CN112466984A - 太阳能单晶高效perc+se电池片的低压扩散工艺 - Google Patents

太阳能单晶高效perc+se电池片的低压扩散工艺 Download PDF

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CN112466984A
CN112466984A CN202011166593.0A CN202011166593A CN112466984A CN 112466984 A CN112466984 A CN 112466984A CN 202011166593 A CN202011166593 A CN 202011166593A CN 112466984 A CN112466984 A CN 112466984A
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刘杰
张泽泽
申争浩
刘栩瑞
刘照敏
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Shanxi Luan Solar Energy Technology Co Ltd
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Abstract

本发明涉及太阳能电池生产扩散领域。一种太阳能单晶高效PERC+SE电池片的低压扩散工艺，包括如下步骤，扩散前高温氧化，分步扩散法制备PN结，后氧化，其中分步扩散法制备PN结包括第一步低压扩散，保温缓冲，第二步低压扩散，第一步升温推进，第二步升温推进；本发明能制得高表面浓度和低的结深，电性能参数表现为较低开路电压和填充，短路电流较高，使得组件封装之后短波效应较差，从而表现出低的CTM（组件输出功率与电池片功率总和的百分比），本发明的电池效率得到较大的提高。

Description

太阳能单晶高效PERC+SE电池片的低压扩散工艺
技术领域
本发明涉及太阳能电池生产扩散领域。
背景技术
随着全球气候变暖，各种可再生能源迅速发展。其中光伏作为重要的可再生能源，近十五年飞速的发展，各类电池百花齐放，其中单晶高效PERC+SE电池已经初步具备平价上网，对全球新能源发展做出重要贡献。
生产太阳能电池的核心步骤是制备PN结，扩散制PN结法是采用加热方法使V族杂质掺入P型硅或Ⅲ族杂质掺入N型硅中。杂质元素在高温时由于热扩散运动进入硅基体，它在基体中的分布视杂质元素种类、初始浓度、扩散温度和时间而导致，这种不同的组合会有不同电池结构，对电池片电性能的表现差异很大。目前硅太阳电池中最常用的V族杂质元素为磷，III族杂质元素为硼。
目前高效PERC+SE电池片低压扩散工艺大多数是采用浅结高方阻，表现出较高表面浓度和低的结深，较低的结深必然会导致欧姆接触较差，纵向传输过程电阻较大，也会使电池段的短波响应较好，短路电流较高。但是组件封装之后短波段的光被玻璃阻挡在外了，导致短波段效应较差，从而表现出低的CTM（组件输出功率与电池片功率总和的百分比）。因此，本发明既可以提高电池片的开路电压和填充因子，又可以使组件端有较高的CTM。
发明内容
本发明所要解决的技术问题是：如何进一步改进PERC+SE电池片低压扩散工艺扩散工艺，从而提高电池效率。
本发明所采用的技术方案是：一种太阳能单晶高效PERC+SE电池片的低压扩散工艺，包括如下步骤
步骤一、扩散前高温氧化，工艺条件为：温度650℃～800℃，氮气流量500sccm～2000sccm，氧气流量为500sccm～1000sccm，压强为50mbar～150mbar，持续时间100s～200s；
步骤二、分步扩散法制备PN结
第一步低压扩散，工艺条件为：压强为50mbar～150mbar，扩散温度为750℃～ 780℃，扩散时间为100s～300s，氮气流量为1000sccm～2000 sccm，三氯氧磷流量为 600sccm～1000sccm，氧气流量为300sccm～1000sccm；
保温缓冲，工艺条件为：压强为50mbar～150mbar，扩散温度为750℃～ 780℃，氮气流量为1000sccm～2000 sccm，氧气流量为300sccm～1000sccm，停止通入三氯氧磷，持续时间50 s～70s；
第二步低压扩散，工艺条件为：压强为50mbar～150mbar，扩散温度为780℃～ 800℃，扩散时间为100s～300s，氮气流量为1000sccm～2000 sccm，三氯氧磷流量为 500sccm～1000sccm；氧气流量为300sccm～1000sccm；
第一步升温推进，工艺条件为：压强为50mbar～150mbar，推进温度为800℃～ 900℃；推进时间为300s～500s，氮气流量为1000sccm～2000 sccm；
第二步升温推进，工艺条件为：压强为50mbar～150mbar，推进温度为800℃～ 900℃；推进时间为500s～2000s，氮气流量为1000sccm～2000 sccm，氧气流量为0～500sccm；
步骤三、后氧化，工艺条件为：压强为50mbar～150mbar，氧化时间200s～500s，通入氧气流量为500～1000sccm，氮气流量为500sccm～2000sccm，温度750℃～800℃。
步骤二中的第二步升温推进分为两步，首先，采用低氧推进，然后再采用无氧推进，低氧推进工艺条件为：压强为50mbar～150mbar，推进温度为800℃～ 900℃；推进时间为100s～300s，氮气流量为1000sccm～2000 sccm，氧气流量为100～500sccm；无氧推进工艺条件为：压强为50mbar～150mbar，推进温度为800℃～ 900℃；推进时间为400s～1700s，氮气流量为1000sccm～2000 sccm。
太阳能单晶高效PERC+SE电池片为P型掺硼单晶硅片。
本发明的有益效果是：本发明能制得高表面浓度和低的结深，电性能参数表现为较低开路电压和填充，短路电流较高，使得组件封装之后短波效应较差，从而表现出低的CTM（组件输出功率与电池片功率总和的百分比），本发明的电池效率得到较大的提高。
具体实施方式
实施例1：
扩散前高温氧化：高温氧化硅片，在硅片表面预生长一层纳米级厚度的SiO2；
工艺参数为：炉内压强为110mbar，氧化步时间维持150s，通入氧气流量为6000sccm，通入氮气流量为500sccm～2000sccm，温度750℃。
低压扩散：采用分步扩散法制备PN结，具体扩散步骤如下：
第一步低压扩散，工艺参数为：炉内压强为110 mbar，扩散温度为775℃；扩散时间为185s；氮气流量为1200sccm；三氯氧磷流量为 900sccm；氧气流量为700sccm；
保温缓冲，工艺条件为：压强为110mbar，扩散温度为775℃，氮气流量为1200 sccm，氧气流量为700sccm，停止通入三氯氧磷，持续时间60s；
第二步低压扩散，工艺参数为：炉内压强为110mbar，扩散温度为785℃；扩散时间为200s；氮气流量为1200 sccm；三氯氧磷流量为 950sccm；氧气流量为750sccm；
第一步升温推进，工艺参数为：炉内压强为110mbar，推进温度为850℃；推进时间为500s；氮气流量为1100sccm，三氯氧磷流量为 0sccm，氧气流量为0sccm；
第二步升温推进，先进行有氧推进，后进行无氧推进，有氧推进工艺参数为：炉内压强为110mbar，推进温度为880℃；推进时间为200s，氮气流量为1300sccm，氧气流量为200sccm；无氧推进工艺参数为：炉内压强为110mbar，推进温度为880℃；推进时间为600s，氮气流量为1300sccm；
后氧化：具有退火效果，可以修复晶格损伤等。
工艺参数为：炉内压强为50mbar～150mbar，氧化步时间维持200s～500s，通入氧气流量为500sccm～1000sccm，通入氮气流量为500sccm～2000sccm，温度750℃～800℃。
实施例2：
扩散前高温氧化：高温氧化硅片，在硅片表面预生长一层纳米级厚度的SiO2；
工艺参数为：炉内压强为110mbar，氧化步时间维持150s，通入氧气流量为6000sccm，通入氮气流量为500sccm～2000sccm，温度750℃。
低压扩散：采用分步扩散法制备PN结，具体扩散步骤如下：
第一步低压扩散，工艺参数为：炉内压强为110 mbar，扩散温度为775℃；扩散时间为185s；氮气流量为1200sccm；三氯氧磷流量为 900sccm；氧气流量为700sccm；
保温缓冲，工艺条件为：压强为110mbar，扩散温度为775℃，氮气流量为1200 sccm，氧气流量为700sccm，停止通入三氯氧磷，持续时间60s；
第二步低压扩散，工艺参数为：炉内压强为110mbar，扩散温度为785℃；扩散时间为200s；氮气流量为1200 sccm；三氯氧磷流量为 950sccm；氧气流量为750sccm；
第一步升温推进，工艺参数为：炉内压强为110mbar，推进温度为850℃；推进时间为500s；氮气流量为1100sccm，三氯氧磷流量为 0sccm；氧气流量为0sccm；
第二步升温推进，先进行有氧推进，后进行无氧推进，有氧推进工艺参数为：炉内压强为110mbar，推进温度为885℃；推进时间为200s，氮气流量为1300sccm，氧气流量为200sccm；无氧推进工艺参数为：炉内压强为110mbar，推进温度为885℃；推进时间为600s，氮气流量为1300sccm；
后氧化：具有退火效果，可以修复晶格损伤等。
工艺参数为：炉内压强为50mbar～150mbar，氧化步时间维持200s～500s，通入氧气流量为500sccm～1000sccm，通入氮气流量为500sccm～2000sccm，温度750℃～800℃。
实施例3：
扩散前高温氧化：高温氧化硅片，在硅片表面预生长一层纳米级厚度的SiO2；
工艺参数为：炉内压强为110mbar，氧化步时间维持150s，通入氧气流量为6000sccm，通入氮气流量为500sccm～2000sccm，温度750℃。
低压扩散：采用分步扩散法制备PN结，具体扩散步骤如下：
第一步低压扩散，工艺参数为：炉内压强为110 mbar，扩散温度为775℃；扩散时间为185s；氮气流量为1200sccm；三氯氧磷流量为 900sccm；氧气流量为700sccm；
保温缓冲，工艺条件为：压强为110mbar，扩散温度为775℃，氮气流量为1200 sccm，氧气流量为700sccm，停止通入三氯氧磷，持续时间60s；
第二步低压扩散，工艺参数为：炉内压强为110mbar，扩散温度为785℃；扩散时间为200s；氮气流量为1200 sccm；三氯氧磷流量为 950sccm；氧气流量为750sccm；
第一步升温推进，工艺参数为：炉内压强为110mbar，推进温度为850℃；推进时间为500s；氮气流量为1100sccm，三氯氧磷流量为 0sccm；氧气流量为0sccm；
第二步升温推进，先进行有氧推进，后进行无氧推进，有氧推进工艺参数为：炉内压强为110mbar，推进温度为890℃；推进时间为200s，氮气流量为1300sccm，氧气流量为200sccm；无氧推进工艺参数为：炉内压强为110mbar，推进温度为890℃；推进时间为600s，氮气流量为1300sccm；
后氧化：具有退火效果，可以修复晶格损伤等。
工艺参数为：炉内压强为50mbar～150mbar，氧化步时间维持200s～500s，通入氧气流量为500sccm～1000sccm，通入氮气流量为500sccm～2000sccm，温度750℃～800℃。
制绒前将硅片精准分片，除低压扩散工艺(2.4)第二步高温沉积增加温度或高温推进步时间增加不同外，其余电池片工序条件都确保一样，测得的电性能参数如下：
Figure DEST_PATH_IMAGE002
与对比组相比实施例1开路电压高1.1mV，短路电流低6mA，FF高0.24，转换效率提高0.10%。与对比组相比实施例2开路电压高0.9mV，短路电流低10mA，FF高0.40，转换效率提高0.13%。与对比组相比实施例3开路电压高了0.7mV，短路电流低13mA，FF高0.51，转换效率提高0.16%。
Figure DEST_PATH_IMAGE004
其中，电池片效率所选是同一个档位22.3%，版型为60片电池片，Pmax是最大功率，CTM为组件输出功率与电池片功率总和的百分比。实施例1CTM较对比组高0.13%，组件功率高3.9W；实施例二CTM较对比组高0.23%，组件功率高4.1W，实施例三CTM较对比组高0.30%，组件功率高4.6W。

Claims (3)

1.一种太阳能单晶高效PERC+SE电池片的低压扩散工艺，其特征在于：包括如下步骤
步骤一、扩散前高温氧化，工艺条件为：温度650℃～800℃，氮气流量500sccm～2000sccm，氧气流量为500sccm～1000sccm，压强为50mbar～150mbar，持续时间100s～200s；
步骤二、分步扩散法制备PN结
第一步低压扩散，工艺条件为：压强为50mbar～150mbar，扩散温度为750℃～ 780℃，扩散时间为100s～300s，氮气流量为1000sccm～2000 sccm，三氯氧磷流量为 600sccm～1000sccm，氧气流量为300sccm～1000sccm；
保温缓冲，工艺条件为：压强为50mbar～150mbar，扩散温度为750℃～ 780℃，氮气流量为1000sccm～2000 sccm，氧气流量为300sccm～1000sccm，停止通入三氯氧磷，持续时间50 s～70s；
第二步低压扩散，工艺条件为：压强为50mbar～150mbar，扩散温度为780℃～ 800℃，扩散时间为100s～300s，氮气流量为1000sccm～2000 sccm，三氯氧磷流量为 500sccm～1000sccm；氧气流量为300sccm～1000sccm；
第一步升温推进，工艺条件为：压强为50mbar～150mbar，推进温度为800℃～ 900℃；推进时间为300s～500s，氮气流量为1000sccm～2000 sccm；
第二步升温推进，工艺条件为：压强为50mbar～150mbar，推进温度为800℃～ 900℃；推进时间为500s～2000s，氮气流量为1000sccm～2000 sccm，氧气流量为0～500sccm；
步骤三、后氧化，工艺条件为：压强为50mbar～150mbar，氧化时间200s～500s，通入氧气流量为500～1000sccm，氮气流量为500sccm～2000sccm，温度750℃～800℃。
2.根据权利要求1所述的一种太阳能单晶高效PERC+SE电池片的低压扩散工艺，其特征在于：步骤二中的第二步升温推进分为两步，首先，采用低氧推进，然后再采用无氧推进，低氧推进工艺条件为：压强为50mbar～150mbar，推进温度为800℃～ 900℃；推进时间为100s～300s，氮气流量为1000sccm～2000 sccm，氧气流量为100～500sccm；无氧推进工艺条件为：压强为50mbar～150mbar，推进温度为800℃～ 900℃；推进时间为400s～1700s，氮气流量为1000sccm～2000 sccm。
3.根据权利要求1所述的一种太阳能单晶高效PERC+SE电池片的低压扩散工艺，其特征在于：太阳能单晶高效PERC+SE电池片为P型掺硼单晶硅片。
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