TWI487443B - 基板結構的製造方法及以此方法製造的基板結構 - Google Patents

基板結構的製造方法及以此方法製造的基板結構 Download PDF

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TWI487443B
TWI487443B TW103121552A TW103121552A TWI487443B TW I487443 B TWI487443 B TW I487443B TW 103121552 A TW103121552 A TW 103121552A TW 103121552 A TW103121552 A TW 103121552A TW I487443 B TWI487443 B TW I487443B
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protective layer
metal layer
layer
substrate
substrate structure
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TW103121552A
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TW201542052A (zh
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Babak Radi
Shih Hong Chen
Yu Fu Kuo
Chun Lin Chen
jing wen Chen
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Wistron Neweb Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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    • B32B15/00—Layered products comprising a layer of metal
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1813—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by radiant energy
    • C23C18/182—Radiation, e.g. UV, laser
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Description

基板結構的製造方法及以此方法製造的基板結構
本發明是有關於一種基板結構的製造方法及一種以此方法製造的基板結構。
一般而言，為了藉由使用最小化手動加工的程序來形成基板，此程序可涉及類似顯影(Photolithography)、電鍍(electroplating)、蝕刻(etching)等技術。顯影已經是用以於基板(substrate)上形成結構圖案的可靠方法，且於沈積(deposit)於基板上的物質的圖案部份的製造過程中使用顯影的程序基本上涉及一種或多種具有特定圖案的光罩(photo mask)，其中此特定圖案係自光罩傳送至光敏(light-sensitive)光阻。在曝光(exposure to light)週期之後，高強度光子(photon)經化學作用分解或軟化光敏光阻的部份，以在基材上形成圖形化區域而成為可接著沈積於光阻下方材料中的一種方式。
然而，此程序會涉及多種昂貴機器與光罩以及極為潔淨 的操作條件，以使得製造的整體花費將會增加。並且，為了固定光阻於基板上，將需要於硬化前噴塗類似環氧樹脂(epoxy)的聚合樹脂(polymeric resin)於接合表面的部份。此程序會涉及額外的化學與額外的步驟。此外，傳統電鍍經由顯影後再電鍍的製程，由於電鍍設備、電極、電鍍液等的使用，以上種種導致成本較高。
藉此，這會是相較於前述傳統實作更有效率且更符合成本效益的方法來發展圖形化結構於基板上。
本發明提供一種基板(substrate)結構的製造方法及以此方法製造的基板結構。
依據本發明一實施例，基板結構的製造方法包括下列步驟。於基底上直接形成第一金屬層。於第一金屬層上直接形成第一保護層。藉由使用包括硫醇基(thiol group)的化合物(compound)來於第一保護層上直接形成第二保護層。圖形化(patterning)第二保護層以形成具有暴露第一保護層的開口的圖案。並且，於該第二保護層的該開口內形成第二金屬層，且直接於第一保護層上形成。
在本發明的一實施例中，本發明提供一種基板結構，此基板結構包括至少一個基底(base)、第一金屬層、第一保護層、第二保護層以及第二金屬層，但不僅限於此。此第一金屬層配置於基底上。第一保護層配置於第一金屬層上。第二保護層包括配 置於第一保護層上的硫醇化合物，且具有包含暴露第一保護層的開口的圖案。第二金屬層配置於開口內，且配置於第一保護層上。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。需理解的是，上述一般說明及下述詳細說明兩者皆為實施例，且其意圖提供主張的揭露的更進一步解釋。
需理解的是，然而，此發明內容可能不包含所有層面及本揭露的實施例，且因此不代表此發明內容限制或約束於任何方法。並且，本揭露會包括本領域技術人員所認為顯而易見的改進以及修改。
101‧‧‧基底
102‧‧‧第一金屬層
103‧‧‧第一保護層
104‧‧‧第二保護層
105‧‧‧圖案部份
106‧‧‧第二金屬層
S201~S205‧‧‧步驟
包括的附圖用以提供本揭露進一步的理解，且併入及構成此說明書的一部分。附圖繪示本揭露的實施例，並隨同說明書，用於解釋本揭露的原理。
圖1A為依據本揭露一實施例所繪示製造基板結構的第一步驟。
圖1B為依據本揭露一實施例所繪示於基底上形成第一金屬層。
圖1C為依據本揭露一實施例所繪示於第一金屬層上形成第一保護層。
圖1D為依據本揭露一實施例所繪示於第一保護層上形成第二保護層。
圖1E為依據本揭露一實施例所繪示圖形化第二保護層。
圖1F為依據本揭露一實施例所繪示形成第二金屬層。
圖2為依據本揭露一實施例所繪示製造基板結構的程序。
將參考詳細描述本揭露的本優選實施例，其範例繪示於附圖中。在可能的情況下，在附圖與說明書中所使用相同的符號代表相同或相似的部件。
本發明提出一種藉由使用化學及雷射處理的組合來於基板(substrate)上形成圖形化金屬層結構製造方法。基板可以是(例如，金屬的)且用來作為基板的金屬可以是例如鎳(Nickel)。於傳統方法下，固定裝置(fixtures)、設備以及光罩(mask)基本上會需要遮蔽且防止不該受到曝光成為形成介質的圖案的區域。然而，本發明提出的方法不需要光罩及相關固定裝置與設備，且形成保護層的圖案可藉由化學化合物(compound)來製作。一個或多個保護層的開口可藉由雷射形成及清除。
前述形成圖案的保護層可藉由被稱作硫醇(thiol)或硫醇衍生物的化學化合物來形成。硫醇化合物可具有多種類似十八烷硫醇(Octadecanethiol)、壬烷硫醇(Nonanethiol)、1-十六烷硫醇(1-Hexadecanethiol)、1-丁烷硫醇(1-Butanethiol)、三級壬基 硫醇(tert-Nonyl mercaptan)、苄基硫醇(Benzyl mercaptan)以及硫酚(Thiophenol)的變體。保護層可伴隨一個或這些變體的組合來形成。前述的包括硫醇或硫醇衍生物的化學溶液於本發明中可視為硫醇化合物。
在本發明一實施例中，形成保護層的化學化合物大多可以是具有一些非活性(non-reactive)元素及雜質的硫醇化合物。於大量生產的過程中，硫醇化合物是可調整的，且不需要硬化(curing)並依據樹脂(resin)所需的硬化後更進一步處理。硫醇化合物為可雷射或對雷射敏感的(laser sensitive)使硫醇化合物可輕易藉由雷射處理來移除或清除的。且硫醇化合物具良好附著於金屬基板上且能夠與電鍍液之間形成擴散阻障層(diffusion barrier layer)。例如，硫醇化合物非常良好地連接於鎳，其不僅視為防止無電解電鍍液與鎳層反應的擴散阻障層，亦會避免鎳層的氧化。藉此，藉由應用一般二維(2D)或三維(3D)雷射於包括硫醇化合物的化學保護層，複合圖案會以保護層開口形成於保護層，以使得可藉由使用無電解電鍍(electroless plating)來沈積金屬至保護層的開口。此技術除了能夠有非常高速率的生產之外，亦能夠使用光點更小的雷射，對於圖形化具高解析度。
藉由使用本發明所提出的方法，可開發出一種基板結構。此基板結構可包括至少一個基底、第一金屬層、第一保護層、第二保護層以及第二金屬層，但不僅限於此。第一金屬層可配置於基底上。第一保護層可配置於第一金屬層上以作為擴散阻障 層。第二保護層可以是硫醇化合物。藉由使用一般的雷射來蝕刻(etching)第二保護層以形成圖案，圖形化的第二保護層可包括一個或多個開口，其中第二金屬層可配置於開口中以附著至第一保護層。第二金屬層可經由無電解電鍍配置於開口中。基板結構可用於機械或電子結構的變種(例如，連接器、天線等)。然而，本發明的基板結構不僅限於如同可用於需要形成金屬圖案於基板上的任何結構或任何應用的基板結構的任何特定應用。
本發明所提出的方法可具有下列優點。第一，本發明提出的方法可藉由雷射蝕刻將金屬層形成任何複合結構或幾何形狀。第二，本發明提出的程序，所有需要的設備、固定裝置以及無電解電鍍液(electroless bath)可輕易地以低花費的方法取得，此程序亦可自動化於大量生產。第三，本發明提出的方法相較於顯影(Photolithography)、電鍍(electroplating)的傳統方法更快速。第四，圖形化金屬層僅用於第二保護層的圖形化開口中，相較舊有技術可節省下相當可觀的金屬材料。第五，當第二保護層浸入包括硫醇化合物的溶液以配置於第一保護層上時，不再需要送至第一保護層上類似環氧樹脂(epoxy)的聚合樹脂(polymeric resin)的噴塗。第六，當硫醇化合物在基板上形成外膜時，由於硫醇單一層形成的外模模厚並不會增加模具(mold)尺寸；相較於既有涉及樹脂的應用的技術時，光阻外模的厚度大。因此當基板與其他部份組合時，外模厚度將影響圖形化金屬層尺寸。
為了進步一步闡明本發明，本發明藉由圖1A~圖1F及 這些圖示所對應的說明而提出一實施例。請參照圖1A，基板或基底(base)101可作為基底(foundation)且作為基板結構的一部份。基底101可為硬性或可調整的。基底101可由聚合物(polymer)製成。然而，只要基底101可為了基板結構及為了附著於其上的後續層提供足夠的穩定，本發明不僅限於聚合物且任何金屬的或非金屬的材料皆可用於基底101。並依據圖1A，藉由雷射蝕刻於基底101形成凹槽部份以移除部份的基底101，且第一金屬層接續配置於凹槽部份。然而，凹槽部份的形成是選擇性的，且下一層可配置於基底101的表面上而不是凹槽部份。
然後，如圖1B所示，第一金屬層102可形成於基底101的表面上。例如，假設基底101已藉由雷射蝕刻而形成凹槽，第一金屬層102(例如，銅)可藉由電鍍來配置於基底101的表面上。例如，假設本發明提出的基板結構係用以作為天線，則第一金屬層可以是用於天線的銅。然而，銅的使用僅為示例且不應被理解來限制本發明。第一金屬層亦可為金、銀或鎳。
圖1C為依據本發明一實施例所繪示配置於第一金屬層102上的第一保護層103的形成。因為第二金屬層最終會是圖形化層，則需要第一保護層103來防止第一金屬層102及第二金屬層之間的擴散。並且第一保護層103可防止第一金屬層102的表面的氧化。藉此，第一保護層103可藉由使用例如無電解電鍍來配置於第一金屬層102上。然而，只要第一保護層103可附著於第一金屬層102，亦可使用如同電鍍或濺鍍(Sputtering)的傳統技 術。第一保護層103作為兩金屬層之間良好的擴散阻障層。然而，第一保護層103的材料亦可視為擴散阻障且防止金屬層氧化的材料，第一保護層103可以是銀或任何其他具有上述特性的材料。
接續於第一保護層103的形成，如圖1D所示，第二保護層104可配置於第一保護層103上。第二保護層104可藉由塗佈包括如同前述的硫醇或硫醇衍生物的液體溶液而配置於第一保護層103。例如，液體溶液可以藉由浸塗(dip coating)第一保護層103於溶液以形成第二保護層104來塗佈於第一保護層103。若第一金屬層103為鎳層，則包括硫醇化合物的液體溶液可良好附著於鎳。第二保護層104可簡單地藉由讓最近所浸塗的第二保護層104放置於室溫下來固定於第一保護層103上，或者第二保護層104可放置於烘箱(oven)內以加速形成程序。如同本發明提出的第二保護層104的應用不需要塗佈如同環氧樹脂的聚合樹脂噴塗的額外步驟。第二保護層104可視為光罩、阻障或遮蔽，以防止圖形化第二保護層104後第二金屬層配置於第一保護層的非預期的位置上。
圖1E為依據本發明一實施例所繪示第二保護層104固定於第一保護層103上後圖形化第二保護層104。因為硫醇化合物對雷射敏感，則可應用一般的雷射來移除第二保護層104的圖案部份105。圖案部份105可包括透過可配置於附著於第一保護層103的第二金屬層的一個或多個開口。此程序步驟可使用顯影來置換傳統技術，但無須任何光罩及固定裝置，以如同可藉由應用雷射 光束於圖案部份105以雷射蝕刻第二保護層104來形成圖案部份105般的圖形化第二保護層104。
在已藉由雷射的應用來蝕刻出第二保護層104的圖案部份105之後，圖1F為依據本發明一實施例所繪示第二金屬層106的形成。第二金屬層106可藉由配置第二金屬層106於藉由圖案部份105成形的一個或多個開口來形成。例如，第二金屬層可藉由無電解電鍍配置於第一保護層103上的一個或多個開口。(即，藉由暴露第二保護層104的一個或多個開口於無電解電鍍液而不是電極(electrode)的應用。)第二金屬層106可以是例如金。然而，用於第二金屬層106的材料液可以是銅、銀或任何其他高傳導性的金屬。
藉由本發明提出的方法所製造的基板結構可包括基底101、第一金屬層102、第一保護層103、第二保護層104以及第二金屬層106，其中第一金屬層102配置於基底101上，第一保護層103配置於第一金屬層102上，第二保護層104係包括配置於第一保護層103上的硫醇化合物的化學溶液化合物所製成的，且第二金屬層106配置於第一保護層103上。第二保護層104可包括圖案部份105，此圖案部份105包括暴露於第一保護層103的一個或多個開口。第二金屬層106可配置於一個或多個開口內且配置於第一保護層104上。
圖2為依據本發明一實施例總結製造基板結構的程序的流程圖。在步驟S201中，形成第一金屬層於基底上。在步驟S202 中，形成第一保護層於第一金屬層上。在步驟S203中，藉由使用包括硫醇基的化合物來形成第二保護層於第一保護層上。在步驟S204中，圖形化第二保護層以形成具有暴露第一保護層的開口的圖案。在步驟S205中，形成第二金屬層於第二保護層的該開口內，且直接形成於第一保護層上。
用於本申請案的所揭露實施例的詳細描述中的元件、動作或指令不應解釋為對本揭露而言為絕對關鍵或必要的，除非明確地如此描述。而且，如本文中所使用，用詞“一”可包含一個以上項目。如果希望僅一個項目，那麼將使用術語“單一”或類似語言。此外，如本文中所使用，在多個項目和/或多個項目種類的列表之前的術語“中的任一者”希望包含所述項目和/或項目種類個別地或結合其他項目和/或其他項目種類“中的任一者”、“中的任何組合”、“中的任何多個”和/或“中的多個的任何組合”。另外，如本文中所使用，術語“集合”希望包含任何數量個項目，包含零個。另外，如本文中所使用，術語“數量”希望包含任何數量，包含零。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
S201~S205‧‧‧步驟

Claims (20)

  1. 一種基板結構的製造方法，包括：直接形成一第一金屬層於一基底上；直接形成一第一保護層於該第一金屬層上；藉由使用包括一硫醇基的一化合物來直接形成一第二保護層於該第一保護層上；圖形化該第二保護層以形成具有暴露該第一保護層的一開口的一圖案；以及形成一第二金屬層於該第二保護層的該開口內，且直接形成於該第一保護層上。
  2. 如申請專利範圍第1項所述的方法，其中該化合物係挑選自十八烷硫醇(Octadecanethiol)基、壬烷硫醇(Nonanethiol)基、1-十六烷硫醇(1-Hexadecanethiol)基、1-丁烷硫醇(1-Butanethiol)基、三級壬基硫醇(tert-Nonyl mercaptan)基、苄基硫醇(Benzyl mercaptan)基以及硫酚(Thiophenol)基。
  3. 如申請專利範圍第1項所述的方法，其中直接形成該第一金屬層於該基底的步驟包括：使用雷射以形成一凹槽於該基底；以及配置該第一金屬層於該凹槽內。
  4. 如申請專利範圍第1項所述的方法，其中形成該第二保護層的步驟包括：塗佈該化合物的一溶液於該第一保護層。
  5. 如申請專利範圍第1項所述的方法，其中圖形化該第二保護層的步驟包括使用雷射來蝕刻該第二保護層以形成該圖案。
  6. 如申請專利範圍第1項所述的方法，其中該第一金屬層為銅或鋁。
  7. 如申請專利範圍第1項所述的方法，其中該第一保護層為一擴散阻障層，其中該擴散阻障層防止該第一金屬層以及該第二金屬層之間的擴散且防止該第一金屬層的氧化。
  8. 如申請專利範圍第7項所述的方法，其中該第一保護層為鎳或銀。
  9. 如申請專利範圍第1項所述的方法，其中形成該第一金屬層的步驟包括藉由使用無電解電鍍來直接形成該第一金屬層於該基底上。
  10. 如申請專利範圍第1項所述的方法，其中形成該第二金屬層的步驟包括藉由使用無電解電鍍來直接形成該第二金屬層於該第一保護層上。
  11. 如申請專利範圍第1項所述的方法，其中圖形化該第二保護層的步驟不包括光罩。
  12. 如申請專利範圍第1項所述的方法，其中形成該第二保護層的步驟不包括聚合樹脂的噴塗。
  13. 一種基板結構，包括：一基底；一第一金屬層，配置於該基底上； 一第一保護層，配置於該第一金屬層上；一第二保護層，包括配置於該第一保護層上的一硫醇化合物，且具有包含暴露該第一保護層的一開口的一圖案；以及一第二金屬層，配置於該開口內，且配置於該第一保護層上。
  14. 如申請專利範圍第13項所述的基板結構，其中該硫醇化合物為十八烷硫醇。
  15. 如申請專利範圍第13項所述的基板結構，其中該硫醇化合物係挑選自壬烷硫醇基、1-十六烷硫醇基、1-丁烷硫醇基、三級壬基硫醇基、苄基硫醇基以及硫酚基。
  16. 如申請專利範圍第13項所述的基板結構，其中該第一金屬層為銅或鋁。
  17. 如申請專利範圍第13項所述的基板結構，其中該第一保護層為一擴散阻障層，其中該擴散阻障層防止該第一金屬層以及該第二金屬層之間的擴散且防止氧化。
  18. 如申請專利範圍第17項所述的基板結構，其中該第一保護層為鎳、銀或鉻。
  19. 如申請專利範圍第13項所述的基板結構，其中該基底為聚合物。
  20. 如申請專利範圍第13項所述的基板結構，其中該第二金屬層為金。
TW103121552A 2014-04-30 2014-06-23 基板結構的製造方法及以此方法製造的基板結構 TWI487443B (zh)

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