JP6338547B2 - 成形回路部品、成形回路部品の製造方法および回路モジュール - Google Patents
成形回路部品、成形回路部品の製造方法および回路モジュール Download PDFInfo
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- JP6338547B2 JP6338547B2 JP2015072734A JP2015072734A JP6338547B2 JP 6338547 B2 JP6338547 B2 JP 6338547B2 JP 2015072734 A JP2015072734 A JP 2015072734A JP 2015072734 A JP2015072734 A JP 2015072734A JP 6338547 B2 JP6338547 B2 JP 6338547B2
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- 238000000034 method Methods 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000002184 metal Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 21
- 238000012986 modification Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000001746 injection moulding Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Structure Of Printed Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
図1Aは、本発明の実施の形態1にかかる成形回路部品を用いた回路モジュールの上面図である。図1Bは、図1Aの回路モジュールの側面図である。図1Cは、図1BのA−A線断面図である。実施の形態1にかかる成形回路部品10は、三次元回路が形成された本体部1と、外部基材の外部電極と半田により接続され、本体部1から延出するリード部2と、を備える。本体部1は、射出成形可能な樹脂材料からなる。また、回路モジュール20は、成形回路部品10と、外部基材3とを備え、外部基材3は、成形回路部品10のリード部2が半田5により接続される外部電極4を有する。図1A〜1Cにおいては、簡略化のために三次元回路の図示を省略している。
実施の形態2にかかる成形回路部品は、接続部の断面形状が台形状をなしている。図3Aは、本発明の実施の形態2にかかる成形回路部品を用いた回路モジュールの上面図である。図3Bは、図3Aの回路モジュールの側面図である。図3Cは、図3BのB−B線断面図である。なお、図3A〜3Cにおいては、実施の形態1と同様に三次元回路の図示を省略している。
2、2A リード部
3 外部基材
4 外部電極
5 半田
10、10A 成形回路部品
20、20A 回路モジュール
21、21A 脚部
22、22A、22B、22C、22E 接続部
23、23a、23b、23c、23e リード部本体
24、24a、24b、24c、24e 金属皮膜
30 レーザ照射装置
Claims (5)
- レーザ光を用いて三次元回路を形成する成形回路部品において、
三次元回路が形成された本体部と、
外部基材の外部電極と半田により接続され、前記本体部から延出するリード部と、
を備え、前記リード部は、前記本体部と同一の材料から成形されたリード部本体と、前記リード部本体の外周の少なくとも一部に形成された金属皮膜とを有することを特徴とする成形回路部品。 - 前記リード部は、
前記本体部からその外側に延出する脚部と、
前記外部基材の外部電極に接続される接続部と、
を有し、前記接続部は、前記接続部の延出方向と垂直な断面において、前記外部電極と平行な底面を少なくとも有するとともに、対向する2方向から外周部全体にレーザ光を照射可能な形状であり、
前記脚部は、対向する2方向から外周部全体にレーザ光が照射可能な形状であることを特徴とする請求項1に記載の成形回路部品。 - 前記リード部は、
前記本体部からその外側に延出する脚部と、
前記外部基材の外部電極に接続される接続部と、
を有し、前記接続部は、前記接続部の延出方向と垂直な断面において、前記外部電極と平行な底面を少なくとも有するとともに、前記接続部に前記底面方向からレーザ光を照射した際、底面および該底面に隣接する側面もレーザ光が照射される形状であることを特徴とする請求項1に記載の成形回路部品。 - 請求項1〜3のいずれか一つに記載の成形回路部品の製造方法であって、
本体部およびリード部本体を成形する成形工程と、
前記本体部および前記リード部本体にレーザ光を照射するレーザ照射工程と、
レーザ光が照射された前記本体部および前記リード部本体に対して、無電解メッキにより回路部および金属皮膜をそれぞれ形成するメッキ工程と、
を含むことを特徴とする成形回路部品の製造方法。 - 請求項1〜3のいずれか一つに記載の成形回路部品と、
前記成形回路部品のリード部が半田接続される外部電極を有する外部基材と、
を備えることを特徴とする回路モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015072734A JP6338547B2 (ja) | 2015-03-31 | 2015-03-31 | 成形回路部品、成形回路部品の製造方法および回路モジュール |
CN201680012094.1A CN107251219B (zh) | 2015-03-31 | 2016-02-25 | 成型电路部件、成型电路部件的制造方法以及电路模块 |
EP16772001.0A EP3279937A4 (en) | 2015-03-31 | 2016-02-25 | Molded circuit component, method for manufacturing molded circuit component, and circuit module |
PCT/JP2016/055698 WO2016158117A1 (ja) | 2015-03-31 | 2016-02-25 | 成形回路部品、成形回路部品の製造方法および回路モジュール |
US15/688,631 US10304762B2 (en) | 2015-03-31 | 2017-08-28 | Molded interconnect device, manufacturing method for molded interconnect device, and circuit module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015072734A JP6338547B2 (ja) | 2015-03-31 | 2015-03-31 | 成形回路部品、成形回路部品の製造方法および回路モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016192521A JP2016192521A (ja) | 2016-11-10 |
JP6338547B2 true JP6338547B2 (ja) | 2018-06-06 |
Family
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JP2015072734A Active JP6338547B2 (ja) | 2015-03-31 | 2015-03-31 | 成形回路部品、成形回路部品の製造方法および回路モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US10304762B2 (ja) |
EP (1) | EP3279937A4 (ja) |
JP (1) | JP6338547B2 (ja) |
CN (1) | CN107251219B (ja) |
WO (1) | WO2016158117A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11545418B2 (en) * | 2018-10-24 | 2023-01-03 | Texas Instruments Incorporated | Thermal capacity control for relative temperature-based thermal shutdown |
