KR920003480A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR920003480A
KR920003480A KR1019910011600A KR910011600A KR920003480A KR 920003480 A KR920003480 A KR 920003480A KR 1019910011600 A KR1019910011600 A KR 1019910011600A KR 910011600 A KR910011600 A KR 910011600A KR 920003480 A KR920003480 A KR 920003480A
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South Korea
Prior art keywords
lead
semiconductor chip
semiconductor device
main surface
semiconductor
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KR1019910011600A
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English (en)
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KR100202760B1 (ko
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에이지 오이
히로미찌 스즈끼
겐 무라까미
Original Assignee
미다 가쓰시게
가부시끼가이샤 히다치세이사꾸쇼
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Publication of KR920003480A publication Critical patent/KR920003480A/ko
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Publication of KR100202760B1 publication Critical patent/KR100202760B1/ko

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Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 실시예1의 수지봉지형 반도체장치의 몰드수지의 상부 절반을 제거한 전체구성을 도시한 평면도,
제 2도는 제1도의 I-I'선을 절단한 단면도.

Claims (25)

  1. 4각형상의 주면을 갖고, 그 주면에 여러개의 소자오 그 4각형상의 주면 주변부에 배열되어 있는 제1 및 제2의 본딩패드를 갖는 반도체칩, 각각이 제1 및 제2의 끝부를 갖고, 상기 제1의 끝부는 상기 반도체칩의 바깥쪽에 위치하는 여러개의 제1의 리이드, 상기 반도체칩의 주면상에 연장하고, 상기 반도체칩의 바깥쪽으로 연장하는 제2의 리이드, 상기 제1의 본딩패드와 상기 제1의 리이드의 제1의 끝부를 전기적으로 접속하는 제1의 접속수단고 상기 제2의 본딩패드와 상기 제2의 리이드를 접속하는 제2의 접속수단 및 상기 반도체칩, 상기 제1의 리이드 및 제2의 리이드의 일부분, 그리고 상기 제1 및 제2의 접속수단을 덮는 봉지체를 포함하는 반도체 장치.
  2. 특허청구의 범위 제1항에 있어서, 상기 제2의 리이드는 상기 제1 및 제2의 본딩패드보다 상기 반도체칩의 안쪽에 위치하는 반도체 장치.
  3. 특허청구의 범위 제2항에 있어서, 상기 제2의 리이드는 절연막을 거쳐서 상기 반도체칩의 주면에 접착되어 있는 반도체장치.
  4. 특허청구의 범위 제3항에 있어서, 상기 봉지체는 4각형상의 평면을 갖는반도체 장치.
  5. 특허청구의 범위 제4항에 있어서, 상기 제1의 리이드는 상기 봉지체의 4변에서 돌출한 반도체 장치.
  6. 특허청구의 범위 제5항에 있어서, 상기 제1 및 제2의 본딩패드는 상기 4각형상의 반도체 칩의 4변에 따라서 배열되어 있는 반도체 장치.
  7. 특허청구의 범위 제5항에 있어서, 상기 제1본딩패드에는 입출력 버피가 근접해서 배치되어 있는 반도체 장치.
  8. 특허청구의 범위 제6항에 있어서, 상기 제2의 리이드는 상기 반도체칩의 코너부에서 상기 반도체칩의 바깥쪽으로 연장하고 있는 반도체 장치.
  9. 특허청구의 범위 제3항에 있어서, 상기 제2의 리이드에 기준전위가 인가되는 반도체 장치.
  10. 4각형상의 주면을 갖고, 그 주면에 여러개의 소자와 그 4각형상의 주면 주변부에 배열되어 있는 제1 및 제2의 본딩패드를 갖는 반도체칩, 상기 반도체칩을 덮는 봉지체, 각각이 상기 반도체칩 근방에 위치하는 제1의 끝부와 상기 봉지체의 바깥쪽에 위치하는 제2의 끝부를 갖는 여러개의 제1의 리이드, 상기 반도체칩의 주면상에 연장하고, 상기 반도체칩의 바깥쪽으로 연장하며, 또한 상기 봉지체의 바깥쪽으로 돌출하는 제2의 리이드 및 상기 봉지체 내부에 위치하여 상기 제1의 본딩패드와 상기 제1의 리이드의 제1의 끝부를 전기적으로 접속하는 제1의 접속수단과 상기 봉지체 내부에 위치하여 상기 제2의 본딩패드와 상기 제2의 리이드를 접속하는 제2의 접속수단을 포함하는 반도체 장치.
  11. 특허청구의 범위 제10항에 있어서, 상기 제2의 리이드는 상기 제1및 제2의 본딩패드 보다 상기 반도체칩안쪽에 위치하는 반도체 장치.
  12. 특허청구의 범위 제11항에 있어서, 상기 제2의 리이드는 절연막을 거쳐서 상기 반도체칩 주면에 접착되어 있는 반도체 장치.
  13. 특허청구의 범위 제12항에 있어서, 상기 봉지체는 4각형상의 평면을 갖는 반도체 장치.
  14. 특허청구의 범위 제13항에 있어서, 상기 제1의 리이드는 상기 봉지체의 4변에서 돌출하는 반도체 장치.
  15. 특허청구의 범위 제14항에 있어서, 상기 제1 및 제2의 본딩패드는 상기 4각형상의 반도체칩의 4변에 따라서 배열되어 있는 반도체 장치.
  16. 특허청구의 범위 제15항에 있어서, 상기 제1의 본딩패드에는 입출력 버퍼가 근접해서 배치되어 있는 반도체 장치.
  17. 특허청구의 범위 제16항에 있어서, 상기 제2의 리이드는 상기 반도체칩의 코너부에서 상기 반도체칩의 바깥쪽으로 연장하는 반도체 장치.
  18. 특허청구의 범위 제17항에 있어서, 상기 제2의 리이드에 기준전위가 인가되는 반도체 장치.
  19. 특허청구의 범위 제17항에 있어서, 또 상기 제2의 리이드와는 전기적으로 독립으로 상기 반도체칩의 주면상에 연장하며, 또한 상기 반도체칩에서 바깥쪽으로 연장하는 또 다른 제2의 리이드를 포함하는 반도체 장치.
  20. 특허청구의 범위 제19항에 있어서, 상기 또 다른 제2의 리이드에는 전원전압이 인가되는 반도체 장치.
  21. 4각형상의 주면을 갖고, 그 주면에 여러개의 소자와 그 4각형상의 주면 주변부에 배열되어 있는 제1 및 제2의 본딩패드를 갖는 반도체칩, 상기 반도체칩을 덮는 봉지체, 각각이 상기 반도체칩 근방에 위치하는 제1의 끝부와 상기 봉지체의 바깥쪽에 위치하는 제2의 끝부를 갖고, 4각형상의 반도체칩의 4변에 대해서 수직방향으로 연장하는 여러개의 제1의 리이드, 상기 반도체칩의 주면상에 연장하고, 상기 반도체칩의 바깥쪽으로 연장하는 제2의 리이드, 상기 봉지체 내에 위치하고, 상기 제1의 리이드에 대해서 수직방향으로 연장하여 상기 제2의 리이드에 전기적으로 접속된 제3의 리이드 및 상기 봉지체 내부에 위치하여 상기 제1의 본딩패드와 상기 제1의 리이드의 제1의 끝부를 전기적으로 접속하는 제1의 접속수단과 상기 봉지체 내부에 위치하여 상기 제2의 본딩패드와 상기 제2의 리이드를 접속하는 제2의 접속수단을 포함하고, 상기 제3의 리이드는 상기 제1의 리이드의 적어도 1개의 전기적으로 접속되어 있는 반도체 장치.
  22. 특허청구의 범위 제21항에 있어서, 상기 제3의 리이드에 접속된 상기 제1의 리이드는 기준전위가 인가되는 리이드인 반도체 장치.
  23. 특허청구의 범위 제22항에 있어서, 상기 제3의 리이드와 상기 제1의 리이드는 절연층을 거쳐서 전기적으로 분리되어 있는 반도체 장치.
  24. 특허청구의 범위 제23항에 있어서, 상기 제2의 리이드의 반도체칩 바깥쪽에 위치하는 부분은 상기 봉지체 안쪽에 위치하는 반도체 장치.
  25. 특허청구의 범위 제23항에 있어서, 상기 제3의 리이드에 접속된 제1의 리이드는 상기 제1본딩패드에 접속되어 있지않는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910011600A 1990-07-20 1991-07-09 반도체장치 KR100202760B1 (ko)

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JP19222090 1990-07-20
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JP90-332648 1990-11-29
JP2332648A JP2983620B2 (ja) 1990-07-20 1990-11-29 半導体装置及びその製造方法

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KR100202760B1 KR100202760B1 (ko) 1999-06-15

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JP3572628B2 (ja) * 1992-06-03 2004-10-06 セイコーエプソン株式会社 半導体装置及びその製造方法
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
EP0576708A1 (de) * 1992-07-01 1994-01-05 Siemens Aktiengesellschaft Integrierter Schaltkreis mit Leiterrahmen
JP2570584B2 (ja) * 1993-07-30 1997-01-08 日本電気株式会社 半導体装置
JP3362530B2 (ja) * 1993-12-16 2003-01-07 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
JP3509274B2 (ja) * 1994-07-13 2004-03-22 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
JP3367299B2 (ja) * 1994-11-11 2003-01-14 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
JP3542677B2 (ja) * 1995-02-27 2004-07-14 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
JP3309686B2 (ja) * 1995-03-17 2002-07-29 セイコーエプソン株式会社 樹脂封止型半導体装置及びその製造方法
JP2752932B2 (ja) * 1995-09-28 1998-05-18 日本電気アイシーマイコンシステム株式会社 半導体集積回路パッケージ
US6133623A (en) * 1996-07-03 2000-10-17 Seiko Epson Corporation Resin sealing type semiconductor device that includes a plurality of leads and method of making the same

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