KR950009988A - 수지봉지형 반도체장치 - Google Patents

수지봉지형 반도체장치 Download PDF

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Publication number
KR950009988A
KR950009988A KR1019940020858A KR19940020858A KR950009988A KR 950009988 A KR950009988 A KR 950009988A KR 1019940020858 A KR1019940020858 A KR 1019940020858A KR 19940020858 A KR19940020858 A KR 19940020858A KR 950009988 A KR950009988 A KR 950009988A
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South Korea
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resin
semiconductor device
lead frame
thickness
terminal portion
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KR1019940020858A
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KR100298162B1 (ko
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아끼라 고지마
하루히꼬 마끼노
게지 오사와
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오가 노리오
소니 가부시기가이샤
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Publication of KR100298162B1 publication Critical patent/KR100298162B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

수지봉지형(樹脂封止型) 반도체장치의 초박형화(超搏型化)를 도모한다.
리드프레임(12)의 판두께 D1내에 반도체칩(13)을 배설하여 수지(14)로 봉지하고, 반도체장치(11) 전체의 두께를 리드프레임(12)의 판두께 D1로 규정하고, 단자부(15)의 상면(15a), 하면(15b) 및 측면(15c)을 수지봉지면으로부터 노출하여 구성된다.

Description

수지봉지형 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 수지봉지형 반도체장치의 일예를 나타낸 단면도,
제2도는 제1도의 수지봉지형 반도체장치의 사시도,
제3도 a,b,c는 본 발명에 의한 수지봉지형 반도체장치의 제법예를 나타낸 제조공정도,
제4도 d,e,f,g는 본 발명에 의한 수지봉지형 반도체장치의 제법예를 나타낸 제조공정도,
제5도 h,i,j는 본 발명에 의한 수지봉지형 반도체장치의 제법예를 나타낸 제조공정도.

Claims (4)

  1. 리드프레임의 판두께내에 반도체칩이 배설되고, 수지봉지(樹脂封止)되어 이루어지는 것을 특징으로 하는 수지봉지형 반도체장치.
  2. 제1항에 있어서, 상기 리드프레임의 판두께로 반도체장치의 두께가 규정되는 것을 특징으로 하는 수지봉지형 반도체장치.
  3. 제1항 또는 제2항에 있어서, 상기 리드프레임에 의한 단자부의 상면, 하면 및 측면이 상기 수지봉지의 면으로부터 노출되어 있는 것을 특징으로 하는 수지봉지형 반도체장치.
  4. 제1항 또는 제2항에 있어서, 상기 단자부로부터 일체로 도출된 이 단자부보다 얇은 접속리드부와 상기 반도체칩이 접속되는 것을 특징으로 하는 수지봉지형 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940020858A 1993-09-06 1994-08-24 수지봉지형반도체장치 KR100298162B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22141493A JP3230348B2 (ja) 1993-09-06 1993-09-06 樹脂封止型半導体装置及びその製造方法
JP93-221,414 1993-09-06

Publications (2)

Publication Number Publication Date
KR950009988A true KR950009988A (ko) 1995-04-26
KR100298162B1 KR100298162B1 (ko) 2001-10-24

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KR1019940020858A KR100298162B1 (ko) 1993-09-06 1994-08-24 수지봉지형반도체장치

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US (1) US5723900A (ko)
JP (1) JP3230348B2 (ko)
KR (1) KR100298162B1 (ko)
MY (1) MY113280A (ko)
TW (1) TW363768U (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000072840A (ko) * 1999-01-23 2000-12-05 차준민 셋팅 퍼머 방법 및 장치
KR20140101686A (ko) * 2013-02-12 2014-08-20 세이코 인스트루 가부시키가이샤 수지 봉지형 반도체 장치 및 그 제조 방법

