GB2034974B - Field-effect semiconductor devices - Google Patents
Field-effect semiconductor devicesInfo
- Publication number
- GB2034974B GB2034974B GB7938635A GB7938635A GB2034974B GB 2034974 B GB2034974 B GB 2034974B GB 7938635 A GB7938635 A GB 7938635A GB 7938635 A GB7938635 A GB 7938635A GB 2034974 B GB2034974 B GB 2034974B
- Authority
- GB
- United Kingdom
- Prior art keywords
- field
- semiconductor devices
- effect semiconductor
- effect
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8236—Combination of enhancement and depletion transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7938635A GB2034974B (en) | 1978-11-16 | 1979-11-07 | Field-effect semiconductor devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7844752 | 1978-11-16 | ||
GB7938635A GB2034974B (en) | 1978-11-16 | 1979-11-07 | Field-effect semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2034974A GB2034974A (en) | 1980-06-11 |
GB2034974B true GB2034974B (en) | 1983-04-13 |
Family
ID=26269601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7938635A Expired GB2034974B (en) | 1978-11-16 | 1979-11-07 | Field-effect semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2034974B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940006668B1 (en) * | 1984-11-22 | 1994-07-25 | 가부시끼가이샤 히다찌세이사꾸쇼 | Manufacturing method of semiconductor ic device |
KR900008746B1 (en) * | 1986-11-19 | 1990-11-29 | 삼성전자 주식회사 | Semiconductor device protecting a connection |
-
1979
- 1979-11-07 GB GB7938635A patent/GB2034974B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2034974A (en) | 1980-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |