DE69027065D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69027065D1
DE69027065D1 DE69027065T DE69027065T DE69027065D1 DE 69027065 D1 DE69027065 D1 DE 69027065D1 DE 69027065 T DE69027065 T DE 69027065T DE 69027065 T DE69027065 T DE 69027065T DE 69027065 D1 DE69027065 D1 DE 69027065D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69027065T
Other languages
English (en)
Other versions
DE69027065T2 (de
Inventor
Takao Akaogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69027065D1 publication Critical patent/DE69027065D1/de
Publication of DE69027065T2 publication Critical patent/DE69027065T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE69027065T 1989-07-13 1990-07-12 Halbleiterspeicheranordnung Expired - Lifetime DE69027065T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1183081A JPH0346197A (ja) 1989-07-13 1989-07-13 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69027065D1 true DE69027065D1 (de) 1996-06-27
DE69027065T2 DE69027065T2 (de) 1996-11-28

Family

ID=16129430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027065T Expired - Lifetime DE69027065T2 (de) 1989-07-13 1990-07-12 Halbleiterspeicheranordnung

Country Status (5)

Country Link
US (1) US5091888A (de)
EP (1) EP0408037B1 (de)
JP (1) JPH0346197A (de)
KR (1) KR930009541B1 (de)
DE (1) DE69027065T2 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185722A (en) * 1989-11-22 1993-02-09 Sharp Kabushiki Kaisha Semiconductor memory device having a memory test circuit
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
FR2665792B1 (fr) * 1990-08-08 1993-06-11 Sgs Thomson Microelectronics Memoire integree pourvue de moyens de test ameliores.
DE69026946T2 (de) * 1990-11-19 1996-09-05 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen wie nichtflüchtige Speicher mit kompensiertem Offsetstrom
EP0491105B1 (de) * 1990-12-13 1996-05-01 STMicroelectronics S.r.l. Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung
KR940004406B1 (ko) * 1991-09-27 1994-05-25 현대전자산업 주식회사 Nand형 셀의 감지증폭기
US5245574A (en) * 1991-12-23 1993-09-14 Intel Corporation Apparatus for increasing the speed of operation of non-volatile memory arrays
JP2894115B2 (ja) * 1992-11-10 1999-05-24 松下電器産業株式会社 カラム選択回路
DE4302195C2 (de) * 1993-01-27 1996-12-19 Telefunken Microelectron Verfahren zum Betrieb eines nichtflüchtigen Halbleiterspeichers
JP3543006B2 (ja) * 1993-05-28 2004-07-14 マクロニクス インターナショナル カンパニイ リミテッド 不揮発性メモリの消去及びプログラミング検証回路
US5463586A (en) * 1993-05-28 1995-10-31 Macronix International Co., Ltd. Erase and program verification circuit for non-volatile memory
US5414664A (en) * 1993-05-28 1995-05-09 Macronix International Co., Ltd. Flash EPROM with block erase flags for over-erase protection
US5359558A (en) * 1993-08-23 1994-10-25 Advanced Micro Devices, Inc. Flash eeprom array with improved high endurance
US5828601A (en) * 1993-12-01 1998-10-27 Advanced Micro Devices, Inc. Programmed reference
KR0154193B1 (ko) * 1994-12-30 1998-12-01 김주용 센스 앰프회로
FR2755286B1 (fr) * 1996-10-25 1999-01-22 Sgs Thomson Microelectronics Memoire a temps de lecture ameliore
US5818764A (en) * 1997-02-06 1998-10-06 Macronix International Co., Ltd. Block-level wordline enablement to reduce negative wordline stress
FR2762434B1 (fr) * 1997-04-16 1999-05-28 Sgs Thomson Microelectronics Circuit de lecture de memoire avec dispositif de limitation de precharge
DE19720555A1 (de) * 1997-05-16 1998-11-19 Abb Research Ltd Statorwicklungsisolierung
IT1293644B1 (it) * 1997-07-25 1999-03-08 Sgs Thomson Microelectronics Circuito e metodo di lettura di celle di una matrice di memoria analogica, in particolare di tipo flash
US6128603A (en) * 1997-09-09 2000-10-03 Dent; Warren T. Consumer-based system and method for managing and paying electronic billing statements
US6021083A (en) * 1997-12-05 2000-02-01 Macronix International Co., Ltd. Block decoded wordline driver with positive and negative voltage modes
KR100268875B1 (ko) * 1998-05-13 2000-10-16 김영환 비휘발성 강유전체 메모리소자의 구동회로
JP3366264B2 (ja) * 1998-09-28 2003-01-14 エヌイーシーマイクロシステム株式会社 不揮発性メモリ、メモリ検査方法
US6232801B1 (en) * 1999-08-04 2001-05-15 Vlsi Technology, Inc. Comparators and comparison methods
IT1308857B1 (it) * 1999-10-29 2002-01-11 St Microelectronics Srl Metodo e circuito di lettura per una memoria non volatile.
JP3651767B2 (ja) * 2000-04-24 2005-05-25 シャープ株式会社 半導体記憶装置
JP4443759B2 (ja) * 2000-11-22 2010-03-31 富士通マイクロエレクトロニクス株式会社 電圧・電流特性調整方法
TW559814B (en) * 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
JP2003077282A (ja) * 2001-08-31 2003-03-14 Fujitsu Ltd 不揮発性半導体記憶装置
US6501697B1 (en) * 2001-10-11 2002-12-31 Hewlett-Packard Company High density memory sense amplifier
TWI237387B (en) * 2001-11-05 2005-08-01 Macronix Int Co Ltd Method to stabilize the reference bits of the multi-bit memory cell
US7123537B2 (en) * 2002-03-15 2006-10-17 Macronix International Co., Ltd. Decoder arrangement of a memory cell array
JP3968274B2 (ja) * 2002-07-08 2007-08-29 富士通株式会社 半導体記憶装置
US6876249B2 (en) * 2002-08-13 2005-04-05 Semiconductor Components Industries, Llc Circuit and method for a programmable reference voltage
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
US7361561B2 (en) 2005-06-24 2008-04-22 Freescale Semiconductor, Inc. Method of making a metal gate semiconductor device
JP4951786B2 (ja) * 2007-05-10 2012-06-13 ルネサスエレクトロニクス株式会社 半導体記憶装置
US20190311749A1 (en) * 2018-04-09 2019-10-10 Anaflash Inc. Logic Compatible Embedded Flash Memory
JP7458960B2 (ja) 2020-11-10 2024-04-01 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342102A (en) * 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
JPS5856290A (ja) * 1981-09-29 1983-04-02 Nec Corp 記憶装置
US4648074A (en) * 1984-06-29 1987-03-03 Rca Corporation Reference circuit with semiconductor memory array
IT1221018B (it) * 1985-03-28 1990-06-21 Giulio Casagrande Dispositivo per verificare celle di memoria in funzione del salto di soglia ottenibile in fase di scrittura
IT1213343B (it) * 1986-09-12 1989-12-20 Sgs Microelettronica Spa Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.
JP2507529B2 (ja) * 1988-03-31 1996-06-12 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
EP0408037A3 (en) 1993-10-06
EP0408037B1 (de) 1996-05-22
KR910003667A (ko) 1991-02-28
EP0408037A2 (de) 1991-01-16
DE69027065T2 (de) 1996-11-28
JPH0346197A (ja) 1991-02-27
US5091888A (en) 1992-02-25
KR930009541B1 (en) 1993-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP