KR870009453A - 수지봉합형 반도체장치 - Google Patents
수지봉합형 반도체장치 Download PDFInfo
- Publication number
- KR870009453A KR870009453A KR1019860006424A KR860006424A KR870009453A KR 870009453 A KR870009453 A KR 870009453A KR 1019860006424 A KR1019860006424 A KR 1019860006424A KR 860006424 A KR860006424 A KR 860006424A KR 870009453 A KR870009453 A KR 870009453A
- Authority
- KR
- South Korea
- Prior art keywords
- resin
- semiconductor device
- sealed semiconductor
- heat sink
- mold layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000011347 resin Substances 0.000 title claims 6
- 229920005989 resin Polymers 0.000 title claims 6
- 238000007789 sealing Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 따른 수지봉합형 반도체 장치의 단면도.
제2도는 제1도 중 히트싱크의 일례를 나타내는 평면도.
제3도는 제1도중 리이드프레임의 일례를 나타내는 평면도.
Claims (4)
- 베드부(21)와 상기 베드부(21)의 표면위에 설치된 반도체 칩(4), 상기 반도체칩(4)의 내부 단자에 접합선(5)을 통해 접속된 리이드프레임(2), 상기 베드부(21)의 배면하측에 소정거리의 간극을 두고 설치된 금속제 히트싱크(1), 상기 반도체칩(4)과 베드부(21), 접합선(5), 리이드프레임(2) 선단부 및 히트싱크(1)를 봉합하는 수지모울드층(6)이 설치된 수지봉합형 반도체장치에 있어서,상기 베드부(21)는 기 배면에 오목부(7)가 형성되고, 상기 수지모울드층(6)이 상기 베드부(21)의 배면이 노출되도록 봉합하는 제1수지모울드층(61)과 상기 히트싱크(1)의 측면과 상기 제1수지모울드층(61)의 측면 및 상기 리이드프레임(2)의 중간부를 피복함과 더불어 상기 베드부(21)의 배면과 히트싱크(1)의 상면간의 간극에 채워져 형성된 제2수지모울드층(62)으로 형성된 것을 특징으로 하는 수지봉합형 반도체장치.
- 제1항에 있어서, 상기 히트싱크는 그 상면에 오목부(8)가 형성되어진 것을 특징으로 하는 수지봉합형 반도체장치.
- 제1항 또는 제2항에 있어서, 상기 오목부(7)(8)는 복수까가 산재하여 형성되어진 것을 특징으로 하는 수지봉합형 반도체장치.
- 제3항에 있어서, 상기 오목부(7)(8)는 압인가공이나 호인가공에의해 형성되어진 것을 특징으로 하는 수지봉합형 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP71134 | 1986-03-31 | ||
JP61071134A JPH0680748B2 (ja) | 1986-03-31 | 1986-03-31 | 樹脂封止型半導体装置 |
JP61-71134 | 1986-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870009453A true KR870009453A (ko) | 1987-10-26 |
KR900001984B1 KR900001984B1 (ko) | 1990-03-30 |
Family
ID=13451801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860006424A KR900001984B1 (ko) | 1986-03-31 | 1986-08-04 | 수지봉합형 반도체장치 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH0680748B2 (ko) |
KR (1) | KR900001984B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2788011B2 (ja) * | 1989-08-03 | 1998-08-20 | 三菱電機株式会社 | 半導体集積回路装置 |
US5172213A (en) * | 1991-05-23 | 1992-12-15 | At&T Bell Laboratories | Molded circuit package having heat dissipating post |
DE69637809D1 (de) * | 1996-11-28 | 2009-02-26 | Mitsubishi Electric Corp | Halbleiteranordnung |
JP3910144B2 (ja) * | 2003-01-06 | 2007-04-25 | シャープ株式会社 | 半導体発光装置およびその製造方法 |
JP5593864B2 (ja) * | 2010-06-10 | 2014-09-24 | トヨタ自動車株式会社 | 半導体装置冷却器 |
JP2012195497A (ja) * | 2011-03-17 | 2012-10-11 | Sumitomo Electric Ind Ltd | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211761A (en) * | 1981-06-23 | 1982-12-25 | Nec Corp | Semiconductor device |
JPS58151035A (ja) * | 1982-03-04 | 1983-09-08 | Toshiba Corp | 半導体装置の製造方法 |
JPS58153355A (ja) * | 1982-03-08 | 1983-09-12 | Toshiba Corp | 樹脂封止型半導体装置 |
JPS6139555A (ja) * | 1984-07-31 | 1986-02-25 | Toshiba Corp | 放熱板付樹脂封止形半導体装置 |
-
1986
- 1986-03-31 JP JP61071134A patent/JPH0680748B2/ja not_active Expired - Fee Related
- 1986-08-04 KR KR1019860006424A patent/KR900001984B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR900001984B1 (ko) | 1990-03-30 |
JPH0680748B2 (ja) | 1994-10-12 |
JPS62229961A (ja) | 1987-10-08 |
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FPAY | Annual fee payment |
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