700sccm;
保温缓冲,工艺条件为:压强为110mbar,扩散温度为775℃,氮气流量为1200sccm,氧气流量为700sccm,停止通入三氯氧磷,持续时间60s;
第二步低压扩散,工艺参数为:炉内压强为110mbar,扩散温度为785℃;扩散时间为200s;氮气流量为1200 sccm;三氯氧磷流量为 950sccm;氧气流量为750sccm;
第一步升温推进,工艺参数为:炉内压强为110mbar,推进温度为850℃;推进时间为500s;氮气流量为1100sccm,三氯氧磷流量为 0sccm;氧气流量为0sccm;
第二步升温推进,先进行有氧推进,后进行无氧推进,有氧推进工艺参数为:炉内压强为110mbar,推进温度为890℃;推进时间为200s,氮气流量为1300sccm,氧气流量为200sccm;无氧推进工艺参数为:炉内压强为110mbar,推进温度为890℃;推进时间为600s,氮气流量为1300sccm;
后氧化:具有退火效果,可以修复晶格损伤等。
工艺参数为:炉内压强为50mbar~150mbar,氧化步时间维持200s~500s,通入氧气流量为500sccm~1000sccm,通入氮气流量为500sccm~2000sccm,温度750℃~800℃。
制绒前将硅片精准分片,除低压扩散工艺(2.4)第二步高温沉积增加温度或高温推进步时间增加不同外,其余电池片工序条件都确保一样,测得的电性能参数如下:
与对比组相比实施例1开路电压高1.1mV,短路电流低6mA,FF高0.24,转换效率提高0.10%。与对比组相比实施例2开路电压高0.9mV,短路电流低10mA,FF高0.40,转换效率提高0.13%。与对比组相比实施例3开路电压高了0.7mV,短路电流低13mA,FF高0.51,转换效率提高0.16%。
其中,电池片效率所选是同一个档位22.3%,版型为60片电池片,Pmax是最大功率,CTM为组件输出功率与电池片功率总和的百分比。实施例1CTM较对比组高0.13%,组件功率高3.9W;实施例二CTM较对比组高0.23%,组件功率高4.1W,实施例三CTM较对比组高0.30%,组件功率高4.6W。
Claims (2)
1.一种太阳能单晶高效PERC+SE电池片的低压扩散工艺,其特征在于:包括如下步骤
步骤一、扩散前高温氧化,工艺条件为:温度650℃~800℃,氮气流量500sccm~2000sccm,氧气流量为500sccm~1000sccm,压强为50mbar~150mbar,持续时间100s~200s;
步骤二、分步扩散法制备PN结
第一步低压扩散,工艺条件为:压强为50mbar~150mbar,扩散温度为750℃~ 780℃,扩散时间为100s~300s,氮气流量为1000sccm~2000 sccm,三氯氧磷流量为 600sccm~1000sccm,氧气流量为300sccm~1000sccm;
保温缓冲,工艺条件为:压强为50mbar~150mbar,扩散温度为750℃~ 780℃,氮气流量为1000sccm~2000 sccm,氧气流量为300sccm~1000sccm,停止通入三氯氧磷,持续时间50 s~70s;
第二步低压扩散,工艺条件为:压强为50mbar~150mbar,扩散温度为780℃~ 800℃,扩散时间为100s~300s,氮气流量为1000sccm~2000 sccm,三氯氧磷流量为 500sccm~1000sccm;氧气流量为300sccm~1000sccm;
第一步升温推进,工艺条件为:压强为50mbar~150mbar,推进温度为800℃~ 900℃;推进时间为300s~500s,氮气流量为1000sccm~2000 sccm;
第二步升温推进,第二步升温推进分为两步,首先,采用低氧推进,然后再采用无氧推进,低氧推进工艺条件为:压强为50mbar~150mbar,推进温度为800℃~ 900℃;推进时间为100s~300s,氮气流量为1000sccm~2000 sccm,氧气流量为100~500sccm;无氧推进工艺条件为:压强为50mbar~150mbar,推进温度为800℃~ 900℃;推进时间为400s~1700s,氮气流量为1000sccm~2000 sccm;
步骤三、后氧化,工艺条件为:压强为50mbar~150mbar,氧化时间200s~500s,通入氧气流量为500~1000sccm,氮气流量为500sccm~2000sccm,温度750℃~800℃。
2.根据权利要求1所述的一种太阳能单晶高效PERC+SE电池片的低压扩散工艺,其特征在于:太阳能单晶高效PERC+SE电池片为P型掺硼单晶硅片。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011166593.0A CN112466984B (zh) | 2020-10-27 | 2020-10-27 | 太阳能单晶高效perc+se电池片的低压扩散工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011166593.0A CN112466984B (zh) | 2020-10-27 | 2020-10-27 | 太阳能单晶高效perc+se电池片的低压扩散工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112466984A CN112466984A (zh) | 2021-03-09 |
CN112466984B true CN112466984B (zh) | 2022-07-29 |
Family
ID=74835993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011166593.0A Active CN112466984B (zh) | 2020-10-27 | 2020-10-27 | 太阳能单晶高效perc+se电池片的低压扩散工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112466984B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114497283A (zh) * | 2022-02-07 | 2022-05-13 | 通威太阳能(安徽)有限公司 | 一种用于硅片的扩散方法及光伏硅片 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105070787A (zh) * | 2015-08-18 | 2015-11-18 | 东莞南玻光伏科技有限公司 | 晶体硅太阳能电池及其扩散方法 |
CN106784153A (zh) * | 2016-12-30 | 2017-05-31 | 常州亿晶光电科技有限公司 | 太阳能电池片低压扩散工艺 |
CN109449246B (zh) * | 2018-09-05 | 2021-03-05 | 浙江爱旭太阳能科技有限公司 | 一种硅晶体片磷扩散方法 |
CN109980047B (zh) * | 2019-03-29 | 2021-02-12 | 山西潞安太阳能科技有限责任公司 | 一种匹配选择性发射极的低压扩散工艺 |
-
2020
- 2020-10-27 CN CN202011166593.0A patent/CN112466984B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN112466984A (zh) | 2021-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL2022765B1 (en) | Step-by-Step Doping Method of Phosphorous for High-efficiency and Low-cost Crystalline Silicon Cell | |
US7611977B2 (en) | Process of phosphorus diffusion for manufacturing solar cell | |
CN109449246B (zh) | 一种硅晶体片磷扩散方法 | |
CN100536177C (zh) | 晶体硅太阳能电池的热处理方法 | |
CN102723266B (zh) | 太阳能电池扩散方法 | |
CN105895738A (zh) | 一种钝化接触n型太阳能电池及制备方法和组件、系统 | |
CN105304753A (zh) | N型电池硼扩散工艺 | |
CN105780127B (zh) | 一种晶体硅太阳能电池的磷扩散方法 | |
CN101587919A (zh) | 晶体硅太阳能电池选择性发射结的制备方法 | |
CN107293617A (zh) | 一种高效低成本太阳能电池扩散工艺 | |
CN102637778A (zh) | 一种pn结的扩散方法 | |
CN102130211B (zh) | 一种改善太阳能电池表面扩散的方法 | |
CN114639744A (zh) | 太阳能电池及其制备方法 | |
CN112466984B (zh) | 太阳能单晶高效perc+se电池片的低压扩散工艺 | |
Feldmann et al. | Industrial TOPCon solar cells realized by a PECVD tube process | |
CN102569532A (zh) | 选择性发射极电池二次沉积扩散工艺 | |
WO2014026293A1 (en) | Built-in vertical doping structures for the monolithic integration of tunnel junctions in photovoltaic structures | |
Schmich et al. | Silicon CVD deposition for low cost applications in photovoltaics | |
CN103199152A (zh) | 一种晶体硅片的磷扩散方法 | |
CN103178157A (zh) | 一种选择性发射极多晶硅太阳电池的制备方法 | |
CN110739366A (zh) | 一种修复perc太阳能电池背膜激光开槽损伤的方法 | |
CN113555468B (zh) | 一种提升n型硅片硼扩散方阻均匀性的工艺 | |
CN116072765A (zh) | 太阳电池及其制作方法 | |
CN113808927A (zh) | 一种TOPCon电池磷扩散工艺 | |
CN110943141A (zh) | 硅片的扩散方法、太阳能电池及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |