CN105244412B - A kind of passivating method of N-type crystal silicon battery boron emitter stage - Google Patents
A kind of passivating method of N-type crystal silicon battery boron emitter stage Download PDFInfo
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- CN105244412B CN105244412B CN201510562071.5A CN201510562071A CN105244412B CN 105244412 B CN105244412 B CN 105244412B CN 201510562071 A CN201510562071 A CN 201510562071A CN 105244412 B CN105244412 B CN 105244412B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 73
- 239000010703 silicon Substances 0.000 title claims abstract description 73
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000013078 crystal Substances 0.000 title claims abstract description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 30
- 239000011574 phosphorus Substances 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 230000009849 deactivation Effects 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 8
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 7
- 229910004205 SiNX Inorganic materials 0.000 claims description 7
- 239000005297 pyrex Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000009776 industrial production Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 235000008216 herbs Nutrition 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of passivating method of N-type crystal silicon battery boron emitter stage, its passivation step is as follows：Phosphorus doping N+ layers and P+ layers of boron emitter stage are formed respectively on the two sides of N-type silicon substrate first；Then N-type silicon substrate is carried out into oxidative deactivation treatment, silicon oxide film is generated respectively on phosphorus doping N+ layers and boron emitter stage P+ layers；Finally SiN is deposited on the silicon oxide film on N-type silicon substrate two sidesxFilm；By the use of silica and silicon nitride stack film as the passivating film of boron emitter stage, wherein silica prepares generation to the present invention by low-temperature dry oxidation, and thickness is 2~10nm, and silicon nitride is prepared using PECVD methods；Film system preparation technology is relatively simple for this passivation, and process controllability is strong, equipment cost is low, consumables cost is low, can be suitable to large-scale industrial production with current crystal silicon cell manufacturing line hardware compatibility.
Description
Technical field
The present invention relates to manufacture of solar cells technical field, particularly a kind of passivation of N-type crystal silicon battery boron emitter stage
Method.
Background technology
Current crystal silicon cell is the main product in solar cell market, and crystal silicon solar batteries are from material matrix type
It is upper to be divided into p-type crystal silicon battery and N-type crystal silicon battery again.Relative to P type monocrystalline silicon batteries, n type single crystal silicon battery has light
The features such as induced attenuation is small, resistance to metal impurity con performance is good, minority carrierdiffusion length is long, has huge in terms of improved efficiency
Potentiality.
For the N-type crystal silicon battery of simple structure, preparation flow be typically making herbs into wool->Boron diffusion->Phosphorus diffusion/note
Enter->Passivation->Antireflective coating deposition->Electrode print, wherein to boron emitter stage（P+ layers）Performance of the passivation for battery
It is most important.Thin film material system and technical method currently for the passivation of boron emitter stage have a lot, useful atomic layer deposition method
（ALD）Prepare aluminum oxide（Al2O3）Film is passivated；Using plasma enhanced chemical vapor deposition（PECVD）Method is deposited
Al2O3Thin film passivation；Use amorphous silicon hydride（α-Si:H）Film come realize passivation；Made using being processed in salpeter solution
The methods such as standby oxidative deactivation film.But traditional ALD equipment has that growth rate is slow, stock utilization is low and equipment price is high in itself
Expensive shortcoming, the solar cell industry with large-scale production is incompatible, only with technological progress and the reduction of equipment cost, even
The ALD equipment and Al of continuous sedimentation type2O3Thin film passivation technique could enter manufacture of solar cells.PECVD prepares α-Si:H films
There is also that chemical material utilization rate is low and α-Si:H films H after oversintering is lost in the problem that inactivating performance declines.Therefore, seek
The passivating method that inactivating performance is good, process controllability is strong, equipment cost is low, consumables cost is low is extensive for N-type cell
Promote significant.
The content of the invention
The present invention is intended to provide a kind of passivating method of N-type crystal silicon battery boron emitter stage, using silica and silicon nitride
Laminate film as boron emitter stage passivating film, wherein silica by low-temperature dry oxidation prepare generation, thickness be 2~
10nm, silicon nitride is prepared using PECVD methods.Film system preparation technology is relatively simple for this passivation, process controllability is strong, equipment into
This low, consumables cost is low, can be suitable to large-scale industrial production with current crystal silicon cell manufacturing line hardware compatibility.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：
A kind of passivating method of N-type crystal silicon battery boron emitter stage, it is characterised in that passivation step is as follows：
（1）On the two sides of N-type silicon substrate by diffusion or ion implanting twice, formed respectively on the two sides of N-type silicon substrate
Phosphorus doping N+ layers and P+ layers of boron emitter stage；
（2）Step（1）In N-type silicon substrate be placed in oxidative deactivation treatment carried out in high purity oxygen gas atmosphere, by low temperature
Thermal oxide generates one layer of silicon oxide film respectively on phosphorus doping P+ layers and phosphorus doping N+ layers；
（3）SiN is deposited on the silicon oxide film on N-type silicon substrate two sidesxFilm.
Step（1）In diffusion twice refer to：N-type silicon substrate is spread by high temperature boron and realizes that N-type silicon substrate one side boron is mixed
It is miscellaneous to prepare P+ layers of boron emitter stage；By wet etching remove boron emitter stage P+ layer surfaces Pyrex layer, back side diffusion around
Layer is penetrated, phosphorus diffusion mask layer is prepared on P+ layers of boron emitter stage, then carries out phosphorus to the another side of N-type silicon substrate and diffuse to form phosphorus mixing
Miscellaneous N+ layers, phosphorosilicate glass layer and boron using chemical etching method removal phosphorus doping N+ layer surfaces launch the diffusion mask of pole-face
Layer；Step（1）In ion implanting refer to by N-type silicon substrate by high temperature boron spread realize N-type silicon substrate one side boron adulterate system
It is standby go out P+ layers of boron emitter stage；Pyrex layer, the back side diffusion diffraction layer of boron emitter stage P+ layer surfaces are removed by wet etching,
The another side to N-type silicon substrate carries out phosphorus injection again, activates to form phosphorus doping N+ layers by process annealing.
Step（2）The thickness of the silicon oxide film of middle generation is 2~10nm.
Step（2）The oxidizing temperature of middle oxidative deactivation treatment is 650 DEG C -790 DEG C, and oxygen flow is 0.3-10slm, oxygen
The change time is 5min-60min.
Step（3）In deposition deposited using plasma reinforced chemical vapour deposition method, by control deposition bar
Part, makes SiNxH is rich in film.
Step（3）In depositing temperature be 400-450 DEG C, sedimentation time is 8-15min, SiH during deposition4Flow is
500sccm-1700sccm, NH3Flow is 4000sccm-8000sccm, and radio-frequency power is 5000W-7000W, deposition pressure
It is 1300-2000mTorr, prepares SiNxFilm thickness is 65-75nm.
The beneficial effects of the invention are as follows：
By the use of silica/silicon nitride stack as the passivation layer of N-type cell boron emitter stage, silica has in process
Prepared by low-temperature dry oxidation technology, silicon nitride is prepared by PECVD technique.Low-temperature dry oxidation can spread in boron emitter stage and phosphorus
Thin layer of silicon oxide is formed on layer simultaneously, the dangling bond density on boron emitter stage and phosphorus-diffused layer surface can be effectively reduced, it is right to realize
It is passivated while battery front side and the back side；The H in battery prepares sintering process of the silicon nitride film rich in H diffuses to Si/ simultaneously
SiO2Interface, the dangling bond at boundary saturation is further passivated to boron emitter stage and phosphorus doping layer surface.Prepare oxide passivated film
Oxidizing temperature at 650 DEG C -790 DEG C, temperature is relatively low, to boron diffusion and phosphorus diffusion concentration curve distribution influence it is little, it is easy to
Control；Avoid the pyroprocess of silicon chip experience conventional dry oxidation（850 DEG C~1100 DEG C）, can keep minority carrier life time not because
Pyroprocess and decay.Additionally, the equipment that oxidation is used is tube furnace, it is crystal silicon battery producing line equipment the most common, with original
Sublayer depositing device and preparation Al2O3The PECVD device of film is compared, and cost of equipment and consumptive material expense are all very low, therefore low temperature is dry
Method oxidative deactivation is a kind of simple, economic process, it is easy to mass produced.
Brief description of the drawings
Fig. 1 is passivation film structural representation of the invention；
Wherein, accompanying drawing 1 is labeled as：1 is the SiN on silicon chip two sidesxLayer；2 is the SiO above P+ layers and N+ layers2Passivation layer；3 are
Boron doping emitter stage P+；4 is N-type silicon base；5 is phosphorus doping layer N+.
Specific embodiment
Embodiment 1
As shown in figure 1, a kind of passivating method of N-type crystal silicon battery boron emitter stage, comprises the following steps：
（1）It is substrate to use N type monocrystalline silicon silicon chips, and resistivity is 1 ~ 12 Wcm, and thickness is 170 ~ 200 mm, by silicon
Piece is cleaned, and removes the damage layer on surface, and aqueous slkali carries out making herbs into wool treatment to silicon chip；
（2）Above-mentioned silicon chip is spread by high temperature boron and realizes that P+ layers of boron emitter stage is prepared in the doping of silicon chip one side boron；
（3）Surface Pyrex, back side diffusion diffraction layer are removed by wet etching, phosphorus is prepared on P+ layers of boron emitter stage
Diffusion mask layer；
（4）Using tube furnace simultaneously carrying out phosphorus and diffuse to form N+ layer in addition to silicon chip, using chemical etching method removal
The phosphorosilicate glass layer on surface and the diffusion mask layer of P+ layers of boron emitter stage；
（5）（4）In silicon chip be put into oxidation furnace in oxidative deactivation treatment, oxidizing temperature are carried out in high purity oxygen gas atmosphere
It it is 650 DEG C -790 DEG C, preferably 720 DEG C, oxidization time is 5min-60min, preferably 25min, and oxygen flow is 0.3slm-
10slm, preferably 3slm, silicon oxide film is generated on silicon chip two sides simultaneously, and thickness is 2-10nm；
（6）SiN is deposited on the silicon oxide film on silicon chip two sides by the method for PECVDxFilm, depositing temperature is
400-460 DEG C, preferably 450 DEG C, sedimentation time is 8-15min, preferably 12min, SiH during deposition4Flow is 500sccm-
1700sccm, NH3Flow is 4000sccm-8000sccm, and radio-frequency power is 5000W-7000W, and deposition pressure is 1300-
2000mTorr, prepares SiNxFilm thickness is 65-75nm.
Embodiment 2
As shown in figure 1, a kind of passivating method of N-type crystal silicon battery boron emitter stage, comprises the following steps：
（1）It is substrate to use N type monocrystalline silicon silicon chips, and resistivity is 1 ~ 12 Wcm, and thickness is 170 ~ 200 mm, by silicon
Piece is cleaned, and removes the damage layer on surface, and aqueous slkali carries out making herbs into wool treatment to silicon chip；
（2）Above-mentioned silicon chip is spread by high temperature boron and realizes that P+ layers of boron emitter stage is prepared in the doping of silicon chip one side boron；
（3）Surface Pyrex, back side diffusion diffraction layer are removed by wet etching, using the method for injection in silicon chip
Phosphorus doping is simultaneously carried out in addition, N+ layers of phosphorus doping is formed after annealing；
（4）（3）In silicon chip be put into oxidation furnace in oxidative deactivation treatment, oxidizing temperature are carried out in high purity oxygen gas atmosphere
It is 670 DEG C, oxidization time is 45min, oxygen flow is 5slm, silicon oxide film is generated simultaneously on silicon chip two sides, thickness is 2-
10nm；
（5）SiN is deposited on the silicon oxide film on silicon chip two sides by the method for PECVDxFilm, depositing temperature is 440
DEG C, sedimentation time is 10min, SiH during deposition4Flow is 1000sccm, NH3Flow is 6000sccm, and radio-frequency power is 5500W,
Deposition pressure is 1500mTorr, prepares SiNxFilm thickness is 65-75nm.
The method being passivated using non-oxidation is obtained the front back side and all plates silicon nitride structure, is comparative example 1：
（1）It is substrate to use N type monocrystalline silicon, and resistivity is 1 ~ 12 Wcm, and thickness is 170 ~ 200 mm, and silicon chip is entered
Row cleaning, removes the damage layer on surface, and aqueous slkali carries out making herbs into wool treatment to silicon chip；
（2）Above-mentioned silicon chip is spread by high temperature boron and realizes that boron emitter stage P+ is prepared in the doping of silicon chip one side boron；
（3）Surface Pyrex, back side diffusion diffraction layer are removed by wet etching, preparing phosphorus on boron transmitting pole-face expands
Dissipate mask layer；
（4）Using tube furnace simultaneously carrying out phosphorus and diffuse to form N+ layer in addition to silicon chip, using chemical etching method removal
The phosphorosilicate glass layer and boron on surface launch the diffusion mask layer of pole-face；
（5）SiN is deposited on the silicon oxide film on silicon chip two sides by the method for PECVDxFilm, depositing temperature is
400-460 DEG C, preferably 450 DEG C, sedimentation time is 8-15min, preferably 12min, SiH during deposition4Flow is 500sccm-
1700sccm, NH3Flow is 4000sccm-8000sccm, and radio-frequency power is 5000W-7000W, and deposition pressure is 1300-
2000mTorr, prepares SiNxFilm thickness is 65-75nm.
