KR970060463A - 수지밀봉형 반도체장치 및 그 제조방법 - Google Patents
수지밀봉형 반도체장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR970060463A KR970060463A KR1019970000968A KR19970000968A KR970060463A KR 970060463 A KR970060463 A KR 970060463A KR 1019970000968 A KR1019970000968 A KR 1019970000968A KR 19970000968 A KR19970000968 A KR 19970000968A KR 970060463 A KR970060463 A KR 970060463A
- Authority
- KR
- South Korea
- Prior art keywords
- bonding wire
- resin
- semiconductor device
- plate
- resin sealing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000011347 resin Substances 0.000 claims abstract 31
- 229920005989 resin Polymers 0.000 claims abstract 31
- 238000007789 sealing Methods 0.000 claims abstract 30
- 238000000034 method Methods 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 4
- 239000000853 adhesive Substances 0.000 claims 3
- 230000001070 adhesive effect Effects 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 238000005538 encapsulation Methods 0.000 claims 1
Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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Abstract
반도체칩의 주면에 형성된 복수의 전극패드에 Al, Au 등으로 이루어지는 본딩와이어의 일단이 접속되어 있다. 이 본딩와이어의 타단은 이 반도체칩을 피복하는 수지밀봉체 주면에 노출되어 있다. 이 본딩와이어의 노출부분상에는 Al로 이루어지는 인출전극이 형성되어 있다. 이 인출전극을 매개로 반도체칩과 외부회로가 전기적으로 접속되도록 되어 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 제1실시예의 수지밀봉형 반도체장치의 단면도.
Claims (26)
- 반도체칩(1)과; 복수의 본딩와이어(20) 및 상기 반도체칩(1)과 본딩와이어(20)를 밀봉하는 수지밀봉체(8)을 구비하여 구성되고, 상기 각 본딩와이어의 일단이 반도체칩(1)에 접속되고, 상기 각 본딩와이어의 타단이 수지밀봉체(8)의 표면에 직접 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제1항에 있어서, 상기 본딩와이어(20)의 타단이 스테거된 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제1항에 있어서, 상기 수지밀봉체(8)는 상면과, 저면 및 측면을 갖추고, 타단은 저면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제1항에 있어서, 상기 수지밀봉체(8)는 상면과, 저면 및 측면을 갖추고, 타단은 측면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제3항에 있어서, 각 본딩와이어(20)의 타단에 연결되고, 외부회로에 접속되는 인출전극(21)을 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제4항에 있어서, 각 본딩와이어(20)의 타단에 연결되고, 외부회로에 접속되는 인출전극(21)을 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치.
- 지지대(32,33)와; 이 지지대상에 반도체칩(1)과; 복수의 본딩와이어(20) 및; 상기 반도체칩 및 상기 지지대(32,33)를 밀봉하는 수지밀봉체(8)를 구비하여 구성되고, 상기 각 본딩와이어의 일단이 반도체칩(1)에 접속되고, 상기 각 본딩와이어의 타단이 수지밀봉체(8)의 표면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제7항에 있어서, 상기 본딩와이어(20)의 타단이 스테거된 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제7항에 있어서, 상기 수지밀봉체(8)는 상면과, 저면 및 측면을 갖추고, 타단은 저면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제7항에 있어서, 상기 수지밀봉체(8)는 상면과, 저면 및 측면을 갖추고, 타단은 측면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제7항에 있어서, 상기 지지대(33)는 수지 밀봉체와 같은 재료를 구비하는 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제7항에 있어서, 상기 지지대(33)는 금속으로 이루어져 있고, 상기 지지대의 저면이 수지 밀봉체의 표면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제11항에 있어서, 상기 본딩와이어(20)의 타단이 스테거된 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제12항에 있어서, 상기 본딩와이어(20)의 타단이 스테거된 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제13항에 있어서, 각 본딩와이어(20)의 타단에 연결되고, 외부회로에 접속되는 인출전극(21)을 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치.
- 제14항에 있어서, 각 본딩와이어(20)의 타단에 연결되고, 외부회로에 접속되는 인출전극(21)을 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치.
- 플레이트상에 반도체칩을 위치시키는 단계와; 본딩와이어의 일단을 상기 반도체칩에 연결하는 단계; 본딩와이어의 타단을 플레이트에 부착하는 단계; 수지밀봉체내에 반도체칩 및 본딩와이어를 밀봉하는 단계 및; 수지밀봉체 및 본딩와이어의 타단을 플레이트로부터 떼어내는 단계를 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 금속플레이트상에 반도체칩을 부착하는 단계와; 플레이트상에 금속플레이트를 위치시키는 단계; 본딩와이어의 일단을 반도체칩에 연결하는 단계; 본딩와이어의 타단을 플레이트에 부착하는 단계; 반도체칩과, 금속 플레이트 및 본딩와이어를 수지밀봉체내에 밀봉하는 단계 및; 수지밀봉체 및 본딩와이어의 타단을 플레이트로부터 떼어내는 단계를 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 수지플레이트상에 반도체칩을 부착하는 단계와; 플레이트상에 수지플레이트를 위치시키는 단계; 본딩와이어의 일단을 반도체칩에 연결하는 단계; 본딩와이어의 타단을 플레이트에 부착하는 단계; 반도체칩과, 플라스틱플레이트 및 본딩와이어를 수지밀봉체내에 밀봉하는 단계 및; 수지밀봉체 및 본딩와이어의 타단을 플레이트로부터 떼어내는 단계를 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 제19항에 있어서, 상기 수지밀봉체 및 상기 수지플레이트가 동일한 재료로 이루어진 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 제17항에 있어서, 상기 본딩와이어의 타단을 상기 플레이트에 부착하는 단계는 낮은 접착강도로 형성하는 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 제18항에 있어서, 상기 본딩와이어의 타단을 상기 플레이트에 부착하는 단계는 낮은 접착강도로 형성하는 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 제19항에 있어서, 상기 본딩와이어의 타단을 상기 플레이트에 부착하는 단계는 낮은 접착강도로 형성하는 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 제17항에 있어서, 상기 본딩와이어의 타단에 상기 인출전극을 부착하는 단계를 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 제18항에 있어서, 상기 본딩와이어의 타단에 상기 인출전극을 부착하는 단계를 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
- 제19항에 있어서, 상기 본딩와이어의 타단에 상기 인출전극을 부착하는 단계를 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JP02190096A JP3207738B2 (ja) | 1996-01-15 | 1996-01-15 | 樹脂封止型半導体装置及びその製造方法 |
JP96-021900 | 1996-01-15 |
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KR970060463A true KR970060463A (ko) | 1997-08-12 |
KR100241205B1 KR100241205B1 (ko) | 2000-02-01 |
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KR1019970000968A KR100241205B1 (ko) | 1996-01-15 | 1997-01-15 | 수지밀봉형 반도체장치 및 그 제조방법 |
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US (2) | US5869905A (ko) |
JP (1) | JP3207738B2 (ko) |
KR (1) | KR100241205B1 (ko) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG60102A1 (en) * | 1996-08-13 | 1999-02-22 | Sony Corp | Lead frame semiconductor package having the same and method for manufacturing the same |
US6215184B1 (en) * | 1998-02-19 | 2001-04-10 | Texas Instruments Incorporated | Optimized circuit design layout for high performance ball grid array packages |
JP3741184B2 (ja) * | 1998-07-27 | 2006-02-01 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置 |
KR100379835B1 (ko) * | 1998-12-31 | 2003-06-19 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지및그제조방법 |
JP3575001B2 (ja) | 1999-05-07 | 2004-10-06 | アムコー テクノロジー コリア インコーポレーティド | 半導体パッケージ及びその製造方法 |
KR100384335B1 (ko) * | 1999-05-18 | 2003-05-16 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지와 그 제조방법 |
JP3398721B2 (ja) * | 1999-05-20 | 2003-04-21 | アムコー テクノロジー コリア インコーポレーティド | 半導体パッケージ及びその製造方法 |
JP3397725B2 (ja) * | 1999-07-07 | 2003-04-21 | 沖電気工業株式会社 | 半導体装置、その製造方法及び半導体素子実装用テープの製造方法 |
JP3560869B2 (ja) * | 1999-09-24 | 2004-09-02 | シャープ株式会社 | 半導体装置の製造方法 |
KR100332967B1 (ko) * | 2000-05-10 | 2002-04-19 | 윤종용 | 디지털 마이크로-미러 디바이스 패키지의 제조 방법 |
US6762502B1 (en) * | 2000-08-31 | 2004-07-13 | Micron Technology, Inc. | Semiconductor device packages including a plurality of layers substantially encapsulating leads thereof |
US6770959B2 (en) | 2000-12-15 | 2004-08-03 | Silconware Precision Industries Co., Ltd. | Semiconductor package without substrate and method of manufacturing same |
JP4014912B2 (ja) * | 2001-09-28 | 2007-11-28 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2003338587A (ja) * | 2002-05-21 | 2003-11-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
US7109574B2 (en) * | 2002-07-26 | 2006-09-19 | Stmicroelectronics, Inc. | Integrated circuit package with exposed die surfaces and auxiliary attachment |
US6921860B2 (en) | 2003-03-18 | 2005-07-26 | Micron Technology, Inc. | Microelectronic component assemblies having exposed contacts |
AU2003231137A1 (en) * | 2003-04-29 | 2004-11-26 | Semiconductor Components Industries L.L.C. | Method of making a low profile packaged semiconductor device |
DE10332009B4 (de) * | 2003-07-14 | 2008-01-31 | Infineon Technologies Ag | Halbleiterbauelement mit elektromagnetischer Abschirmvorrichtung |
US7009296B1 (en) | 2004-01-15 | 2006-03-07 | Amkor Technology, Inc. | Semiconductor package with substrate coupled to a peripheral side surface of a semiconductor die |
US7205178B2 (en) * | 2004-03-24 | 2007-04-17 | Freescale Semiconductor, Inc. | Land grid array packaged device and method of forming same |
US20070216033A1 (en) * | 2006-03-20 | 2007-09-20 | Corisis David J | Carrierless chip package for integrated circuit devices, and methods of making same |
DE102006033701B4 (de) * | 2006-07-20 | 2012-02-23 | Infineon Technologies Ag | Herstellungsverfahren für ein elektronisches Bauelement in VQFN-Bauweise |
US9466545B1 (en) | 2007-02-21 | 2016-10-11 | Amkor Technology, Inc. | Semiconductor package in package |
US7750465B2 (en) * | 2007-02-28 | 2010-07-06 | Freescale Semiconductor, Inc. | Packaged integrated circuit |
US20090042339A1 (en) * | 2007-08-10 | 2009-02-12 | Texas Instruments Incorporated | Packaged integrated circuits and methods to form a packaged integrated circuit |
US7932131B2 (en) * | 2007-11-05 | 2011-04-26 | Spansion Llc | Reduction of package height in a stacked die configuration |
KR20120119395A (ko) * | 2011-04-21 | 2012-10-31 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
CN104576411A (zh) * | 2013-10-25 | 2015-04-29 | 飞思卡尔半导体公司 | 双角部顶部闸道模制 |
US9837385B1 (en) * | 2017-03-16 | 2017-12-05 | Powertech Technology Inc. | Substrate-less package structure |
JP6971908B2 (ja) * | 2017-04-20 | 2021-11-24 | 旭化成エレクトロニクス株式会社 | 磁気検出装置、電流検出装置、磁気検出装置の製造方法、及び電流検出装置の製造方法 |
US11121467B2 (en) | 2019-06-24 | 2021-09-14 | Nxp Usa, Inc. | Semiconductor package with compact antenna formed using three-dimensional additive manufacturing process |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524707B1 (fr) * | 1982-04-01 | 1985-05-31 | Cit Alcatel | Procede d'encapsulation de composants semi-conducteurs, et composants encapsules obtenus |
JPS63249345A (ja) | 1987-04-06 | 1988-10-17 | Olympus Optical Co Ltd | フレキシブル搭載基板 |
JPS6482656A (en) * | 1987-09-25 | 1989-03-28 | Nec Corp | Sealing structure for hybrid integrated circuit |
JPH01106456A (ja) * | 1987-10-19 | 1989-04-24 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
US5049358A (en) * | 1988-09-30 | 1991-09-17 | Miles Inc. | Composition and test device for assaying for proteins |
JPH034543A (ja) * | 1989-05-31 | 1991-01-10 | Ricoh Co Ltd | 半導体装置 |
JPH0324752A (ja) * | 1989-06-22 | 1991-02-01 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US5200362A (en) * | 1989-09-06 | 1993-04-06 | Motorola, Inc. | Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film |
JPH03249345A (ja) * | 1990-02-28 | 1991-11-07 | Hitachi Ltd | 電子制御燃料噴射装置 |
JPH03297163A (ja) * | 1990-04-16 | 1991-12-27 | Mitsubishi Electric Corp | 半導体装置用リードフレーム |
US5220489A (en) * | 1991-10-11 | 1993-06-15 | Motorola, Inc. | Multicomponent integrated circuit package |
MY111779A (en) * | 1994-11-10 | 2000-12-30 | Nitto Denko Corp | Semiconductor device |
US6001671A (en) * | 1996-04-18 | 1999-12-14 | Tessera, Inc. | Methods for manufacturing a semiconductor package having a sacrificial layer |
JP3897478B2 (ja) * | 1999-03-31 | 2007-03-22 | 松下電器産業株式会社 | 樹脂封止型半導体装置の製造装置及びその製造方法 |
-
1996
- 1996-01-15 JP JP02190096A patent/JP3207738B2/ja not_active Expired - Lifetime
-
1997
- 1997-01-14 US US08/782,259 patent/US5869905A/en not_active Expired - Fee Related
- 1997-01-15 KR KR1019970000968A patent/KR100241205B1/ko not_active IP Right Cessation
-
1998
- 1998-08-12 US US09/132,716 patent/US6258632B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US5869905A (en) | 1999-02-09 |
JPH09199637A (ja) | 1997-07-31 |
JP3207738B2 (ja) | 2001-09-10 |
US6258632B1 (en) | 2001-07-10 |
KR100241205B1 (ko) | 2000-02-01 |
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