KR960012449A - 반도체장치 - Google Patents

반도체장치 Download PDF

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KR960012449A
KR960012449A KR1019950027089A KR19950027089A KR960012449A KR 960012449 A KR960012449 A KR 960012449A KR 1019950027089 A KR1019950027089 A KR 1019950027089A KR 19950027089 A KR19950027089 A KR 19950027089A KR 960012449 A KR960012449 A KR 960012449A
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South Korea
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semiconductor chip
die pad
pad portion
lead frame
leads
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KR1019950027089A
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English (en)
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가즈히로 데라다
구니히로 쯔보사끼
히로시 와따나베
가즈나리 스즈끼
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가나이 쯔또무
가부시끼가이샤 히다찌세이사꾸쇼
요네야마 사다오
가부시끼가이샤 히다찌마이컴시스템
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Publication of KR960012449A publication Critical patent/KR960012449A/ko

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Abstract

리이드 프레임 및 그것을 사용한 반도체 집적회로장치, 특히 수지 몰드형 LSI패키지를 갖는 반도체 집적회로장치에 적응하는데 유효한 기술에 관한 것으로써, 논리 LSI를 봉지하는 LSI패키지의 열저항을 저감할 수 있는 기술, 논리 LSI를 봉지하는 LSI패키지의 신뢰성을 향상시킬 수 있는 기술, 논리 LSI를 봉지하는 LSI패키지의 소량 다품종화를 촉진히킬 수 있는 기술, 논리 LSI를 봉지하는 LSI패키지의 저가격화를 촉진시킬 수 있는 기술, 논리 LSI를 봉지하는 LSI패키지의 QTAT화를 촉진시킬 수 있는 기술 및 논리 LSI를 봉지하는 LSI패키지의 다핀화를 촉진시킬 수 있는 기술을 제공하기 위해, 다이패드와 다이패드부를 둘러싸도록 배치된 여러개의 제1의 리이드를 갖는 리이드 프레임, 리이드 프레임에 탑재되고, 반도체 칩과 반도체 칩의 주면 상의 여러개의 제2의 리이드를 갖는 TAB(tape automated bonding)구조체 및 TAB구조체, 다이패드부 및 리이드프레임의 여러개의 제1의 리이드의 일부를 봉지하는 수지몰딩을 포함하고, 반도체칩은 그의 주면의 주위에 형성도된 본딩패드를 갖고, 반도체 칩의 이면이 다이패드부에 고정되며, 여러개의 제2의 리이드의 한쪽 끝부는 본딩패드와 접속되고, 여러게의 제2의 리이드의 다른쪽 끝부는 리이드 프레임의 여러개의 제1의 리이드의 하나의 끝부와 접속외며, 다이패드부의 영역이 상기 TAB 구조체에 반도체 칩의 영역 보다 크고, 다이패드부는 반도체 칩 아래에 배치된 제1의 슬릿 및 평명도 상에서의 반도체 칩의 외부에 배치된 제 2의 슬릿을 포함하는 반도체장치가 마련된다.
이것에 의해, 다이패드부 상에 어떠한 외형 치수의 반도체 칩을 탑재한 경우에도 반도체 칩의 이면의 일부가 몰드 수지와 직접 접촉하므로, 반도체 칩과 몰드 수지를 강고하게 밀착시킬 수 있고, 이것에 의해 다이패드부와 몰드 수지의 계면 박리를 억제하여 패키지 크랙이나 배선 부식을 방지할 수 있고, 다이패드부 상에 어떠한 외형 치수의 반도체 칩을 탑제한 경우에도 몰드시에 반도체 칩의 위쪽(또는 아래쪽)을 흐르는 수지가 슬릿을 통해 반도체 칩의 반대측으로 유입되므로, 몰드시 수지의 흐름이 반도체 칩의 상하에서 균일하게 되고, 페키지 본체의 내부의 응력을 저감할 수 있으며, 다이패드부 상에 외형 치수가 다른 각종 반도체 칩을 탑재할 수 있으므로 리이드 프레임을 표준화할 수 있고, 다비잇의 품종 마다 리이드 프레임을 새롭게 설계하는 작업이 불필요하게 되므로, 논리 LSI의 저가격화, 소량 다품종화, QTAT화를 촉진시킬 수 있다.

