JPS5426675A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5426675A
JPS5426675A JP9193077A JP9193077A JPS5426675A JP S5426675 A JPS5426675 A JP S5426675A JP 9193077 A JP9193077 A JP 9193077A JP 9193077 A JP9193077 A JP 9193077A JP S5426675 A JPS5426675 A JP S5426675A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
substrate
coating
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9193077A
Other languages
Japanese (ja)
Inventor
Manabu Yoshida
Jun Fukuchi
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9193077A priority Critical patent/JPS5426675A/en
Priority to AU38236/78A priority patent/AU509758B2/en
Priority to DE19782833214 priority patent/DE2833214C2/en
Publication of JPS5426675A publication Critical patent/JPS5426675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To simplify the electrode formation, by coating metal at the substrate in advance, coating conductive paste at the substrate the same as for the diffusion layer, and by constituting ohmic electrode through sintering the both front and rear sides.
JP9193077A 1977-07-29 1977-07-29 Manufacture for semiconductor device Pending JPS5426675A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9193077A JPS5426675A (en) 1977-07-29 1977-07-29 Manufacture for semiconductor device
AU38236/78A AU509758B2 (en) 1977-07-29 1978-07-21 Ohmic electrode to semiconductor device
DE19782833214 DE2833214C2 (en) 1977-07-29 1978-07-28 Process for producing an electrode intended for a solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9193077A JPS5426675A (en) 1977-07-29 1977-07-29 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5426675A true JPS5426675A (en) 1979-02-28

Family

ID=14040293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9193077A Pending JPS5426675A (en) 1977-07-29 1977-07-29 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5426675A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143865A (en) * 1988-09-02 1992-09-01 Kabushiki Kaisha Toshiba Metal bump type semiconductor device and method for manufacturing the same
JP2016514901A (en) * 2013-03-15 2016-05-23 サンパワー コーポレイション Improving the conductivity of solar cells

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143865A (en) * 1988-09-02 1992-09-01 Kabushiki Kaisha Toshiba Metal bump type semiconductor device and method for manufacturing the same
JP2016514901A (en) * 2013-03-15 2016-05-23 サンパワー コーポレイション Improving the conductivity of solar cells
US10074753B2 (en) 2013-03-15 2018-09-11 Sunpower Corporation Conductivity enhancement of solar cells

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