KR970060463A - 수지밀봉형 반도체장치 및 그 제조방법 - Google Patents

수지밀봉형 반도체장치 및 그 제조방법 Download PDF

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Publication number
KR970060463A
KR970060463A KR1019970000968A KR19970000968A KR970060463A KR 970060463 A KR970060463 A KR 970060463A KR 1019970000968 A KR1019970000968 A KR 1019970000968A KR 19970000968 A KR19970000968 A KR 19970000968A KR 970060463 A KR970060463 A KR 970060463A
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South Korea
Prior art keywords
bonding wire
resin
semiconductor device
plate
resin sealing
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KR1019970000968A
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English (en)
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KR100241205B1 (ko
Inventor
나오토 다케베
Original Assignee
니시무로 타이조
가부시키가이샤 도시바
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Publication of KR970060463A publication Critical patent/KR970060463A/ko
Application granted granted Critical
Publication of KR100241205B1 publication Critical patent/KR100241205B1/ko

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    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

반도체칩의 주면에 형성된 복수의 전극패드에 Al, Au 등으로 이루어지는 본딩와이어의 일단이 접속되어 있다. 이 본딩와이어의 타단은 이 반도체칩을 피복하는 수지밀봉체 주면에 노출되어 있다. 이 본딩와이어의 노출부분상에는 Al로 이루어지는 인출전극이 형성되어 있다. 이 인출전극을 매개로 반도체칩과 외부회로가 전기적으로 접속되도록 되어 있다.

Description

수지밀봉형 반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 제1실시예의 수지밀봉형 반도체장치의 단면도.

Claims (26)

  1. 반도체칩(1)과; 복수의 본딩와이어(20) 및 상기 반도체칩(1)과 본딩와이어(20)를 밀봉하는 수지밀봉체(8)을 구비하여 구성되고, 상기 각 본딩와이어의 일단이 반도체칩(1)에 접속되고, 상기 각 본딩와이어의 타단이 수지밀봉체(8)의 표면에 직접 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
  2. 제1항에 있어서, 상기 본딩와이어(20)의 타단이 스테거된 것을 특징으로 하는 수지밀봉형 반도체장치.
  3. 제1항에 있어서, 상기 수지밀봉체(8)는 상면과, 저면 및 측면을 갖추고, 타단은 저면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
  4. 제1항에 있어서, 상기 수지밀봉체(8)는 상면과, 저면 및 측면을 갖추고, 타단은 측면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
  5. 제3항에 있어서, 각 본딩와이어(20)의 타단에 연결되고, 외부회로에 접속되는 인출전극(21)을 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치.
  6. 제4항에 있어서, 각 본딩와이어(20)의 타단에 연결되고, 외부회로에 접속되는 인출전극(21)을 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치.
  7. 지지대(32,33)와; 이 지지대상에 반도체칩(1)과; 복수의 본딩와이어(20) 및; 상기 반도체칩 및 상기 지지대(32,33)를 밀봉하는 수지밀봉체(8)를 구비하여 구성되고, 상기 각 본딩와이어의 일단이 반도체칩(1)에 접속되고, 상기 각 본딩와이어의 타단이 수지밀봉체(8)의 표면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
  8. 제7항에 있어서, 상기 본딩와이어(20)의 타단이 스테거된 것을 특징으로 하는 수지밀봉형 반도체장치.
  9. 제7항에 있어서, 상기 수지밀봉체(8)는 상면과, 저면 및 측면을 갖추고, 타단은 저면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
  10. 제7항에 있어서, 상기 수지밀봉체(8)는 상면과, 저면 및 측면을 갖추고, 타단은 측면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
  11. 제7항에 있어서, 상기 지지대(33)는 수지 밀봉체와 같은 재료를 구비하는 것을 특징으로 하는 수지밀봉형 반도체장치.
  12. 제7항에 있어서, 상기 지지대(33)는 금속으로 이루어져 있고, 상기 지지대의 저면이 수지 밀봉체의 표면에 노출되는 것을 특징으로 하는 수지밀봉형 반도체장치.
  13. 제11항에 있어서, 상기 본딩와이어(20)의 타단이 스테거된 것을 특징으로 하는 수지밀봉형 반도체장치.
  14. 제12항에 있어서, 상기 본딩와이어(20)의 타단이 스테거된 것을 특징으로 하는 수지밀봉형 반도체장치.
  15. 제13항에 있어서, 각 본딩와이어(20)의 타단에 연결되고, 외부회로에 접속되는 인출전극(21)을 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치.
  16. 제14항에 있어서, 각 본딩와이어(20)의 타단에 연결되고, 외부회로에 접속되는 인출전극(21)을 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치.
  17. 플레이트상에 반도체칩을 위치시키는 단계와; 본딩와이어의 일단을 상기 반도체칩에 연결하는 단계; 본딩와이어의 타단을 플레이트에 부착하는 단계; 수지밀봉체내에 반도체칩 및 본딩와이어를 밀봉하는 단계 및; 수지밀봉체 및 본딩와이어의 타단을 플레이트로부터 떼어내는 단계를 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  18. 금속플레이트상에 반도체칩을 부착하는 단계와; 플레이트상에 금속플레이트를 위치시키는 단계; 본딩와이어의 일단을 반도체칩에 연결하는 단계; 본딩와이어의 타단을 플레이트에 부착하는 단계; 반도체칩과, 금속 플레이트 및 본딩와이어를 수지밀봉체내에 밀봉하는 단계 및; 수지밀봉체 및 본딩와이어의 타단을 플레이트로부터 떼어내는 단계를 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  19. 수지플레이트상에 반도체칩을 부착하는 단계와; 플레이트상에 수지플레이트를 위치시키는 단계; 본딩와이어의 일단을 반도체칩에 연결하는 단계; 본딩와이어의 타단을 플레이트에 부착하는 단계; 반도체칩과, 플라스틱플레이트 및 본딩와이어를 수지밀봉체내에 밀봉하는 단계 및; 수지밀봉체 및 본딩와이어의 타단을 플레이트로부터 떼어내는 단계를 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  20. 제19항에 있어서, 상기 수지밀봉체 및 상기 수지플레이트가 동일한 재료로 이루어진 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  21. 제17항에 있어서, 상기 본딩와이어의 타단을 상기 플레이트에 부착하는 단계는 낮은 접착강도로 형성하는 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  22. 제18항에 있어서, 상기 본딩와이어의 타단을 상기 플레이트에 부착하는 단계는 낮은 접착강도로 형성하는 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  23. 제19항에 있어서, 상기 본딩와이어의 타단을 상기 플레이트에 부착하는 단계는 낮은 접착강도로 형성하는 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  24. 제17항에 있어서, 상기 본딩와이어의 타단에 상기 인출전극을 부착하는 단계를 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  25. 제18항에 있어서, 상기 본딩와이어의 타단에 상기 인출전극을 부착하는 단계를 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
  26. 제19항에 있어서, 상기 본딩와이어의 타단에 상기 인출전극을 부착하는 단계를 더 구비하여 구성된 것을 특징으로 하는 수지밀봉형 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970000968A 1996-01-15 1997-01-15 수지밀봉형 반도체장치 및 그 제조방법 KR100241205B1 (ko)

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