Determine the minority carrier life time and potential open-circuit voltage of silicon chip in above-described embodiment 1 and comparative example 1（implied Voc）,
Result see the table below shown：
From above-mentioned, using the silicon chip of Passivation Treatment of the present invention, its minority carrier life time and potential open-circuit voltage be not than blunt
The silicon chip of change is greatly improved, and technique is relatively easy, and equipment requirement is not high, with crystal silicon battery producing line hardware compatibility, production
Low cost, with positive realistic meaning.
Claims (5)
1. a kind of passivating method of N-type crystal silicon battery boron emitter stage, it is characterised in that passivation step is as follows：
（1）On the two sides of N-type silicon substrate by diffusion or ion implanting twice, phosphorus is formed respectively on the two sides of N-type silicon substrate and is mixed
Miscellaneous N+ layers and P+ layers of boron emitter stage；
（2）Step（1）In N-type silicon substrate be placed in oxidative deactivation treatment carried out in high purity oxygen gas atmosphere, by Low Temperature Thermal oxygen
Change and generate one layer of silicon oxide film respectively on P+ layers of boron emitter stage and phosphorus doping N+ layers；The oxidation temperature of the oxidative deactivation treatment
It is 650 DEG C -790 DEG C to spend, and oxygen flow is 0.3-10slm, and oxidization time is 5min-60min；
（3）SiN is deposited on the silicon oxide film on N-type silicon substrate two sidesxFilm.
2. the passivating method of a kind of N-type crystal silicon battery boron emitter stage according to claim 1, it is characterised in that：Step（1）
In diffusion twice refer to：N-type silicon substrate is spread by high temperature boron and realizes that boron emitter stage is prepared in the doping of N-type silicon substrate one side boron
P+ layers；Pyrex layer, the back side diffusion diffraction layer of boron emitter stage P+ layer surfaces are removed by wet etching, in boron emitter stage P+
Phosphorus diffusion mask layer is prepared on layer, then phosphorus is carried out to the another side of N-type silicon substrate and diffuse to form phosphorus doping N+ layer, using chemistry quarter
The phosphorosilicate glass layer and boron of etching method removal phosphorus doping N+ layer surfaces launch the diffusion mask layer of pole-face；Step（1）In ion
Injection refers to spread N-type silicon substrate by high temperature boron to realize that P+ layers of boron emitter stage is prepared in the doping of N-type silicon substrate one side boron；It is logical
Pyrex layer, the back side diffusion diffraction layer of wet etching removal boron emitter stage P+ layer surfaces are crossed, then to the another of N-type silicon substrate
Face carries out phosphorus injection, activates to form phosphorus doping N+ layers by process annealing.
3. the passivating method of a kind of N-type crystal silicon battery boron emitter stage according to claim 1, it is characterised in that：Step（2）
The thickness of the silicon oxide film of middle generation is 2~10nm.
4. the passivating method of a kind of N-type crystal silicon battery boron emitter stage according to claim 1, it is characterised in that：Step（3）
In deposition deposited using plasma reinforced chemical vapour deposition method, by controlling sedimentary condition, make SiNxIn film
Rich in H.
5. the passivating method of a kind of N-type crystal silicon battery boron emitter stage according to claim 1 or 4, it is characterised in that：Step
（3）In depositing temperature be 400-450 DEG C, sedimentation time is 8-15min, SiH during deposition4Flow is 500sccm-
1700sccm, NH3Flow is 4000sccm-8000sccm, and radio-frequency power is 5000W-7000W, and deposition pressure is 1300-
2000mTorr, prepares SiNxFilm thickness is 65-75nm.
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| CN112018206A (en) * | 2020-09-24 | 2020-12-01 | 山西潞安太阳能科技有限责任公司 | N-type crystalline silicon battery structure and preparation process thereof |
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| CN103515483A (en) * | 2013-09-09 | 2014-01-15 | 中电电气（南京）光伏有限公司 | Method for preparing crystalline silicon solar cell emitter junction |
| CN104538501A (en) * | 2015-01-15 | 2015-04-22 | 中利腾晖光伏科技有限公司 | N-type double-sided battery and manufacturing method thereof |
| CN104733555A (en) * | 2014-12-31 | 2015-06-24 | 江苏顺风光电科技有限公司 | Efficient N-type double-sided solar cell and preparation method thereof |
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| CN103515483A (en) * | 2013-09-09 | 2014-01-15 | 中电电气（南京）光伏有限公司 | Method for preparing crystalline silicon solar cell emitter junction |
| CN104733555A (en) * | 2014-12-31 | 2015-06-24 | 江苏顺风光电科技有限公司 | Efficient N-type double-sided solar cell and preparation method thereof |
| CN104538501A (en) * | 2015-01-15 | 2015-04-22 | 中利腾晖光伏科技有限公司 | N-type double-sided battery and manufacturing method thereof |
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