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예1인 리이드 프레임의 평면도.

Claims (9)

  1. 다이패드부와 상기 다이패드부를 둘러싸도록 배치된 여러개의 제1의 리이드를 갖는 가리드 프레임, 상기 리이드 프레임에 탑재되고, 반도체 칩과 반도체 칩의 주면 상의 여러개의 제2의 리이드를 갖는 TAB(tape automated bonding) 구조체 및 상기 TAB구조체, 상기 다이패드부 및 상기 리이드프레임의 여러개의 제1의 리이드의 일부를 봉지하는 수지몰딩을 포함하고, 상기 반도체 칩은 그의 주면의 주위에 형성된 본딩패드를 갖고, 상기 반도체 칩의 이면이 상기 다이패드부에 고정되며, 상기 여러게의 제2의 리이드의 한쪽 끝부는 상기 본딩패드와 접속되고, 상기 여러개의 제2의 리이드의 다른쪽 끝부는 상기 리이드 프레임의 상기 여러개의 제1의 리이드의 한쪽 끝부와 접속되며, 상기 다이패드부의 영역이 상기 TAB 구조체의 상기 반도체 칩의 영역보다 크고, 다이패드부는 상기 반도체 칩 아래에 배치된 제1의 슬릿 및 평명도 상에서의 반도체 칩의 외부에 배치된 제2의 슬릿을 포함하는 반도체장치.
  2. 제1항에 있어서, 상기 다이패드부는 상기 반도체 칩에 의해 생성된 열을 방산하는 히트스프레드 판으로써 사용되는 반도체장치.
  3. 제 2항에 있어서, 상기 리이드 프레임의 Cu로 이루어진 반도체장치.
  4. 다이패드부 및 그 주위에 여러개의 리이드를 갖는 리이드 프레임, 상기 다이패드부 상에 탑재되고 그 주면에 본딩패드를 갖는 반도체 칩, 상기 반도체 칩의 본딩패드와 상기 여러개의 리이드를 전기적으로 접속하는 수단 및 상기 반도체 칩, 상기 다이패드부 및 상기 여러개의 리이드의 일부를 봉지하는 수지체를 포함하며, 상기 다이패드부는 그 중앙에서 바깥둘레 방향으로 연장하는 제1의 슬릿과 그 바깥둘레를 따라서 배치된 제2의 슬릿을 갖고, 상기 제1의 슬릿의 바깥둘레측의 끝부는 상기 제2의 슬릿의 중앙측의 끝부 보다 상기 다이패드부의 바깥둘레측에 위치하고 있는 반도체장치.
  5. 제4항에 있어서, 상기 다이패드부에 형성된 상기 제1의 슬릿이 십자형을 이루고 있는 반도체장치.
  6. 제4항에 있어서, 상기 다이패드부의 바깥둘레를 따라서 형성된 절연재를 또 포함하는 반도체장치.
  7. 제4항에 있어서, 상기 다이패드부의 외형 치수는 상기 다이패드부에 탑재된 상기 반도체 칩의 외형 치수보다 큰 반도체장치.
  8. 제7항에 있어서, 상기 다이패드부의 한쪽 변은 상기 다이패드부에 탑재된 상기 반도체 칩의 한쪽 변 보다 적어도 2㎜ 이상 긴 반도체장치.
  9. 제4항에 있어서, 상기 본딩패드와 상기 여러개의 리이드의 일부를 접속하는 수단은 와이어이고, 상기 와이어의 표면을 절연막에 의해 피복되어 있는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950027089A 1994-09-01 1995-08-29 반도체장치 KR960012449A (ko)

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