DE69028048D1 - Halbleiter-Speicher-Einrichtung - Google Patents

Halbleiter-Speicher-Einrichtung

Info

Publication number
DE69028048D1
DE69028048D1 DE69028048T DE69028048T DE69028048D1 DE 69028048 D1 DE69028048 D1 DE 69028048D1 DE 69028048 T DE69028048 T DE 69028048T DE 69028048 T DE69028048 T DE 69028048T DE 69028048 D1 DE69028048 D1 DE 69028048D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028048T
Other languages
English (en)
Other versions
DE69028048T2 (de
Inventor
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE69028048D1 publication Critical patent/DE69028048D1/de
Application granted granted Critical
Publication of DE69028048T2 publication Critical patent/DE69028048T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
DE69028048T 1989-06-12 1990-06-12 Halbleiter-Speicher-Einrichtung Expired - Fee Related DE69028048T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14867689A JPH0824000B2 (ja) 1989-06-12 1989-06-12 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69028048D1 true DE69028048D1 (de) 1996-09-19
DE69028048T2 DE69028048T2 (de) 1997-01-23

Family

ID=15458122

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028048T Expired - Fee Related DE69028048T2 (de) 1989-06-12 1990-06-12 Halbleiter-Speicher-Einrichtung

Country Status (4)

Country Link
EP (1) EP0405220B1 (de)
JP (1) JPH0824000B2 (de)
KR (1) KR930008412B1 (de)
DE (1) DE69028048T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723695B2 (ja) * 1991-07-02 1998-03-09 シャープ株式会社 半導体記憶装置
KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
JP3620992B2 (ja) * 1999-04-23 2005-02-16 株式会社 沖マイクロデザイン 半導体記憶装置
CN1860147B (zh) 2003-09-29 2010-06-16 东曹株式会社 用于生产硬质聚氨酯泡沫和异氰尿酸酯改性硬质聚氨酯泡沫的催化剂组合物、及使用其的原料共混组合物
KR102389472B1 (ko) * 2020-11-12 2022-04-25 주식회사 지아이텍 질화티타늄 코팅층이 형성된 슬롯다이 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342102A (en) * 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
JPS6276098A (ja) * 1985-09-30 1987-04-08 Toshiba Corp センスアンプ回路
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
IT1213343B (it) * 1986-09-12 1989-12-20 Sgs Microelettronica Spa Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.
US4967394A (en) * 1987-09-09 1990-10-30 Kabushiki Kaisha Toshiba Semiconductor memory device having a test cell array

Also Published As

Publication number Publication date
EP0405220A3 (de) 1994-02-23
KR910001772A (ko) 1991-01-31
KR930008412B1 (ko) 1993-08-31
EP0405220B1 (de) 1996-08-14
JPH0312897A (ja) 1991-01-21
JPH0824000B2 (ja) 1996-03-06
EP0405220A2 (de) 1991-01-02
DE69028048T2 (de) 1997-01-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee