CN105047766A - Mask diffusion method for preparing double-sided N-type crystal silicon cell - Google Patents
Mask diffusion method for preparing double-sided N-type crystal silicon cell Download PDFInfo
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- CN105047766A CN105047766A CN201510562132.8A CN201510562132A CN105047766A CN 105047766 A CN105047766 A CN 105047766A CN 201510562132 A CN201510562132 A CN 201510562132A CN 105047766 A CN105047766 A CN 105047766A
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- diffusion
- layer
- boron
- pyrex
- sided
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- 239000013078 crystal Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 43
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052796 boron Inorganic materials 0.000 claims abstract description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 7
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 30
- 239000005297 pyrex Substances 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052698 phosphorus Inorganic materials 0.000 claims description 23
- 239000011574 phosphorus Substances 0.000 claims description 23
- 238000007254 oxidation reaction Methods 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 210000002268 wool Anatomy 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910008423 Si—B Inorganic materials 0.000 abstract description 2
- 238000010306 acid treatment Methods 0.000 abstract description 2
- 230000005661 hydrophobic surface Effects 0.000 abstract description 2
- 239000005388 borosilicate glass Substances 0.000 abstract 8
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a mask diffusion method for preparing a double-sided N-type crystal silicon cell. In the process of boron diffusion, a borosilicate glass layer formed on a boron diffusion surface is oxidized first, and then, a silicon nitride layer is deposited on the borosilicate glass layer. The borosilicate glass layer and the silicon nitride layer are used as masks for phosphorous diffusion to prevent mutual doping between two diffusions. A laminated film composed of the oxidized borosilicate glass layer and the dense borosilicate glass layer is used as a diffusion masking layer for subsequent phosphorous diffusion, so that multiple times of etching and mask deposition in the process are reduced. In the preparation process, the borosilicate glass layer formed on the surface of a boron emitter is oxidized after boron diffusion is completed, which can reduce the density of Si-B key at the interface of silicon and the borosilicate glass layer, is advantageous to subsequent borosilicate glass removal through acid treatment and the formation of a hydrophobic surface, and is advantageous to increasing the open-circuit voltage of the cell. By adopting the method of the invention, the process can be simplified greatly, the production efficiency is improved, and the cost of the production process is reduced.
Description
Technical field
The present invention relates to manufacture of solar cells technical field, particularly a kind of mask method of diffusion preparing two-sided N-type crystal silicon battery.
Background technology
Current crystal silicon cell is the main product in solar cell market, and crystal silicon solar batteries can be divided into again P type crystal silicon battery and N-type crystal silicon battery material matrix type.Relative to p type single crystal silicon battery, n type single crystal silicon battery has the features such as little, the resistance to metal impurity con performance of photo attenuation is good, minority carrierdiffusion length is long, has huge potentiality in improved efficiency.
Seeking can compatible crystal silicon battery apparatus for production line at present preferably, and the lower and N-type cell structure that efficiency is higher of preparation cost is vital with preparation technology's flow process for reduction every watt, solar cell cost.Two-sided N-type crystal silicon battery needs to carry out two-sided doping to silicon substrate, mainly uses liquid BBr in current manufacture of solar cells
3source High temperature diffusion realizes P+ doping, uses POCl
3source High temperature diffusion realizes N+ doping.Owing to there being twice diffusion in processing procedure, mutually sheltering thus between boron, phosphorus diffusion process has important meaning for lifting battery efficiency.Different producers adopts different preparation technology's flow processs, and for first boron-doping, after completing one side doping formation P+ boron emitter layer, existing technique mainly adopts the SiO of thermal oxide growth
2film, as the diffusion impervious layer mixing phosphorus face, removes SiO afterwards again
2masking layer, then the process carrying out emitter passivation.This method relates to pyroprocess and step is numerous and diverse, the temperatures as high of thermal oxidation more than 1000 DEG C, and the simultaneous oxidation time should be no less than 30min to form the SiO that thickness is greater than 100nm
2film.This pyroprocess easily causes the diffusion profile of P+ layer to change, and as the reduction of surface dopant concentration, the increase of junction depth, causes the series resistance of battery to increase, and electrical contact performance declines; Pyroprocess easily causes the impurity concentration of silicon substrate to increase simultaneously, and the bluk recombination of battery aggravates thereupon, finally shows as the decline of open circuit voltage and whole efficiency.Patent CN102544236B removes Pyrex layer, then utilizes the method for low-pressure chemical vapor deposition (LPCVD) at silicon chip two sides deposition SiN after being reported in one side B doping formation P+ boron emitter layer
xfilm, then at the SiN of B extended surface
xupper deposition SiO
2, utilize phosphoric acid to remove not by SiO
2the SiN of protection
xface, then carries out phosphorus diffusion on this face, and the method relates to repeatedly plated film and cleaning process, and technics comparing is complicated, is unfavorable for enhancing productivity and reducing production cost.