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JP2708191B2 (ja) 1988-09-20 1998-02-04 株式会社日立製作所 半導体装置
KR0158868B1 (ko) * 1988-09-20 1998-12-01 미다 가쓰시게 반도체장치
JPH08279591A (ja) * 1995-04-07 1996-10-22 Nec Corp 半導体装置とその製造方法
KR0179921B1 (ko) * 1996-05-17 1999-03-20 문정환 적측형 반도체 패키지
JP2933554B2 (ja) * 1996-11-28 1999-08-16 九州日本電気株式会社 半導体装置およびその製造方法
KR100240748B1 (ko) * 1996-12-30 2000-01-15 윤종용 기판을 갖는 반도체 칩 패키지와 그 제조 방법 및 그를 이용한적층 패키지
CN1134839C (zh) * 1997-12-26 2004-01-14 三星航空产业株式会社 引线框架及涂敷引线框架的方法
US6020629A (en) 1998-06-05 2000-02-01 Micron Technology, Inc. Stacked semiconductor package and method of fabrication
US6451624B1 (en) 1998-06-05 2002-09-17 Micron Technology, Inc. Stackable semiconductor package having conductive layer and insulating layers and method of fabrication
JP3576030B2 (ja) * 1999-03-26 2004-10-13 沖電気工業株式会社 半導体装置及びその製造方法
US6636334B2 (en) * 1999-03-26 2003-10-21 Oki Electric Industry Co., Ltd. Semiconductor device having high-density packaging thereof
US6982478B2 (en) * 1999-03-26 2006-01-03 Oki Electric Industry Co., Ltd. Semiconductor device and method of fabricating the same
USRE40112E1 (en) 1999-05-20 2008-02-26 Amkor Technology, Inc. Semiconductor package and method for fabricating the same
JP3398721B2 (ja) * 1999-05-20 2003-04-21 アムコー テクノロジー コリア インコーポレーティド 半導体パッケージ及びその製造方法
US6720642B1 (en) * 1999-12-16 2004-04-13 Fairchild Semiconductor Corporation Flip chip in leaded molded package and method of manufacture thereof
US7273769B1 (en) * 2000-08-16 2007-09-25 Micron Technology, Inc. Method and apparatus for removing encapsulating material from a packaged microelectronic device
JP2002093831A (ja) * 2000-09-14 2002-03-29 Shinko Electric Ind Co Ltd 半導体装置およびその製造方法
US6627980B2 (en) * 2001-04-12 2003-09-30 Formfactor, Inc. Stacked semiconductor device assembly with microelectronic spring contacts
JP2003060117A (ja) * 2001-08-10 2003-02-28 Texas Instr Japan Ltd 半導体装置の製造方法
US6611052B2 (en) 2001-11-16 2003-08-26 Micron Technology, Inc. Wafer level stackable semiconductor package
US7009296B1 (en) 2004-01-15 2006-03-07 Amkor Technology, Inc. Semiconductor package with substrate coupled to a peripheral side surface of a semiconductor die
US6972372B1 (en) * 2004-05-28 2005-12-06 Macronix International Co., Ltd. Method and apparatus for stacking electrical components using outer lead portions and exposed inner lead portions to provide interconnection
WO2006088270A1 (en) * 2005-02-15 2006-08-24 Unisemicon Co., Ltd. Stacked package and method of fabricating the same
WO2007008507A2 (en) * 2005-07-06 2007-01-18 Mirkin Chad A Phase separation in patterned structures
US9466545B1 (en) 2007-02-21 2016-10-11 Amkor Technology, Inc. Semiconductor package in package
US7893545B2 (en) * 2007-07-18 2011-02-22 Infineon Technologies Ag Semiconductor device
US8227908B2 (en) 2008-07-07 2012-07-24 Infineon Technologies Ag Electronic device having contact elements with a specified cross section and manufacturing thereof
JP2010034350A (ja) * 2008-07-30 2010-02-12 Sanyo Electric Co Ltd 半導体装置
KR101706825B1 (ko) * 2014-11-13 2017-02-27 앰코 테크놀로지 코리아 주식회사 반도체 패키지
JP6338547B2 (ja) * 2015-03-31 2018-06-06 オリンパス株式会社 成形回路部品、成形回路部品の製造方法および回路モジュール
JP6851239B2 (ja) * 2017-03-29 2021-03-31 エイブリック株式会社 樹脂封止型半導体装置およびその製造方法
JP2019153658A (ja) * 2018-03-02 2019-09-12 富士通株式会社 基板モジュール及び基板モジュールの製造方法
JP7239342B2 (ja) * 2019-02-12 2023-03-14 新光電気工業株式会社 電子装置及び電子装置の製造方法

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JP2856455B2 (ja) * 1989-10-05 1999-02-10 株式会社東芝 半導体装置
JPH0496357A (ja) * 1990-08-13 1992-03-27 Matsushita Electron Corp 半導体装置およびその実装方法
JP2934357B2 (ja) * 1992-10-20 1999-08-16 富士通株式会社 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000072840A (ko) * 1999-01-23 2000-12-05 차준민 셋팅 퍼머 방법 및 장치
KR20140101686A (ko) * 2013-02-12 2014-08-20 세이코 인스트루 가부시키가이샤 수지 봉지형 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
JP3230348B2 (ja) 2001-11-19
US5723900A (en) 1998-03-03
KR100298162B1 (ko) 2001-10-24
TW363768U (en) 1999-07-01
MY113280A (en) 2002-01-31
JPH0778911A (ja) 1995-03-20

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