KR880011939A - 반도체 레이저의 조립방법 - Google Patents

반도체 레이저의 조립방법 Download PDF

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Publication number
KR880011939A
KR880011939A KR1019880000010A KR880000010A KR880011939A KR 880011939 A KR880011939 A KR 880011939A KR 1019880000010 A KR1019880000010 A KR 1019880000010A KR 880000010 A KR880000010 A KR 880000010A KR 880011939 A KR880011939 A KR 880011939A
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South Korea
Prior art keywords
semiconductor laser
lead
transparent package
assembly method
assembling
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KR1019880000010A
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English (en)
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KR910007042B1 (ko
Inventor
이사무 야마모또
지로오 후꾸시마
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR880011939A publication Critical patent/KR880011939A/ko
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Publication of KR910007042B1 publication Critical patent/KR910007042B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/22—Apparatus or processes for the manufacture of optical heads, e.g. assembly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49131—Assembling to base an electrical component, e.g., capacitor, etc. by utilizing optical sighting device

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

내용없음

Description

반도체 레이저의 조립방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 (a) (b) 및 (c)는 본명에 과한 반도체 레이저의 조립방법에 의한 조립도중의 반도체 레이저를 표시한 평면도 측면도.

Claims (3)

  1. 중앙부에 다이패드가 있는 리이드 및 이 리이드의 양측에 라이바에 의하여 연결된 2개의 리이드가 있는 리이드플레임을 형성하고 이어서 이 리이드플레임의 중앙 리이상에 접합된 반도체레이저칩 및 수광칩을 와이어에 의하여 각 리이드에 접속하고 그런후에 이들 리이드의 일부, 상기 와이어 및 상기 양칩을 투명 패키지에 수지로 봉해 막고 상기 리이드플레임의 타이바를 절단하는 것을 특징으로하는 반도체레이저의 조립방법.
  2. 제1항에 있어서 투명패키지의 선단면을 요입면으로 형성하는 반도체레이저의 조립방법.
  3. 제1항 또는 제2항에 있어서 투명패키지를 트랜스포 성형방법에 의하여 성형하는 반도체레이저의 조립방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880000010A 1987-03-31 1988-01-05 반도체 레이저의 조립방법 KR910007042B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62079935A JPH0691296B2 (ja) 1987-03-31 1987-03-31 半導体レ−ザの組立方法
JP87-79935 1987-03-31
JP62-79935 1987-03-31

Publications (2)

Publication Number Publication Date
KR880011939A true KR880011939A (ko) 1988-10-31
KR910007042B1 KR910007042B1 (ko) 1991-09-16

Family

ID=13704174

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880000010A KR910007042B1 (ko) 1987-03-31 1988-01-05 반도체 레이저의 조립방법

Country Status (4)

Country Link
US (1) US4877756A (ko)
JP (1) JPH0691296B2 (ko)
KR (1) KR910007042B1 (ko)
DE (1) DE3810899A1 (ko)

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EP0366472B1 (en) * 1988-10-28 1994-01-19 Matsushita Electric Industrial Co., Ltd. Semiconductor laser apparatus
JPH03109362U (ko) * 1990-02-26 1991-11-11
JPH03274781A (ja) * 1990-03-23 1991-12-05 Rohm Co Ltd レーザダイオード
US5966230A (en) * 1990-05-29 1999-10-12 Symbol Technologies, Inc. Integrated scanner on a common substrate
US5156999A (en) * 1990-06-08 1992-10-20 Wai-Hon Lee Packaging method for semiconductor laser/detector devices
US5485479A (en) * 1990-11-07 1996-01-16 Fuji Electric Co., Ltd. Semiconductor laser device encapsulated in a transparent resin layer
US5319182A (en) * 1992-03-04 1994-06-07 Welch Allyn, Inc. Integrated solid state light emitting and detecting array and apparatus employing said array
TW289872B (ko) * 1992-12-24 1996-11-01 Sharp Kk
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US5808325A (en) * 1996-06-28 1998-09-15 Motorola, Inc. Optical transmitter package assembly including lead frame having exposed flange with key
EP0851414A3 (en) * 1996-12-26 2000-09-27 Sanyo Electric Co. Ltd Optical pickup device and optical recording medium driving apparatus comprising the same
JP2001034983A (ja) * 1999-07-14 2001-02-09 Sankyo Seiki Mfg Co Ltd 光ピックアップ装置用受発光素子
US6577656B2 (en) 2001-03-13 2003-06-10 Finisar Corporation System and method of packaging a laser/detector
JP2003031885A (ja) * 2001-07-19 2003-01-31 Toshiba Corp 半導体レーザ装置
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US9166131B2 (en) * 2013-07-17 2015-10-20 Tai-Yin Huang Composite LED package and its application to light tubes
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Also Published As

Publication number Publication date
JPS63244895A (ja) 1988-10-12
KR910007042B1 (ko) 1991-09-16
US4877756A (en) 1989-10-31
DE3810899C2 (ko) 1993-06-24
JPH0691296B2 (ja) 1994-11-14
DE3810899A1 (de) 1988-10-27

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