JPS56100464A - Programmable cell used for programmable electronically operating row element - Google Patents

Programmable cell used for programmable electronically operating row element

Info

Publication number
JPS56100464A
JPS56100464A JP17519980A JP17519980A JPS56100464A JP S56100464 A JPS56100464 A JP S56100464A JP 17519980 A JP17519980 A JP 17519980A JP 17519980 A JP17519980 A JP 17519980A JP S56100464 A JPS56100464 A JP S56100464A
Authority
JP
Japan
Prior art keywords
programmable
cell used
row element
electronically operating
operating row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17519980A
Other languages
Japanese (ja)
Inventor
Etsuchi Horumubaagu Sukotsuto
Ei Furasuku Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of JPS56100464A publication Critical patent/JPS56100464A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
JP17519980A 1979-12-13 1980-12-11 Programmable cell used for programmable electronically operating row element Pending JPS56100464A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US20827480A 1980-11-19 1980-11-19

Publications (1)

Publication Number Publication Date
JPS56100464A true JPS56100464A (en) 1981-08-12

Family

ID=26799984

Family Applications (3)

Application Number Title Priority Date Filing Date
JP17519980A Pending JPS56100464A (en) 1979-12-13 1980-12-11 Programmable cell used for programmable electronically operating row element
JP17520080A Pending JPS56115571A (en) 1979-12-13 1980-12-11 Thin film transistor
JP17568280A Pending JPS56103474A (en) 1979-12-13 1980-12-12 Diode for rom or eeprom

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP17520080A Pending JPS56115571A (en) 1979-12-13 1980-12-11 Thin film transistor
JP17568280A Pending JPS56103474A (en) 1979-12-13 1980-12-12 Diode for rom or eeprom

Country Status (15)

Country Link
JP (3) JPS56100464A (en)
KR (2) KR830004681A (en)
AU (1) AU543740B2 (en)
BE (1) BE886631A (en)
CA (3) CA1155239A (en)
DE (1) DE3046701A1 (en)
FR (1) FR2475295A1 (en)
GB (1) GB2066566B (en)
IL (1) IL61671A (en)
IT (1) IT1194001B (en)
MX (1) MX150800A (en)
NL (1) NL8006771A (en)
SE (1) SE8008739L (en)
SG (1) SG72784G (en)
ZA (3) ZA807762B (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168665A (en) * 1983-03-07 1984-09-22 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Semiconductor memory device and method of producing same
JPS59501988A (en) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− Safety valve device and method
JP2004281497A (en) * 2003-03-13 2004-10-07 Sharp Corp Resistance change function body, memory, its manufacturing method, semiconductor device, and electronic apparatus
JP2004349504A (en) * 2003-05-22 2004-12-09 Hitachi Ltd Semiconductor integrated circuit device
JP2004363586A (en) * 2003-06-04 2004-12-24 Samsung Electronics Co Ltd Phase transition memory device
JPWO2004027877A1 (en) * 2002-09-19 2006-01-19 シャープ株式会社 Resistance change functional body and manufacturing method thereof
JP2007019559A (en) * 2006-10-23 2007-01-25 Hitachi Ltd Semiconductor storage device and its manufacturing method
US7341892B2 (en) 2002-02-01 2008-03-11 Hitachi, Ltd. Semiconductor memory cell and method of forming same
JP2008118108A (en) * 2006-08-25 2008-05-22 Qimonda Ag Information storage element and method of manufacturing the same
JP2008124452A (en) * 2006-10-27 2008-05-29 Qimonda Ag Modifiable gate stack memory element

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890790A (en) * 1981-08-07 1983-05-30 ザ　ブリテイッシュ　ペトロレアム　カンパニ−　ピ−．エル．シ− Semiconductor device
JPS5867066A (en) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd Insulating gate type field-effect semiconductor device
AU562641B2 (en) * 1983-01-18 1987-06-18 Energy Conversion Devices Inc. Electronic matrix array
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US4545111A (en) * 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
US4569121A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
JPS60153552U (en) * 1984-03-24 1985-10-12 沖電気工業株式会社 PN junction semiconductor device
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
GB9113795D0 (en) * 1991-06-26 1991-08-14 Philips Electronic Associated Thin-film rom devices and their manufacture
GB9117680D0 (en) * 1991-08-16 1991-10-02 Philips Electronic Associated Electronic matrix array devices
JP3501416B2 (en) * 1994-04-28 2004-03-02 忠弘 大見 Semiconductor device
JP2500484B2 (en) * 1994-07-11 1996-05-29 ソニー株式会社 Thin film transistor manufacturing method
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
US6599796B2 (en) * 2001-06-29 2003-07-29 Hewlett-Packard Development Company, L.P. Apparatus and fabrication process to reduce crosstalk in pirm memory array
JP4767653B2 (en) * 2004-10-22 2011-09-07 株式会社半導体エネルギー研究所 Semiconductor device and wireless chip
US7781758B2 (en) 2004-10-22 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9142763B2 (en) 2007-06-20 2015-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Electronic component, and a method of manufacturing an electronic component
US9716225B2 (en) 2014-09-03 2017-07-25 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122382A (en) * 1975-04-18 1976-10-26 Fujitsu Ltd Semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5819138B2 (en) * 1977-01-11 1983-04-16 日本電信電話株式会社 semiconductor equipment
JPS53144274A (en) * 1977-05-23 1978-12-15 Hitachi Ltd Semiconductor device and its manufacture
JPS5457879A (en) * 1977-10-15 1979-05-10 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
US4177475A (en) * 1977-10-31 1979-12-04 Burroughs Corporation High temperature amorphous memory device for an electrically alterable read-only memory
DE2909197A1 (en) * 1978-03-20 1979-10-04 Texas Instruments Inc PROCESS FOR PRODUCING A FIXED MEMORY AND FIXED STORAGE MATRIX

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59501988A (en) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− Safety valve device and method
JPS59168665A (en) * 1983-03-07 1984-09-22 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Semiconductor memory device and method of producing same
US7341892B2 (en) 2002-02-01 2008-03-11 Hitachi, Ltd. Semiconductor memory cell and method of forming same
JPWO2004027877A1 (en) * 2002-09-19 2006-01-19 シャープ株式会社 Resistance change functional body and manufacturing method thereof
JP4808966B2 (en) * 2002-09-19 2011-11-02 シャープ株式会社 Resistance change function body and memory and electronic device including the same
JP2004281497A (en) * 2003-03-13 2004-10-07 Sharp Corp Resistance change function body, memory, its manufacturing method, semiconductor device, and electronic apparatus
JP4541651B2 (en) * 2003-03-13 2010-09-08 シャープ株式会社 Resistance change function body, memory, manufacturing method thereof, semiconductor device, and electronic apparatus
JP4634014B2 (en) * 2003-05-22 2011-02-16 株式会社日立製作所 Semiconductor memory device
JP2004349504A (en) * 2003-05-22 2004-12-09 Hitachi Ltd Semiconductor integrated circuit device
JP2004363586A (en) * 2003-06-04 2004-12-24 Samsung Electronics Co Ltd Phase transition memory device
JP4554991B2 (en) * 2003-06-04 2010-09-29 三星電子株式会社 Phase conversion memory device
JP2008118108A (en) * 2006-08-25 2008-05-22 Qimonda Ag Information storage element and method of manufacturing the same
JP2007019559A (en) * 2006-10-23 2007-01-25 Hitachi Ltd Semiconductor storage device and its manufacturing method
JP2008124452A (en) * 2006-10-27 2008-05-29 Qimonda Ag Modifiable gate stack memory element

Also Published As

Publication number Publication date
FR2475295A1 (en) 1981-08-07
BE886631A (en) 1981-04-01
JPS56115571A (en) 1981-09-10
CA1162327A (en) 1984-02-14
IL61671A0 (en) 1981-01-30
MX150800A (en) 1984-07-19
KR830004681A (en) 1983-07-16
ZA807762B (en) 1981-12-30
DE3046701A1 (en) 1981-10-15
ZA807761B (en) 1981-12-30
AU543740B2 (en) 1985-05-02
NL8006771A (en) 1981-07-16
CA1155239A (en) 1983-10-11
GB2066566B (en) 1984-07-04
JPS56103474A (en) 1981-08-18
ZA807763B (en) 1981-12-30
SG72784G (en) 1985-03-29
SE8008739L (en) 1981-06-14
IT1194001B (en) 1988-08-31
AU6531580A (en) 1981-06-18
GB2066566A (en) 1981-07-08
IL61671A (en) 1984-04-30
CA1161970A (en) 1984-02-07
KR850001045B1 (en) 1985-07-19
IT8026643A0 (en) 1980-12-12
KR830004679A (en) 1983-07-16

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