Summary of the invention
The present invention aims to provide the mask method of diffusion of the two-sided crystal silicon cell of a kind of N-type, realizes mutually sheltering between boron, phosphorus diffusion process with better simply flow process, simplifies two-sided N-type crystal silicon battery preparation technology, reduces costs, be suitable for large-scale industrial production.
For achieving the above object, the technical solution used in the present invention is:
Prepare a mask method of diffusion for two-sided N-type crystal silicon battery, it is characterized in that: in boron diffusion process, first oxidation processes is carried out to the Pyrex layer that boron diffusingsurface is formed, then deposition forms fine and close silicon nitride layer on Pyrex layer; Utilize the mask that Pyrex and silicon nitride layer spread as phosphorus, for preventing the mutual doping between twice diffusion.
The concrete steps of said method are as follows:
(1) original N-type silicon chip is cleaned, remove the damage layer on surface, making herbs into wool;
(2) the veneer ground, silicon chip face after step (1) being processed is placed and is carried out the diffusion of one side boron, forms boron diffusion pole P+ layer, adopts BBr
3liquid source spreads, and diffusion temperature is 900 ~ 970 DEG C, and the time is 30 ~ 60min;
(3) advance in boron diffusion the oxygen that passes into certain flow in the temperature-fall period after terminating to Pyrex and and the interface of silicon chip be oxidized, the flow of oxygen is 1-10slm, and oxidization time is 3-40min, until be cooled to 760 DEG C ~ 840 DEG C;
(4) Pyrex layer after oxidation deposits one deck silicon nitride film by the method for plasma reinforced chemical vapour deposition (PECVD), thickness is 25-70nm, by adjusting the sedimentary condition of silicon nitride film, can control the density of silicon nitride film, refractive index of silicon nitride is on 2.15;
(5) utilize groove type etching equipment the front of silicon chip to be carried out alkali formula making herbs into wool etching, remove the diffraction diffusion layer formed in front in boron diffusion process, form random pyramid face, good front simultaneously;
(6) silicon chip in (5) is carried out the diffusion of one side phosphorus back-to-back, Pyrex layer and silicon nitride stack are as phosphorus diffusion mask;
(7) phosphorus diffusion after, utilize HF acid or HF is sour and H
3pO
4the mixed acid of acid removes Pyrex and silicon nitride layer, forms the P+ layer of boron diffusion and the N+ layer of phosphorus diffusion on silicon chip two sides.
The invention has the beneficial effects as follows:
Battery adopts the diffusion mask layer serving as the diffusion of follow-up phosphorus through the Pyrex layer of oxidation processes and the silicon nitride layer laminate film of densification, decreases the process of multiple etching and mask deposition in processing procedure.In preparation technology to boron diffusion advance after boron emitter surface formed Pyrex layer carry out oxidation processes, the density of the Si-B key at silicon and Pyrex bed boundary place can be reduced, be conducive to follow-up acid treatment and remove Pyrex, form hydrophobic surface, be conducive to the open circuit voltage improving battery.The method can Simplified flowsheet greatly, improves production efficiency, reduces production technology cost, have positive realistic meaning.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, invention is further illustrated
Fig. 1 is process chart of the present invention;
Fig. 2 is that N-type silicon substrate of the present invention completes boron diffusion and the schematic diagram of oxidation processes Pyrex layer;
Fig. 3 is the schematic diagram that N-type silicon substrate of the present invention completes PECVD cvd nitride silicon thin film;
Fig. 4 is the structural representation after the present invention completes twice diffusion removal diffusion mask;
Being labeled as wherein in figure: 1 is N+ layer; 2 is N-type silicon substrate; 3 is P+ layers; 4 is Pyrex layers (BSG) of oxidation processes; 5 is SiN
xlayer.
Embodiment
embodiment 1
As Figure 1-4, a kind of mask method of diffusion preparing two-sided N-type crystal silicon battery, comprises the steps:
(1) adopt n type single crystal silicon to be substrate, resistivity is 1 ~ 12Wcm, and thickness is 170 ~ 200mm, is cleaned by silicon chip, and remove the damage layer on surface, aqueous slkali carries out making herbs into wool process to silicon chip;
(2) the veneer ground, silicon chip face after step (1) being processed is placed and is carried out the diffusion of one side boron, adopts BBr
3liquid source spreads, and diffusion temperature is 970 DEG C, and the time is 45min;
(3) advance in boron diffusion the oxygen that passes into certain flow in the temperature-fall period after terminating to Pyrex and and the interface of silicon be oxidized, the flow of oxygen is 3slm, and oxidization time is 30min, until be cooled to 790 DEG C;
(4) Pyrex layer after oxidation deposits one deck silicon nitride film by the method for plasma reinforced chemical vapour deposition (PECVD), depositing temperature is 430 DEG C-470 DEG C, preferably 460 DEG C, and SiH4 flow is 600-1200sccm, preferred 1000sccm, NH3 flow is 3600-7200sccm, preferred 4000sccm, and radio-frequency power is 5000-6500W, preferred 5600W, sedimentation time 250-750s, thickness is 25-70nm, and refractive index is on 2.15;
(5) utilize groove type etching equipment the front of silicon chip to be carried out alkali formula making herbs into wool etching, remove the diffraction diffusion layer formed in front in boron diffusion process, form random pyramid face, good front simultaneously;
(6) silicon chip in (5) is carried out the diffusion of one side phosphorus back-to-back, Pyrex layer and silicon nitride stack are as phosphorus diffusion mask;
(7) phosphorus diffusion after, utilize HF acid or HF is sour and H
3pO
4the mixed acid of acid removes Pyrex and silicon nitride layer, forms the P+ layer of boron diffusion and the N+ layer of phosphorus diffusion on silicon chip two sides.
embodiment 2
As Figure 1-4, a kind of mask method of diffusion preparing two-sided N-type crystal silicon battery, comprises the steps:
(1) adopt n type single crystal silicon to be substrate, resistivity is 1 ~ 12Wcm, and thickness is 170 ~ 200mm, is cleaned by silicon chip, and remove the damage layer on surface, aqueous slkali carries out making herbs into wool process to silicon chip;
(2) the veneer ground, silicon chip face after step (1) being processed is placed and is carried out the diffusion of one side boron, adopts BBr
3liquid source spreads, and diffusion temperature is 940 DEG C, and the time is 60min;
(3) advance in boron diffusion the oxygen that passes into certain flow in the temperature-fall period after terminating to Pyrex and and the interface of silicon be oxidized, the flow of oxygen is 10slm, and oxidization time is 20min, until be cooled to 840 DEG C;
(4) Pyrex layer after oxidation deposits one deck silicon nitride film by the method for plasma reinforced chemical vapour deposition (PECVD), depositing temperature is 450 DEG C, SiH4 flow is 800sccm, NH3 flow is 6000sccm, radio-frequency power is 6000W, sedimentation time 700s, thickness is 65-70nm, and refractive index is on 2.15;
(5) utilize groove type etching equipment the front of silicon chip to be carried out alkali formula making herbs into wool etching, remove the diffraction diffusion layer formed in front in boron diffusion process, form random pyramid face, good front simultaneously;
(6) silicon chip in (5) is carried out the diffusion of one side phosphorus back-to-back, Pyrex layer and silicon nitride stack are as phosphorus diffusion mask;
Phosphorus diffusion after, utilize HF acid or HF is sour and H
3pO
4the mixed acid of acid removes Pyrex and silicon nitride layer, forms the P+ layer of boron diffusion and the N+ layer of phosphorus diffusion on silicon chip two sides.
Claims (6)
1. prepare a mask method of diffusion for two-sided N-type crystal silicon battery, it is characterized in that: in boron diffusion process, first oxidation processes is carried out to the Pyrex layer that boron diffusingsurface is formed, then deposition forms silicon nitride layer on Pyrex layer; Utilize the mask that Pyrex and silicon nitride layer spread as phosphorus, for preventing the mutual doping between twice diffusion.
2. a kind of mask method of diffusion preparing two-sided N-type crystal silicon battery according to claim 1, is characterized in that comprising following concrete steps:
(1) original N-type silicon chip is cleaned, remove the damage layer on surface, making herbs into wool;
(2) the veneer ground, silicon chip face after step (1) being processed is placed and is carried out the diffusion of one side boron, forms boron diffusion pole P+ layer;
(3) boron diffusion advance in the temperature-fall period after terminating pass into oxygen to Pyrex and and the interface of silicon chip be oxidized, until be cooled to 790-840 DEG C, Pyrex layer thickness is 20-80nm;
(4) Pyrex layer after oxidation deposits one deck silicon nitride film;
(5) utilize groove type etching equipment the front of silicon chip to be carried out alkali formula making herbs into wool etching, remove the diffraction diffusion layer formed in front in boron diffusion process, form random pyramid face, good front simultaneously;
(6) silicon chip in (5) is carried out the diffusion of one side phosphorus back-to-back, Pyrex layer and silicon nitride stack are as phosphorus diffusion mask;
(7) phosphorus diffusion after, utilize HF acid or HF is sour and H
3pO
4the mixed acid of acid removes Pyrex and silicon nitride layer, forms the P+ layer of boron diffusion and the N+ layer of phosphorus diffusion on silicon chip two sides.
3. a kind of mask method of diffusion preparing two-sided N-type crystal silicon battery according to claim 2, is characterized in that: carry out the diffusion of one side boron in step (2) and adopt BBr
3liquid source spreads, and diffusion temperature is 900 ~ 970 DEG C, and the time is 30 ~ 60min.
4. a kind of mask method of diffusion preparing two-sided N-type crystal silicon battery according to claim 2, is characterized in that: the flow of the oxygen passed through in step (3) is 1-10slm, and oxidization time is 3-40min.
5. a kind of mask method of diffusion preparing two-sided N-type crystal silicon battery according to claim 2, is characterized in that: in step (4), deposition adopts plasma reinforced chemical vapour deposition method.
6. a kind of mask method of diffusion preparing two-sided N-type crystal silicon battery according to claim 2, is characterized in that: in step (4), depositing temperature is 430-470 DEG C, SiH
4flow is 600-1200sccm, NH
3flow is 3600-7200sccm, and radio-frequency power is 5000-6500W, sedimentation time 250-750s, and thickness is 25-70nm, and refractive index is on 2.15.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510562132.8A CN105047766A (en) | 2015-09-07 | 2015-09-07 | Mask diffusion method for preparing double-sided N-type crystal silicon cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510562132.8A CN105047766A (en) | 2015-09-07 | 2015-09-07 | Mask diffusion method for preparing double-sided N-type crystal silicon cell |
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| Publication Number | Publication Date |
|---|---|
| CN105047766A true CN105047766A (en) | 2015-11-11 |
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ID=54454152
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|---|---|---|---|
| CN201510562132.8A Pending CN105047766A (en) | 2015-09-07 | 2015-09-07 | Mask diffusion method for preparing double-sided N-type crystal silicon cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129173A (en) * | 2016-06-28 | 2016-11-16 | 浙江晶科能源有限公司 | A kind of manufacture method of N-type double-side cell |
| CN109906515A (en) * | 2016-10-25 | 2019-06-18 | 信越化学工业株式会社 | The manufacturing method of high photoelectricity conversion efficiency solar battery and high photoelectricity conversion efficiency solar battery |
| CN110299432A (en) * | 2019-07-02 | 2019-10-01 | 浙江晶科能源有限公司 | A kind of preparation method of N-shaped double-side cell |
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| CN103887347A (en) * | 2014-03-13 | 2014-06-25 | 中国东方电气集团有限公司 | Double-face P-type crystalline silicon battery structure and manufacturing method thereof |
| CN102623563B (en) * | 2012-03-30 | 2014-09-03 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method for double-face illuminated crystalline silicon solar cell |
| CN104538501A (en) * | 2015-01-15 | 2015-04-22 | 中利腾晖光伏科技有限公司 | N-type double-sided battery and manufacturing method thereof |
| CN104733555A (en) * | 2014-12-31 | 2015-06-24 | 江苏顺风光电科技有限公司 | Efficient N-type double-sided solar cell and preparation method thereof |
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2015
- 2015-09-07 CN CN201510562132.8A patent/CN105047766A/en active Pending
Patent Citations (4)
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| CN102623563B (en) * | 2012-03-30 | 2014-09-03 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method for double-face illuminated crystalline silicon solar cell |
| CN103887347A (en) * | 2014-03-13 | 2014-06-25 | 中国东方电气集团有限公司 | Double-face P-type crystalline silicon battery structure and manufacturing method thereof |
| CN104733555A (en) * | 2014-12-31 | 2015-06-24 | 江苏顺风光电科技有限公司 | Efficient N-type double-sided solar cell and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129173A (en) * | 2016-06-28 | 2016-11-16 | 浙江晶科能源有限公司 | A kind of manufacture method of N-type double-side cell |
| CN109906515A (en) * | 2016-10-25 | 2019-06-18 | 信越化学工业株式会社 | The manufacturing method of high photoelectricity conversion efficiency solar battery and high photoelectricity conversion efficiency solar battery |
| CN110299432A (en) * | 2019-07-02 | 2019-10-01 | 浙江晶科能源有限公司 | A kind of preparation method of N-shaped double-side cell |
| CN110299432B (en) * | 2019-07-02 | 2021-04-23 | 浙江晶科能源有限公司 | Preparation method of n-type double-sided battery |
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Application publication date: 20151111 |