JPWO2020250660A1 (ja) * | 2019-06-14 | 2020-12-17 |
Family Cites Families (23)
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JP2965803B2 (ja) | 1992-11-19 | 1999-10-18 | ポリプラスチックス株式会社 | 成形品の表面に導電性回路を形成する方法及び導電回路形成部品 |
JP3230348B2 (ja) * | 1993-09-06 | 2001-11-19 | ソニー株式会社 | 樹脂封止型半導体装置及びその製造方法 |
JP2644194B2 (ja) * | 1994-08-31 | 1997-08-25 | 秋田日本電気株式会社 | 半導体装置及びその製造方法 |
JPH10294395A (ja) * | 1997-04-18 | 1998-11-04 | Hitachi Cable Ltd | 半導体素子搭載用基板および半導体装置 |
US5879965A (en) | 1997-06-19 | 1999-03-09 | Micron Technology, Inc. | Plastic lead frames for semiconductor devices, packages including same, and methods of fabrication |
JP3616488B2 (ja) | 1997-11-10 | 2005-02-02 | 三共化成株式会社 | 成形回路部品の製造方法 |
US6924548B2 (en) | 2001-01-31 | 2005-08-02 | Hitachi, Ltd. | Semiconductor device and its manufacturing method with leads that have an inverted trapezoid-like section |
JP2002314217A (ja) | 2001-04-12 | 2002-10-25 | Hitachi Cable Ltd | プラスチック成形回路部品の製造方法 |
US7315077B2 (en) * | 2003-11-13 | 2008-01-01 | Fairchild Korea Semiconductor, Ltd. | Molded leadless package having a partially exposed lead frame pad |
US7134197B2 (en) * | 2003-12-18 | 2006-11-14 | Honeywell International Inc. | Plastic lead frames utilizing reel-to-reel processing |
US7112873B2 (en) * | 2004-09-03 | 2006-09-26 | Honeywell International Inc. | Flip chip metal bonding to plastic leadframe |
US8492464B2 (en) * | 2008-05-23 | 2013-07-23 | Sabic Innovative Plastics Ip B.V. | Flame retardant laser direct structuring materials |
TW201036504A (en) * | 2009-03-18 | 2010-10-01 | Everlight Electronics Co Ltd | Photoelectric transmitting or receiving device and manufacturing method thereof |
US20100307799A1 (en) * | 2009-06-06 | 2010-12-09 | Chiang Cheng-Feng | Carrier Structure for Electronic Components and Fabrication Method of the same |
JP5455028B2 (ja) * | 2009-10-30 | 2014-03-26 | パナソニック株式会社 | 回路基板構造体 |
EP2354185A1 (en) * | 2010-02-08 | 2011-08-10 | Mitsubishi Chemical Europe GmbH | Polymer composition |
CN102237568B (zh) | 2010-04-30 | 2015-09-23 | 上海莫仕连接器有限公司 | 天线装置及其制作方法 |
JP5437943B2 (ja) * | 2010-07-26 | 2014-03-12 | 日立オートモティブシステムズ株式会社 | パワー半導体ユニット、パワーモジュールおよびそれらの製造方法 |
DE102011000138A1 (de) | 2011-01-14 | 2012-07-19 | Lpkf Laser & Electronics Ag | Verfahren zur selektiven Metallisierung eines Substrats sowie ein nach diesem Verfahren hergestellter Schaltungsträger |
TW201303055A (zh) * | 2011-07-07 | 2013-01-16 | Hon Hai Prec Ind Co Ltd | 坩堝、真空蒸鍍系統及方法 |
US8708745B2 (en) * | 2011-11-07 | 2014-04-29 | Apple Inc. | Dual orientation electronic connector |
JP6270335B2 (ja) | 2013-04-26 | 2018-01-31 | オリンパス株式会社 | 撮像装置 |
DE102014206558A1 (de) * | 2014-04-04 | 2015-10-08 | Robert Bosch Gmbh | Verfahren zum Herstellen eines MID-Schaltungsträgers und MID-Schaltungsträger |
-
2015
- 2015-03-31 JP JP2015072734A patent/JP6338547B2/ja active Active
-
2016
- 2016-02-25 CN CN201680012094.1A patent/CN107251219B/zh active Active
- 2016-02-25 EP EP16772001.0A patent/EP3279937A4/en not_active Withdrawn
- 2016-02-25 WO PCT/JP2016/055698 patent/WO2016158117A1/ja active Application Filing
-
2017
- 2017-08-28 US US15/688,631 patent/US10304762B2/en active Active
Also Published As
Publication number | Publication date |
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EP3279937A1 (en) | 2018-02-07 |
WO2016158117A1 (ja) | 2016-10-06 |
CN107251219A (zh) | 2017-10-13 |
US10304762B2 (en) | 2019-05-28 |
CN107251219B (zh) | 2019-09-10 |
JP2016192521A (ja) | 2016-11-10 |
EP3279937A4 (en) | 2018-12-05 |
US20170358526A1 (en) | 2017-12-14 |
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