DE69033960D1 - Halbleiterbauelement mit MIS-Kondensator - Google Patents
Halbleiterbauelement mit MIS-KondensatorInfo
- Publication number
- DE69033960D1 DE69033960D1 DE69033960T DE69033960T DE69033960D1 DE 69033960 D1 DE69033960 D1 DE 69033960D1 DE 69033960 T DE69033960 T DE 69033960T DE 69033960 T DE69033960 T DE 69033960T DE 69033960 D1 DE69033960 D1 DE 69033960D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- mis capacitor
- mis
- capacitor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1047221A JP2786652B2 (ja) | 1989-02-28 | 1989-02-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69033960D1 true DE69033960D1 (de) | 2002-06-13 |
DE69033960T2 DE69033960T2 (de) | 2002-11-07 |
Family
ID=12769129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69033960T Expired - Fee Related DE69033960T2 (de) | 1989-02-28 | 1990-02-28 | Halbleiterbauelement mit MIS-Kondensator |
Country Status (5)
Country | Link |
---|---|
US (1) | US5089875A (de) |
EP (1) | EP0385450B1 (de) |
JP (1) | JP2786652B2 (de) |
KR (1) | KR930006143B1 (de) |
DE (1) | DE69033960T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5706163A (en) * | 1995-11-28 | 1998-01-06 | California Micro Devices Corporation | ESD-protected thin film capacitor structures |
KR970053932A (ko) * | 1995-12-08 | 1997-07-31 | 김광호 | 트랜지스터의 래치 전압을 이용한 정전 내력 향상 모스 축전기 |
US5892262A (en) * | 1996-06-03 | 1999-04-06 | Winbond Electronics Corp. | Capacitor-triggered electrostatic discharge protection circuit |
US6417556B1 (en) * | 2000-02-02 | 2002-07-09 | Advanced Micro Devices, Inc. | High K dielectric de-coupling capacitor embedded in backend interconnect |
US6838367B1 (en) | 2000-08-24 | 2005-01-04 | Micron Technology, Inc. | Method for simultaneous formation of fuse and capacitor plate and resulting structure |
JP3873679B2 (ja) * | 2001-07-23 | 2007-01-24 | セイコーエプソン株式会社 | 半導体容量装置、昇圧回路および不揮発性半導体記憶装置 |
JP2006100308A (ja) * | 2004-09-28 | 2006-04-13 | Sanyo Electric Co Ltd | 半導体装置、全波整流回路、半波整流回路 |
JP4986404B2 (ja) * | 2005-03-17 | 2012-07-25 | 三菱電機株式会社 | 半導体装置 |
US7420793B2 (en) * | 2006-01-12 | 2008-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Circuit system for protecting thin dielectric devices from ESD induced damages |
JP2009245503A (ja) * | 2008-03-31 | 2009-10-22 | Nec Electronics Corp | 半導体記憶装置 |
JP5704291B1 (ja) * | 2013-08-19 | 2015-04-22 | 株式会社村田製作所 | Esd保護機能付薄膜キャパシタ装置およびその製造方法 |
DE102014008990B4 (de) | 2014-06-13 | 2016-11-10 | Dietmar Dreyer | Halbleiterverstärker zur Speicherung von elektrischer Energie auf der Basis eines generierten Schwingkreises |
US11351048B2 (en) | 2015-11-16 | 2022-06-07 | Boston Scientific Scimed, Inc. | Stent delivery systems with a reinforced deployment sheath |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3469155A (en) * | 1966-09-23 | 1969-09-23 | Westinghouse Electric Corp | Punch-through means integrated with mos type devices for protection against insulation layer breakdown |
JPS5821374A (ja) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | 半導体装置 |
JPS5825264A (ja) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
JPS60144972A (ja) * | 1984-01-06 | 1985-07-31 | Toshiba Corp | 半導体装置 |
JPS60229359A (ja) * | 1984-04-27 | 1985-11-14 | Matsushita Electric Ind Co Ltd | 高周波半導体装置 |
US4651178A (en) * | 1985-05-31 | 1987-03-17 | Rca Corporation | Dual inverse zener diode with buried junctions |
JPS6218938U (de) * | 1985-07-18 | 1987-02-04 | ||
JPS62154661A (ja) * | 1985-12-26 | 1987-07-09 | Toshiba Corp | 半導体装置 |
US4758873A (en) * | 1986-05-16 | 1988-07-19 | National Semiconductor Corporation | Balanced MOS capacitor with low stray capacitance and high ESD survival |
-
1989
- 1989-02-28 JP JP1047221A patent/JP2786652B2/ja not_active Expired - Fee Related
-
1990
- 1990-02-28 KR KR1019900002683A patent/KR930006143B1/ko not_active IP Right Cessation
- 1990-02-28 DE DE69033960T patent/DE69033960T2/de not_active Expired - Fee Related
- 1990-02-28 EP EP90103926A patent/EP0385450B1/de not_active Expired - Lifetime
-
1991
- 1991-04-23 US US07/689,668 patent/US5089875A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0385450A2 (de) | 1990-09-05 |
US5089875A (en) | 1992-02-18 |
KR930006143B1 (ko) | 1993-07-07 |
JPH02226757A (ja) | 1990-09-10 |
DE69033960T2 (de) | 2002-11-07 |
EP0385450B1 (de) | 2002-05-08 |
EP0385450A3 (de) | 1991-07-17 |
KR900013654A (ko) | 1990-09-06 |
JP2786652B2 (ja) | 1998-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |