KR890015399A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

Info

Publication number
KR890015399A
KR890015399A KR1019890002852A KR890002852A KR890015399A KR 890015399 A KR890015399 A KR 890015399A KR 1019890002852 A KR1019890002852 A KR 1019890002852A KR 890002852 A KR890002852 A KR 890002852A KR 890015399 A KR890015399 A KR 890015399A
Authority
KR
South Korea
Prior art keywords
inner lead
semiconductor chip
lead
insulating material
lead frame
Prior art date
Application number
KR1019890002852A
Other languages
English (en)
Other versions
KR970011649B1 (ko
Inventor
다까히로 나이또
겐 무라까미
히로미찌 스즈끼
하지메 사또
와헤이 가따무라
마사찌까 마스다
Original Assignee
미다 가쓰시게
가부시끼가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63057902A external-priority patent/JP2564596B2/ja
Priority claimed from JP63057520A external-priority patent/JP2564595B2/ja
Application filed by 미다 가쓰시게, 가부시끼가이샤 히다찌세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR890015399A publication Critical patent/KR890015399A/ko
Application granted granted Critical
Publication of KR970011649B1 publication Critical patent/KR970011649B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49558Insulating layers on lead frames, e.g. bridging members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201Structure
    • H01L2224/32012Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92142Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92147Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49121Beam lead frame or beam lead device

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

내용 없음

Description

반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 따른 반도체장치의 제조방법의 제 1 실시예에 사용된 리이드 프레임의 일부를 도시한 평면도. 제 2 도는 본 발명에 따른 반도체장치의 제조방법에 사용된 반도체칩의 평면도.

Claims (18)

  1. 각각 일정한 간격을 갖고 연결부에 의하여 함께 연결된 내부 리이드를 갖는 리이드프레임을 마련하며, 상기 연결부와 내부리이드의 둘러싼 부분에 절연물질을 접착하는 공정, 상기 절연물질층의 남은 부분에 의하여 일정한 간격으로 유지되고 서로 분리되는 내부리이드의 끝부분을 형성하도록 상기 연결부와 절연 물질층의 부분을 제거하는 공정, 상기 내부 리이드의 끝부분에 본딩 패드를 갖는 반도체 칩을 연결하는 공정, 와이어수단에 의해 상기 반도체 칩상의 본딩패드와 상기 내부리이드를 연결하는 공정, 상기 반도체 칩, 절연물질층의남은 부분, 상기 내부리이드, 상기 와이어, 상기 끝부분의 면이 부분적으로 겹치는 상기 반도체 칩의 한쪽면의 주변부를 수지물질로 봉지하는 공정을 포함하는 반도체장치의 제조방법.
  2. 특허청구의 범위 제 1 항에 있어서, 상기 내부리이드의 끝부분의 두께와 상기 연결부의 두께는 상기 리이드 프레임의 다른부분의 두께보다 작은 반도체장치의 제조방법.
  3. 특허청구의 범위 제 1 항에 있어서, 반도체 칩은 절연물질층의 나머지부분과 접합재를 거쳐 내부리이드의 상기 끝부분상에 탑재되어지는 반도체장치의 제조방법.
  4. 연결부에 연결된 내부리이드를 갖는 리이드프레임을 형성하는 공정, 상기 연결부의 윗면과 상기 연결부에 인접한 내부리이드의 부분의 윗면에 절연물질을 접착하는 공정, 상기 연결부와 절연물질이 상기 내부리이드의 인접한 부분의 윗면에 접착된 절연물질의 부분에 의하여 각각으로 부터 일정한 간격을 유지하는 상기 내부리이드의 끝부분을 형성하도록 윗면에 접착된 절연물질을 제거하는 공정, 상기 끝부분에 반도체 칩을 고착시키는 공정, 반도체 칩의 주면위에 형성된 본딩패드와 내부리이드는 와이어의 수단에 의하여 연결되는 공정, 상기 반도체 칩, 상기 내부리이드에 접착된 절연물질의 부분, 상기 와이어를 봉지하는 공정을 포함하며, 상기 주면의 반대면이 상기 절연물질을 거쳐서 상기 인접한 부분의 윗면위에 부분적으로 겹쳐지는 반도체 장치의 제조방법.
  5. 리이드 프레임의 연결부에 연결되는 내부리이드를 갖는 리이드 프레임을 형성하는 공정, 상기 연결부와 상기 내부리이드의 인접한 부분의 아랫면에 중합체의절연물질을 접착하는 공정, 각각으로 부터 일정한 간격을 갖는 상기 내부리이드의 끝부분을 형성하도록 상기 연결부를 제거하는 공정, 상기 끝부분위에 반도체 칩을 탑재하는 공정, 상기 반도체 칩의 주면상에 형성된 본딩패드와 내부 리이드를 와이어의 수단에 의하여 연결하는 공정, 상기 반도체 칩, 중합체의 절연물질, 상기 내부리이드 및 와이어를 수지로 봉지하는 공정을 포함하며, 상기 주면의 반대면이 절연물질을 거쳐서 상기 끝부분의 윗면에 부분적으로 겹쳐지는 반도체장치의제조방법.
  6. 특허청구의 범위 제 5 항에 있어서, 상기 내부리이드의 끝부분의 두께와 상기 연결부의 두께는 상기 리이드프레임의 다른 부분의 두께보다 작은 반도체장치의 제조방법.
  7. 특허청구의 범위 제 5 항에 있어서, 상기 내부리이드의 끝부분이 상기 리이드프레임의 다른 부분에 비해서 아래쪽으로 휘어지는 반도체장치의 제조방법.
  8. 반도체 칩을 리이드 프레임에 접합하고, 상기 반도체 칩의 본딩패드와 상기 리이드프레임의 내부리이드를 각각 전기적으로 연결하고, 그후 상기 반도체 칩과 상기 반도체 칩을 둘러싼 부분을 수지로 봉지하는 반도체장치의 제조방법에 있어서, 리이드프레임의 중심부분위에 위치한 리이드프레임의 연결부에 일체로 연결되고 서로 일정한 간격을 갖는 내부리이드를 갖도록 리이드 프레임을 마련하고, 상기 연결부와 끝부분이 형성되도록 상기 리이드 프레임의 상기 내부리이드의 아래면 부분에 중합체의 절연 테이프를 접착하고, 상기 내부리이드 사이의 일정한 간격이 상기 절연 테이프의 부분에 의해 유지되도록 상기 연결부를 제거하여 상기 내부리이드의 끝부분을 형성하며, 반도체 칩의 주면이 상기 내부리이드의 끝부분의 아래면에 부분적으로 겹쳐지고, 상기 절연테이프의 상기 부분을 거쳐서 상기 끝부분에 접합된 후, 상기 반도체 칩의 본딩패드와 상기 내부 리이드가 겹쳐진 부분에서 와이어 수단에 의해 서로 연결되는 반도체장치의 제조방법.
  9. 특허청구의 범위 제 8 항에 있어서, 상기 반도체 칩은 상기 내부리이드와 상기 반도체 칩 사이의 겹쳐진 위치에서 상기 내부리이드를 접합재로 접합하는 반도체장치의 제조방법.
  10. 특허청구의 범위 제 8 항에 있어서, 탭만이 형성된 다른 리이드 프레임을 마련하고, 상기 반도체 칩의 반대면이 상기 탭에 접합된 후 상기 내부 리이드의 끝부분이 상기 반도체 칩의 주면의 부분위에 겹쳐지는 반도체장치의 제조방법.
  11. 반도체 칩을 리이드프레임에 접합하고, 상기 반도체 칩의 본딩패드와 상기 리이드프레임의 내부 리이드를 각각 전기적으로 연결하는 반도체장치의 제조방법에 있어서, 상기 내부리이드의 끝부분에 형성되도록 그 부분에서 일정한 간격을 갖는 여러개의 내부리이드에 연결된 연결부를 갖는 리이드 프레임을 마련하고, 상기 연결부와 상기 리이드프레임의 상기 내부리이드의 아래면 부분에 중합체의 절연테이프를 접착하고, 상기 내부리이드사이의 일정한 간격이 상기 중합체의 절연테이프의 부분에 의해 유지되도록 상기 리이드프레임의 연결부를 제거하여 상기 내부리이드의 끝부분을 형성하며, 반도체 칩이 상기 내부리이드의 끝부분의 윗면에 접합된 후 상기 반도체 칩의 본딩패드와 상기 내부리이드가 와이어 수단에 의해 서로 연결되는 반도체장치의 제조방법.
  12. 특허청구의 범위 제11항에 있어서, 상기 절연 테이프를 상기 내부리이드의 상기 부분에 접착하여, 상기 절연테이프가 상기 내부리이드의 상기 부분의 아래면에 접착되는 반도체장치의 제조방법.
  13. 특허청구의 범위 제 11항에 있어서, 상기 절연테이프를 상기 내부리이드의 상기 부분에 접착하여, 상기 절연테이프가 상기 내부리이드의 상기 부분의 아래면에 접착되는 반도체장치의 제조방법.
  14. 특허청구의 범위 제 11항에 있어서, 상기 리이드프레임은 상기 내부리이드의 끝부분의 두께가 상기 내부리이드의 다른부분의 두께보다 작게 형성되는 반도체장치의 제조방법.
  15. 특허청구의 범위 제11항에 있어서, 상기 중합체의 절연테이프는 중합체의 수지로 구성되는 반도체장치의 제조방법.
  16. 리이드프레임의 중심부를 향해서 안으로 확장되고 서로 일정한 간격을 갖는 내부리이드와 외부리이드를 갖는 리이드프레임, 끝부분의 간격을 유지하도록 상기 내부리이드의 끝부분에 접착된 중합체의 절연물질, 내부리이드의 상기 끝부분에 탑재되고, 칩의 주변부분과 끝부분의 평면이 겹쳐지도록 배치된 반도체 칩, 상기 내부리이드와 상기 반도체 칩상의 본딩패드를 전기적으로 연결하는 와이어, 외부리이드가 수지로 부터 바깥쪽으로 확장되고, 상기 와이어, 상기 반도체 칩 및 절연물질, 상기 내부 리이드를 봉지하는 수지를 포함하는 반도체장치.
  17. 특허청구의 범위 제16항에 있어서, 절연물질은 상기 반도체 칩의 평면과 상기 끝부분의 평면사이에 배치되고, 상기 칩을 접합재로 절연물질에 접착되는 반도체장치.
  18. 특허청구의 범위 제16항에 있어서, 절연물질은 상기 반도체 칩에 의하여 겹쳐지는 끝부분의 평면과 반대로 배치된 상기 끝부분의 평면에 접착되는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890002852A 1988-03-10 1989-03-08 반도체 장치의 제조방법 KR970011649B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63-57902 1988-03-10
JP63057902A JP2564596B2 (ja) 1988-03-10 1988-03-10 半導体装置の製造方法
JP63-57520 1988-03-11
JP63057520A JP2564595B2 (ja) 1988-03-11 1988-03-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR890015399A true KR890015399A (ko) 1989-10-30
KR970011649B1 KR970011649B1 (ko) 1997-07-12

Family

ID=26398581

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890002852A KR970011649B1 (ko) 1988-03-10 1989-03-08 반도체 장치의 제조방법

Country Status (2)

Country Link
US (1) US4994411A (ko)
KR (1) KR970011649B1 (ko)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2582013B2 (ja) * 1991-02-08 1997-02-19 株式会社東芝 樹脂封止型半導体装置及びその製造方法
US5278101A (en) * 1989-06-28 1994-01-11 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US5583375A (en) * 1990-06-11 1996-12-10 Hitachi, Ltd. Semiconductor device with lead structure within the planar area of the device
EP0463758A1 (en) * 1990-06-22 1992-01-02 Digital Equipment Corporation Hollow chip package and method of manufacture
US5377077A (en) * 1990-08-01 1994-12-27 Staktek Corporation Ultra high density integrated circuit packages method and apparatus
US5367766A (en) * 1990-08-01 1994-11-29 Staktek Corporation Ultra high density integrated circuit packages method
US5475920A (en) * 1990-08-01 1995-12-19 Burns; Carmen D. Method of assembling ultra high density integrated circuit packages
EP0509065A1 (en) * 1990-08-01 1992-10-21 Staktek Corporation Ultra high density integrated circuit packages, method and apparatus
US5446620A (en) * 1990-08-01 1995-08-29 Staktek Corporation Ultra high density integrated circuit packages
KR940002444B1 (ko) * 1990-11-13 1994-03-24 금성일렉트론 주식회사 반도체 소자의 패키지 어셈블리 방법
US5087962A (en) * 1991-02-25 1992-02-11 Motorola Inc. Insulated lead frame using plasma sprayed dielectric
US5448450A (en) * 1991-08-15 1995-09-05 Staktek Corporation Lead-on-chip integrated circuit apparatus
US5221642A (en) * 1991-08-15 1993-06-22 Staktek Corporation Lead-on-chip integrated circuit fabrication method
US5451813A (en) * 1991-09-05 1995-09-19 Rohm Co., Ltd. Semiconductor device with lead frame having different thicknesses
JPH05102364A (ja) * 1991-10-11 1993-04-23 Rohm Co Ltd 電子部品用リードフレームの製造方法
US5256598A (en) * 1992-04-15 1993-10-26 Micron Technology, Inc. Shrink accommodating lead frame
US5702985A (en) * 1992-06-26 1997-12-30 Staktek Corporation Hermetically sealed ceramic integrated circuit heat dissipating package fabrication method
DE4231705C2 (de) * 1992-09-22 1998-04-30 Siemens Ag Halbleitervorrichtung mit einem Systemträger und einem damit verbundenen Halbleiterchip sowie Verfahren zu deren Herstellung
US5308797A (en) * 1992-11-24 1994-05-03 Texas Instruments Incorporated Leads for semiconductor chip assembly and method
US5484959A (en) * 1992-12-11 1996-01-16 Staktek Corporation High density lead-on-package fabrication method and apparatus
US6205654B1 (en) 1992-12-11 2001-03-27 Staktek Group L.P. Method of manufacturing a surface mount package
US5286679A (en) * 1993-03-18 1994-02-15 Micron Technology, Inc. Method for attaching a semiconductor die to a leadframe using a patterned adhesive layer
US5801437A (en) * 1993-03-29 1998-09-01 Staktek Corporation Three-dimensional warp-resistant integrated circuit module method and apparatus
US5369056A (en) * 1993-03-29 1994-11-29 Staktek Corporation Warp-resistent ultra-thin integrated circuit package fabrication method
US5644161A (en) * 1993-03-29 1997-07-01 Staktek Corporation Ultra-high density warp-resistant memory module
US5474958A (en) * 1993-05-04 1995-12-12 Motorola, Inc. Method for making semiconductor device having no die supporting surface
US5385869A (en) * 1993-07-22 1995-01-31 Motorola, Inc. Semiconductor chip bonded to a substrate and method of making
US5414299A (en) * 1993-09-24 1995-05-09 Vlsi Technology, Inc. Semi-conductor device interconnect package assembly for improved package performance
US5397746A (en) * 1993-11-03 1995-03-14 Intel Corporation Quad flat package heat slug composition
US5834831A (en) * 1994-08-16 1998-11-10 Fujitsu Limited Semiconductor device with improved heat dissipation efficiency
JPH08212185A (ja) * 1995-01-31 1996-08-20 Mitsubishi Electric Corp マイクロコンピュータ
US6281044B1 (en) 1995-07-31 2001-08-28 Micron Technology, Inc. Method and system for fabricating semiconductor components
TW315491B (en) * 1995-07-31 1997-09-11 Micron Technology Inc Apparatus for applying adhesive tape for semiconductor packages
US5696033A (en) * 1995-08-16 1997-12-09 Micron Technology, Inc. Method for packaging a semiconductor die
US6025642A (en) * 1995-08-17 2000-02-15 Staktek Corporation Ultra high density integrated circuit packages
JPH09270488A (ja) * 1996-01-29 1997-10-14 Fujitsu Ltd 半導体装置の製造方法
US5945732A (en) * 1997-03-12 1999-08-31 Staktek Corporation Apparatus and method of manufacturing a warp resistant thermally conductive integrated circuit package
US6297548B1 (en) * 1998-06-30 2001-10-02 Micron Technology, Inc. Stackable ceramic FBGA for high thermal applications
US6572387B2 (en) 1999-09-24 2003-06-03 Staktek Group, L.P. Flexible circuit connector for stacked chip module
US6700210B1 (en) * 1999-12-06 2004-03-02 Micron Technology, Inc. Electronic assemblies containing bow resistant semiconductor packages
US6384487B1 (en) * 1999-12-06 2002-05-07 Micron Technology, Inc. Bow resistant plastic semiconductor package and method of fabrication
US6608763B1 (en) 2000-09-15 2003-08-19 Staktek Group L.P. Stacking system and method
US6462408B1 (en) 2001-03-27 2002-10-08 Staktek Group, L.P. Contact member stacking system and method
JP2002299540A (ja) * 2001-04-04 2002-10-11 Hitachi Ltd 半導体装置およびその製造方法
US20040108580A1 (en) * 2002-12-09 2004-06-10 Advanpack Solutions Pte. Ltd. Leadless semiconductor packaging structure with inverted flip chip and methods of manufacture
KR100621555B1 (ko) * 2004-02-04 2006-09-14 삼성전자주식회사 리드 프레임, 이를 이용한 반도체 칩 패키지 및 그의 제조방법
JP4453498B2 (ja) * 2004-09-22 2010-04-21 富士電機システムズ株式会社 パワー半導体モジュールおよびその製造方法
JP4489100B2 (ja) * 2007-06-18 2010-06-23 株式会社東芝 半導体パッケージ
SG142321A1 (en) 2008-04-24 2009-11-26 Micron Technology Inc Pre-encapsulated cavity interposer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133643A (en) * 1981-02-13 1982-08-18 Hitachi Ltd Bonding method
JPS5998547A (ja) * 1982-11-26 1984-06-06 Hitachi Ltd 半導体装置とその製造方法
JPS61236130A (ja) * 1985-04-12 1986-10-21 Hitachi Ltd 半導体装置
JPH0740600B2 (ja) * 1987-04-30 1995-05-01 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US4994411A (en) 1991-02-19
KR970011649B1 (ko) 1997-07-12

Similar Documents

Publication Publication Date Title
KR890015399A (ko) 반도체장치의 제조방법
US3591839A (en) Micro-electronic circuit with novel hermetic sealing structure and method of manufacture
KR970067781A (ko) 반도체 장치와 그의 제조방법 및 집합형 반도체 장치
KR840006561A (ko) 반도체장치 및 그 조립방법
KR940022755A (ko) 반도체 장치 및 그 제조방법과 반도체장치용 리드프레임(Lead frame)
KR860007735A (ko) 반도체장치 및 그 제조방법과 그 제조방법에 사용하는 리이드 프레임
KR900005587A (ko) 반도체 디바이스 및 그 제작방법
KR970060463A (ko) 수지밀봉형 반도체장치 및 그 제조방법
KR920010853A (ko) 수지봉지형 반도체장치
KR950002000A (ko) 플라스틱 반도체 패키지 및 그 제조방법
KR950001998A (ko) 소형 다이 패드를 갖고 있는 반도체 디바이스 및 이의 제조 방법
KR970077540A (ko) 칩 사이즈 패키지의 제조방법
KR980006167A (ko) 버텀리드 반도체 패키지
JPS60167454A (ja) 半導体装置
KR920005309A (ko) 저가의 소거가능하고 프로그램가능한 판독 전용 메모리 팩키지 및 그 제조 방법
KR910001949A (ko) 무플래그 리드프레임, 피키지 및 방법
KR970077602A (ko) 칩접착부가 일체형으로 형성된 타이바를 갖는 패드리스 리드프레임과 이를 이용한 반도체 칩 패키지
JPS62154769A (ja) 半導体装置
KR940008060A (ko) 반도체 집적회로 장치
KR940002773Y1 (ko) 다이접착에 적합한 리드프레임 구조
KR960005965A (ko) 반도체 장치
KR0124547Y1 (ko) 멀티형 리드프레임을 이용한 반도체 장치
KR950002001A (ko) 반도체 패키지
KR0184447B1 (ko) 본딩테이프의 구조
KR0135890Y1 (ko) 리드온칩 패키지

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20000707

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee